NX3V1G384 Low-ohmic single-pole single-throw analog switch Rev. 6 — 4 November 2011 Product data sheet 1. General description The NX3V1G384 is a low-ohmic single-pole single-throw analog switch. It has two input/output terminals (Y and Z) and an active LOW enable input pin (E). When pin E is HIGH, the analog switch is turned off. Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise and fall times. The NX3V1G384 allows signals with amplitude up to V to be transmitted CC from Y to Z or from Z to Y. Its ultra-low ON resistance (0.3) and flatness (0.1) ensures minimal attenuation and distortion of transmitted signals. 2. Features and benefits  Wide supply voltage range from 1.4V to 4.3V  Very low ON resistance (peak): 0.8 (typical) at V =1.4V CC 0.5 (typical) at V =1.65V CC 0.3 (typical) at V =2.3V CC 0.25 (typical) at V =2.7V CC 0.25 (typical) at V =4.3V CC  High noise immunity  ESD protection: HBM JESD22-A114F Class 3A exceeds 7500V MM JESD22-A115-A exceeds 200V CDM AEC-Q100-011 revision B exceeds 1000V IEC61000-4-2 contact discharge exceeds 6000 V for switch ports  CMOS low-power consumption  Latch-up performance exceeds 100mA per JESD 78B Class II Level A  Direct interface with TTL levels at 3.0 V  Control input accepts voltages above supply voltage  High current handling capability (500 mA continuous current under 3.3 V supply)  Specified from 40C to +85C and from 40C to +125C 3. Applications  Cell phone  PDA  Portable media player

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 4. Ordering information Table 1. Ordering info rmation Type number Package Temperature range Name Description Version NX3V1G384GW 40Cto+125C TSSOP5 plastic thin shrink small outline package; 5 leads; SOT353-1 bodywidth 1.25 mm NX3V1G384GM 40C to+125C XSON6 plastic extremely thin small outline package; noleads; SOT886 6 terminals; body 11.450.5mm 5. Marking Table 2. Marking cod es[1] Type number Marking code NX3V1G384GW eL NX3V1G384GM eL [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram Y Z E Z Y E 001aag476 001aai598 Fig 1. Logic symbol Fig 2. Logic diagram 7. Pinning information 7.1 Pinning NX3V1G384 NX3V1G384 Y 1 6 VCC Y 1 5 VCC Z 2 5 n.c. Z 2 GND 3 4 E GND 3 4 E 001aai612 001aai611 Transparent top view Fig 3. Pin configuration SOT353-1 (TSSOP5) Fig 4. Pin configuration SOT886 (XSON6) NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 2 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 7.2 Pin description Table 3. Pin descripti on Symbol Pin Description SOT353-1 SOT886 Y 1 1 independent input or output Z 2 2 independent output or input GND 3 3 ground (0V) E 4 4 enable input (active LOW) n.c. - 5 not connected V 5 6 supply voltage CC 8. Functional description Table 4. Function tab le[1] Input E Switch L ON H OFF [1] H=HIGH voltage level; L=LOW voltage level. 9. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V supply voltage 0.5 +4.6 V CC V input voltage enable input E [1] 0.5 +4.6 V I V switch voltage [2] 0.5 V + 0.5 V SW CC I input clamping current V <0.5V 50 - mA IK I I switch clamping current V <0.5V or V >V + 0.5 V - 50 mA SK I I CC I switch current V >0.5V or V < V + 0.5 V; - 500 mA SW SW SW CC sourceorsink current V >0.5V or V < V + 0.5 V; - 750 mA SW SW CC pulsedat1msduration, < 10% duty cycle; peak current T storage temperature 65 150 C stg P total power dissipation T =40Cto+125C [3] - 250 mW tot amb [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 V. [3] For TSSOP5 package: above 87.5C the value of Ptotderates linearly with 4.0mW/K. For XSON6 package: above 118C the value of Ptotderates linearly with 7.8mW/K. NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 3 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 10. Recommended operating conditions Table 6. Recommend ed operating conditions Symbol Parameter Conditions Min Typ Max Unit V supply voltage 1.4 - 4.3 V CC V input voltage enable input E 0 - 4.3 V I V switch voltage [1] 0 - V V SW CC T ambient temperature 40 - +125 C amb t/V input transition rise and fall rate V =1.4Vto3.6V [2] - - 200 ns/V CC [1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch must not exceed 0.4V. If the switch current flows into terminal Z, noGND current will flow from terminal Y. In this case, there is no limit for the voltage drop across the switch. [2] Applies to control signal levels. 