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NX3L1T3157GW,125产品简介:
ICGOO电子元器件商城为您提供NX3L1T3157GW,125由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NX3L1T3157GW,125价格参考。NXP SemiconductorsNX3L1T3157GW,125封装/规格:接口 - 模拟开关,多路复用器,多路分解器, 1 Circuit IC Switch 2:1 500 mOhm 6-TSSOP。您可以下载NX3L1T3157GW,125参考资料、Datasheet数据手册功能说明书,资料中有NX3L1T3157GW,125 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC SWITCH SPDT 6TSSOP模拟开关 IC Analog SW Single SPDT 4.3V 6-Pin |
产品分类 | |
品牌 | NXP Semiconductors |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 开关 IC,模拟开关 IC,NXP Semiconductors NX3L1T3157GW,125- |
数据手册 | |
产品型号 | NX3L1T3157GW,125 |
PCN封装 | |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=24902 |
产品种类 | 模拟开关 IC |
供应商器件封装 | 6-TSSOP |
其它名称 | 568-7782-6 |
功能 | |
包装 | Digi-Reel® |
商标 | NXP Semiconductors |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
导通电阻 | 500 毫欧 |
导通电阻—最大值 | 1.6 Ohms |
封装 | Reel |
封装/外壳 | 6-TSSOP,SC-88,SOT-363 |
封装/箱体 | UMT |
工作温度 | -40°C ~ 125°C |
工作电源电压 | 3 V |
工厂包装数量 | 3000 |
开关配置 | SPDT |
最大功率耗散 | 250 mW |
最大工作温度 | + 125 C |
最小工作温度 | - 40 C |
标准包装 | 1 |
电压-电源,单/双 (±) | 1.4 V ~ 4.3 V |
电压源 | 单电源 |
电流-电源 | 150nA |
电源电压-最大 | 4.3 V |
电源电压-最小 | 1.4 V |
电源电流—最大值 | 0.00015 mA |
电路 | 1 x SPDT |
空闲时间—最大值 | 70 ns |
运行时间—最大值 | 90 ns |
NX3L1T3157 Low-ohmic single-pole double-throw analog switch Rev. 9.2 — 11 December 2019 Product data sheet 1. General description The NX3L1T3157 is a low-ohmic single-pole double-throw analog switch suitable for use as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two independent inputs/outputs (Y0 and Y1) and a common input/output (Z). Schmitt trigger action at the digital input makes the circuit tolerant to slower input rise and fall times. Low threshold digital input allows this device to be driven by 1.8 V logic levels in 3.3 V applications without significant increase in supply current I . This makes it possible CC for the NX3L1T3157 to switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level translation. The NX3L1T3157 allows signals with amplitude up to V CC to be transmitted from Z to Y0 or Y1, or from Y0 or Y1 to Z. Its low ON resistance (0.5 ) and flatness (0.13 ) ensures minimal attenuation and distortion of transmitted signals. 2. Features and benefits Wide supply voltage range from 1.4V to 4.3V Very low ON resistance (peak): 1.6 (typical) at V =1.4V CC 1.0 (typical) at V =1.65V CC 0.55 (typical) at V =2.3V CC 0.50 (typical) at V =2.7V CC 0.50 (typical) at V =4.3V CC Break-before-make switching High noise immunity ESD protection: HBM JESD22-A114F Class 3A exceeds 7500V MM JESD22-A115-A exceeds 200V CDM AEC-Q100-011 revision B exceeds 1000V IEC61000-4-2 contact discharge exceeds 8000 V for switch ports CMOS low-power consumption Latch-up performance exceeds 100mA per JESD78 Class II Level A 1.8 V control logic at V = 3.6 V CC Control input accepts voltages above supply voltage Very low supply current, even when input is below V CC High current handling capability (350 mA continuous current under 3.3 V supply) Specified from 40C to +85C and from 40C to +125C
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 3. Applications Cell phone PDA Portable media player 4. Ordering information Table 1. Ordering info rmation Type number Topside Package marking[1] Name Description Version NX3L1T3157GM MI XSON6 plastic extremely thin small outline package; no leads; 6 SOT886 terminals; body 1 x 1.45 x 0.5 mm [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 4.1 Ordering options Table 2. Ordering opt ions Type number Orderable Package Packing method Minimum Temperature partnumber orderquantity NX3L1T3157GM NX3L1T3157GM,115[1] XSON6 REEL 7" Q1 NDP 5000 T =40C to +125C amb NX3L1T3157GM NX3L1T3157GMZ XSON6 REEL 7" Q1 NDP 5000 