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  • 型号: NUF8152MUT2G
  • 制造商: ON Semiconductor
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NUF8152MUT2G产品简介:

ICGOO电子元器件商城为您提供NUF8152MUT2G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NUF8152MUT2G价格参考。ON SemiconductorNUF8152MUT2G封装/规格:EMI/RFI 滤波器(LC,RC 网络), RC(Pi) EMI Filter 3rd Order 低通 8 Channel R = 28 欧姆,C = 17pF,L = 1nH 16-UFDFN 裸露焊盘。您可以下载NUF8152MUT2G参考资料、Datasheet数据手册功能说明书,资料中有NUF8152MUT2G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

滤波器

描述

IC EMI FILTER 8LINE ESD 16-UDFNEMI网络滤波器阵列 8 CH LC EMI FILTER

ESD保护

产品分类

EMI/RFI 滤波器(LC、RC 网络)EMI/RFI 器件

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

EMI网络滤波器阵列,ON Semiconductor NUF8152MUT2G-

数据手册

点击此处下载产品Datasheet

产品型号

NUF8152MUT2G

PCN组件/产地

点击此处下载产品Datasheet

中心/截止频率

125MHz(截止值)

产品

EMI Network Filter Arrays

产品种类

EMI网络滤波器阵列

元件数量

16

包装

带卷 (TR)

商标

ON Semiconductor

外壳宽度

1.2 mm

外壳长度

3.5 mm

外壳高度

0.55 mm

大小/尺寸

0.138" 长 x 0.047" 宽(3.50mm x 1.20mm)

封装

Reel

封装/外壳

16-UFDFN 裸露焊盘

封装/箱体

uDFN-16

工作温度

-40°C ~ 85°C

工作温度范围

- 40 C to + 85 C

工厂包装数量

3000

应用

移动设备的数据线路

截止频率

125 MHz

技术

RC(Pi)

数值

R = 28 欧姆,C = 17pF,L = 1nH

标准包装

3,000

滤波器阶数

3rd

电容

17 pF

电感

-

电流

-

电路类型

RC (Pi) Filter

电阻

28 Ohms

电阻-通道(Ω)

28

端接类型

SMD/SMT

类型

EMI Filter with Integrated ESD Protection

系列

NUF8152

衰减值

25dB @ 800MHz ~ 3GHz

通道数

8

通道数量

8 Channel

频率范围

800 MHz to 3 GHz

高度

0.022"(0.55mm)

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PDF Datasheet 数据手册内容提取

NUF8152, SZNUF8152 8-Channel EMI Filter with Integrated ESD Protection The NUF8152MU is a eight−channel (C−L−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 28 (cid:2), C = 17 pF and L = 1.0 nH deliver a cutoff frequency of 125 MHz and stop band attenuation greater than −25 dB hhttttpp::////oonnsseemmii..ccoomm from 800 MHz to 3.0 GHz. This performance makes the part ideal for parallel interfaces with MARKING data rates up to 83 Mbps in applications where wireless interference 16 DIAGRAM must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth® and 1 815 M (cid:2) WLAN signals. UDFN16 The NUF8152MU is available in the low−profile 16−lead 1.2 mm x CASE 517AF 1 3.5 mm x 0.5 mm UDFN16 surface mount package. Features/Benefits 815 = Specific Device Code • ±13 kV ESD Protection on each channel (IEC61000−4−2 Level 4, M = Month Code (cid:2) = Pb−Free Package Contact Discharge) • R/C Values of 28 (cid:2) and 17 pF and L = 1.0 nH Deliver Exceptional S21 Performance Characteristics of 125 MHz f and −25 dB Stop 3dB ORDERING INFORMATION Band Attenuation from 800 MHz to 3.0 GHz • Integrated EMI/ESD System Solution in UDFN Package Offers Device Package Shipping† Exceptional Cost, System Reliability and Space Savings NUF8152MUT2G UDFN16 3000 / Tape & • AEC−Q101 Qualified and PPAP Capable − SZNUF8152 (Pb−Free) Reel • SZ Prefix for Automotive and Other Applications Requiring Unique SZNUF8152MUT2G UDFN16 3000 / Tape & Site and Control Change Requirements (Pb−Free) Reel • These are Pb−Free Devices †For information on tape and reel specifications, including part orientation and tape sizes, please Applications refer to our Tape and Reel Packaging Specifications • EMI Filtering for LCD and Camera Data Lines Brochure, BRD8011/D. • EMI Filtering and Protection for I/O Ports and Keypads 0 -5 -10 -15 Filter + ESDn L = 1 nH R = 28 (cid:2) Filter + ESDn 21 (dB) --2250 S Cd = 17 pF Cd = 17 pF -30 -35 See Table 1 for pin description -40 -45 -50 1.0E + 6 10.0E + 6 100.0E + 6 1.0E + 9 10.0E + 9 FREQUENCY (Hz) Figure 1. Electrical Schematic Figure 2. Typical Insertion Loss Characteristics (S21 Measurement) © Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: November, 2011 − Rev. 0 NUF8152/D

