NTMS4801N MOSFET – Power, N-Channel, SO-8 30 V, 12 A Features • Low R to Minimize Conduction Losses http://onsemi.com DS(on) • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX • This is a Pb−Free Device 9.0 m(cid:4) @ 10 V 30 V 12 A Applications 12.5 m(cid:4) @ 4.5 V • DC−DC Converters • Synchronous MOSFET N−Channel • Printers D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit G Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID 9.9 A S Current R(cid:2)JA (Note 1) TA = 70°C 7.9 MARKING DIAGRAM/ Power Dissipation R(cid:2)JA TA = 25°C PD 1.41 W PIN ASSIGNMENT (Note 1) 1 8 Continuous Drain TA = 25°C ID 7.5 A 1 Source Drain CPouwrreenr tD Ris(cid:2)sJiAp a(Ntioonte R 2(cid:2))JA SStetaatdey TTAA == 7205°°CC PD 60..08 W CSATSYSOLE−E 78 1521 SSooGuuarrccteee (cid:2)AYWW(cid:2)4801N DDDrrraaaiiinnn (Note 2) Top View Continuous Drain TA = 25°C ID 12 A Current R(cid:2)JA, t (cid:2) 10 s 4801N = Device Code (Note 1) TA = 70°C 9.6 A = Assembly Location P Ro(cid:2)wJAe,r tD (cid:2)is s1ip0a sti(oNnote 1) TA = 25°C PD 2.1 W YW(cid:2) W === PYWeboa−rrFk rWeee ePkackage Pulsed Drain Current TA = 25°C, tp = 10 (cid:3)s IDM 35 A (Note: Microdot may be in either location) Operating Junction and Storage Temperature TJ, −55 to °C Tstg 150 ORDERING INFORMATION Source Current (Body Diode) IS 2.1 A Device Package Shipping† Single Pulse Drain−to−Source Avalanche Energy EAS 98 mJ (TJ = 25°C, VDD = 30 V, VGS = 10 V, NTMS4801NR2G SO−8 2500/Tape & Reel IL = 14 Apk, L = 1.0 mH, RG = 25 (cid:4)) (Pb−Free) Lead Temperature for Soldering Purposes TL 260 °C †For information on tape and reel specifications, (1/8″ from case for 10 s) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: June, 2019 − Rev. 2 NTMS4801N/D

NTMS4801N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) R(cid:2)JA 88.5 °C/W Junction−to−Ambient – t (cid:2) 10 s (Note 1) R(cid:2)JA 60.5 Junction−to−Foot (Drain) R(cid:2)JF 23 Junction−to−Ambient – Steady State (Note 2) R(cid:2)JA 156 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 in sq pad size. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 (cid:3)A 30 V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 7.0 mV/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS TJ = 25°C 1.0 (cid:3)A VGS = 0 V, VDS = 24 V TJ = 85°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 (cid:3)A 1.0 2.5 V Negative Threshold Temperature VGS(TH)/TJ 6.0 mV/°C Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 12 A 7.0 9.0 m(cid:4) VGS = 4.5 V, ID = 10 A 9.5 12.5 Forward Transconductance gFS VDS = 1.5 V, ID = 12 A 26 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss 1630 2201 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 288 389 Reverse Transfer Capacitance Crss 150 225 Total Gate Charge QG(TOT) 12.2 14 nC Threshold Gate Charge QG(TH) 1.8 VGS = 4.5 V, VDS = 15 V, ID = 12 A Gate−to−Source Charge QGS 5.1 Gate−to−Drain Charge QGD 4.4 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 12 A 25 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) 10.5 ns Rise Time tr VGS = 10 V, VDS = 15 V, 3.7 Turn−Off Delay Time td(off) ID = 1.0 A, RG = 6.0 (cid:4) 29 Fall Time tf 9.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD TJ = 25°C 0.73 1.0 V VGS = 0 V, IS = 2.1 A TJ = 125°C 0.6 http://onsemi.com 2

NTMS4801N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR 22 ns Charge Time ta VGS = 0 V, dIS/dt = 100 A/(cid:3)s, 11 Discharge Time tb IS = 2.1 A 11 Reverse Recovery Charge QRR 13 nC PACKAGE PARASITIC VALUES Source Inductance LS 0.66 nH Drain Inductance LD TA = 25°C 0.20 nH Gate Inductance LG 1.5 nH Gate Resistance RG 1.1 1.8 (cid:4) 3. Pulse Test: pulse width = 300 (cid:3)s, duty cycle (cid:2) 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3

