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  • 型号: NUF8610MNTXG
  • 制造商: ON Semiconductor
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NUF8610MNTXG产品简介:

ICGOO电子元器件商城为您提供NUF8610MNTXG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NUF8610MNTXG价格参考。ON SemiconductorNUF8610MNTXG封装/规格:EMI/RFI 滤波器(LC,RC 网络), RC(Pi) EMI Filter 2nd Order 低通 8 Channel R = 50 欧姆,C = 8.5pF 16-VFDFN 裸露焊盘。您可以下载NUF8610MNTXG参考资料、Datasheet数据手册功能说明书,资料中有NUF8610MNTXG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

滤波器

描述

IC EMI FILTER 8CH 16-DFNEMI网络滤波器阵列 8 CH EMI FILTER IN DFN16

ESD保护

产品分类

EMI/RFI 滤波器(LC、RC 网络)EMI/RFI 器件

品牌

ON Semiconductor

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

EMI网络滤波器阵列,ON Semiconductor NUF8610MNTXG-

数据手册

点击此处下载产品Datasheet

产品型号

NUF8610MNTXG

PCN组件/产地

点击此处下载产品Datasheet

中心/截止频率

260MHz(截止值)

产品

EMI Network Filter Arrays

产品目录页面

点击此处下载产品Datasheet

产品种类

EMI网络滤波器阵列

元件数量

16

其它名称

NUF8610MNTXGOSCT

包装

剪切带 (CT)

商标

ON Semiconductor

外壳宽度

1.6 mm

外壳长度

4 mm

外壳高度

1 mm

大小/尺寸

0.157" 长 x 0.063" 宽(4.00mm x 1.60mm)

封装

Reel

封装/外壳

16-VFDFN 裸露焊盘

封装/箱体

DFN-16

工作温度

-40°C ~ 85°C

工作温度范围

- 40 C to + 85 C

工厂包装数量

4000

应用

移动设备的数据线路

截止频率

260 MHz

技术

RC(Pi)

数值

R = 50 欧姆,C = 8.5pF

标准包装

1

滤波器阶数

2nd

电容

8.5 pF

电感

-

电流

-

电路类型

RC (Pi) Filter

电阻

-

电阻-通道(Ω)

50

端接类型

SMD/SMT

类型

低通

系列

NUF8610

衰减值

15dB @ 800MHz ~ 2.2GHz

通道数

8

通道数量

8 Channel

频率范围

800 MHz to 2.2 GHz

高度

0.039"(1.00mm)

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PDF Datasheet 数据手册内容提取

NUF8610MN 8-Channel EMI Filter with Integrated ESD Protection The NUF8610MN is a eight−channel (C−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 50 (cid:2) and C = 8.5 pF deliver a cutoff frequency of 260 MHz and stop band attenuation greater than −15 dB from 800 MHz to 2.2 GHz. http://onsemi.com This performance makes the part ideal for parallel interfaces with data rates up to 173 Mbps in applications where wireless interference MARKING must be minimized. The specified attenuation range is very effective DIAGRAM in minimizing interference from 2G/3G, GPS, Bluetooth® and 1 WLAN signals. 16 DFN 846 The NUF8610MN is available in the low−profile 16−lead 1.6 mm x CASE 506AC AYW 4.0 mm DFN16 surface mount package. (cid:2) 1 Features/Benefits • ±8.0 kV ESD Protection on each channel (IEC61000−4−2 Level 4, 846 = Specific Device Code A = Assembly Location Contact Discharge) Y = Year • R/C Values of 50 (cid:2) and 8.5 pF deliver Exceptional S21 Performance W = Work Week Characteristics of 260 MHz f and −15 dB Stop Band Attenuation (cid:2) = Pb−Free Package 3dB from 800 MHz to 2.2 GHz • ORDERING INFORMATION Integrated EMI/ESD System Solution in DFN Package Offers Exceptional Cost, System Reliability and Space Savings Device Package Shipping† • This is a Pb−Free Device NUF8610MNTXG DFN16 4000 / Tape & Reel (Pb−Free) Applications • †For information on tape and reel specifications, EMI Filtering for LCD and Camera Data Lines including part orientation and tape sizes, please • EMI Filtering and Protection for I/O Ports and Keypads refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0 −5 −10 −15 Filter + ESDn R = 50 (cid:2) Filter + ESDn B) −20 d 1 ( −25 Cd = 8.5 pFCd = 8.5 pF S2 −30 −35 See Table 1 for pin description −40 −45 −50 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 FREQUENCY (Hz) Figure 1. Electrical Schematic Figure 2. Insertion Loss Characteristic (S21 Measurement) © Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: August, 2009 − Rev. 1 NUF8610MN/D

