15 MHz, Rail-to-Rail, Dual Operational Amplifier OP262-EP FEATURES PIN CONFIGURATION Supports defense and aerospace applications OUT A 1 8 V+ (AQEC standard) –IN A 2 OP262-EP 7 OUT B MCoilnittaroryll etedm mpaenruatfuacretu rrainngge b (a−s5e5li°nCe t o +125°C) +INV A– 34 (NToOt Pto V SIEcaWle) 65 –+IINN BB 09256-003 One assembly/test site Figure 1. 8-Lead Narrow-Body SOIC (R Suffix) One fabrication site Enhanced product change notification Qualification data available on request GENERAL DESCRIPTION Wide bandwidth: 15 MHz The OP262-EP is a low power, precision op amp that features a Low offset voltage: 325 μV maximum rail-to-rail output and a 15 MHz bandwidth. With its low offset Low noise: 9.5 nV/√Hz @ 1 kHz voltage of 45 μV (typical) and low noise, it is well suited for Single-supply operation: 2.7 V to 12 V precision filter and control applications. Low supply current: 850 μA maximum This product operates from a single supply as low as 2.7 V or Rail-to-rail output swing from dual supplies up to ±6 V. The OP262-EP is specified over Low TCV : 1 μV/°C typical OS the military temperature range (−55°C to +125°C) and is available High slew rate: 13 V/μs in an 8-lead SOIC_N package. No phase inversion Unity-gain stable Additional applications information is available in the OP162/OP262/OP462 data sheet. APPLICATIONS Portable instrumentation Sampling ADC amplifiers Precision filters Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.

OP262-EP TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................6 Applications ....................................................................................... 1 ESD Caution...................................................................................6 Pin Configuration ............................................................................. 1 Typical Performance Characteristics ..............................................7 General Description ......................................................................... 1 Outline Dimensions ....................................................................... 11 Revision History ............................................................................... 2 Ordering Guide .......................................................................... 11 Specifications ..................................................................................... 3 Electrical Characteristics ............................................................. 3 REVISION HISTORY 7/10—Revision 0: Initial Version Rev. 0 | Page 2 of 12

OP262-EP SPECIFICATIONS ELECTRICAL CHARACTERISTICS V = 5.0 V, V = 0 V, T = 25°C, unless otherwise noted. S CM A Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V 45 325 μV OS −55°C ≤ T ≤ +125°C 1 mV A Input Bias Current I 360 600 nA B −55°C ≤ T ≤ +125°C 650 nA A Input Offset Current I ±2.5 ±25 nA OS −55°C ≤ T ≤ +125°C ±40 nA A Input Voltage Range V 0 4 V CM Common-Mode Rejection CMRR 0 V ≤ V ≤ 4.0 V, −55°C ≤ T ≤ +125°C 70 110 dB CM A Large Signal Voltage Gain A R = 2 kΩ, 0.5 ≤ V ≤ 4.5 V 30 V/mV VO L OUT R = 10 kΩ, 0.5 ≤ V ≤ 4.5 V 65 88 V/mV L OUT R = 10 kΩ, −55°C ≤ T ≤ +125°C 40 V/mV L A Offset Voltage Drift1 ΔV /ΔT 1 μV/°C OS Bias Current Drift ΔI/ΔT 250 pA/°C B OUTPUT CHARACTERISTICS Output Voltage Swing High V I = 250 μA, −55°C ≤ T ≤ +125°C 4.95 4.99 V OH L A I = 5 mA 4.85 4.94 V L Output Voltage Swing Low V I = 250 μA, −55°C ≤T ≤ +125°C 14 50 mV OL L A I = 5 mA 65 150 mV L Short-Circuit Current I Short to ground ±80 mA SC Maximum Output Current I ±30 mA OUT POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 7 V 120 dB S −55°C ≤ T ≤ +125°C 90 dB A Supply Current/Amplifier I V = 2.5 V 500 700 μA SY OUT −55°C ≤ T ≤ +125°C 850 μA A DYNAMIC PERFORMANCE Slew Rate SR 1 V < V < 4 V, R = 10 kΩ 10 V/μs OUT L Settling Time t To 0.1%, A = −1, V = 2 V step 540 ns S V O Gain Bandwidth Product GBP 15 MHz Phase Margin φ 61 Degrees m NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.5 μV p-p n Voltage Noise Density e f = 1 kHz 9.5 nV/√Hz n Current Noise Density i f = 1 kHz 0.4 pA/√Hz n 1 Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta. Rev. 0 | Page 3 of 12

