Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

N Z T 6 January 2014 6 0 / N Z T 6 6 NZT660 / NZT660A 0 A PNP Low Saturation Transistor — P N P L Description o w 4 These devices are designed with high-current gain and S low saturation voltage with collector currents up to 3 A a t continuous. u 3 r 2 a t 1 SOT-223 io n 1. Base 2,4. Collector 3. Emitter T r a n s i s t o r Ordering Information Part Number Marking Package Packing Method NZT660 660 SOT-223 4L Tape and Reel NZT660A 660A SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at Values are at T = 25°C unless otherwise noted. A Value Symbol Parameter Unit NZT660 NZT660A V Collector-Emitter Voltage -60 -60 V CEO V Collector-Base Voltage -80 -60 V CBO V Emitter-Base Voltage -5 -5 V EBO I Collector Current - Continuous -3 -3 A C T , T Operating and Storage Junction Temperature Range -55 to +150 -55 to +150 °C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty cycle operation. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT660 / NZT660A Rev. 1.1.0 1

N Z Thermal Characteristics(3) T 6 Values are at T = 25°C unless otherwise noted. 6 A 0 / Symbol Parameter Max. Unit N Z P Total Device Dissipation 2 W T D 6 RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W 60 A Note: — 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. P N P Electrical Characteristics L o w Values are at T = 25°C unless otherwise noted. A S a Symbol Parameter Conditions Min. Max. Unit t u Collector-Emitter Breakdown r BV I = -10 mA -60 V a CEO Voltage C ti o NZT660 -80 n BVCBO Collector-Base Breakdown Voltage IC = -100 μA V T NZT660A -60 r a BV Emitter-Base Breakdown Voltage I = -100 μA -5 V n EBO E s i V = -30 V -100 nA s ICBO Collector-Base Cut-Off Current VCCBB = -30 V, TA = 100°C -10 μA tor I Emitter-Base Cut-Off Current V = -4 V -100 nA EBO EB I = -100 mA, V = -2 V 70 C CE NZT660 100 300 I = -500 mA, V = -2 V h DC Current Gain(4) C CE NZT660A 250 550 FE I = -1 A, V = -2 V 80 C CE I = -3 A, V = -2 V 25 C CE I = -1 A, I = -100 mV -300 C B Collector-Emitter Saturation V (sat) NZT660 -550 mV CE Voltage(4) I = -3 A, I = -300 mV C B NZT660A -500 V (sat) Base-Emitter Saturation Voltage(4) I = -1 A, I = -100 mV -1.25 V BE C B V (on) Base-Emitter On Voltage(4) I = -1 A, V = -2 V -1 V BE C CE C Output Capacitance V = -10 V, I = 0, f = 1 MHz 45 pF ob CB E I = -100 mA, V = -5 V, f Transition Frequency C CE 75 MHz T f = 100 MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT660 / NZT660A Rev. 1.1.0 2

N Z Typical Performance Characteristics T 6 6 0 / N E(V) Z SATURATION VOLTAG 011...8241 β = 10 - 40°C ER ON VOLTAGE (V) 111...2461 Vc e = 2.0V - 40°C T660A — PN MITTER 0.6 25°C E-EMITT 00..68 25°C P Lo E-E 0.4 125°C AS 0.4 w V -BASBESAT0.02.001 I0 C . -0 1COLLECTO0R.1 CURRENT 1(A) 10 V - BBEON00.2.0001 0.0I0 C 1 - COLL0E.0C1TOR1 2C5°U0CR.1RENT (A)1 10 Satur a t Figure 1. Base-Emitter Saturation Voltage Figure 2. Base-Emitter On Voltage io vs. Collector Current vs. Collector Current n T r a V) n GE ( 0.8 400 sis A β = 10 f V =c e 1 =.0 2M.0HVz t OLT 0.7 350 Co b o or EMITTER V 000...456 25°C 125°C TANCE (pf) 223050000 ECTOR- 00..23 - 40°C CAPACI 110500 C i b o L OL 0.1 50 C V - CESAT 00.01 I - CO0L.L1ECTOR CURRE1NT (mA) 10 00.1 V0 C. 5E - CO1LLECTOR VOLT1A0GE2 (0V) 50 100 C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Input / Output Capacitance vs. Collector Current vs. Reverse Bias Voltage 1000 125°C Vc e = 2.0V 900 800 N AI 700 G NT 600 25°C E R 500 R U 400 C H - FE 300 - 40°C 200 100 0 0.0001 0.001 0.01 0.1 1 10 I - COLLECTOR CURRENT (mA) C Figure 5. Current Gain vs. Collector Current © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT660 / NZT660A Rev. 1.1.0 3

N Z Physical Dimensions T 6 6 0 SOT-223 / N Z T 6 6 0 A — P N P L o w S a t u r a t i o n T r a n s i s t o r Figure 6. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT660 / NZT660A Rev. 1.1.0 4

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower(cid:2) F-PFS(cid:2) Sync-Lock™ AX-CAP®* FRFET® ® BitSiC(cid:2) Global Power ResourceSM PowerTrench® ®* Build it Now(cid:2) GreenBridge(cid:2) PowerXS™ TinyBoost® CorePLUS(cid:2) Green FPS(cid:2) Programmable Active Droop(cid:2) TinyBuck® CorePOWER(cid:2) Green FPS(cid:2) e-Series(cid:2) QFET® TinyCalc(cid:2) CROSSVOLT(cid:2) Gmax(cid:2) QS(cid:2) TinyLogic® CTL(cid:2) GTO(cid:2) Quiet Series(cid:2) TINYOPTO(cid:2) Current Transfer Logic(cid:2) IntelliMAX(cid:2) RapidConfigure(cid:2) TinyPower(cid:2) DEUXPEED® ISOPLANAR(cid:2) (cid:2) TinyPWM(cid:2) Dual Cool™ Making Small Speakers Sound Louder TinyWire(cid:2) EcoSPARK® and Better™ Saving our world, 1mW/W/kWat a time™ TranSiC(cid:2) EfficientMax(cid:2) MegaBuck(cid:2) SignalWise(cid:2) TriFault Detect(cid:2) ESBC(cid:2) MICROCOUPLER(cid:2) SmartMax(cid:2) TRUECURRENT®* ® MicroFET(cid:2) SMART START(cid:2) (cid:3)SerDes(cid:2) MicroPak(cid:2) Solutions for Your Success(cid:2) FFFFFFFFaAPAAEaasiiCSCSTrrtccB(cid:2)TvTThhC®e® iiQll noddcur ®eShi e(cid:2)(cid:2)et m Siecroiensd(cid:2)uc tor® MMMmOOOPpPWioilclttTTeroiSoorOOHDnaPPLiMvrTaOieLvk(cid:2)arAe2G®x (cid:2)N(cid:2) (cid:2)ICA ®R ® SSSSSSSSuTuuPuuypnppppEMecereeAe®rFrrrSL FMSSEOTEOOTOHTT(cid:2)TTS(cid:2)(cid:2)®(cid:2)(cid:2) ® - 3--68 UUUVVVXCioSHlnstrli™XuCtFaaa(cid:2)E ®g Fl MTe R(cid:2)PaFlx uE(cid:2) sT(cid:2) (cid:2) * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 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