Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

N Z T 5 October 2014 6 0 / N Z T 5 6 NZT560 / NZT560A 0 A NPN Low-Saturation Transistor — N P N L o Features w - 4 S • These devices are designed with high-current gain and low-saturation a voltage with collector currents up to 3 A continuous. tu r 3 a 2 ti o 1 SOT-223 n T 1. Base 2,4. Collector 3. Emitter r a n s i s t o r Ordering Information Part Number Marking Package Packing Method NZT560 560 SOT-223 4L Tape and Reel NZT560A 560A SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage 60 V CEO V Collector-Base Voltage 80 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 3 A C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT560 / NZT560A Rev. 1.1.0

N Z Thermal Characteristics(3) T 5 Values are at T = 25°C unless otherwise noted. 6 A 0 / Symbol Parameter Max. Unit N Z Total Power Dissipation 1 W T PD Derate Above 25°C 8 mW/°C 56 0 RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W A — Note: N 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. P N L o Electrical Characteristics w - S Values are at T = 25°C unless otherwise noted. A a t u Symbol Parameter Conditions Min. Max. Unit r a BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V tio BV Collector-Base Breakdown Voltage I = 100 μA, I = 0 80 V n CBO C E T BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 5 V ra V = 30 V, I = 0 100 nA n I Collector Cut-Off Current CB E s CBO V = 30 V, I = 0, T = 100°C 10 μA is CB E A t o IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 100 nA r I = 100 mA, V = 2 V 70 C CE NZT560 100 300 I = 500 mA, V = 2 V h DC Current Gain(4) C CE NZT560A 250 550 FE I = 1 A, V = 2 V 80 C CE I = 3 A, V = 2 V 25 C CE I = 1 A, I = 100 mA 300 C B Collector-Emitter Saturation V (sat) NZT560 450 mV CE Voltage(4) I = 3 A, I = 300 mA C B NZT560A 400 V (sat) Base-Emitter Saturation Voltage(4) I = 1 A, I = 100 mA 1.25 V BE C B V (on) Base-Emitter On Voltage(4) I = 1 A, V = 2 V 1 V BE C CE C Output Capacitance V = 10 V, I = 0, f = 1.0 MHz 30 pF obo CB E I = 100 mA, V = 5 V, f Transition Frequency C CE 75 MHz T f = 100 MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT560 / NZT560A Rev. 1.1.0 2

N Z Typical Performance Characteristics T 5 6 0 E(V) / N G Z A V) T ON VOLT 11..24 ββ = 10 LTAGE ( 11..24 Vc e = 2.0V 560A RATI 1 N VO 1 — ATU - 40 °C R O - 40 °C N E-EMITTER S 000...468 12255 °°CC ASE-EMITTE 000...468 12255 °°CC PN Low V -BASBESAT0.02.001 I0 C . -0 1COLLECTO0R.1 CURRENT 1(A) 10 V - BBEON00.2.0001 0.0I0 C 1 - COLL0E.0C1TOR CU0R.1RENT (A)1 10 -Satu r Figure 1. Base-Emitter Saturation Voltage Figure 2. Base-Emitter On Voltage a t vs. Collector Current vs. Collector Current io n T V) r GE ( 0.8 450 an A β = 10 f = 1.0 MHz s LT 400 is O TTER V 0.6 125°C 25°C CE (pf) 330500 C i b o tor R-EMI 0.4 CITAN 220500 O A T - 40°C P 150 LLEC 0.2 CA 100 C o b o O 50 C V - CESAT 00.001 I C 0-. 0C1OLLECTOR0. 1CURRENT ((m1mAA)) 10 00.1 0.2 V0 C. E5 - CO1LLE2CTOR V5OLT1A0GE2 (0V) 50 100 Figure 3. Collector-Emitter Saturation Voltage Figure 4. Input / Output Capacitance vs. Collector Current vs. Reverse Bias Voltage 400 700 VCE = 2 V NZT560 NZT560A 600 T=125oC A AIN 300 TA=150oC AIN 500 G G NT 25oC NT 400 25oC VCE = 2 V RE 200 RE R R 300 CU -40oC CU -40oC C C 200 D 100 D h- FE h- FE 100 0 0 0.001 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 10.000 I- COLLECTOR CURRENT [A] I- COLLECTOR CURRENT [A] C C Figure 5. Current Gain vs. Collector Current Figure 6. Current Gain vs. Collector Current © 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com NZT560 / NZT560A Rev. 1.1.0 3

6.70 B 6.20 0.10 C B 3.10 2.90 3.25 4 1.90 A 3.70 6.10 3.30 1.90 1 3 0.84 0.60 2.30 0.95 2.30 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX 0.08 C 7.30 C 0.10 6.70 0.00 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. R0.15±0.05 10° C) DIMENSIONS DO NOT INCLUDE BURRS GAGE 5° OR MOLD FLASH. MOLD FLASH OR BURRS R0.15±0.05 DOES NOT EXCEED 0.10MM. PLANE D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. 0.35 10° E) LANDPATTERN NAME: SOT230P700X180-4BN 0° TYP 0.20 F) DRAWING FILENAME: MKT-MA04AREV3 0.25 10° 5° 0.60 MIN SEATING 1.70 PLANE DETAIL A SCALE: 2:1

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