OP262-EP V = 3.0 V, V = 0 V, T = 25°C, unless otherwise noted. S CM A Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V 50 325 μV OS −55°C ≤ T ≤ +125°C 1 mV A Input Bias Current I 360 600 nA B Input Offset Current I ±2.5 ±25 nA OS Input Voltage Range V 0 2 V CM Common-Mode Rejection CMRR 0 V ≤ V ≤ 2.0 V, −55°C ≤ T ≤ +125°C 70 110 dB CM A Large Signal Voltage Gain A R = 2 kΩ, 0.5 V ≤ V ≤ 2.5 V 20 V/mV VO L OUT R = 10 kΩ, 0.5 V ≤ V ≤ 2.5 V 20 30 V/mV L OUT OUTPUT CHARACTERISTICS Output Voltage Swing High V I = 250 μA 2.95 2.99 V OH L I= 5 mA 2.85 2.93 V L Output Voltage Swing Low V I = 250 μA 14 50 mV OL L I= 5 mA 66 150 mV L POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 7 V 110 dB S −55°C ≤ T ≤ +125°C 60 dB A Supply Current/Amplifier I V = 1.5 V 500 650 μA SY OUT −55°C ≤ T ≤ +125°C 850 μA A DYNAMIC PERFORMANCE Slew Rate SR R = 10 kΩ 10 V/μs L Settling Time t To 0.1%, A = −1, V = 2 V step 575 ns S V O Gain Bandwidth Product GBP 15 MHz Phase Margin φ 59 Degrees m NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.5 μV p-p n Voltage Noise Density e f = 1 kHz 9.5 nV/√Hz n Current Noise Density i f = 1 kHz 0.4 pA/√Hz n Rev. 0 | Page 4 of 12

OP262-EP V = ±5.0 V, V = 0 V, T = 25°C, unless otherwise noted. S CM A Table 3. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V 25 325 μV OS −55°C ≤ T ≤ +125°C 1 mV A Input Bias Current I 260 500 nA B −55°C ≤ T ≤ +125°C 650 nA A Input Offset Current I ±2.5 ±25 nA OS −55°C ≤ T ≤ +125°C ±40 nA A Input Voltage Range V −5 +4 V CM Common-Mode Rejection CMRR −4.9 V ≤ V ≤ +4.0 V, −55°C ≤ T ≤ +125°C 70 110 dB CM A Large Signal Voltage Gain A R = 2 kΩ, –4.5 V ≤ V ≤ +4.5 V 35 V/mV VO L OUT R = 10 kΩ, –4.5 V ≤ V ≤ +4.5 V 75 120 V/mV L OUT −55°C ≤ T ≤ +125°C 25 V/mV A Long-Term Offset Voltage1 V 600 μV OS Offset Voltage Drift2 ΔV /ΔT 1 μV/°C OS Bias Current Drift ΔI/ΔT 250 pA/°C B OUTPUT CHARACTERISTICS Output Voltage Swing High V I = 250 μA, −55°C ≤ T ≤ +125°C 4.95 4.99 V OH L A I= 5 mA 4.85 4.94 V L Output Voltage Swing Low V I = 250 μA, −55°C ≤ T ≤ +125°C −4.99 −4.95 V OL L A I= 5 mA −4.94 −4.85 V L Short-Circuit Current I Short to ground ±80 mA SC Maximum Output Current I ±30 mA OUT POWER SUPPLY Power Supply Rejection Ratio PSRR V = ±1.35 V to ±6 V 110 dB S −55°C ≤ T ≤ +125°C 60 dB A Supply Current/Amplifier I V = 0 V 650 800 μA SY OUT −55°C ≤ T ≤ +125°C 1.15 mA A V = 0 V 550 775 μA OUT −55°C ≤ T ≤ +125°C 1 mA A Supply Voltage Range V 3.0 (±1.5) 12 (±6) V S DYNAMIC PERFORMANCE Slew Rate SR −4 V < V < +4 V, R = 10 kΩ 13 V/μs OUT L Settling Time t To 0.1%, A = −1, V = 2 V step 475 ns S V O Gain Bandwidth Product GBP 15 MHz Phase Margin φ 64 Degrees m NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.5 μV p-p n Voltage Noise Density e f = 1 kHz 9.5 nV/√Hz n Current Noise Density i f = 1 kHz 0.4 pA/√Hz n 1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta. Rev. 0 | Page 5 of 12