T =40C to +125C amb SSB[2] [1] Will go EOL - migrate to new leadframe orderable part number [2] This packing method uses a Static Shielding Bag (SSB) solution. Material is to be kept in the sealed bag between uses. 5. Functional diagram Y1 S Z S 6 1 Y1 Z 4 Y0 3 Y0 001aac354 001aac355 Fig 1. Logic symbol Fig 2. Logic diagram NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 2 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 6. Pinning information 6.1 Pinning NX3L1T3157 Y1 1 6 S GND 2 5 VCC Y0 3 4 Z 001aah441 Transparent top view Fig 3. Pin configuration SOT886 (XSON6) 6.2 Pin description Table 3. Pin descripti on Symbol Pin Description Y1 1 independent input or output GND 2 ground (0V) Y0 3 independent input or output Z 4 common output or input V 5 supply voltage CC S 6 select input 7. Functional description Table 4. Function tab le[1] Input S Channel on L Y0 H Y1 [1] H=HIGH voltage level; L=LOW voltage level. NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 3 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 8. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V supply voltage 0.5 +4.6 V CC V input voltage select input S [1] 0.5 +4.6 V I V switch voltage [2] 0.5 V + 0.5 V SW CC I input clamping current V <0.5V 50 - mA IK I I switch clamping current V <0.5V or V >V + 0.5 V - 50 mA SK I I CC I switch current V >0.5V or V < V + 0.5 V; - 350 mA SW SW SW CC sourceorsink current V >0.5V or V < V + 0.5 V; - 500 mA SW SW CC pulsedat1msduration, < 10% duty cycle; peak current T storage temperature 65 +150 C stg P total power dissipation T =40Cto+125C [3] - 250 mW tot amb [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 V. [3] For XSON6 package: above 118C the value of Ptotderates linearly with 7.8mW/K. 9. Recommended operating conditions Table 6. Recommend ed operating conditions Symbol Parameter Conditions Min Max Unit V supply voltage 1.4 4.3 V CC V input voltage select input S 0 4.3 V I V switch voltage [1] 0 V V SW CC T ambient temperature 40 +125 C amb t/V input transition rise and fall rate V =1.4Vto4.3V [2] - 200 ns/V CC [1] To avoid sinking GND current from terminal Z when switch current flows in terminal Yn, the voltage drop across the bidirectional switch must not exceed 0.4V. If the switch current flows into terminal Z, noGND current will flow from terminal Yn. In this case, there is no limit for the voltage drop across the switch. [2] Applies to control signal levels. NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 4 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 10. Static characteristics Table 7. Static charac teristics At recommended operating conditions; voltages are referenced to GND (ground 0V). Symbol Parameter Conditions T = 25 C T = 40 C to +125 C Unit amb amb Min Typ Max Min Max Max (85C) (125C) V HIGH-level V =1.4Vto1.6V 0.9 - - 0.9 - - V IH CC input voltage V =1.65 Vto1.95V 0.9 - - 0.9 - - V CC V =2.3 Vto2.7V 1.1 - - 1.1 - - V CC V =2.7 Vto3.6V 1.3 - - 1.3 - - V CC V =3.6 Vto4.3V 1.4 - - 1.4 - - V CC V LOW-level V =1.4Vto1.6V - - 0.3 - 0.3 0.3 V IL CC input voltage V =1.65 Vto1.95V - - 0.4 - 0.4 0.3 V CC V =2.3 Vto2.7V - - 0.4 - 0.4 0.4 V CC V =2.7 Vto3.6V - - 0.5 - 0.5 0.5 V CC V =3.6 Vto4.3V - - 0.6 - 0.6 0.6 V CC I input leakage select input S; - - - - 0.5 1 A I current V =GNDto4.3V; I V =1.4Vto4.3V CC I OFF-state Y0 and Y1 port; S(OFF) leakage seeFigure4 current V =1.4Vto3.6V - - 5 - 50 500 nA CC V =3.6Vto4.3V - - 10 - 50 500 nA CC I ON-state Z port; seeFigure5 S(ON) leakage V =1.4Vto3.6V - - 5 - 50 500 nA CC current V =3.6Vto4.3V - - 10 - 50 500 nA CC I supply current V =V orGND; CC I CC V =GNDorV SW CC V =3.6V - - 100 - 690 6000 nA CC V =4.3V - - 150 - 800 7000 nA CC I additional V =GNDorV CC SW CC supply current V =2.6 V; V =4.3V - 2.0 4.0 - 7 7 A I CC V =2.6 V; V =3.6V - 0.35 0.7 - 1 1 A I CC V =1.8 V; V =4.3V - 7.0 10.0 - 15 15 A I CC V =1.8 V; V =3.6V - 2.5 4.0 - 5 5 A I CC V =1.8 V; V =2.5V - 50 200 - 300 500 nA I CC C input - 1.0 - - - - pF I capacitance C OFF-state - 35 - - - - pF S(OFF) capacitance C ON-state - 130 - - - - pF S(ON) capacitance NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 5 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 10.1 Test circuits switch S VCC 1 VIH S Y0 1 2 VIL VIL or VIH switch Z Y1 2 IS VI VO GND 001aac358 VI=0.3VorVCC0.3 V; VO=VCC 0.3 V or 0.3 V. Fig 4. Test circuit for measuring OFF-state leakage current switch S VCC 1 VIH S Y0 1 2 VIL VIL or VIH switch Z Y1 2 IS VI VO GND 001aac359 VI=0.3VorVCC0.3 V; VO=VCC 0.3 V or 0.3 V. Fig 5. Test circuit for measuring ON-state leakage current NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 6 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 10.2 ON resistance Table 8. ON resistanc e At recommended operating conditions; voltages are referenced to GND (ground = 0V); for graphs see Figure7 to Figure13. Symbol Parameter Conditions T = 40 C to +85 C T = 40 C to +125 C Unit amb amb Min Typ[1] Max Min Max R ON resistance V =GNDtoV ; ON(peak) I CC (peak) I =100mA; seeFigure6 SW V =1.4V - 1.6 3.7 - 4.1 CC V =1.65V - 1.0 1.6 - 1.7 CC V =2.3V - 0.55 0.8 - 0.9 CC V =2.7V - 0.5 0.75 - 0.9 CC V =4.3V - 0.5 0.75 - 0.9 CC R ON resistance V =GNDtoV ; [2] ON I CC mismatch I =100mA SW between V =1.4V - 0.04 0.3 - 0.3 CC channels V =1.65V - 0.04 0.2 - 0.3 CC V =2.3V - 0.02 0.08 - 0.1 CC V =2.7V - 0.02 0.075 - 0.1 CC V =4.3V - 0.02 0.075 - 0.1 CC R ON resistance V =GNDtoV ; [3] ON(flat) I CC (flatness) I =100mA SW V =1.4V - 1.0 3.3 - 3.6 CC V =1.65V - 0.5 1.2 - 1.3 CC V =2.3V - 0.15 0.3 - 0.35 CC V =2.7V - 0.13 0.3 - 0.35 CC V =4.3V - 0.2 0.4 - 0.45 CC [1] Typical values are measured at Tamb=25 C. [2] Measured at identical V , temperature and input voltage. CC [3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V and CC temperature. NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 7 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 10.3 ON resistance test circuit and graphs 001aag564 1.6 RON (Ω) 1.2 VSW (1) 0.8 V switch S VCC (2) 1 VIL (3) VIL or VIH S Y0 1 switch 2 VIH 0.4 (4) (5) (6) Z Y1 2 VI ISW GND 0 0 1 2 3 4 5 001aag563 VI (V) R =V / I . (1) V =1.5V. ON SW SW CC (2) VCC=1.8V. (3) VCC=2.5V. (4) V =2.7V. CC (5) VCC=3.3V. (6) VCC=4.3V. Measured at Tamb=25C. Fig 6. Test circuit for measuring ON resistance Fig 7. Typical ON resistance as a function of input voltage NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 8 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 001aag565 001aag566 1.6 1.0 R(ΩO)N R(ΩO)N 0.8 1.2 (1) (2) 0.6 (3) (1) (4) 0.8 (2) (3) (4) 0.4 0.4 0.2 0 0 0 1 2 3 0 1 2 3 VI (V) VI (V) (1) Tamb=125C. (1) Tamb=125C. (2) Tamb=85C. (2) Tamb=85C. (3) Tamb=25C. (3) Tamb=25C. (4) Tamb=40C. (4) Tamb=40C. Fig 8. ON resistance as a function of input voltage; Fig 9. ON resistance as a function of input voltage; V =1.5V V =1.8V CC CC 001aag567 001aag568 1.0 1.0 RON RON (Ω) (Ω) 0.8 0.8 0.6 (1) 0.6 (1) (2) (2) (3) (3) (4) (4) 0.4 0.4 0.2 0.2 0 0 0 1 2 3 0 1 2 3 VI (V) VI (V) (1) Tamb=125C. (1) Tamb=125C. (2) Tamb=85C. (2) Tamb=85C. (3) Tamb=25C. (3) Tamb=25C. (4) Tamb=40C. (4) Tamb=40C. Fig 10. ON resistance as a function of input voltage; Fig 11. ON resistance as a function of input voltage; V =2.5V V =2.7V CC CC NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 9 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 001aag569 001aaj896 1.0 1.0 RON RON (Ω) (Ω) 0.8 0.8 0.6 0.6 (1) (1) (2) (2) (3) (3) (4) 0.4 (4) 0.4 0.2 0.2 0 0 0 1 2 3 4 0 1 2 3 4 5 VI (V) VI (V) (1) Tamb=125C. (1) Tamb=125C. (2) Tamb=85C. (2) Tamb=85C. (3) Tamb=25C. (3) Tamb=25C. (4) Tamb=40C. (4) Tamb=40C. Fig 12. ON resistance as a function of input voltage; Fig 13. ON resistance as a function of input voltage; V =3.3V V =4.3V CC CC 11. Dynamic characteristics Table 9. Dynamic cha racteristics At recommended operating conditions; voltages are referenced to GND (ground=0V); for load circuit see Figure16. Symbol Parameter Conditions 25 C 40 C to +125 C Unit Min Typ[1] Max Min Max Max (85C) (125C) t enable time S to Z or Yn; en seeFigure14 V =1.4Vto1.6V - 50 90 - 120 120 ns CC V =1.65Vto1.95V - 36 70 - 80 90 ns CC V =2.3Vto2.7V - 24 45 - 50 55 ns CC V =2.7Vto 3.6V - 22 40 - 45 50 ns CC V =3.6Vto 4.3V - 22 40 - 45 50 ns CC t disable time S to Z or Yn; dis seeFigure14 V =1.4Vto1.6V - 32 70 - 80 90 ns CC V =1.65Vto1.95V - 20 55 - 60 65 ns CC V =2.3Vto2.7V - 12 25 - 30 35 ns CC V =2.7Vto 3.6V - 10 20 - 25 30 ns CC V =3.6Vto 4.3V - 10 20 - 25 30 ns CC NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 10 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch Table 9. Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground=0V); for load circuit see Figure16. Symbol Parameter Conditions 25 C 40 C to +125 C Unit Min Typ[1] Max Min Max Max (85C) (125C) t break-before-make see Figure15 [2] b-m time V =1.4Vto1.6V - 19 - 9 - - ns CC V =1.65Vto1.95V - 17 - 7 - - ns CC V =2.3Vto2.7V - 13 - 4 - - ns CC V =2.7Vto 3.6V - 10 - 3 - - ns CC V =3.6Vto 4.3V - 10 - 2 - - ns CC [1] Typical values are measured at Tamb=25 C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively. [2] Break-before-make guaranteed by design. 11.1 Waveform and test circuits VI S input VM GND ten tdis VOH Z output VX VX Y1 connected to VEXT OFF to HIGH HIGH to OFF GND tdis ten Z output VOH VX VX Y0 connected to VEXT HIGH to OFF OFF to HIGH GND 001aag570 Measurement points are given in Table10. Logic level: VOH is typical output voltage level that occurs with the output load. Fig 14. Enable and disable times Table 10. Measuremen t points Supply voltage Input Output V V V CC M X 1.4V to 4.3V 0.5V 0.9V CC OH NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 11 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC S Y0 Z Y1 G VI V VO RL CL VEXT = 1.5 V GND 001aag571 a. Test circuit VI 0.5VI 0.9VO 0.9VO VO tb-m 001aag572 b. Input and output measurement points Fig 15. Test circuit for measuring break-before-make timing VCC S Y0 1 switch Z Y1 2 G VI V VO RL CL VEXT = 1.5 V GND 001aag642 Test data is given in Table11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. V = External voltage for measuring switching times. EXT Fig 16. Load circuit for switching times Table 11. Test data Supply voltage Input Load V V t, t C R CC I r f L L 1.4V to 4.3V V 2.5ns 35pF 50 CC NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 12 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 11.2 Additional dynamic characteristics Table 12. Additional dy namic characteristics At recommended operating conditions; voltages are referenced to GND (ground=0V); V = GND or V (unless otherwise I CC specified); t = t 2.5ns; T = 25 C. r f amb Symbol Parameter Conditions Min Typ Max Unit THD total harmonic f =20Hzto20 kHz; R =32; seeFigure17 [1] i L distortion V =1.4V; V =1V(p-p) - 0.15 - % CC I V =1.65V; V =1.2V (p-p) - 0.10 - % CC I V =2.3V; V =1.5V(p-p) - 0.02 - % CC I V =2.7V; V =2V(p-p) - 0.02 - % CC I V =4.3V; V =2V(p-p) - 0.02 - % CC I f 3 dB frequency R =50; seeFigure18 [1] (3dB) L response V =1.4 V to 4.3V - 60 - MHz CC isolation (OFF-state) f =100kHz; R =50; seeFigure19 [1] iso i L V =1.4 V to 4.3V - 90 - dB CC V crosstalk voltage between digital inputs and switch; ct f =1MHz;C =50 pF; R =50; seeFigure20 i L L V =1.4 V to 3.6V - 0.2 - V CC V =3.6 V to 4.3V - 0.3 - V CC Q charge injection