NTLJS3113P Power MOSFET −20 V, −7.7 A, Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P www.onsemi.com • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) • 2x2 mm Footprint Same as SC−88 Package 40 m(cid:3) @ −4.5 V • Lowest R Solution in 2x2 mm Package DS(on) 50 m(cid:3) @ −2.5 V • 1.5 V R Rating for Operation at Low Voltage Logic Level Gate −20 V −7.7 A DS(on) 75 m(cid:3) @ −1.8 V Drive • 200 m(cid:3) @ −1.5 V Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS S Compliant Applications G • DC−DC Converters (Buck and Boost Circuits) • Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc. • D High Side Load Switch P−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S MARKING D DIAGRAM Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V CAWSED F5N066AP 12 J8M(cid:2) 65 Gate−to−Source Voltage VGS ±8.0 V 3 (cid:2) 4 Pin 1 Continuous Drain Steady TA = 25°C ID −5.8 A J8 = Specific Device Code Current (Note 1) State TA = 85°C −4.4 M = Date Code t ≤5 s TA = 25°C −7.7 (cid:2) = Pb−Free Package (Note: Microdot may be in either location) Power Dissipation Steady PD 1.9 W (Note 1) State TA = 25°C PIN CONNECTIONS t ≤5 s 3.3 Continuous Drain TA = 25°C ID −3.5 A Current (Note 2) Steady TA = 85°C −2.5 D 1 6 D State P(Noowtee r2 D)issipation TA = 25°C PD 0.7 W D 2 D 5 D Pulsed Drain Current tp = 10 (cid:2)s IDM −23 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C G 3 S 4 S 150 Source Current (Body Diode) (Note 2) IS −2.8 A (Top View) Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping† assumed, damage may occur and reliability may be affected. NTLJS3113PT1G WDFN6 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 3000/Tape & Reel (Pb−Free) [2 oz] including traces). NTLJS3113PTAG 2. Surface Mounted on FR4 Board using the minimum recommended pad size, †For information on tape and reel specifications, (30 mm2, 2 oz Cu). including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 − Rev. 6 NTLJS3113P/D

NTLJS3113P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) R(cid:4)JA 65 Junction−to−Ambient – t ≤ 5 s (Note 3) R(cid:4)JA 38 °C/W Junction−to−Ambient – Steady State Min Pad (Note 4) R(cid:4)JA 180 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 (cid:2)A −20 V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ ID = −250 (cid:2)A, Ref to 25°C −10.1 mV/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS TJ = 25°C −1.0 (cid:2)A VDS = −16 V, VGS = 0 V TJ = 85°C −10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V ±1.0 (cid:2)A ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 (cid:2)A −0.45 −0.67 −1.0 V Negative Gate Threshold VGS(TH)/TJ 2.68 mV/°C Temperature Coefficient Drain−to−Source On−Resistance RDS(on) VGS = −4.5, ID = −3.0 A 32 40 m(cid:3) VGS = −2.5, ID = −3.0 A 44 50 VGS = −1.8, ID = −2.0 A 67 75 VGS = −1.5, ID = −1.8 A 90 200 Forward Transconductance gFS VDS = −16 V, ID = −3.0 A 5.9 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 1329 pF Output Capacitance COSS VGS =V 0D VS, = f −=1 16. 0V MHz, 213 Reverse Transfer Capacitance CRSS 120 Total Gate Charge QG(TOT) 13 15.7 nC Threshold Gate Charge QG(TH) VGS = −4.5 V, VDS = −16 V, 1.5 Gate−to−Source Charge QGS ID = −3.0 A 2.2 Gate−to−Drain Charge QGD 2.9 Gate Resistance RG 14.4 (cid:3) SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) 6.9 ns Rise Time tr VGS = −4.5 V, VDD = −10 V, 17.5 Turn−Off Delay Time td(OFF) ID = −3.0 A, RG = 3.0 (cid:3) 60 Fall Time tf 56.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD TJ = 25°C −0.78 −1.2 VGS = 0 V, IS = −1.0 A TJ = 125°C −0.67 V Reverse Recovery Time tRR 70.8 106 Charge Time ta VGS = 0 V, dISD/dt = 100 A/(cid:2)s, 14.3 ns Discharge Time tb IS = −1.0 A 56.4 Reverse Recovery Time QRR 44 nC 5. Pulse Test: Pulse Width (cid:2) 300 (cid:2)s, Duty Cycle (cid:2) 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

