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  • 型号: OP525DA
  • 制造商: OPTEK
  • 库位|库存: xxxx|xxxx
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OP525DA产品简介:

ICGOO电子元器件商城为您提供OP525DA由OPTEK设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供OP525DA价格参考以及OPTEKOP525DA封装/规格参数等产品信息。 你可以下载OP525DA参考资料、Datasheet数据手册功能说明书, 资料中有OP525DA详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

PHOTODARLINGTON NPN CLR 1210 SMD光电晶体管 Photo Darlington

产品分类

光学传感器 - 光电晶体管

品牌

TT Electronics/Optek Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光电晶体管,Optek / TT Electronics OP525DA-

数据手册

点击此处下载产品Datasheet

产品型号

OP525DA

PCN过时产品

点击此处下载产品Datasheet

上升时间

50 us

下降时间

50 us

产品

Phototransistors

产品种类

光电晶体管

其它名称

365-1476-2

功率-最大值

100mW

商标

Optek / TT Electronics

安装类型

表面贴装

封装

Reel

封装/外壳

1210(3225 公制)

封装/箱体

1210

工厂包装数量

1500

最大功率耗散

100 mW

最大工作温度

+ 85 C

最大暗电流

200 nA

最小工作温度

- 25 C

朝向

顶视图

标准包装

1,500

波长

935nm

电压-集射极击穿(最大值)

35V

电流-暗(Id)(最大值)

200nA

电流-集电极(Ic)(最大值)

30mA

类型

Chip

视角

25°

集电极—发射极最大电压VCEO

35 V

集电极—射极击穿电压

35 V

集电极—射极饱和电压

1.7 V

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PDF Datasheet 数据手册内容提取

Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F Features: OP525 and OP525DA OP525F • High Speed and High photo sensitivity • Fast response time • 1210 package size • High Current Gain • Water clear and black lens choices • Narrow Viewing Receiving Angle • Compatible with IR Reflow soldering process • Moisture Sensitivity Level: MSL3 Description: These devices consist of an NPN silicon phototransistor and photo darlington mounted in a miniature SMD package with a 1210 size chip carrier that is compatible with most automated mounting and position sensing equipment. The OP525 devices have a 1.8mm domed lens and viewing acceptance angle of 25° with higher collector current gains due to the lenses on package. The OP525 and OP525DA have a water clear lens that senses ambient light to higher wavelengths for applications from 450nm to 1120nm. The OP525F has a black domed lens to reduce ambient light noise. The OP525 series are tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than is possible with phototransistors. Applications: Ordering Information • Non-contact position sensing Part Number Sensor Viewing Angle • Datum detection OP525 Phototransistor 25º • Machine automation OP525DA Photo Darlington 25º • Optical encoders • Reflective and transmissive sensors OP525F Phototransistor 25º OP525 and OP525F Pin # Transistor 1 Collector 2 Emitter RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue F 05/2012 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Page 1 of 5

Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F OP525DA Package Dimensions Pin # Transistor 1 Collector 2 Emitter Recommended Solder Pad Patterns Note: Dimensions mm (inches) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue F 05/2012 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F Absolute Maximum Ratings (T =25°C unless otherwise noted) A Storage Temperature Range -40o C to +100o C Operating Temperature Range -40o C to +80o C Lead Soldering Temperature(1) 260° C Collector-Emitter Voltage OP525, OP525F 30 V OP525DA 35 V Emitter-Collector Voltage 5 V Collector Current OP525, OP525F 20 mA OP525DA 30 mA Power Dissipation(2) OP525, OP525F 75 mW OP525DA 100 mW Electrical Characteristics (T = 25°C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode On-State Collector Current OP525F 2.0 - - V = 5.0 V, E = 0.5 mW/cm2 I CE E C(ON) OP525 1.0 - - V = 5.0 V, E = 1.5 mW/cm2 (3) mA CE E OP525DA 10.0 - - V = 5.0 V, E = 0.15 mW/cm2 (3) CE E Collector-Emitter Saturation Voltage V OP525, OP525F - - 0.4 I = 100 µA, E = 1.0 mW/cm2 (3) CE(SAT) V C E OP525DA - - 1.7 I = 1 mA, E = 0.5 mW/cm2 (3) C E Collector-Emitter Dark Current I OP525, OP525F 100 CEO - - nA V = 10.0 V (4) OP525DA 200 CC Collector-Emitter Breakdown Voltage V OP525, OP525F 30 - - V I = 100 µA, E = 0 BR(CEO) C E OP525DA 35 I = 1 mA, E = 0 C E Emitter-Collector Breakdown Voltage V OP525, OP525F 5 - - I = 100 µA, E = 0 BR(ECO) V E E OP525DA 5 - - I = 100 µA, E = 0 E E Rise and Fall Times t t OP525, OP525F - 15 - µs I = 1 mA, R = 1KΩ r, f C L OP525DA 50 - I = 1 mA, R = 1KΩ C L λ 0.5 Spectral Bandwidth OP525F 750 - 1100 nm - Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.33 mW/° C above 25° C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formulate I = 10(0.04 t - ¾), where T is the ambient temperature in ° C. CEO A OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue F 05/2012 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Page 3 of 5

Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F OP525 and OP525DA Relative Response vs. Wavelength 100% 80% e s n o 60% p s e R e ativ 40% el R 20% 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) OP525 Collector Current—I (mA) vs Collector Current—I (mA) vs C C Collector-Emiiter Voltage V (V) Optical Power-Ee(mW/cm2) CE 3.5 100 3.0 A) A) m m 10 —I (c 2.5 Ee = 2.0mW/cm2 —I (c nt 2.0 nt urre Ee = 1.5mW/cm2 urre 1.0 or C 1.5 Ee = 1.25mW/cm2 or C ollect 0.1 ollect 0.1 C Ee = 1.0mW/cm2 C 0.5 Ee = 0.5mW/cm2 0 1 2 3 4 0 1 3 5 Collector-Emitter Voltage—V (V) Optical Power—Ee(mW/cm2) CE OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue F 05/2012 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Page 4 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F OP525DA Collector Current—I (mA) C Collector Current—I C vs 35 10 A) A) m 30 m ( ( c c10 —I 25 —I nt Ee = 0.50mW/ nt e 20 e rr Ee = 0.40mW/ rr1.0 u u C 15 C r Ee = 0.30mW/ r o o ct 10 ct e e.1 oll 5 Ee = 0.20mW/ oll C C Ee = 0.10mW/ 0 1 2 3 4 0 .25 .5 1 Collector-Emitter Voltage—V Optical Power—Ee(mW/cm2) CE OP525F Spectral Sensitivity Sensitivity Chart Relative Response Vs. Wavelength Relative Collector Current vs.Irradiance OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue F 05/2012 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Page 5 of 5