11. Static characteristics Table 7. Static charac teristics At recommended operating conditions; voltages are referenced to GND (ground 0V). Symbol Parameter Conditions T = 25 C T = 40 C to +125 C Unit amb amb Min Typ Max Min Max Max (85C) (125C) V HIGH-level V =1.4Vto1.95V 0.65V - - 0.65V - - V IH CC CC CC input voltage V =2.3 Vto2.7V 1.7 - - 1.7 - - V CC V =2.7 Vto3.6V 2.0 - - 2.0 - - V CC V =3.6 Vto4.3V 0.7V - - 0.7V - - V CC CC CC V LOW-level V =1.4Vto1.95V - - 0.35V - 0.35V 0.35V V IL CC CC CC CC input voltage V =2.3Vto2.7V - - 0.7 - 0.7 0.7 V CC V =2.7Vto3.6V - - 0.8 - 0.8 0.8 V CC V =3.6 Vto4.3V - - 0.3V - 0.3V 0.3V V CC CC CC CC I input leakage enable input E; - - - - 0.5 1 A I current V =GNDto4.3V; I V =1.4Vto4.3V CC I OFF-state Y port; seeFigure5; S(OFF) leakage V =1.4Vto3.6V - - 5 - 50 500 nA CC current V =3.6Vto4.3V - - 10 - 50 500 nA CC I ON-state Z port; seeFigure6; S(ON) leakage V =1.4Vto3.6V - - 5 - 50 500 nA CC current V =3.6Vto4.3V - - 10 - 50 500 nA CC I supply current V =V orGND; - - 100 - 690 6000 nA CC I CC V =GNDorV SW CC V =3.6V - - 100 - 690 6000 nA CC V =4.3V - - 150 - 800 7000 nA CC NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 4 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground 0V). Symbol Parameter Conditions T = 25 C T = 40 C to +125 C Unit amb amb Min Typ Max Min Max Max (85C) (125C) C input - 1.0 - - - - pF I capacitance C OFF-state - 70 - - - - pF S(OFF) capacitance C ON-state - 205 - - - - pF S(ON) capacitance 11.1 Test circuits VCC VCC E E VIH VIL Z Y Z Y IS IS VI GND VO VI GND VO 001aag479 001aag480 VI=0.3VorVCC0.3 V; VO=VCC  0.3 V or 0.3 V. VI=0.3VorVCC0.3 V; VO=open circuit. Fig 5. Test circuit for measuring OFF-state leakage Fig 6. Test circuit for measuring ON-state leakage current current 11.2 ON resistance Table 8. Resistance R ON At recommended operating conditions; voltages are referenced to GND (ground = 0V); for graphs see Figure8 to Figure14. Symbol Parameter Conditions T = 40 C to +85 C T = 40 C to +125 C Unit amb amb Min Typ[1] Max Min Max R ON resistance V =GNDtoV ; ON(peak) I CC (peak) I =100mA; seeFigure7 SW V =1.4V - 0.8 1.9 - 2.1  CC V =1.65V - 0.5 0.8 - 0.9  CC V =2.3V - 0.3 0.5 - 0.6  CC V =2.7V - 0.25 0.45 - 0.5  CC V =4.3V - 0.25 0.45 - 0.5  CC R ON resistance V =GNDtoV ; [2] ON(flat) I CC (flatness) I =100mA SW V =1.4V - 0.5 1.7 - 1.8  CC V =1.65V - 0.25 0.6 - 0.7  CC V =2.3V - 0.1 0.2 - 0.2  CC V =2.7V - 0.1 0.2 - 0.2  CC V =4.3V - 0.1 0.25 - 0.25  CC NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 5 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch [1] Typical values are measured at Tamb=25 C. [2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V and CC temperature. 