NTR5198NL Power MOSFET (cid:2) 60 V, 155 m , Single N−Channel Logic Level, SOT−23 Features • Small Footprint Industry Standard Surface Mount SOT−23 Package www.onsemi.com • Low R for Low Conduction Losses and Improved Efficiency DS(on) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) TYP ID MAX Compliant 155 m(cid:5) @ 10 V 60 V 2.2 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 205 m(cid:5) @ 4.5 V Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V N−Channel Gate−to−Source Voltage VGS ±20 V D Continuous Drain Steady TA = 25°C ID 2.2 A C(Nuortreesn t1 R, 2(cid:2),J −3m, abnd 4) State TA = 100°C 1.6 Power Dissipation TA = 25°C PD 1.5 W G R(N(cid:2)oJt−ems b1 and 3) TA = 100°C 0.6 Continuous Drain Steady TA = 25°C ID 1.7 A S C(Nuortree n1t, R2(cid:3), J3A, and 4) State TA = 100°C 1.2 Power Dissipation R(cid:3)JA TA = 25°C PD 0.9 W 3 MARKING DIAGRAM/ (Notes 1 and 3) PIN ASSIGNMENT TA = 100°C 0.4 Pulsed Drain Current TA = 25°C, IDM 27 A 1 Drain tp =10 (cid:4)s 2 3 Operating Junction and Storage Temperature TJ, −55 to °C SOT−23 AA6(cid:2) M(cid:2) Tstg 150 CASE 318 1 2 Source Current (Body Diode) IS 1.9 A STYLE 21 Gate Source Lead Temperature for Soldering Purposes TL 260 °C (1/8” from case for 10 s) AA6 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be (cid:2) = Pb−Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions *Date Code orientation may vary depending noted. upon manufacturing location. 2. Psi ((cid:2)) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. ORDERING INFORMATION 4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Device Package Shipping† NTR5198NLT1G SOT−23 3000 / (Pb−Free) Tape & Reel NTR5198NLT3G SOT−23 10000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2016 − Rev. 2 NTR5198NL/D

NTR5198NL THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Lead #3 − Drain (Notes 2 and 3) R(cid:2)J−mb 86 °C/W Junction−to−Ambient − Steady State (Note 3) R(cid:3)JA 139 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 (cid:4)A 60 V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Reference to 25°C, ID = 250 (cid:4)A 70 mV/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0 (cid:4)A VDS = 60 V TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = (cid:2)20 V (cid:2)100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 (cid:4)A 1.5 2.5 V Threshold Temperature Coefficient VGS(TH)/TJ Reference to 25°C, ID = 250 (cid:4)A −6.5 mV/°C Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 1 A 107 155 m(cid:5) VGS = 4.5 V, ID = 1 A 142 205 Forward Transconductance gFS VDS = 5.0 V, ID = 1 A 3 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss 182 pF Output Capacitance Coss VGS = V0D VS, =f =2 51 .V0 MHz, 25 Reverse Transfer Capacitance Crss 16 Total Gate Charge QG(TOT) VDS = 48 V, VGS = 4.5 V 2.8 nC ID = 1 A VGS = 10 V 5.1 Threshold Gate Charge QG(TH) 0.3 Gate−to−Source Charge QGS VDS = 48 V, ID = 1 A 0.8 Gate−to−Drain Charge QGD VGS = 10 V 1.5 Plateau Voltage VGP 3.1 V Gate Resistance RG 8 (cid:5) SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(on) 5 ns Rise Time tr VDS = 30 V, VGS = 10 V, 7 Turn−Off Delay Time td(off) ID = 1 A, RG = 10(cid:6)(cid:5) 13 Fall Time tf 2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.2 V IS = 1 A TJ = 125°C 0.6 Reverse Recovery Time trr 12 ns Charge Time ta IS = 1 Adc, VGS = 0 Vdc, 9 Discharge Time tb dIS/dt = 100 A/(cid:4)s 3 Reverse Recovery Stored Charge QRR 6 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width (cid:3) 300 (cid:4)s, Duty Cycle (cid:3) 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