f =1MHz; C =0.1 nF; R =1 M; V =0V; inj i L L gen R =0; see Figure21 gen V =1.5 V - 3 - pC CC V =1.8 V - 4 - pC CC V =2.5V - 6 - pC CC V =3.3V - 9 - pC CC V =4.3V - 15 - pC CC [1] f is biased at 0.5V . i CC 11.3 Test circuits VCC 0.5VCC RL switch S 1 VIL S VIL or VIH Y0 1 switch 2 VIH Z Y1 2 fi D GND 001aag573 Fig 17. Test circuit for measuring total harmonic distortion NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 13 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC 0.5VCC RL switch S 1 VIL S VIL or VIH Y0 1 switch 2 VIH Z Y1 2 fi dB GND 001aag574 Adjust fi voltage to obtain 0dBm level at output. Increase fi frequency until dB meter reads 3dB. Fig 18. Test circuit for measuring the frequency response when channel is in ON-state 0.5VCC VCC 0.5VCC RL RL switch S 1 VIH S VIL or VIH Y0 1 switch 2 VIL Z Y1 2 fi dB GND 001aag561 Adjust f voltage to obtain 0dBm level at input. i Fig 19. Test circuit for measuring isolation (OFF-state) NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 14 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch switch S VCC 1 VIL 2 VIH S Y0 1 switch Z Y1 2 VI G liongpiuct RL RL CL V VO 0.5VCC 0.5VCC 001aah442 a. Test circuit logic input (S) off on off VO Vct 001aah443 b. Input and output pulse definitions Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 15 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch VCC S Y0 1 switch Z Y1 2 Rgen G VI VO RL CL Vgen GND 001aac366 a. Test circuit logic (S) off on off input VO ΔVO 001aac478 b. Input and output pulse definitions Definition: Qinj=VO CL. VO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. Fig 21. Test circuit for measuring charge injection NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 16 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 12. Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4x L1 L (2) e 6 5 4 e1 e1 6x A (2) A1 D E terminal 1 index area 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit A(1) A1 b D E e e1 L L1 max 0.5 0.04 0.25 1.50 1.05 0.35 0.40 mm nom 0.20 1.45 1.00 0.6 0.5 0.30 0.35 min 0.17 1.40 0.95 0.27 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. sot886_po Outline References European Issue date version IEC JEDEC JEITA projection 04-07-22 SOT886 MO-252 12-01-05 Fig 22. Package outline SOT886 (XSON6) NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 17 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 13. Abbreviations Table 13. Abbreviation s Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model PDA Personal Digital Assistant 14. Revision history T able 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3L1T3157 v.9.2 20191211 Product data sheet - NX3L1T3157 v.9.1 Modifications: • Corrected temperature range in Table 2 “Ordering options” from “-40C to +85C” to “-40C to +125C” NX3L1T3157 v.9.1 20191203 Product data sheet - NX3L1T3157 v.9 Modifications: • Package SOT886 requiring SSB added. Refer to PCN number 201909001 XSON6 (SOT886) Assembly/Test Transfer from ATGD and ATSN to ATBK • Removed NX3L1T3157GW,125 NX3L1T3157 v.9 20111109 Product data sheet - NX3L1T3157 v.8 Modifications: • Legal pages updated. NX3L1T3157 v.8 20110727 Product data sheet - NX3L1T3157 v.7 NX3L1T3157 v.7 20100121 Product data sheet - NX3L1T3157 v.6 NX3L1T3157 v.6 20090415 Product data sheet - NX3L1T3157 v.5 NX3L1T3157 v.5 20080728 Product data sheet - NX3L1T3157 v.4 NX3L1T3157 v.4 20080718 Product data sheet - NX3L1T3157 v.3 NX3L1T3157 v.3 20080408 Product data sheet - NX3L1T3157 v.2 NX3L1T3157 v.2 20080306 Product data sheet - NX3L1T3157 v.1 NX3L1T3157 v.1 20080103 Product data sheet - - NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 18 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 15. Legal information 15.