NTMS4801N TYPICAL PERFORMANCE CURVES 22 22 20 3.4 V to10V 3.2 V TJ = 25°C 20 VDS ≥ 10 V S) 18 S) 18 P P AM 16 AM 16 T ( 14 T ( 14 N N RE 12 3.0 V RE 12 R R U 10 U 10 C C N 8 N 8 DRAI 6 2.8 V DRAI 6 TJ = 100°C D, 4 D, 4 I 2 2.6 V I 2 TJ = 25°C TJ = −55°C 0 0 0 1 2 3 4 5 6 1.5 2 2.5 3 3.5 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:4)) (cid:4)) E ( 0.050 E ( 0.016 NC 0.045 TJ = 25°C NC TJ = 25°C STA 0.040 ID = 12 A STA 0.014 SI SI E 0.035 E R R 0.012 E 0.030 E VGS = 4.5 V C C R R U 0.025 U 0.01 O O S 0.020 S − − O O 0.008 T 0.015 T N− N− VGS = 10 V AI 0.010 AI 0.006 R R D 0.005 D on), 0 on), 0.004 S( 2 4 6 8 10 S( 2 4 6 8 10 12 14 16 18 20 22 D D R R VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and Voltage Gate Voltage 1.8 100000 VGS = 10 V VGS = 0 V ED) 1.6 ID = 12 A CE O−SOURRMALIZ 1.4 GE (nA) 10000 TJ = 150°C TO A −N 1.2 K DRAIN S(on),SISTANCE ( 1.0 I, LEADSS 1000 TJ = 125°C DE 0.8 RR 0.6 100 −50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature vs. Voltage http://onsemi.com 4

NTMS4801N TYPICAL PERFORMANCE CURVES 2500 10 20 TJ = 25°C OLTS) QT 18DSV E (pF) 2000 Ciss VGS = 0 V OLTAGE (V 8 VDS VGS 1164, DRAIN-TO C 1500 V 6 12- PACITAN 1000 -SOURCE 4 QGS QGD 810SOURCE V C, CA 500 Coss , GATE-TOS 2 ID = 12 A 462 OLTAGE (VO Crss VG TJ = 25°C LT 0 0 0 S ) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 DRAIN−TO−SOURCE VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 1000 4 VIDD =D 1= A15 V PS) VTJG =S =2 50° CV VGS = 10 V td(off) AM 3 100 T ( s) tf EN n R t, TIME ( 10 ttdr(on) CE CUR 2 R U O 1 S , S I 1 0 1 10 100 0.5 0.55 0.6 0.65 0.7 0.75 0.8 RG, GATE RESISTANCE (OHMS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current Variation vs. Gate Resistance 100 E 100 C UR ID = 14 A S) 10 (cid:3)s O RENT (AMP 10 110 0m (cid:3)ss RAIN−TO−SNERGY (mJ) 75 R 1 DE 50 DRAIN CU 0.1 VSTCGIN S=G =2L 52E°0 CP VULSE 10 ms E PULSE LANCHE 25 I, D RTHDSE(RonM) ALILM LITIMIT dc SINGLAVA 0.01 PACKAGE LIMIT AS, 0 0.1 1 10 100 E 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs. Safe Operating Area Starting Junction Temperature http://onsemi.com 5

NTMS4801N PACKAGE DIMENSIONS SOIC−8 CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER A ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 8 5 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. B S 0.25 (0.010) M Y M 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR 1 PROTRUSION SHALL BE 0.127 (0.005) TOTAL −Y− 4 K IMNA EXXIMCUEMSS M OAFT ETRHIEA LD CDOIMNEDNITSIOIONN. AT 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. G MILLIMETERS INCHES C NX 45(cid:3) DIM MIN MAX MIN MAX A 4.80 5.00 0.189 0.197 SEATING PLANE B 3.80 4.00 0.150 0.157 −Z− C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 0.10 (0.004) G 1.27 BSC 0.050 BSC H D M J H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 0.25 (0.010)M Z Y S X S M 0 (cid:3) 8 (cid:3) 0 (cid:3) 8 (cid:3) N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 SOLDERING FOOTPRINT* STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 1.52 5. DRAIN 0.060 6. DRAIN 7. DRAIN 8. DRAIN 7.0 4.0 0.275 0.155 0.6 1.270 0.024 0.050 (cid:3) (cid:4) mm SCALE 6:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com NTMS4801N/D 6