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NZL7V5AXV3T1G产品简介:
ICGOO电子元器件商城为您提供NZL7V5AXV3T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NZL7V5AXV3T1G价格参考¥0.46-¥0.61。ON SemiconductorNZL7V5AXV3T1G封装/规格:TVS - 二极管, 。您可以下载NZL7V5AXV3T1G参考资料、Datasheet数据手册功能说明书,资料中有NZL7V5AXV3T1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TVS DIODE 5VWM 8.8VC SC89稳压二极管 ZEN TVS DIODE 7.5V |
产品分类 | |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,稳压二极管,ON Semiconductor NZL7V5AXV3T1G- |
数据手册 | |
产品型号 | NZL7V5AXV3T1G |
PCN设计/规格 | |
不同频率时的电容 | - |
产品目录绘图 | |
产品目录页面 | |
产品种类 | |
供应商器件封装 | SC-89-3 |
其它名称 | NZL7V5AXV3T1GOSDKR |
功率-峰值脉冲 | 75W |
功率耗散 | 240 mW |
包装 | Digi-Reel® |
单向通道 | 2 |
双向通道 | - |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SC-89,SOT-490 |
封装/箱体 | SC-89 |
工作温度 | -55°C ~ 150°C (TJ) |
工厂包装数量 | 3000 |
应用 | 通用 |
最大反向漏泄电流 | 1 uA |
最大齐纳阻抗 | 15 Ohms |
标准包装 | 1 |
电压-击穿(最小值) | 7.12V |
电压-反向关态(典型值) | 5V |
电压-箝位(最大值)@Ipp | 8.8V |
电压容差 | 5 % |
电流-峰值脉冲(10/1000µs) | 13.5A (8/20µs) |
电源线路保护 | 无 |
类型 | 齐纳 |
系列 | NZL7V5AXV3 |
配置 | Dual Common Anode |
齐纳电压 | 7.5 V |
NZL5V6AXV3T1 Series ESD Protection Diode Dual Common Anode These dual monolithic silicon ESD protection diodes are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical www.onsemi.com equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These PIN1.CATHODE 1 devices are ideal for situations where board space is at a premium. 2.CATHODE 3 3.ANODE 2 Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional MARKING DIAGRAM Configurations or a Single Bidirectional Configuration • 3 ESD Rating of Class N (exceeding 16 kV) per the Human Body Model • SC−89 Lx M (cid:2) Meets IEC61000−4−2 Level 4 (cid:2) CASE 463C • Low Leakage < 5.0 (cid:2)A STYLE 4 1 2 • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and L = Device Code PPAP Capable x = Specific Device • M = Date Code These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (cid:2) = Pb−Free Package Compliant (Note: Microdot may be in either location) Mechanical Characteristics: ORDERING INFORMATION CASE: Void-free, Transfer-molded, Thermosetting Plastic Epoxy Meets UL 94, V−0 Device Package Shipping† LEAD FINISH: 100% Matte Sn (Tin) NZL5V6AXV3T1G SC−89 3000/Tape & Reel MOUNTING POSITION: Any SZNZL5V6AXV3T1G SC−89 3000/Tape & Reel NZL6V8AXV3T1G SC−89 3000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements SZNZL6V8AXV3T1G SC−89 3000/Tape & Reel NZL6V8AXV3T3G SC−89 10000/Tape & Reel SZNZL6V8AXV3T3G SC−89 10000/Tape & Reel NZL7V5AXV3T1G SC−89 3000/Tape & Reel SZNZL7V5AXV3T1G SC−89 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: October, 2018 − Rev. 7 NZL5V6AXV3T1/D
NZL5V6AXV3T1 Series MAXIMUM RATINGS Rating Symbol Value Unit Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C °PD° 240 °mW° Derate above 25°C 1.9 mW/°C Thermal Resistance Junction to Ambient R(cid:3)JA 525 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C IEC61000−4−2 Contact ESD 10 kV IEC61000−4−2 Air 10 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 board with minimum recommended mounting pad. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) IF Symbol Parameter VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VCVBRVRWM V VBR Breakdown Voltage @ IT IIRT VF IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional Zener ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max @ IF = 10 mA for all types) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) Breakdown Voltage Surge VC (V) @ IR @ IPP = 1.0 VC (V) @ Max IPP Ppk Device VRWM VRWM VBR (Note 2) (V) @ IzT A† Max IPP† (A)† (W)† Device Marking V (cid:2)A Min Nom Max mA Typ Max Typ NZL5V6AXV3T1 L0 3.0 5.0 5.32 5.6 5.88 5.0 7.0 10.1 4.8 50 NZL6V8AXV3T1 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL6V8AXV3T3 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL7V5AXV3T1 L3 5.0 1.0 7.12 7.5 7.88 5.0 8.8 13.5 5.7 75 2. VBR measured at pulse test current IT at an ambient temperature of 25°C. † Surge current waveform per Figure 5. www.onsemi.com 2
NZL5V6AXV3T1 Series TYPICAL CHARACTERISTICS )T 9.0 250 @ I R B V 200 S) ( 8.0 7V5 T L O 150 GE (V 7.0 6V8 (nA)R 5V6 TA I 100 L O N V 6.0 5V6 6V8 W 50 7V5 O D K REA 5.0−55 −5 +45 +95 +145 0−55 −5 +45 +95 +145 B TEMPERATURE (°C) TEMPERATURE (°C) Figure 1. Typical Breakdown Voltage Figure 2. Typical Leakage Current versus Temperature versus Temperature 50 300 45 W) 40 m250 E (pF)3305 ATION (200 C 5V6 P AN25 6V8 7V5 SSI150 ACIT20 R DI P E100 A15 W C O FR−5 BOARD 10 P , D 50 5 P 0 0 0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 175 VOLTAGE (V) TEMPERATURE (°C) Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Steady State Power Derating Curve (Upper curve for each part is unidirectional mode, lower curve is bidirectional mode) 100 tr PEAK VALUE IRSM @ 8 (cid:2)s T 90 N E 80 PULSE WIDTH (tP) IS DEFINED R AS THAT POINT WHERE THE R U 70 PEAK CURRENT DECAY = 8 (cid:2)s C E 60 ULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s P K 40 A E P 30 F tP O 20 % 10 0 0 20 40 60 80 t, TIME ((cid:2)s) Figure 5. 8 x 20 (cid:2)s Pulse Waveform www.onsemi.com 3
NZL5V6AXV3T1 Series Figure 6. Positive 8 kV contact per IEC 6100−4−2 Figure 7. Negative 8 kV contact per IEC 6100−4−2 − NZL6V8AXV3T1G − NZL6V8AXV3T1G www.onsemi.com 4
NZL5V6AXV3T1 Series TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in an SC−89 when board space is at a premium. Two simplified examples package protects two separate lines using only one package. of surge protection applications are illustrated below. This adds flexibility and creativity to PCB design especially A KEYBOARD B TERMINAL FUNCTIONAL I/O C PRINTER DECODER D ETC. GND NZLxxxAXV3T1 Figure 8. Computer Interface Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O NZLxxxAXV3T1 CLOCK CONTROL BUS GND NZLxxxAXV3T1 Figure 9. Microprocessor Protection www.onsemi.com 5
NZL5V6AXV3T1 Series PACKAGE DIMENSIONS SC−89, 3−LEAD CASE 463C−03 ISSUE C A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI −X− Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS 3 IS THE MINIMUM THICKNESS OF BASE B −Y− S MATERIAL. 1 2 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. K MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX G A 1.50 1.60 1.70 0.059 0.063 0.067 2 PL B 0.75 0.85 0.95 0.030 0.034 0.040 D 3 PL C 0.60 0.70 0.80 0.024 0.028 0.031 0.08 (0.003) M X Y D 0.23 0.28 0.33 0.009 0.011 0.013 G 0.50 BSC 0.020 BSC H 0.53 REF 0.021 REF J 0.10 0.15 0.20 0.004 0.006 0.008 K 0.30 0.40 0.50 0.012 0.016 0.020 L 1.10 REF 0.043 REF M −−− −−− 10 _ −−− −−− 10 _ N −−− −−− 10 _ −−− −−− 10 _ M N S 1.50 1.60 1.70 0.059 0.063 0.067 J C STYLE 4: −T− SEATING PIN 1.CATHODE PLANE 2.CATHODE 3.ANODE SOLDERING FOOTPRINT H H L G RECOMMENDED PATTERN OF SOLDER PADS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com NZL5V6AXV3T1/D 6
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