NTGS3455T1 MOSFET −3.5 Amps, −30 Volts P−Channel TSOP−6 Features http://onsemi.com • Ultra Low R DS(on) • Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) TYP ID Max • Miniature TSOP−6 Surface Mount Package −30 V 100 m(cid:2) @ −10 V −3.5 A • Pb−Free Package is Available P−Channel 1 2 5 6 Applications DRAIN • Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards 3 GATE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit 4 Drain−to−Source Voltage VDSS −30 Volts SOURCE Gate−to−Source Voltage − Continuous VGS (cid:2)20.0 Volts MARKING DIAGRAM & Thermal Resistance Junction−to−Ambient (Note 1) RθJA 62.5 °C/W PIN ASSIGNMENT Total Power Dissipation @ TA = 25°C Pd 2.0 Watts Drain Drain Source −3.5 Amps Dra−−in PC Cuoulnsrtreiendnu Dtourasi n@ C TuArr e=n 2t 5(T°Cp (cid:3) 10 μS) IPDIDMd −12.00 AWmatptss 1 6455 5M(cid:2)4 Maximum Operating Power Dissipation ID −2.5 Amps (cid:2) Maximum Operating Drain Current TSOP−6 Thermal Resistance CASE 318G Junction−to−Ambient (Note 2) RθJA 128 °C/W STYLE 1 1 2 3 Total Power Dissipation @ TA = 25°C Pd 1.0 Watts Drain Drain Gate Drain Current −− PCuolnsteindu Dourasi n@ C TuArr e=n 2t 5(T°Cp (cid:3) 10 μS) IPDIDMd −−021.5.45 AAWmmatpptsss 4M55 == DSpaetec iCfico dDee*vice Code Maximum Operating Power Dissipation ID −1.75 Amps (cid:2) = Pb−Free Package Maximum Operating Drain Current (Note: Microdot may be in either location) Operating and Storage Temperature Range TJ, Tstg −55 to °C *Date Code orientation may vary depending 150 upon manufacturing location. Maximum Lead Temperature for Soldering TL 260 °C Purposes for 10 Seconds ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not Device Package Shipping† normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and NTGS3455T1 TSOP−6 3000 Tape & Reel reliability may be affected. 1. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single NTGS3455T1G TSOP−6 3000 Tape & Reel sided), t (cid:3) 5.0 seconds. (Pb−Free) 2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), operating to steady state. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: March, 2007 − Rev. 3 NTGS3455T1/D

NTGS3455T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 3 & 4) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = −10 μA) −30 − − Zero Gate Voltage Drain Current IDSS μAdc (VGS = 0 Vdc, VDS = −30 Vdc, TJ = 25°C) − − −1.0 (VGS = 0 Vdc, VDS = −30 Vdc, TJ = 70°C) − − −5.0 Gate−Body Leakage Current IGSS nAdc (VGS = −20.0 Vdc, VDS = 0 Vdc) − − −100 Gate−Body Leakage Current IGSS nAdc (VGS = +20.0 Vdc, VDS = 0 Vdc) − − 100 ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = −250 μAdc) −1.0 −1.87 −3.0 Static Drain−Source On−State Resistance RDS(on) (cid:2) (VGS = −10 Vdc, ID = −3.5 Adc) − 0.094 0.100 (VGS = −4.5 Vdc, ID = −2.7 Adc) − 0.144 0.170 Forward Transconductance gFS mhos (VDS = −15 Vdc, ID = −3.5 Adc) − 6.0 − DYNAMIC CHARACTERISTICS Total Gate Charge Qtot − 9.0 13 nC Gate−Source Charge (VDS = −1ID5 =V d−c3,. 5V GASd c=) −10 Vdc, Qgs − 2.5 − Gate−Drain Charge Qgd − 2.0 − Input Capacitance Ciss − 480 − pF Output Capacitance (VDS = −5f .=0 1V.d0c M, VHGzS) = 0 Vdc, Coss − 220 − Reverse Transfer Capacitance Crss − 60 − SWITCHING CHARACTERISTICS Turn−On Delay Time td(on) − 10 20 ns Rise Time (VDD = −20 Vdc, ID = −1.0 Adc, tr − 15 30 Turn−Off Delay Time VGS = −10 Vdc, Rg = 6.0 (cid:2)) td(off) − 20 35 Fall Time tf − 10 20 Reverse Recovery Time (IS = −1.7 Adc, dlS/dt = 100 A/μs) trr − 30 − ns BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = −1.7 Adc, VGS = 0 Vdc) VSD − −0.90 −1.2 Vdc Diode Forward On−Voltage (IS = −3.5 Adc, VGS = 0 Vdc) VSD − −1.0 − Vdc 3. Indicates Pulse Test: P.W. = 300 μsec max, Duty Cycle = 2%. 4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2