NTR5198NL TYPICAL CHARACTERISTICS 15 15 1134 VGS = 10 V VGS = 6.0 V 1134 VDS = 5 V A) 12 VGS = 5.0 V A) 12 NT ( 1101 VGS = 4.5 V NT ( 1101 E E R 9 R 9 UR 8 UR 8 C 7 VGS = 3.0 V VGS = 4.0 V C 7 RAIN 56 VGS = 3.8 V RAIN 56 TJ = 25°C I, DD 234 VVVGGGSSS === 333...426 VVV I, DD 324 TJ = 150°C 1 1 TJ = −55°C 0 0 0 1 2 3 4 5 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:5)) (cid:5)) E ( 0.50 E ( 0.50 C C SISTAN 00..4405 ITDJ == 12 5A°C SISTAN 00..4450 TJ = 25°C VGS = 4.5 V E E R 0.35 R 0.35 E E RC 0.30 RC 0.30 U U O 0.25 O 0.25 S S − − TO 0.20 TO 0.20 VGS = 10 V − − N 0.15 N 0.15 AI AI R R D 0.10 D 0.10 , n)0.05 , n) 0.05 o o S( 3 4 5 6 7 8 9 10 S( 0 1 2 3 4 5 6 7 8 9 10 11 12 13 1415 D D R R VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and d) Voltage Gate Voltage E (Normalize 2111....0789 VIDG =S 1= A10 V N VOLTAGE 111...111025050 ID = 250 (cid:4)A C W N 1.6 O 1.075 TA 1.5 D S K 1.050 SI 1.4 EA RE 1.3 BR 1.025 RCE 11..12 ZED 1.000 OU 1.0 ALI 0.975 AIN−TO−S 0000....6789 , NORMSS000...999025050 R −50 −25 0 25 50 75 100 125 150 D −50 −25 0 25 50 75 100 125 150 D V , n) TJ, JUNCTION TEMPERATURE (°C) B TJ, JUNCTION TEMPERATURE (°C) o DS( Figure 5. On−Resistance Variation with Figure 6. Breakdown Voltage Variation with R Temperature Temperature www.onsemi.com 3

NTR5198NL TYPICAL CHARACTERISTICS E 1.20 10,000 G TA 1.15 ID = 250 (cid:4)A OL 1.10 TJ = 150°C V D 1.05 A) 1000 HOL 1.00 E (n TJ = 125°C S 0.95 G E A R 0.90 K 100 H A T 0.85 E ED 0.80 , LS TJ = 85°C Z S ALI 0.75 ID 10 M 0.70 R O 0.65 N , S(th)0.60−50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 30 35 40 45 50 55 60 VG TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Threshold Voltage Variation with Figure 8. Drain−to−Source Leakage Current Temperature vs. Voltage 227550 Tf =J =1 2M5H°Cz GE (V)1121 QT 5650GE (V) pF) 220205 CISS VGS = 0 V OLTA109 4550OLTA C, CAPACITANCE ( 1111570257050505 COSS GATE−TO−SOURCE V 3572468 QGS VDSQGD VGS VITDJD =S= 1=2 5A4°8C V 12312345550000DRAIN−TO−SOURCE V 250 CRSS V, GS 01 05 V, DS 0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 9. Capacitance Variation Figure 10. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 10 VDD = 30 V TJ = 150°C td(off) VIDG =S 1= A10 V T (A) TJ = 125°C s) 10 tr REN TJ = 100°C n R t, TIME ( 1 td(tofn) URCE CU 1 TJ = 85°C O S , S I TJ = 25°C TJ = −55°C 0.1 0.1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE ((cid:5)) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Resistive Switching Time Variation Figure 12. Diode Forward Voltage vs. Current vs. Gate Resistance www.onsemi.com 4

NTR5198NL TYPICAL CHARACTERISTICS 100 VGS ≤ 10 V Single Pulse A) TC = 25°C 10 (cid:4)S T ( 10 N E RR 100 (cid:4)S CU 1 1 mS N AI R 10 mS D I, D 0.1 RDS(on) Limit Thermal Limit Package Limit dc 0.01 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) W) C/ Figure 13. Maximum Rated Forward Biased °E ( Safe Operating Area S N O1000 P S E R L A M R 100 50% Duty Cycle E H T T 20% N SIE 10% R(cid:3)JA Steady State = 139°C/W N 10 5% A R E T 2% CTIV 1% Single Pulse E 1 F 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 F E R(t), Figure 14. Thermal Imtp, eTdIMaEn c(see c(J)unction−to−Ambient) www.onsemi.com 5

NTR5198NL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4.DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBOURT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 21: END VIEW PIN 1. GATE 2. SOURCE 3. DRAIN RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com NTR5198NL/D 6

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