BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Low noise high gain microwave transistor  Noise figure (NF)=0.7dB at 5.8GHz  High maximum stable gain 27dB at 1.8GHz  110GHz f silicon germanium technology T 1.3 Applications  2nd LNA stage and mixer stage in DBS LNB’s  Satellite radio  Low noise amplifiers for microwave communications systems  WLAN and CDMA applications  Analog/digital cordless applications  Ka band oscillators (DRO’s) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 25 40 mA C P total power dissipation T 90C [1] - - 136 mW tot sp h DC current gain I =10mA; V =2V; 160 280 400 FE C CE T =25C j

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit C collector-base V =2V; f=1MHz - 70 - fF CBS CB capacitance f transition frequency I =25mA; V =2V; - 55 - GHz T C CE f=2GHz; T =25C amb G maximum power gain I =25mA; V =2V; [2] - 18 - dB p(max) C CE f=5.8GHz; T =25C amb NF noise figure I =5mA; V =2V; - 0.7 - dB C CE f=5.8GHz;  = ; S opt T =25C amb [1] T is the temperature at the solder point of the emitter lead. sp [2] G is the maximum power gain, if K>1. If K<1 then G =Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1 emitter 3 4 4 2 base 3 emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU725F/N1 - plastic surface-mounted flat pack package; reverse SOT343F pinning; 4 leads 4. Marking Table 4. Marking Type number Marking Description BFU725F/N1 B7* * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 2 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 10 V CBO V collector-emitter voltage open base - 2.8 V CEO V emitter-base voltage open collector - 1.0 V EBO I collector current - 40 mA C P total power dissipation T 90C [1] - 136 mW tot sp T storage temperature 65 +150 C stg T junction temperature - 150 C j [1] T is the temperature at the solder point of the emitter lead. sp 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to solder point 440 K/W th(j-sp) 001aah424 200 Ptot (mW) 150 100 50 0 0 40 80 120 160 Tsp (°C) Fig 1. Power derating curve BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 3 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characterist ics T =25C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V collector-base breakdown I =2.5A; I =0mA 10 - - V (BR)CBO C E voltage V collector-emitter breakdown I =1mA; I =0mA 2.8 - - V (BR)CEO C B voltage I collector current - 25 40 mA C I collector-base cut-off current I =0mA; V =4.5V - - 100 nA CBO E CB h DC current gain I =10mA; V =2V 160 280 400 FE C CE C collector-emitter capacitance V =2V; f=1MHz - 268 - fF CES CB C emitter-base capacitance V =0.5V; f=1MHz - 400 - fF EBS EB C collector-base capacitance V =2V; f=1MHz - 70 - fF CBS CB f transition frequency I =25mA; V =2V; f=2GHz; T =25C - 55 - GHz T C CE amb G maximum power gain I =25mA; V =2V; T =25C [1] p(max) C CE amb f=1.5GHz - 28 - dB f=1.8GHz - 27 - dB f=2.4GHz - 25.5 - dB f=5.8GHz - 18 - dB f=12GHz - 13 - dB s 2 insertion power gain I =25mA; V =2V; T =25C 21 C CE amb f=1.5GHz - 26.7 - dB f=1.8GHz - 25.4 - dB f=2.4GHz - 23 - dB f=5.8GHz - 16 - dB f=12GHz - 9.3 - dB NF noise figure I =5mA; V =2V;  =  ; T =25C C CE S opt amb f=1.5GHz - 0.42 - dB f=1.8GHz - 0.43 - dB f=2.4GHz - 0.47 - dB f=5.8GHz - 0.7 - dB f=12GHz - 1.1 - dB G associated gain I =5mA; V =2V;  =  ; T =25C ass C CE S opt amb f=1.5GHz - 24 - dB f=1.8GHz - 22 - dB f=2.4GHz - 20 - dB f=5.8GHz - 13.5 - dB f=12GHz - 10 - dB BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 4 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued T =25C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit P output power at 1dB gain I =25mA; V =2V; Z =Z =50; T =25C L(1dB) C CE S L amb compression f=1.5GHz - 8.5 - dBm f=1.8GHz - 9 - dBm f=2.4GHz - 8.5 - dBm f=5.8GHz - 8 - dBm IP3 third-order intercept point I =25mA; V =2V; Z =Z =50; T =25C; C CE S L amb f =f + 1MHz 2 1 f =1.5GHz - 17 - dBm 1 f =1.8GHz - 17 - dBm 1 f =2.4GHz - 17 - dBm 1 f =5.8GHz - 19 - dBm 1 [1] Gp(max) is the maximum power gain, if K1. If K1 then Gp(max)=MSG. 001aak271 001aak272 30 400 IC (1) hFE (mA) (2) (3) 350 (4) 20 (5) (6) (7) 300 (8) 10 (9) (10) 250 (1) (2) (11) (3) 0 200 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 VCE (V) IC (mA) Tamb=25C. Tamb=25C. (1) IB=110A (1) VCE=1V (2) IB=100A (2) VCE =1.5V (3) IB=90A (3) VCE=2V (4) IB=80A (5) IB=70A (6) IB=60A (7) IB=50A (8) IB=40A (9) IB=30A (10) IB=20A (11) IB=10A Fig 2. Collector current as a function of Fig 3. DC current gain a function of collector current; collector-emitter voltage; typical values typical values BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 5 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 001aah427 001aak273 160 60 CCBS (fF) fT (GHz) 120 40 80 20 40 0 0 0 4 8 12 0 10 20 30 40 VCB (V) IC (mA) f=1MHz, Tamb=25C. VCE=2V; f=2GHz; Tamb=25C. Fig 4. Collector-base capacitance as a function of Fig 5. Transition frequency as a function of collector collector-base voltage; typical values current; typical values 102 001aah429 (1) G (2) (dB) (3) MSG MSG Gmax(4) (5) 10 Gmax 1 10−1 1 10 102 IC (mA) VCE=2V; Tamb=25C. (1) f=1.5GHz (2) f=1.8GHz (3) f=2.4GHz (4) f=5.8GHz (5) f=12GHz Fig 6. Gain as a function of collector current; typical value BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 6 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 001aah430 001aah431 50 50 G G MSG (dB) (dB) 40 MSG 40 IS21I2 30 30 IS21I2 20 20 Gp(max) Gp(max) MSG MSG 10 10 0 0 10−2 10−1 1 10 102 10−2 10−1 1 10 102 f (GHz) f (GHz) VCE=2V; IC=5mA; Tamb=25C. VCE=2V; IC=25mA; Tamb=25C. Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values 001aah432 001aah433 2.0 2.0 NFmin NFmin (dB) (dB) 1.6 1.6 (1) (1) (2) 1.2 1.2 (2) 0.8 0.8 (3) (4) 0.4 (5) 0.4 0 0 0 10 20 30 0 4 8 12 16 IC (mA) f (GHz) VCE=2V; Tamb=25C. VCE=2V; Tamb=25C. (1) f=12GHz (1) IC=25mA (2) f=5.8GHz (2) IC=5mA (3) f=2.4GHz (4) f=1.8GHz (5) f=1.5GHz Fig 9. Minimum noise figure as a function of Fig 10. Minimum noise figure as a function of collector current; typical values frequency; typical values BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 7 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F D A E X y HE e 3 4 A c 2 1 Lp wM A bp b1 wM A detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) A UNIT max bp b1 c D E e e1 HE Lp w y 0.75 0.4 0.7 0.25 2.2 1.35 2.2 0.48 mm 1.3 1.15 0.2 0.1 0.65 0.3 0.5 0.10 1.8 1.15 2.0 0.38 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 05-07-12 SOT343F 06-03-16 Fig 11. Package outline SOT343F BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 8 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8. Abbreviations Acronym Description CDMA Code Division Multiple Access DBS Direct Broadcast Satellite DC Direct Current DRO Dielectric Resonator Oscillator LNA Low Noise Amplifier LNB Low Noise Block Ka Kurtz above NPN Negative-Positive-Negative RF Radio Frequency WLAN Wireless Local Area Network 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU725F_N1 v.2 20111103 Product data sheet - BFU725F_N1 v.1 Modifications: • Table1 on page1: The maximum value for V has been changed to 1.0 V. EBO • Table5 on page3: The maximum value for V has been changed to 1.0 V. EBO BFU725F_N1 v.1 20090713 Product data sheet - - BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 9 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Quick reference data — The Quick reference data is an extract of the product for such automotive applications, use and specifications, and (b) product data given in the Limiting values and Characteristics sections of this whenever customer uses the product for automotive applications beyond document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any Non-automotive qualified products — Unless this data sheet expressly liability, damages or failed product claims resulting from customer design and states that this specific NXP Semiconductors product is automotive qualified, use of the product for automotive applications beyond NXP Semiconductors’ the product is not suitable for automotive use. It is neither qualified nor tested standard warranty and NXP Semiconductors’ product specifications. in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 11.4 Trademarks In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer Notice: All referenced brands, product names, service names and trademarks (a) shall use the product without NXP Semiconductors’ warranty of the are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 11 of 12

BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Contact information. . . . . . . . . . . . . . . . . . . . . 11 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 November 2011 Document identifier: BFU725F_N1