ICGOO在线商城 > 传感器,变送器 > 光学传感器 - 光电晶体管 > OP644SL
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OP644SL产品简介:
ICGOO电子元器件商城为您提供OP644SL由OPTEK设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 OP644SL价格参考¥10.47-¥11.95。OPTEKOP644SL封装/规格:光学传感器 - 光电晶体管, Phototransistor 890nm Top View Pill。您可以下载OP644SL参考资料、Datasheet数据手册功能说明书,资料中有OP644SL 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | PHOTOTRANSIST NPN 890NM PILL PAK光电晶体管 NPN PHOTOTRANSISTOR |
产品分类 | |
品牌 | TT Electronics/Optek Technology |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 光电晶体管,Optek / TT Electronics OP644SL* |
数据手册 | |
产品型号 | OP644SL |
PCN组件/产地 | |
上升时间 | 15 us |
下降时间 | 15 us |
产品目录页面 | |
产品种类 | 光电晶体管 |
其它名称 | 365-1078 |
功率-最大值 | 50mW |
商标 | Optek / TT Electronics |
安装类型 | 表面贴装 |
封装 | Bulk |
封装/外壳 | 丸状 |
封装/箱体 | Pill |
工厂包装数量 | 25 |
最大功率耗散 | 50 mW |
最大工作温度 | + 125 C |
最大暗电流 | 100 nA |
最大集电极电流 | 50 mA |
最小工作温度 | - 65 C |
朝向 | 顶视图 |
标准包装 | 25 |
波长 | 890nm |
电压-集射极击穿(最大值) | 25V |
电流-暗(Id)(最大值) | 100nA |
电流-集电极(Ic)(最大值) | 50mA |
类型 | Chip |
视角 | - |
集电极—发射极最大电压VCEO | 25 V |
NPN Silicon Phototransistor OP600 Series Features: Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range PC Board Mounting Mechanically and spectrally matched to OP123 and OP223 LEDs TX and TXV processing available (see Hi-Rel section) Description: Each device in this series is a NPN silicon phototransistor in a hermetically sealed pill package. The narrow receiving angle provides excellent on-axis coupling The OP600 series devices are 100% production tested using infrared light for close correlation with OPTEK GaAs and GaAIAs emitters. Components in the OP600 series are mechanically and spectrally matched to the OP123 and OP233 series TX and TXV components are available. For more information, please contact your local representative or OPTEK. Please refer to Application Bulletins 208 and 210 for additional information and reliability (degradation) data, and to Application Bulletin 202 for pill-type soldering to PC Board. Applications: 1 Non-contact reflective object sensor Machine safety Pin # Sensor Assembly line automation End of travel sensor 1 Collector/Cathode Machine automation Door sensor 2 Emitter/Anode Ordering Information Light Current Input Power Part I (mA) Viewing 2 C(ON) E (mW/cm2) Number Sensor Min / Max E Angle OP600A 1.20 / NA OP600B 0.60 / 1.80 2.5 OP600C Transistor 0.30 / NA 35° OP643SL 4.00 / 8.00 20.0 OP644SL 7.00 / 22.00 D IMENSIO DNSIMAREE N I N S : I O[IMnNcilhlSiems eters] I[MNCILHL- RoHS DO NOT LOOK DIRECTLY AT LED WITH UNSHIELDED EYES OR DAMAGE TO RETINA MAY General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue B 09/2017 Page 1
NPN Silicon Phototransistor OP600 Series Absolute Maximum Ratings (TA = 25˚C unless otherwise noted) Collector-Emitter Voltage 25 V Emitter-Collector Voltage 5 V Storage Temperature Range -65° C to +150° C Operating Temperature Range -65° C to +125° C Soldering Temperature (5 seconds with soldering iron) 260° C(1)(2) Power Dissipation 50 mW(3) Continuous Collector Current 50 mA Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V = 5 V, E = 2.5 mW/cm2(5) CE E On-State Collector Current - OP600A 1.2 - 1.8 OP600B 0.6 - 1.8 I (4) mA C(ON) OP600C 0.3 - 1.8 V = 5 V, E = 20 mW/cm2(5) OP643SL 4.0 - 8.0 CE E OP644SL 7.0 - 22.0 - I Collector-Dark Current - - - nA V = 10 V, E = 0 CEO CE E V Collector-Emitter Breakdown Voltage 25 - - V I = 100 μA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 μA (BR)ECO E Collector-Emitter V (4) OP600 (A, B, C)(2)(7) - - 0.4 V I = 0.15 mA, E = 2.5 mW/cm2(5) CE(SAT) C E OP643-644 (SL)(2)(7) I = 0.4 mA, E = 20 mW/cm2(5) C E V = 5 V, I = 0.80 mA, t Rise Time - 15 - µs cc C r R = 1 kΩ, See Test Circuit L V = 5 V, I = 0.80 mA, t Fall Time - 15 - µs cc C f R = 1 kΩ, See Test Circuit L Notes: (1) Refer to Application Bulleting 202, which discusses proper techniques for soldering pill-type devices to PCBoards. (2) No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (3) Derate linearly 0.5 mW/° C above 25° C. (4) Junction temperature maintained at 25° C. (5) For OP600A, OP600B and OP600C, light source is a GaAIAs LED, peak wavelength = 890 nm, that provides irradiance of 2.5 mW/cm2. The source irradiance is not necessarily uniform over the entire lens area of the unit being tested. (6) For OP643SL and OP644SL, light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source. General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue B 09/2017 Page 2
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