NUF8610MN 1 2 3 4 5 6 7 8 GND 16 15 14 13 12 11 10 9 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 16 Filter + ESD Channel 1 Filter 2 2 & 15 Filter + ESD Channel 2 Filter 3 3 & 14 Filter + ESD Channel 3 Filter 4 4 & 13 Filter + ESD Channel 4 Filter 5 5 & 12 Filter + ESD Channel 5 Filter 6 6 & 11 Filter + ESD Channel 6 Filter 7 7 & 10 Filter + ESD Channel 7 Filter 8 8 & 9 Filter + ESD Channel 8 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC61000−4−2 Contact Discharge VPP 8.0 kV Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage VRWM 5.0 V Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 8.0 V Leakage Current IR VRWM = 3.3 V 100 nA Resistance RA IR = 10 mA 42 50 58 (cid:2) Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 8.5 11 pF Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 17 22 pF 3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, 260 MHz appreciable attenuation occurs 6 dB Cut−Off Frequency (Note 1) f6dB Above this frequency, 425 MHz appreciable attenuation occurs 1. 50 (cid:2) source and 50 (cid:2) load termination. http://onsemi.com 2

NUF8610MN TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) 0 0 −5 −10 −10 −15 −20 B) −20 B) −30 d d 1 ( −25 1 ( S2 −30 S4 −40 −35 −50 −40 −60 −45 −50 −70 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 FREQUENCY (Hz) FREQUENCY (Hz) Figure 4. Insertion Loss Characteristic Figure 5. Analog Crosstalk Curve (S21 Measurement) (S41 Measurement) 2.0 60 E 58 C N ACITA 1.5 (cid:2)E () 56 P C 54 A N C 1.0 A ED ST 52 Z SI LI E A R 50 M 0.5 R O 48 N 0 46 0 1.0 2.0 3.0 4.0 5.0 −40 −20 0 20 40 60 80 REVERSE VOLTAGE (V) TEMPERATURE (°C) Figure 6. Typical Capacitance vs. Reverse Biased Voltage Figure 7. Typical Resistance over Temperature (Normalized Capacitance Cd at 2.5 V) 102.0 %) 101.5 E ( C N101.0 A T CI100.5 A P A100.0 C D E 99.5 Z LI A 99.0 M R O 98.5 N 98.0 −60 −40 −20 0 20 40 60 80 100 TEMPERATURE (°C) Figure 8. Normalized Capacitance over Temperature (Normalized @ 25(cid:2)C, V = 2.5 V, f = 1 MHz) R http://onsemi.com 3

