From Deep UV to Mid-IR Super High-Power GaAlAs IR Emitters OD-250 An ITW Company FEATURES • Ultra-High Optical Output • Four Wire Bonds on Die Corners • Very Uniform Optical Beam • Standard 3-Lead TO-39 Hermetic Package • Chip Size: 0.026" x 0.026" Electro-Optical Characteristics at 25°C Parameters Test Conditions Min Typ Max Units Total Power Output, P I = 500 mA 160 250 mW o F Peak Emission Wavelength, λ I = 50 mA 850 nm P F Spectral Bandwidth at 50%, Δλ I = 50 mA 40 nm F Half Intensity Beam Angle, θ I = 50 mA 110 Deg F Forward Voltage, V I = 500 mA 1.7 2 Volts F F Reverse Breakdown Voltage, V I = 10 µA 5 30 Volts R R Rise Time I = 50 mA 20 nsec FP Fall Time I = 50 mA 20 nsec FP Absolute Maximum Ratings at 25°C Case Parameters Units Power Dissipation1 1000 mW Continuous Forward Current 500 mA Peak Forward Current (10 µs, 200 Hz)2 1.5 A Reverse Voltage 5 V Lead Soldering Temperature (1/16" from case for 10 sec) 260°C 1 Derate per thermal derating curve above 25°C. 2 Derate linearly above 25°C. Thermal Parameters Parameters Units Storage and Operating Temperature Range -40°C to 100°C Maximum Junction Temperature 100°C Thermal Resistance, R 1 145°C/W Typical THJA Thermal Resistance, R 2 75°C/W Typical THJA 1 Heat transfer minimized by measuring in still air with minimum heat conducting through leads. 2 Air circulating at a rapid rate to keep case temperature at 25°C. Revision July 16, 2018 Page 1 of 4

From Deep UV to Mid-IR Super High-Power GaAlAs IR Emitters OD-250 An ITW Company Revision July 16, 2018 Page 2 of 4

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From Deep UV to Mid-IR Super High-Power GaAlAs IR Emitters OD-250 An ITW Company Package Information All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two Anode pins must be externally connected together. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision July 16, 2018 Page 4 of 4