NTLJS3113P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 7 9 VGS = −1.7 V to −8 V TJ = 25°C −1.6 V VDS ≥ 10 V S) 6 S) 8 P P M M 7 T (A 5 −1.5 V T (A 6 N N RE 4 RE 5 R −1.4 V R U U C 3 C 4 N N AI −1.3 V AI 3 TJ = 25°C R 2 R , DD −1.2 V , DD 2 −I 1 −1.1 V −I 1 TJ = 125°C TJ = −55°C 0 0 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:3)) (cid:3)) CE ( 0.04 CE ( 0.08 AN VGS = −4.5 V AN TJ = 25°C ST ST 0.07 ESI TJ = 100°C ESI VGS = −1.8 V R R 0.06 E E C C R R 0.05 U U −SO 0.03 TJ = 25°C −SO 0.04 VGS = −2.5 V O O T T N− N− 0.03 RAI TJ = −55°C RAI VGS = −4.5 V D D 0.02 , DS(on) 0.021.0 1.5 2.0 2.5 3.0 , DS(on)0.011 2 3 4 5 6 7 R R −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Gate Voltage CE 1.5 100000 AN ID = −6 A VGS = 0 V ST VGS = −4.5 V SI RE 1.3 nA) 10000 TJ = 150°C OURCE ALIZED)1.1 AKAGE ( 1000 TO−SORM , LES TJ = 100°C −N S AIN(0.9 −ID 100 R D , n) o S( 0.7 10 RD −50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature versus Voltage www.onsemi.com 3

NTLJS3113P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 2800 5 20 VDS = VGS = 0 V TJ = 25°C TS) QT D-V CE (pF)22040000 Ciss OLTAGE (VOL 4 16S, DRAIN-TO AN1600 E V 3 VDS VGS 12-SO C, CAPACIT1842000000 Crss Coss , GATE-TO-SOURCGS21 QGS QGD ITDJ == −235.°0C A 48 URCE VOLTAGE (VOL 05 0 5 10 15 20 -V 00 4 8 12 0 TS) VGS VDS QG, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 7. Capacitance Variation 1000 3 VDD = −15 V VGS = 0 V IVDG =S −=3 −.04 .A5 V td(off) MPS) 2.5 A 100 tf T ( 2 ME (ns) tr URREN 1.5 t, TI 10 td(on) CE C 1 R OU TJ = 150°C S −I, s0.5 TJ = 25°C 1 0 1 10 100 0 0.2 0.4 0.6 0.8 1.0 RG, GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage versus Current Variation versus Gate Resistance 100 See Note 2, Page 1 S) SINGLE PULSE MP 10 TC = 25°C 100 (cid:2)s A T ( N 1 ms E R R 1 10 ms U C N AI R 0.1 D , D RDS(on) LIMIT −I THERMAL LIMIT dc PACKAGE LIMIT 0.01 0.1 1 10 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4

NTLJS3113P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) E C 1000 N A T S SI D = 0.5 E 100 R 0.2 L A 0.1 M R 0.05 E 10 H 0.02 P(pk) See Note 2 on Page 1 T T 0.01 D CURVES APPLY FOR POWER N E PULSE TRAIN SHOWN NSI 1 t1 READ TIME AT t1 RA t2 TJ(pk) − TA = P(pk) R(cid:4)JA(t) E T 0.1 SINGLE PULSE DUTY CYCLE, D = t1/t2 V TI 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 C E t, TIME (sec) F F E Figure 12. Thermal Response www.onsemi.com 5

NTLJS3113P PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. D A 2. CONTROLLING DIMENSION: MILLIMETERS. B 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. ÍÍÍ E 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. PIN ONE MILLIMETERS REFERENCEÍÍÍ DIM MIN MAX A 0.70 0.80 ÍÍÍ A1 0.00 0.05 2X 0.10 C A3 0.20 REF b 0.25 0.35 b1 0.51 0.61 D 2.00 BSC 2X 0.10 C D2 1.00 1.20 E 2.00 BSC E2 1.10 1.30 A3 e 0.65 BSC 0.10 C K 0.15 REF L 0.20 0.30 A L2 0.20 0.30 J 0.27 REF J1 0.65 REF 7X 0.08 C A1 C SEATING SOLDERING FOOTPRINT* PLANE D2 4X e 2.30 6XL L2 1 3 1.10 6X 6X b1 6X 0.43 0.35 0.10 C A B E2 0.05 C 1 0.60 1.25 NOTE 5 K 6 4 b 6X 0.35 J 0.10 C A B J1 0.05 C NOTE 3 0.34 BOTTOM VIEW 0.66 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com NTLJS3113P/D 6

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