NTMFS4925N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features • Low R to Minimize Conduction Losses DS(on) http://onsemi.com • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives V(BR)DSS RDS(ON) MAX ID MAX • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 5.6 m(cid:4) @ 10 V 30 V 48 A Compliant 8.5 m(cid:4) @ 4.5 V Applications • D (5,6) CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) G (4) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V S (1,2,3) Continuous Drain TA = 25°C ID 16.7 A N−CHANNEL MOSFET C(Nuortree n1t) R(cid:2)JA TA = 100°C 10.5 MARKING Power Dissipation TA = 25°C PD 2.70 W DIAGRAM R(cid:2)JA (Note 1) D Continuous Drain TA = 25°C ID 25.2 A C(Nuortree n1t) R(cid:2)JA ≤ 10 s TA = 100°C 15.9 SO−8 FLAT1 LEAD SS A4Y9W25ZNZ D Power Dissipation TA = 25°C PD 6.16 W CASE 488AA S R(cid:2)JA ≤ 10 s (Note 1) Steady STYLE 1 G D D Continuous Drain State TA = 25°C ID 9.7 A C(Nuortree n2t) R(cid:2)JA TA = 100°C 6.2 A = Assembly Location Y = Year Power Dissipation TA = 25°C PD 0.92 W W = Work Week R(cid:2)JA (Note 2) ZZ = Lot Traceability Continuous Drain TC = 25°C ID 48 A C(Nuortree n1t) R(cid:2)JC TC =100°C 30 Power Dissipation TC = 25°C PD 23.2 W ORDERING INFORMATION R(cid:2)JC (Note 1) Pulsed Drain TA = 25°C, tp = 10 (cid:3)s, IDM 210 A Device Package Shipping† Current VGS = 10 V NTMFS4925NT1G SO−8 FL 1500 / Current Limited by Package TA = 25°C IDmax 100 A (Pb−Free) Tape & Reel Operating Junction and Storage TJ, −55 to °C Temperature TSTG +150 NTMFS4925NT3G SO−8 FL 5000 / (Pb−Free) Tape & Reel Source Current (Body Diode) IS 21 A †For information on tape and reel specifications, Drain to Source DV/DT dV/dt 6.0 V/ns including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2019− Rev. 6 NTMFS4925N/D

NTMFS4925N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Single Pulse Drain−to−Source Avalanche EAS 34 mJ Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V, IL = 26 Apk, L = 0.1 mH, RG = 25 (cid:4)) Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) R(cid:2)JC 5.4 Junction−to−Ambient – Steady State (Note 3) R(cid:2)JA 46.3 °C/W Junction−to−Ambient – Steady State (Note 4) R(cid:2)JA 136.2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) R(cid:2)JA 20.3 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 (cid:3)A 30 V Drain−to−Source Breakdown Voltage V(BR)DSSt VGS = 0 V, ID(aval) = 11.0 A, 34 V (transient) Tcase = 25°C, ttransient = 100 ns Drain−to−Source Breakdown Voltage V(BR)DSS/ 21 mV/°C Temperature Coefficient TJ Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0 VDS = 24 V TJ = 125°C 10 (cid:3)A Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 (cid:3)A 1.32 1.7 2.2 V Negative Threshold Temperature Coefficient VGS(TH)/TJ VGS = 0 V, VDS = 15 V 3.9 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 4.5 5.6 ID = 15 A 4.5 m(cid:4) VGS = 4.5 V ID = 30 A 6.8 8.5 ID = 15 A 6.7 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 52 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 1264 Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 483 pF Reverse Transfer Capacitance CRSS 143 Capacitance Ratio CRSS / VGS = 0 V, f = 1 MHz, VDS = 15 V 0.113 0.226 CISS 5. Pulse Test: pulse width (cid:2) 300 (cid:3)s, duty cycle (cid:2) 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2

NTMFS4925N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Total Gate Charge QG(TOT) 10.8 Threshold Gate Charge QG(TH) 2.0 VGS = 4.5 V, VDS = 15 V; ID = 30 A nC Gate−to−Source Charge QGS 3.8 Gate−to−Drain Charge QGD 4.2 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 21.5 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) 9.5 RTuisren −TOimff eDelay Time td(OtrFF) VGIDS == 145.5 A V, ,R VGD S= =3 .105 (cid:4) V, 3126..74 ns Fall Time tf 6.2 Turn−On Delay Time td(ON) 7.4 RTuisren −TOimff eDelay Time td(OtrFF) VIGDS = = 1 150 A V, ,R VGD S= =3 .105 (cid:4) V, 2270..53 ns Fall Time tf 4.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.86 1.1 V IS = 30 A TJ = 125°C 0.75 Reverse Recovery Time tRR 25.8 Charge Time ta VGS = 0 V, dIS/dt = 100 A/(cid:3)s, 12.4 ns Discharge Time tb IS = 30 A 13.4 Reverse Recovery Charge QRR 13.6 nC PACKAGE PARASITIC VALUES Source Inductance LS 1.00 nH Drain Inductance LD 0.005 nH TA = 25°C Gate Inductance LG 1.84 nH Gate Resistance RG 0.8 2.2 (cid:4) 5. Pulse Test: pulse width (cid:2) 300 (cid:3)s, duty cycle (cid:2) 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3

