  WZ  Version   The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for PCBoard mounting. The OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ are designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. The OPB70AWZ consists of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Photodarlington, mounted side-by- side on converging optical axes in a black plastic housing and is designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. The OPB70CWZ through OPB70FWZ consist of a Visible (Red 640nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor or Rbe Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. Various lens options are available: No lens for the (OPB703, OPB703WZ), blue window for dust protection for the (OPB704, OPB704WZ, OPB70BWZ, OPB70HWZ) and aperture lens for improved resolution for the (OPB705, OPB705WZ, OPB70AWZ, OPB70CWZ, OPB70DWZ). The OPB704G and OPB704GWZ offers excellent protection for dirty environments. The phototransistor responds to illumination from the emitter when a reflective object passes within the field of view centered typically at 0.15” (3.8 mm). Custom electrical, wire, cabling and Ordering Information connectors are available. Contact Part LED Peak Detector Optical Cover Lead or Wire your local representative or OPTEK OPB703 0.160" Leads for more information. None OPB703WZ 24" / 26 AWG Wire OPB704 0.160" Leads  OPB704WZ 24" / 26 AWG Wire Blue OPB70HWZ Transistor 24” / 26 AWG Wire  Window  OPB704G 890 nm 0.160" Leads  OPB704GWZ 24" / 26 AWG Wire  OPB705 0.160" Leads   OPB705WZ Aperture  OPB70AWZ Darlington OPB70BWZ Rbe Transistor Blue Window OPB70CWZ Rbe Transistor 24" / 26 AWG Wire Aperture OPB70DWZ Transistor 640 nm OPB70EWZ Rbe Transistor Clear Window RoHS OPB70FWZ Transistor

OPB703, OPB704, OPB705 OP- B703, OP- 1 4 2 3 OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ An- Collector Anode Collector Anode Collector Cathode Emitter Cath- Emitter Cathode Emitter

OPB704G OPB704GWZ

Absolute Maximum Ratings (T =25°C unless otherwise noted) A Storage Temperature Range -40°C to +80° C Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 240° C(1) Input Diode Forward DC Current 40 mA Reverse DC Voltage 2 V Power Dissipation 100 mW(2) Output Photodetector Collector-Emitter Voltage Phototransistor 30 V Photodarlington 15 V Emitter-Collector Voltage 5 V Collector DC Current 25 mA Power Dissipation 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C above 25° C.

Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) V Forward Voltage - - 1.7 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP505 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA (BR)CEO CE V Emitter-Collector Breakdown Voltage 5 - - V I = 100µA (BR)ECO EC I Collector Dark Current - - 250 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled On-State Collector Current OPB70HWZ 0.60 - 3.5 IC(ON) OPB703, OPB703WZ 0.30 - 2.5 m A VCE = 5 V, IF = 40mA , d = 0.15” (4)(6) OPB704, OPB704WZ 0.20 - 2.5 OPB704G, OPB704GWZ 0.50 - 6.0 V = 5 V, I = 40mA , d = 0.20” (4)(6) CE F Crosstalk I OPB703, OPB703WZ - - 20 CX µA V = 5 V, I = 40mA(5) OPB704, OPB704WZ, OPB70HWZ - - 20 CE F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C. (3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ, OPB70HWZ, OPB70AWZ, OPB70CWZ, OPB70DWZ, OPB70EWZ, and OPB70FWZ derate linearly 1.82 mW/° C above 25° C. (4) The distance from the assembly face to the reflective surface is d. (5) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata- log # E 152 7795. (7) All parameters tested using pulse techniques.

Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70AWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) V Forward Voltage - - 1.7 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output PhotoDarlington (See OP535 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 15 - - V I = 1.0 mA, E =0 (BR)CEO CE E V Emitter-Collector Breakdown Voltage 5 - - V I = 100µA, E =0 (BR)ECO EC E I Collector Dark Current - - 250 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled I On-State Collector Current 5.0 - 26.0 mA V = 5 V, I = 40mA , d = 0.15” (1)(3) C(ON) CE F V Saturation Voltage - - 1.15 V I = 400 µA, I = 40mA , d = 0.15” (1)(3) (SAT) C F I Crosstalk - - 25 µA V = 5 V, I = 40mA(2) CX CE F Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795.

Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70BWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) V Forward Voltage - - 1.7 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP705 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA (BR)CEO CE V Emitter-Collector Breakdown Voltage 0.4 - - V I = 100µA (BR)ECO EC I Collector Dark Current - - 100 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled On-State Collector Current I 0.50 - 3.0 mA V = 5 V, I = 40mA , d = 0.15” (1)(3) C(ON) OPB70BWZ CE F Crosstalk I - - 5 µA V = 5 V, I = 40mA(2) CX OPB70BWZ CE F Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata- log # E 152 7795.

Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70CWZ and OPB70EWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OVLAS6CB8 for additional information — for reference only) V Forward Voltage - - 2.6 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP505 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100µA, I = 0, E =0 (BR)CEO CE F E V Emitter-Collector Breakdown Voltage 0.4 - - V I = 100µA, I = 0, E =0 (BR)ECO EC F E I Collector Dark Current - - 100 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled OPB70CWZ .10 - 1.0 On-State Collector Cur- I mA V = 5 V, I = 40mA , d = 0.15” (21(3) C(ON) rent CE F OPB70EWZ .25 - 2.5 V Saturation Voltage - - 0.4 V I = 100 µA, I = 40mA , d = 0.15” (1)(3) (SAT) C F I Crosstalk - - 2 µA V = 5 V, I = 40mA(2) CX CE F Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795.

Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70DWZ and OPB70FWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OVLAS6CB8 for additional information — for reference only) V Forward Voltage - - 2.6 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP505 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100µA, I = 0, E =0 (BR)CEO CE F E V Emitter-Collector Breakdown Voltage 5.0 - - V I = 100µA, I = 0, E =0 (BR)ECO EC F E I Collector Dark Current - - 250 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled OPB70DWZ .10 - 1.5 On-State Collector Cur- I mA V = 5 V, I = 40mA , d = 0.15” (1)(3) C(ON) rent CE F OPB70FWZ .25 - 3.5 V Saturation Voltage - - 0.4 V I = 100 µA, I = 40mA , d = 0.15” (1)(3) (SAT) C(ON) F I Crosstalk - - 5.0 µA V = 5 V, I = 40mA(2) CX CE F Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795.

OPB703 - Output vs Distance OPB704 - Output vs Distance 1.8 1.8 Normalized at IF = 40 mA Normalized at IF = 40 mA Distance = 0.15" & Kodak 90% Distance = 0.15" & Kodak 90% 1.6 1.6 1.4 1.4 Kodak 90% Kodak 90% Kodak 19% Kodak 19% 1.2 Avery 1.2 Copier Paper Output1.0 CRoertrpoo Rraeteflective Output1.0 ARveetrroy RLaebfleelctive malized 0.8 malized 0.8 or or N N 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Distance (inches) Distance (inches) OPB705 - Output vs Distance Forward Voltage vs Forward Current vs Temp 1.6 1.8 Normalized at IF = 40 mA Distance = 0.15" & Kodak 90% Normalized Forward Current at 20 mA and 20° C 1.6 1.4 1.4 Kodak 90% Kodak 19% e Output 11..02 CARvoeeptrrioye rRL Paeabflpeeelcsrtive d Voltag1.2 ed war aliz 0.8 For Norm pical 1.0 0.6 Ty -40° C -20° C 0.4 0° C 0.8 20° C 40° C 0.2 60° C 80° C 0.0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 40 Distance (inches) Forward Current (mA)

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