OP262-EP ABSOLUTE MAXIMUM RATINGS Table 4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress Parameter Min rating only; functional operation of the device at these or any Supply Voltage ±6 V other conditions above those indicated in the operational Input Voltage1 ±6 V section of this specification is not implied. Exposure to absolute Differential Input Voltage2 ±0.6 V maximum rating conditions for extended periods may affect Internal Power Dissipation device reliability. SOIC (S) Observe Derating Curves Output Short-Circuit Duration Observe Derating Curves Storage Temperature Range −65°C to +150°C Table 5. Operating Temperature Range −55°C to +125°C Junction Temperature Range −65°C to +150°C Package Type θJA1 θJC Unit Lead Temperature Range, 8-Lead SOIC (R) 157 56 °C/W (Soldering, 10 sec) 300°C 1 θJA is specified for the worst-case conditions, that is, θJA is specified for a device soldered in circuit board for SOIC package. 1 For supply voltages greater than 6 V, the input voltage is limited to less than or equal to the supply voltage. 2 For differential input voltages greater than 0.6 V, the input current should be limited to less than 5 mA to prevent degradation or destruction of the input ESD CAUTION devices. Rev. 0 | Page 6 of 12

OP262-EP TYPICAL PERFORMANCE CHARACTERISTICS 250 125 VS = 5V VS = 5V 200 TCAO U= N2T5° =C V) 100 µ s) 720 OP AMPS E ( plifier 150 LTAG 75 m O A V TITY ( 100 FSET 50 N F A O QU UT P N 50 I 25 –0200 –140 –IN80PUT OF–F20SET VO4L0TAGE (1µ0V0) 160 09256-007 0–75 –50 –25 0TEMP2E5RATU5R0E (°C7)5 100 125 150 09256-010 Figure 2. Input Offset Voltage Distribution Figure 5. Input Offset Voltage vs. Temperature 100 0 VS = 5V VS = 5V 80 TA = 25°C –100 COUNT = ers) 360 OP AMPS T (nA) mplifi 60 RREN –200 A U TY ( S C NTI 40 BIA –300 UA UT Q P N 20 I –400 00.2 0.3 INP0U.5T OFF0S.7ET DRI0F.T9, TCVO1S.1 (µV,°C1).3 1.5 09256-008 –500–75 –50 –25 0TEMP2E5RATU5R0E (°C7)5 100 125 150 09256-011 Figure 3. Input Offset Voltage Drift (TCVOS) Figure 6. Input Bias Current vs. Temperature 420 15 VS = 5V VS = 5V A) CURRENT (nA) 324600 T CURRENT (n 10 AS FSE UT BI T OF 5 P U N 180 P I N I 1000 0.5 1.0COMM1O.5N-MO2D.E0 VOL2T.A5GE (V3).0 3.5 4.0 09256-009 0–75 –50 –25 0TEMP2E5RATU5R0E (°C7)5 100 125 150 09256-012 Figure 4. Input Bias Current vs. Common-Mode Voltage Figure 7. Input Offset Current vs. Temperature Rev. 0 | Page 7 of 12

OP262-EP 5.12 100 VS = 5V GH VOLTAGE (V) 55..0060 IOUT = 250µA W VOLTAGE (mV) 8600 VS = 10V OUTPUT HI 44..9848 IOUT = 5mA OUTPUT LO 4200 VS = 3V 4.82–75 –50 –25 0TEMP2E5RATU5R0E (°C7)5 100 125 150 09256-013 00 1 2 LOAD3 CURREN4T (mA) 5 6 7 09256-016 Figure 8. Output High Voltage vs. Temperature Figure 11. Output Low Voltage to Supply Rail vs. Load Current 0.10 1.0 VS = 5V 0.9 E (mV) 0.08 IOUT = 5mA mA) 00..87 VS = 10V TAG 0.06 NT ( 0.6 VS = 5V OL RE VS = 3V V R 0.5 W CU T LO 0.04 PLY 0.4 U P P U 0.3 UT S O 0.02 0.2 IOUT = 250µA 0.1 0–75 –50 –25 0TEMP2E5RATU5R0E (°C7)5 100 125 150 09256-014 0–75 –50 –25 0TEMP2E5RATU5R0E (°C7)5 100 125 150 09256-017 Figure 9. Output Low Voltage vs. Temperature Figure 12. Supply Current/Amplifier vs. Temperature 100 RL = 10kΩ 0.7 TA = 25°C 80 mV) mA) N (V/ 60 VS = 5V ENT ( 0.6 AI R G R EN-LOOP 40 RL = 2kΩ UPPLY CU 0.5 P S O 20 0.4 RL = 600kΩ 0–75 F–5ig0ure –1205. Ope0nT-ELMoPo2Ep5R GAaTiUn5R0 vEs .( °TCe7)m5per1a0t0ure 125 150 09256-015 F0igure 13.2 Supply CuS4rUrPePnLt/YA VmO6pLlTifAieGr Ev s(V.8 S)upply V1o0ltage 12 09256-018 Rev. 0 | Page 8 of 12