NTMFS4925N TYPICAL CHARACTERISTICS 120 120 110 10 V 4.5 V TJ = 25°C 4.0 V 110 TJ = −55°C 100 100 T (A) 90 T (A) 90 TJ = 25°C TJ = 125°C N 80 N 80 E 3.5 V E RR 70 RR 70 VDS = 10 V U 60 U 60 C C N 50 N 50 AI AI R 40 3.0 V R 40 D D , D 30 , D 30 I 20 I 20 10 VGS = 2.5 V 10 0 0 0 1 2 3 4 5 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:4)) (cid:4)) E (0.020 E ( 0.011 C C AN0.018 ID = 30 A AN 0.010 T = 25°C T T S0.016 S SI SI 0.009 RE0.014 RE CE 0.012 CE 0.008 VGS = 4.5 V R R OU0.010 OU 0.007 S S O−0.008 O− 0.006 −T0.006 −T N N 0.005 AI0.004 AI VGS = 10 V R R , DDS(on)0.00203 4 5 6 7 8 9 10, DDS(on)00..00003410 20 30 40 50 60 70 80 90 100 110 120 R R VGS (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. V Figure 4. On−Resistance vs. Drain Current and GS Gate Voltage 1.7 10,000 RCEZED)11..65 IVDG =S 3=0 1 A0 V TJ = 150°C RAIN−TO−SOUCE (NORMALI1111....1243 LEAKAGE (nA)1,000 TJ = 125°C , Dn)STAN01..90 , DSS 100 TJ = 85°C DS(oESI0.8 I RR 0.7 VGS = 0 V 0.6 10 −50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature vs. Voltage http://onsemi.com 4

NTMFS4925N TYPICAL CHARACTERISTICS 11460000 Ciss TVJG =S =2 50° CV AGE (V) 11019 QT pF)1200 OLT 8 CE (1000 E V 7 N C A R 6 CIT 800 Coss OU 5 APA 600 O−S 4 Qgs Qgd TJ = 25°C C, C 240000 Crss , GATE−TGS 213 VVIDGD =DS 3==0 11 A05 VV 0 V 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 22 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 30 VGS = 0 V VVGDDS == 1105 VV td(off) NT (A) 25 s) 100 ID = 15 A tf RE 20 n R E ( tr CU 15 TIM CE t, 10 td(on) OUR 10 I, SS 5 TJ = 125°C TJ = 25°C 1 0 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE ((cid:4)) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance 1000 40 0 V < VGS < 10 V −mJ) 36 ID = 26 A T (A) 100 STCin g=l e2 5P°uClse 10 (cid:3)s AIN−TOERGY ( 2382 N RN RE 10 100 (cid:3)s E DE E 24 R SH U LC 20 C 1 ms UN AIN 1 10 ms LE PALA 16 I, DRD 0.1 TRhDeSr(mona) lL Limimitit dc , SINGSRCE AV 128 Package Limit EAOU 4 0.01 S 0 0.01 0.1 1 10 100 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs. Safe Operating Area Starting Junction Temperature http://onsemi.com 5

NTMFS4925N TYPICAL CHARACTERISTICS 100 D = 0.5 0.2 10 0.1 0.05 W) 0.02 r(t)C/ 1 ° ( 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 6

NTMFS4925N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE G 2 X NOTES: 1. DIMENSIONING AND TOLERANCING PER 0.20 C ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE 2 B BURRS. 2 X D1 0.20 C MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 A1 0.00 −−− 0.05 E1 4 (cid:2)X bc 00..3233 00..4218 00..5313 E D 5.15 BSC 2 D1 4.50 4.90 5.10 c D2 3.50 −−− 4.22 A1 E 6.15 BSC E1 5.50 5.80 6.10 1 2 3 4 E2 3.45 −−− 4.30 e 1.27 BSC TOP VIEW G 0.51 0.61 0.71 C K 1.20 1.35 1.50 3 X e SEATING L 0.51 0.61 0.71 0.10 C PLANE L1 0.05 0.17 0.20 M 3.00 3.40 3.80 A DETAIL A (cid:2) 0 (cid:2) −−− 12 (cid:2) 0.10 C STYLE 1: PIN 1.SOURCE SIDE VIEW SOLDERING FOOTPRINT* 2.SOURCE DETAIL A 3.SOURCE 4.GATE 3X 4X 5.DRAIN 8X b 1.270 0.750 4X 0.10 C A B 1.000 0.05 c L e/2 1 4 0.965 K 1.330 2X 0.905 E2 2X PIN 5 M 0.495 4.530 (EXPOSED PAD) L1 3.200 0.475 G D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com NTMFS4925N/D 7

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