11.3 ON resistance test circuit and graphs 001aah800 0.8 RON (Ω) 0.6 VSW (1) V 0.4 VCC (2) (3) VIL E 0.2 (4) (5) (6) Z Y Vl GND ISW 0 0 1 2 3 4 5 001aai599 VI (V) R =V / I . (1) V =1.5V. ON SW SW CC (2) VCC=1.8V. (3) VCC=2.5V. (4) V =2.7V. CC (5) VCC=3.3V. (6) VCC=4.3V. Measured at Tamb=25C. Fig 7. Test circuit for measuring ON resistance Fig 8. Typical ON resistance as a function of input voltage NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 6 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 001aah805 001aah801 0.8 0.6 RON (Ω) RON (Ω) 0.6 0.4 (1) 0.4 (1) (2) (3) (2) (3) 0.2 (4) 0.2 (4) 0 0 0 1 2 3 0 1 2 3 VI (V) VI (V) (1) Tamb=125C. (1) Tamb=125C. (2) Tamb=85C. (2) Tamb=85C. (3) Tamb=25C. (3) Tamb=25C. (4) Tamb=40C. (4) Tamb=40C. Fig 9. ON resistance as a function of input voltage; Fig 10. ON resistance as a function of input voltage; V =1.5V V =1.8V CC CC 001aah802 001aah803 0.6 0.6 RON RON (Ω) (Ω) 0.4 0.4 (1) (1) (2) (2) (3) (3) 0.2 0.2 (4) (4) 0 0 0 1 2 3 0 1 2 3 VI (V) VI (V) (1) Tamb=125C. (1) Tamb=125C. (2) Tamb=85C. (2) Tamb=85C. (3) Tamb=25C. (3) Tamb=25C. (4) Tamb=40C. (4) Tamb=40C. Fig 11. ON resistance as a function of input voltage; Fig 12. ON resistance as a function of input voltage; V =2.5V V =2.7V CC CC NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 7 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 001aah804 001aaj895 0.6 0.6 RON RON (Ω) (Ω) 0.4 0.4 (1) (1) (2) (3) (2) (4) (3) 0.2 0.2 (4) 0 0 0 1 2 3 4 0 1 2 3 4 5 VI (V) VI (V) (1) Tamb=125C. (1) Tamb=125C. (2) Tamb=85C. (2) Tamb=85C. (3) Tamb=25C. (3) Tamb=25C. (4) Tamb=40C. (4) Tamb=40C. Fig 13. ON resistance as a function of input voltage; Fig 14. ON resistance as a function of input voltage; V =3.3V V =4.3V CC CC 12. Dynamic characteristics Table 9. Dynamic cha racteristics At recommended operating conditions; voltages are referenced to GND (ground=0V); for load circuit Figure16. Symbol Parameter Conditions T = 25 C T = 40 C to +125 Unit amb amb C Min Typ[1] Max Min Max Max (85C) (125C) t enable time E to Z or Y; seeFigure15 en V =1.4Vto1.6V - 28 43 - 46 50 ns CC V =1.65Vto1.95V - 23 36 - 39 43 ns CC V =2.3Vto2.7V - 18 28 - 30 32 ns CC V =2.7Vto 3.6V - 15 26 - 27 29 ns CC V =3.6Vto 4.3V - 15 26 - 27 29 ns CC t disable time E to Z or Y; seeFigure15 dis V =1.4Vto1.6V - 12 23 - 24 26 ns CC V =1.65Vto1.95V - 9 16 - 18 19 ns CC V =2.3Vto2.7V - 6 11 - 12 13 ns CC V =2.7Vto 3.6V - 5 10 - 11 12 ns CC V =3.6Vto 4.3V - 5 10 - 11 12 ns CC [1] Typical values are measured at Tamb=25C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively. NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 8 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 12.1 Waveform and test circuits VI E input VM VM GND ten tdis VOH Y or Z output VX VX LOW to OFF OFF to LOW GND switch switch switch disabled enabled disabled 001aai600 Measurement points are given in Table10. Logic level: V is the typical output voltage that occurs with the output load. OH Fig 15. Enable and disable times. Table 10. Measuremen t points Supply voltage Input Output V V V CC M X 1.4V to 4.3V 0.5V 0.9V CC OH VCC E Y/Z Z/Y G VI V VO RL CL VEXT = 1.5 V 001aai601 Test data is given in Table11. Definitions test circuit: RL = Load resistance. C = Load capacitance including jig and probe capacitance. L VEXT = External voltage for measuring switching times. Fig 16. Load circuit for switching times Table 11. Test data Supply voltage Input Load V V t, t C R CC I r f L L 1.4V to 4.3V V 2.5ns 35pF 50 CC NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 9 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 12.2 Additional dynamic characteristics Table 12. Additional dy namic characteristics At recommended operating conditions; voltages are referenced to GND (ground=0V); V = GND or V (unless otherwise I CC specified); t = t 2.5ns. r f Symbol Parameter Conditions T = 25 C Unit amb Min Typ Max THD total harmonic f =20Hzto20 kHz; R =32; seeFigure17 [1] i L distortion V =1.4V; V =1V(p-p) - 0.05 - % CC I V =1.65V; V =1.2V (p-p) - 0.03 - % CC I V =2.3V; V =1.5V(p-p) - 0.01 - % CC I V =2.7V; V =2V(p-p) - 0.01 - % CC I V =4.3V; V =2V(p-p) - 0.01 - % CC I f 3 dB frequency R =50; seeFigure18 [1] (3dB) L response V =1.4 V to 4.3V - 25 - MHz CC  isolation (OFF-state) f =100kHz; R =50; seeFigure19 [1] iso i L V =1.4 V to 4.3V - 90 - dB CC V crosstalk voltage between digital inputs and switch; ct f =1MHz;C =50 pF; R =50; seeFigure20 i L L V =1.4 V to 3.6V - 0.3 - V CC V =3.6 V to 4.3V - 0.5 - V CC Q charge injection f =1MHz; C =0.1 nF; R =1 M; V =0V; inj i L L gen R =0; see Figure21 gen V =1.5 V - 6.5 - pC CC V =1.8 V - 6.5 - pC CC V =2.5V - 6.5 - pC CC V =3.3V - 6.5 - pC CC V =4.3V - 12 - pC CC [1] f is biased at 0.5V . i CC 12.3 Test circuits VCC 0.5VCC E VIL RL Y/Z Z/Y fi D 001aai602 Fig 17. Test circuit for measuring total harmonic distortion NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 10 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch VCC 0.5VCC E VIL RL Y/Z Z/Y fi dB 001aai603 Adjust fi voltage to obtain 0dBm level at output. Increase fi frequency until dB meter reads 3dB. Fig 18. Test circuit for measuring the frequency response when channel is in ON-state VCC 0.5VCC 0.5VCC E RL VIH RL Y/Z Z/Y fi dB 001aai604 Adjust f voltage to obtain 0dBm level at input. i Fig 19. Test circuit for measuring isolation (OFF-state) VCC E Y/Z Z/Y G VI RL RL CL V VO 0.5VCC 0.5VCC 001aai605 a. Test circuit logic off on off input (E) VO Vct 001aai606 b. input and output pulse definitions Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 11 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch VCC E Y/Z Z/Y Rgen G VI V VO RL CL Vgen GND 001aai607 a. Test circuit. logic off on off input (E) VO VO 001aai608 b. Input and output pulse definitions. Definition: Qinj=VO CL. VO = output voltage variation. R = generator resistance. gen Vgen = generator voltage. Fig 21. Test circuit for measuring charge injection NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 12 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 D E A X c y HE v M A Z 5 4 A2 A A1 (A3) θ 1 3 Lp L e w M bp e1 detail X 0 1.5 3 mm scale DIMENSIONS (mm are the original dimensions) UNIT mAax. A1 A2 A3 bp c D(1) E(1) e e1 HE L Lp v w y Z(1) θ mm 1.1 0.1 1.0 0.15 0.30 0.25 2.25 1.35 0.65 1.3 2.25 0.425 0.46 0.3 0.1 0.1 0.60 7° 0 0.8 0.15 0.08 1.85 1.15 2.0 0.21 0.15 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 00-09-01 SOT353-1 MO-203 SC-88A 03-02-19 Fig 22. Package outline SOT353-1 (TSSOP5) NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 13 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× L1 L (2) e 6 5 4 e1 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT mA(a1x) mAa1x b D E e e1 L L1 0.25 1.5 1.05 0.35 0.40 mm 0.5 0.04 0.6 0.5 0.17 1.4 0.95 0.27 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-07-15 SOT886 MO-252 04-07-22 Fig 23. Package outline SOT886 (XSON6) NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 14 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 14. Abbreviations Table 13. Abbreviation s Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model PDA Personal Digital Assistant TTL Transistor-Transistor Logic 15. Revision history T able 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3V1G384 v.6 20111104 Product data sheet - NX3V1G384 v.5 Modifications: • Legal pages updated. NX3V1G384 v.5 20101220 Product data sheet - NX3V1G384 v.4 NX3V1G384 v.4 20100324 Product data sheet - NX3V1G384 v.3 NX3V1G384 v.3 20100208 Product data sheet - NX3V1G384 v.2 NX3V1G384 v.2 20090414 Product data sheet - NX3V1G384 v.1 NX3V1G384 v.1 20080918 Product data sheet - - NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 15 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Constant or In no event shall NXP Semiconductors be liable for any indirect, incidental, repeated exposure to limiting values will permanently and irreversibly affect punitive, special or consequential damages (including - without limitation - lost the quality and reliability of the device. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — NXP Semiconductors damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial contract or any other legal theory. sale, as published at http://www.nxp.com/profile/terms, unless otherwise Notwithstanding any damages that customer might incur for any reason agreed in a valid written individual agreement. In case an individual whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards agreement is concluded only the terms and conditions of the respective customer for the products described herein shall be limited in accordance agreement shall apply. NXP Semiconductors hereby expressly objects to with the Terms and conditions of commercial sale of NXP Semiconductors. applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without No offer to sell or license — Nothing in this document may be interpreted or limitation specifications and product descriptions, at any time and without construed as an offer to sell products that is open for acceptance or the grant, notice. This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or to the publication hereof. other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, Export control — This document as well as the item(s) described herein authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior safety-critical systems or equipment, nor in applications where failure or authorization from competent authorities. NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 16 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch Non-automotive qualified products — Unless this data sheet expressly NXP Semiconductors’ specifications such use shall be solely at customer’s states that this specific NXP Semiconductors product is automotive qualified, own risk, and (c) customer fully indemnifies NXP Semiconductors for any the product is not suitable for automotive use. It is neither qualified nor tested liability, damages or failed product claims resulting from customer design and in accordance with automotive testing or application requirements. NXP use of the product for automotive applications beyond NXP Semiconductors’ Semiconductors accepts no liability for inclusion and/or use of standard warranty and NXP Semiconductors’ product specifications. non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in 16.4 Trademarks automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the Notice: All referenced brands, product names, service names and trademarks product for such automotive applications, use and specifications, and (b) are the property of their respective owners. whenever customer uses the product for automotive applications beyond 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NX3V1G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 4 November 2011 17 of 18

NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 18. Contents 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 5 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Functional description . . . . . . . . . . . . . . . . . . . 3 9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 10 Recommended operating conditions. . . . . . . . 4 11 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11.1 Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11.2 ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 5 11.3 ON resistance test circuit and graphs. . . . . . . . 6 12 Dynamic characteristics. . . . . . . . . . . . . . . . . . 8 12.1 Waveform and test circuits. . . . . . . . . . . . . . . . 9 12.2 Additional dynamic characteristics . . . . . . . . . 10 12.3 Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 13 14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 18 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 November 2011 Document identifier: NX3V1G384