NUF8610MN Theory of Operation approximation of a square wave, shown below in The NUF8610MN combines ESD protection and EMI Equations 1 and 2 in the Fourier series approximation. filtering conveniently into a small package for today’s size From this it can be seen that a square wave consists of odd constrained applications. The capacitance inherent to a order harmonics and to fully construct a square wave n must typical protection diode is utilized to provide the go to infinity. However, to retain an acceptable portion of the capacitance value necessary to create the desired frequency waveform, the first two terms are generally sufficient. These response based upon the series resistance in the filter. By two terms contain about 85% of the signal amplitude and combining this functionality into one device, a large number allow a reasonable square wave to be reconstructed. of discrete components are integrated into one small Therefore, to reasonably pass a square wave of frequency x package saving valuable board space and reducing BOM the minimum filter bandwidth necessary is 3x. All count and cost in the application. ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in Application Example significant rounding of the waveform and cause problems in The accepted practice for specifying bandwidth in a filter transmitting the correct data. For example, take the filter is to use the 3 dB cutoff frequency. Utilizing points such as with the response shown in Figure 9 and apply three the 6 dB or 9 dB cutoff frequencies results in signal different data waveforms. To calculate these three different degradation in an application. This can be illustrated in an frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be application example. A typical application would include used. EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the Equation 1: signal and its spectral content. By understanding these (cid:4)a (cid:4) (cid:6) tahpipnlgicsa, taino na.p Apr otyppriiactael fdialttear sciagnn able i ss epleacttteerdn foofr 1th’se adnedsi r0e’ds x(t)(cid:2)12(cid:3)2(cid:3)n(cid:2)1 2n1(cid:5)1sin((2n(cid:5)1)(cid:5)0t) (eq. 1) transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the Equation 2 (simplified form of Equation 1): (cid:4) (cid:6) pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be x(t)(cid:2)1(cid:3)2(cid:3) sin((cid:5)0t)(cid:3)sin(3(cid:5)0t)(cid:3)sin(5(cid:5)0t)(cid:3)(cid:7)(cid:7)(cid:7) (eq. 2) 2 1 3 5 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series −3 dB −6 dB −9 dB B) d e ( d u nit ag f1 M f2 f3 100k 1M 10M 100M 1G 10G Frequency (Hz) Figure 9. Filter Bandwidth From the above paragraphs it is shown that the maximum multiply the result by two). The following table gives the supported frequency of a waveform that can be passed bandwidth values and the corresponding maximum through the filter can be found by dividing the bandwidth by supported frequencies and the third harmonic frequencies. a factor of three (to obtain the corresponding data rate http://onsemi.com 4

NUF8610MN Table 2. Frequency Chart with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This Bandwidth Maximum Supported Third Harmonic serves to round the signal edges and skew the waveform, as Frequency Frequency is shown in Figure 10b. In the case that a 100 MHz signal is 3 dB – 33.33 MHz (f1) 100 MHz input to this filter, the third harmonic term is attenuated even 100 MHz further and results in even more rounding of the signal edges 6 dB – 66.67 MHz (f2) 200 MHz as is shown in Figure 10c. The result is the degradation of the 200 MHz data being transmitted making the digital data (1’s and 0’s) 9 dB – 100 MHz (f3) 300 MHz more difficult to discern. This does not include effects of 300 MHz other components such as interconnect and other path losses which could further serve to degrade the signal integrity. Considering that 85% of the amplitude of the square is in While some filter products may specify the 6 dB or 9 dB the first two terms of the Fourier series approximation most bandwidths, actually using these to calculate supported of the signal content is at the fundamental (maximum frequencies (and corresponding data rates) results in supported) frequency and the third harmonic frequency. If a significant signal degradation. To ensure the best signal signal with a frequency of 33.33 MHz is input to this filter, integrity possible, it is best to use the 3 dB bandwidth to the first two terms are sufficiently passed such that the signal calculate the achievable data rate. is only mildly affected, as is shown in Figure 10a. If a signal Input Waveform Output Waveform a) Frequency = f 1 Input Waveform Output Waveform b) Frequency = f 2 Input Waveform Output Waveform c) Frequency = f 3 Figure 10. Input and Output Waveforms of Filter http://onsemi.com 5

NUF8610MN PACKAGE DIMENSIONS DFN16 CASE 506AC−01 ISSUE B D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. PIN ONE 2. CONTROLLING DIMENSION: MILLIMETER. REFERENCE E 3. DIMENSION b APPLIES TO TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 2X 4. COPLANARITY APPLIES TO THE EXPOSED 0.15 C (A3) PAD AS WELL AS THE TERMINALS. TOP VIEW 2X MILLIMETERS 0.15 C DIM MIN MAX A 0.80 1.00 A1 0.00 0.05 (A3) A3 0.20 REF 0.10 C b 0.18 0.30 D 4.00 BSC A D2 3.10 3.30 16X E 1.60 BSC 0.08 C SEATING E2 0.30 0.50 SIDE VIEW PLANE e 0.50 BSC A1 C K 0.20 −−− L 0.20 0.40 D2 16XL e 2X 1 8 0.25 x 0.40 mm TEST PAD SIZE SOLDERING FOOTPRINT* E2 4.10 16 9 14X0.50 PITCH 16XK 16Xb 0.10 C A B NOTE 3 0.05 C BOTTOM VIEW 0.50 1.91 16X0.28 16X0.51 (cid:8) (cid:9) mm SCALE 16:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com NUF8610MN/D 6

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