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NUP1105LT1G产品简介:
ICGOO电子元器件商城为您提供NUP1105LT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NUP1105LT1G价格参考¥0.57-¥0.57。ON SemiconductorNUP1105LT1G封装/规格:TVS - 二极管, 。您可以下载NUP1105LT1G参考资料、Datasheet数据手册功能说明书,资料中有NUP1105LT1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TVS DIODE 24VWM 44VC SOT23TVS 二极管 - 瞬态电压抑制器 27V LIN BUS Protection |
产品分类 | |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,ON Semiconductor NUP1105LT1G- |
数据手册 | |
产品型号 | NUP1105LT1G |
PCN设计/规格 | |
不同频率时的电容 | 60pF @ 1MHz |
产品种类 | TVS 二极管 - 瞬态电压抑制器 |
供应商器件封装 | SOT-23-3(TO-236) |
其它名称 | NUP1105LT1GOSCT |
击穿电压 | 25.7 V |
功率-峰值脉冲 | 350W |
包装 | 剪切带 (CT) |
单向通道 | - |
双向通道 | 1 |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
尺寸 | 1.3 mm W x 2.9 mm L |
峰值浪涌电流 | 8 A |
峰值脉冲功率耗散 | 350 W |
工作温度 | -55°C ~ 150°C (TJ) |
工作电压 | 24 V |
工厂包装数量 | 3000 |
应用 | 通用 |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
极性 | Bidirectional |
标准包装 | 1 |
电压-击穿(最小值) | 25.7V |
电压-反向关态(典型值) | 24V (最小) |
电压-箝位(最大值)@Ipp | 44V |
电容 | 60 pF |
电流-峰值脉冲(10/1000µs) | 8A (8/20µs) |
电源线路保护 | 无 |
端接类型 | SMD/SMT |
类型 | 齐纳 |
系列 | NUP1105L |
钳位电压 | 44 V |
NUP1105LT1G, SZNUP1105LT1G ESD Protection Diode Single Line CAN/LIN Bus Protector The NUP1105L has been designed to protect LIN and single line www.onsemi.com CAN transceivers from ESD and other harmful transient voltage events. This device provides bidirectional protection for the data line SOT−23 BIDIRECTIONAL with a single SOT−23 package, giving the system designer a low cost VOLTAGE SUPPRESSOR option for improving system reliability and meeting stringent EMI 350 W PEAK POWER requirements. Features • SOT−23 Package Allows One Separate Bidirectional Configuration • 350 W Peak Power Dissipation per Line (8 x 20 (cid:2)sec Waveform) • Low Reverse Leakage Current (< 100 nA) SOT−23 • CASE 318 IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 STYLE 27 − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 (cid:2)s) 1 PIN1.ANODE • ISO 7637−1, Nonrepetitive EMI Surge Pulse TBD 3 2.ANODE • 2 3.CATHODE ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD EMI Surge Pulses • Flammability Rating UL 94 V−0 MARKING DIAGRAM • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and 27HM(cid:2) PPAP Capable (cid:2) • These Devices are Pb−Free and are RoHS Compliant 1 27H = Device Code Applications M = Date Code • Automotive Electronics (cid:2) = Pb−Free Package ♦ LIN Bus (Note: Microdot may be in either location) ♦ Single Line CAN • Industrial Control Networks ® ORDERING INFORMATION ♦ Smart Distribution Systems (SDS ) ♦ DeviceNet™ Device Package Shipping† NUP1105LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel SZNUP1105LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel NUP1105LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: October, 2017 − Rev. 7 NUP1105L/D
NUP1105LT1G, SZNUP1105LT1G MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol Rating Value Unit PPK Peak Power Dissipation W 8 x 20(cid:3)(cid:2)s Double Exponential Waveform (Note 1) 350 TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C ESD Human Body model (HBM) 16 kV Machine Model (MM) 400 V IEC 61000−4−2 Specification (Contact) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Unit VRWM Reverse Working Voltage (Note 2) 24 V VBR Breakdown Voltage IT = 1 mA (Note 3) 25.7 28.4 V IR Reverse Leakage Current VRWM = 24 V 15 100 nA VC Clamping Voltage IPP = 5 A (8 x 20 (cid:2)s Waveform) (Note 4) 40 V VC Clamping Voltage IPP = 8 A (8 x 20 (cid:2)s Waveform) (Note 4) 44 V IPP Maximum Peak Pulse Current 8 x 20 (cid:2)s Waveform (Note 4) 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Anode to GND) 60 pF VR = 0 V, f = 1 MHz (Anode to Anode) 30 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. Include SZ-prefix devices where applicable. www.onsemi.com 2
NUP1105LT1G, SZNUP1105LT1G TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 110 12.0 100 WAVEFORM A) PULSE WAVEFORM RENT 90 Ptr A=R 8A (cid:2)MsETERS ENT (10.0 8 x 20 (cid:2)s per Figure 1 UR 80 td = 20 (cid:2)s RR SE C 7600 c−t E CU 8.0 L S U L 6.0 P 50 td = IPP/2 U AK 40 K P E A 4.0 P 30 E OF 20 , PP % IP 2.0 10 0 0.0 0 5 10 15 20 25 30 25 30 35 40 45 50 t, TIME ((cid:2)s) VC, CLAMPING VOLTAGE (V) Figure 1. Pulse Waveform, 8 × 20 (cid:2)s Figure 2. Clamping Voltage vs Peak Pulse Current 45 30 40 29 35 30 28 , (nA)R 2205 V, (V)Z 27 VZ I 15 26 10 25 5 0 24 −60 −10 40 90 140 190 −60 −10 40 90 140 190 TEMPERATURE (°C) TEMPERATURE (°C) Figure 3. Typical Leakage vs. Temperature Figure 4. Typical V @ 1.0 mA vs. Temperature Z 60 25°C 50 F) p 40 E ( C AN 30 T CI A P 20 A C 10 0 0 5 10 15 20 25 VBIAS Figure 5. Capacitance vs. V BIAS www.onsemi.com 3
NUP1105LT1G, SZNUP1105LT1G APPLICATIONS SECTION The NUP1105L provides a surge protection solution for The NUP1105L device can be used to provide transcient the LIN data communication bus. The NUP1105L is a dual voltage suppression for a single data line CAN system. bidirectional surge protection device in a compact Figure 7 provides an example of a single data line CAN SOT−23 package. This device is based on Zener technology protection circuit. that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and CAN CAN_Data_Line ESD. The NUP1105L has been tested to EMI and ESD Transceiver levels that exceed the specifications of popular high speed LIN networks. NUP1105L VBattery = 8 to 18 V Figure 7. High−Speed and Fault Tolerant CAN Surge Voltage Protection Circuit Regulator VOUT = 5 V Receiver LIN Bus Transmitter LIN Transceiver NUP1105L Figure 6. LIN Transceiver www.onsemi.com 4
NUP1105LT1G, SZNUP1105LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4.DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBOURT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 27: END VIEW PIN 1. CATHODE 2.CATHODE 3.CATHODE RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SDS is a registered trademark of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com NUP1105L/D 5
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