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 15.2 Definitions Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Draft — The document is a draft version only. The content is still under malfunction of an NXP Semiconductors product can reasonably be expected internal review and subject to formal approval, which may result in to result in personal injury, death or severe property or environmental modifications or additions. NXP Semiconductors does not give any damage. NXP Semiconductors and its suppliers accept no liability for representations or warranties as to the accuracy or completeness of inclusion and/or use of NXP Semiconductors products in such equipment or information included herein and shall have no liability for the consequences of applications and therefore such inclusion and/or use is at the customer’s own use of such information. risk. Short data sheet — A short data sheet is an extract from a full data sheet Applications — Applications that are described herein for any of these with the same product type number(s) and title. A short data sheet is intended products are for illustrative purposes only. NXP Semiconductors makes no for quick reference only and should not be relied upon to contain detailed and representation or warranty that such applications will be suitable for the full information. For detailed and full information see the relevant full data specified use without further testing or modification. sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the Customers are responsible for the design and operation of their applications full data sheet shall prevail. and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product Product specification — The information and data provided in a Product design. It is customer’s sole responsibility to determine whether the NXP data sheet shall define the specification of the product as agreed between Semiconductors product is suitable and fit for the customer’s applications and NXP Semiconductors and its customer, unless NXP Semiconductors and products planned, as well as for the planned application and use of customer have explicitly agreed otherwise in writing. In no event however, customer’s third party customer(s). Customers should provide appropriate shall an agreement be valid in which the NXP Semiconductors product is design and operating safeguards to minimize the risks associated with their deemed to offer functions and qualities beyond those described in the applications and products. Product data sheet. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the 15.3 Disclaimers customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Limited warranty and liability — Information in this document is believed to Semiconductors products in order to avoid a default of the applications and be accurate and reliable. However, NXP Semiconductors does not give any the products or of the application or use by customer’s third party representations or warranties, expressed or implied, as to the accuracy or customer(s). NXP does not accept any liability in this respect. completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no Limiting values — Stress above one or more limiting values (as defined in responsibility for the content in this document if provided by an information the Absolute Maximum Ratings System of IEC60134) will cause permanent source outside of NXP Semiconductors. damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in In no event shall NXP Semiconductors be liable for any indirect, incidental, the Recommended operating conditions section (if present) or the punitive, special or consequential damages (including - without limitation - lost Characteristics sections of this document is not warranted. Constant or profits, lost