OP262-EP 50 4 VS = 5V 40 GAIN TA = 25°C 3 0.1% 0.01% 30 45 2 VS = 5V s) TA = 25°C e e N (dB) 2100 PHASE 91035 FT (Degr SIZE (V) 10 AI HI P G 0 180 SE S STE –1 A H –10 225 P –2 0.1% 0.01% –20 270 –3 –31000k 1MFREQUENCY (Hz)10M 100M 09256-019 –40 200 SE4T0T0LING TIM6E0 (0ns) 800 1000 09256-022 Figure 14. Open-Loop Gain and Phase vs. Frequency (No Load) Figure 17. Step Size vs. Settling Time 60 60 VS = 5V VS = 5V TA = 25°C 40 TRAL == 2853°0CΩ 50 VROL U=T 1 =0 k±Ω50mV B) CL = 5pF d N ( %) 40 GAI 20 T ( ED-LOOP 0 VERSHOO 30 +OS –OS S O 20 O L C –20 10 –3010k 100k FREQU1EMNCY (Hz) 10M 100M 09256-020 010 CAPACIT10A0NCE (pF) 1000 09256-023 Figure 15. Closed-Loop Gain vs. Frequency Figure 18. Small-Signal Overshoot vs. Capacitance 5 70 VS = 5V 60 TA = 25°C p-p) 4 WING (V 3 nV/ Hz) 50 T S TY ( 40 AXIMUM OUTPU 21 RVASVL C==L 5 1=V0 k1Ω NOISE DENSI 3200 M CL = 15pF 10 TA = 25°C DISTORTION<1% 010k 100kFREQUENCY (Hz)1M 10M 09256-021 01 10FREQUENCY (Hz)100 1k 09256-024 Figure 16. Maximum Output Swing vs. Frequency Figure 19. Voltage Noise Density vs. Frequency Rev. 0 | Page 9 of 12

OP262-EP 7 90 VS = 5V VS = 5V 6 TA = 25°C 80 TA = 25°C Hz) 5 70 A/ SITY (p 4 R (dB) 60 +PSRR –PSRR N R DE 3 PS 50 E S OI 2 40 N 1 30 01 10FREQUENCY (Hz)100 1k 09256-025 201k 10k FREQU1E00NkCY (Hz) 1M 10M 09256-028 Figure 20. Current Noise Density vs. Frequency Figure 23. PSRR vs. Frequency 300 VS = 5V 20mV 2s 250 TA = 25°C Ω) E ( 200 C N A D PE 150 T IM AVCL = 10 U TP 100 U O AVCL = 1 VS = 5V 50 AV = 100kΩ 1000k FREQU1EMNCY (Hz) 10M 09256-026 en = 0.5µV p-p 09256-029 Figure 21. Output Impedance vs. Frequency Figure 24. 0.1 Hz to 10 Hz Noise 90 80 VTAS == 255V°C 2V VVISN == ±152VV p-p AV = 1 70 B) 60 d R ( R M 50 C 40 30 201k 10k FREQU1E00NkCY (Hz) 1M 10M 09256-027 2V 20µs 09256-030 Figure 22. CMRR vs. Frequency Figure 25. No Phase Reversal (VIN = 12 V p-p, VS = ±5 V, AV = 1) Rev. 0 | Page 10 of 12

OP262-EP OUTLINE DIMENSIONS 5.00(0.1968) 4.80(0.1890) 8 5 4.00(0.1574) 6.20(0.2441) 3.80(0.1497) 1 4 5.80(0.2284) 1.27(0.0500) 0.50(0.0196) BSC 1.75(0.0688) 0.25(0.0099) 45° 0.25(0.0098) 1.35(0.0532) 8° 0.10(0.0040) 0° COPLANARITY 0.51(0.0201) 0.10 SEATING 0.31(0.0122) 0.25(0.0098) 10..2470((00..00510507)) PLANE 0.17(0.0067) COMPLIANTTOJEDECSTANDARDSMS-012-AA C(RINOEFNPEATRRREOENNLCLTEIHNEOGSNDELISYM)AEANNRDSEIOARRNOESUNANORDETEDAIN-POMPFRIFLOLMPIMIRLELIATIMTEEERTFSEO;RIRNECUQHSUEDIVIINMAELDENENSSTIIOGSNNFS.OR 012407-A Figure 26. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model1 Temperature Range Package Description Package Option OP262TRZ-EP −55°C to +125°C 8-Lead Standard Small Outline Package [SOIC_N] R-8 OP262TRZ-EP-R7 −55°C to +125°C 8-Lead Standard Small Outline Package [SOIC_N] R-8 1 Z = RoHS Compliant Part. Rev. 0 | Page 11 of 12

OP262-EP NOTES ©2010 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D09256-0-7/10(0) Rev. 0 | Page 12 of 12

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: OP262DRUZ-REEL OP262HRUZ OP262TRZ-EP-R7 OP262HRUZ-REEL OP262GSZ-REEL OP262TRZ-EP OP262GSZ-REEL7 OP262GSZ