NUF8152, SZNUF8152 Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 16 Filter + ESD Channel 1 Filter 2 2 & 15 Filter + ESD Channel 2 Filter 3 3 & 14 Filter + ESD Channel 3 Filter 4 4 & 13 Filter + ESD Channel 4 Filter 5 5 & 12 Filter + ESD Channel 5 Filter 6 6 & 11 Filter + ESD Channel 6 Filter 7 7 & 10 Filter + ESD Channel 7 Filter 8 8 & 9 Filter + ESD Channel 8 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC61000−4−2 Contact Discharge VPP 13 kV Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage VRWM 5.0 V Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 8.0 V Leakage Current IR VRWM = 3.3 V 100 nA Inductance L 1.0 3.0 nH Resistance RA 28 36 (cid:2) Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 17 pF Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 34 pF 3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, 125 MHz appreciable attenuation occurs 6 dB Cut−Off Frequency f6dB Above this frequency, 210 MHz appreciable attenuation occurs 1. 50 (cid:2) source and 50 (cid:2) load termination. http://onsemi.com 2

NUF8152, SZNUF8152 TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) 0 0 -5 -10 -10 -15 -20 B) -20 B) d d -30 21 ( -25 41 ( S S -30 -40 -35 -50 -40 -60 -45 -50 -70 1.0E + 6 10.0E + 6 100.0E + 6 1.0E + 9 10.0E + 9 1.0E + 6 1.0E + 7 1.0E +8 1.0E + 9 1.0E + 10 FREQUENCY (Hz) FREQUENCY (Hz) Figure 1. Typical Insertion Loss Characteristics Figure 2. Analog Crosstalk Curve (S21 Measurement) (S41 Measurement) 32 2 E 31 C N S) TA 1.5 M CI H 30 A O P E ( CA STANC 29 LIZED 1 SI MA RE 28 OR N 0.5 27 26 0 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 TEMPERATURE ((cid:3)C) REVERSE BIASED VOLTAGE (V) Figure 3. Typical Resistance Over Temperature Figure 4. Typical Line Capacitance vs. Reverse Bias Voltage (Normalized to Capacitance @ 2.5 V) http://onsemi.com 3

NUF8152, SZNUF8152 Theory of Operation approximation of a square wave, shown below in The NUF8152MU combines ESD protection and EMI Equations 1 and 2 in the Fourier series approximation. filtering conveniently into a small package for today’s size From this it can be seen that a square wave consists of odd constrained applications. The capacitance inherent to a order harmonics and to fully construct a square wave n must typical protection diode is utilized to provide the go to infinity. However, to retain an acceptable portion of the capacitance value necessary to create the desired frequency waveform, the first two terms are generally sufficient. These response based upon the series resistance in the filter. By two terms contain about 85% of the signal amplitude and combining this functionality into one device, a large number allow a reasonable square wave to be reconstructed. of discrete components are integrated into one small Therefore, to reasonably pass a square wave of frequency x package saving valuable board space and reducing BOM the minimum filter bandwidth necessary is 3x. All count and cost in the application. ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in Application Example significant rounding of the waveform and cause problems in The accepted practice for specifying bandwidth in a filter transmitting the correct data. For example, take the filter is to use the 3 dB cutoff frequency. Utilizing points such as with the response shown in Figure 5 and apply three the 6 dB or 9 dB cutoff frequencies results in signal different data waveforms. To calculate these three different degradation in an application. This can be illustrated in an frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be application example. A typical application would include used. EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the Equation 1: signal and its spectral content. By understanding these (cid:4)a (cid:4) (cid:6) tahpipnlgicsa, taino na.p Apr otyppriiactael fdialttear sciagnn able i ss epleacttteerdn foofr 1th’se adnedsi r0e’ds x(t)(cid:2)12(cid:3)2(cid:3)n(cid:2)1 2n1(cid:5)1sin((2n(cid:5)1)(cid:5)0t) (eq. 1) transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the Equation 2 (simplified form of Equation 1): (cid:4) (cid:6) pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be x(t)(cid:2)1(cid:3)2(cid:3) sin((cid:5)0t)(cid:3)sin(3(cid:5)0t)(cid:3)sin(5(cid:5)0t)(cid:3)(cid:7)(cid:7)(cid:7) (eq. 2) 2 1 3 5 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series −3 dB −6 dB −9 dB B) d e ( d u nit ag f1 M f2 f3 100k 1M 10M 100M 1G 10G Frequency (Hz) Figure 5. Filter Bandwidth From the above paragraphs it is shown that the maximum multiply the result by two). The following table gives the supported frequency of a waveform that can be passed bandwidth values and the corresponding maximum through the filter can be found by dividing the bandwidth by supported frequencies and the third harmonic frequencies. a factor of three (to obtain the corresponding data rate http://onsemi.com 4