savings, business interruption, costs related to the removal or repeated exposure to limiting values will permanently and irreversibly affect replacement of any products or rework charges) whether or not such the quality and reliability of the device. damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards sale, as published at http://www.nxp.com/profile/terms, unless otherwise customer for the products described herein shall be limited in accordance agreed in a valid written individual agreement. In case an individual with the Terms and conditions of commercial sale of NXP Semiconductors. agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to Right to make changes — NXP Semiconductors reserves the right to make applying the customer’s general terms and conditions with regard to the changes to information published in this document, including without purchase of NXP Semiconductors products by customer. limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior No offer to sell or license — Nothing in this document may be interpreted or to the publication hereof. construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 19 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch Export control — This document as well as the item(s) described herein product for such automotive applications, use and specifications, and (b) may be subject to export control regulations. Export might require a prior whenever customer uses the product for automotive applications beyond authorization from competent authorities. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any Non-automotive qualified products — Unless this data sheet expressly liability, damages or failed product claims resulting from customer design and states that this specific NXP Semiconductors product is automotive qualified, use of the product for automotive applications beyond NXP Semiconductors’ the product is not suitable for automotive use. It is neither qualified nor tested standard warranty and NXP Semiconductors’ product specifications. in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 15.4 Trademarks In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer Notice: All referenced brands, product names, service names and trademarks (a) shall use the product without NXP Semiconductors’ warranty of the are the property of their respective owners. 16. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NX3L1T3157 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 9.2 — 11 December 2019 20 of 21
NX3L1T3157 NXP Semiconductors Low-ohmic single-pole double-throw analog switch 17. Contents 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4.1 Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 Recommended operating conditions. . . . . . . . 4 10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 10.1 Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10.2 ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 7 10.3 ON resistance test circuit and graphs. . . . . . . . 8 11 Dynamic characteristics. . . . . . . . . . . . . . . . . 10 11.1 Waveform and test circuits. . . . . . . . . . . . . . . 11 11.2 Additional dynamic characteristics . . . . . . . . . 13 11.3 Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 17 13 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18 14 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 15.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 15.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 15.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 16 Contact information. . . . . . . . . . . . . . . . . . . . . 20 17 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2019. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2019 Document identifier: NX3L1T3157