NUF8152, SZNUF8152 Table 2. Frequency Chart with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This Bandwidth Maximum Supported Third Harmonic serves to round the signal edges and skew the waveform, as Frequency Frequency is shown in Figure 6b. In the case that a 100 MHz signal is 3 dB – 33.33 MHz (f1) 100 MHz input to this filter, the third harmonic term is attenuated even 100 MHz further and results in even more rounding of the signal edges 6 dB – 66.67 MHz (f2) 200 MHz as is shown in Figure 6c. The result is the degradation of the 200 MHz data being transmitted making the digital data (1’s and 0’s) 9 dB – 100 MHz (f3) 300 MHz more difficult to discern. This does not include effects of 300 MHz other components such as interconnect and other path losses which could further serve to degrade the signal integrity. Considering that 85% of the amplitude of the square is in While some filter products may specify the 6 dB or 9 dB the first two terms of the Fourier series approximation most bandwidths, actually using these to calculate supported of the signal content is at the fundamental (maximum frequencies (and corresponding data rates) results in supported) frequency and the third harmonic frequency. If a significant signal degradation. To ensure the best signal signal with a frequency of 33.33 MHz is input to this filter, integrity possible, it is best to use the 3 dB bandwidth to the first two terms are sufficiently passed such that the signal calculate the achievable data rate. is only mildly affected, as is shown in Figure 6a. If a signal Input Waveform Output Waveform a) Frequency = f 1 Input Waveform Output Waveform b) Frequency = f 2 Input Waveform Output Waveform c) Frequency = f 3 Figure 6. Input and Output Waveforms of Filter http://onsemi.com 5

NUF8152, SZNUF8152 PACKAGE DIMENSIONS UDFN16, 3.5x1.2, 0.4P CASE 517AF−01 ISSUE B D A A3 NOTES: 1. DIMENSIONING AND TOLERANCING PER 2X B ASME Y14.5M, 1994. ÉÇÉÇ 0.10 C 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL ÉÉÉ AND IS MEASURED BETWEEN 0.25 AND PIN ONE E 0.30 mm FROM TERMINAL. REFERENCE ÉÉÉ A1 DETAIL A 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 2X 0.10 C MILLIMETERS TOP VIEW DIM MIN NOM MAX A 0.45 0.50 0.55 (A3) A A1 0.00 0.03 0.05 DETAIL A A3 0.127 REF 0.10 C b 0.15 0.20 0.25 D 3.50 BSC D2 2.70 2.80 2.90 16X 0.08 C SPELAATNIENG EE2 0.20 1.02.03 0BSC0.40 SIDE VIEW C e 0.40 BSC A1 K 0.20 −−− −−− L 0.20 0.25 0.30 D2 14X SOLDERING FOOTPRINT* 16XL e 1 8 E2 1.35 1 0.35 16 9 16XK 16Xb BOTTOM VIEW 0.10 C A B 0.30 0.05 C NOTE 3 0.10 2.85 0.40 PITCH 15X 0.20 16X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com NUF8152/D 6