NTGS3455T1 20 20 VGS = −10 V MPS) 16 VGS = −9 V VGS = −6 V MPS) 1168 TJ = −55°C A VGS = −8 V A ENT ( 12 VGS = −7 V VGS = −5 V ENT ( 1142 TJ = 25°C TJ = 125°C R R R R 10 U U C C N 8 VGS = −4 V N 8 AI AI 6 R R D D −I D, 4 TJ = 25°C VGS = −3 V −I D, 42 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics )Ω )Ω E ( 0.3 E ( 0.3 C C N N TJ = 25°C TA0.25 ID = −3.5 A TA0.25 SIS TJ = 25°C SIS E E E R 0.2 E R 0.2 VGS = −4.5 V C C R R U0.15 U0.15 O O −S −S VGS = −10 V TO 0.1 TO 0.1 − − N N RAI0.05 RAI0.05 D D S(on), 02 3 4 5 6 7 8 9 10 S(on), 00 2 4 6 8 10 12 14 16 18 20 D D R R −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and Voltage Gate Voltage D) E Z LI A 1.6 700 M OR ID = −3.5 A VGS = 0 V N VGS = −10 V TJ = 25°C CE ( 1.4 F) 500 SISTAN 1.2 ANCE (p Ciss E T 300 R CI CE 1 PA Coss R A U C O C, 100 S 0.8 O− Crss T − N RAI 0.−650 −25 0 25 50 75 100 125 150 −1000 5 10 15 20 25 30 D n), TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) o S( Figure 5. On−Resistance Variation with Figure 6. Capacitance Variation D R Temperature http://onsemi.com 3

NTGS3455T1 12 10 E AG 11 S) VGS = 0 V E VOLT 190 QT T (AMP 8 C 8 N URS) 7 RE 6 TJ = 150°C OT R TE−TO−S(VOL 456 Qgs Qgd URCE CU 4 TJ = 25°C A 3 O V GGS, 21 TIDJ == −235.°5C A −I, SS 2 − 0 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Qg, TOTAL GATE CHARGE (nC) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Figure 8. Diode Forward Voltage vs. Current Drain−to−Source Voltage vs. Total Charge T 1 N E Duty Cycle = 0.5 SI N AE RC TN 0.2 E A VD TIPE 0.1 CM EFFEMAL I0.1 0.05 D R EE LIZTH 0.02 A M R 0.01 Single Pulse O N 0.01 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 SQUARE WAVE PULSE DURATION (sec) Figure 9. Normalized Thermal Transient Impedance, Junction−to−Ambient 20 16 W) R (12 E W O P 8 4 0 0.01 0.10 1.00 10.00 100.00 TIME (sec) Figure 10. Single Pulse Power http://onsemi.com 4

NTGS3455T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD 6 5 4 THICKNESS IS THE MINIMUM THICKNESS OF HE E BASE MATERIAL. 1 2 3 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. b MILLIMETERS INCHES e DIM MIN NOM MAX MIN NOM MAX A 0.90 1.00 1.10 0.035 0.039 0.043 A1 0.01 0.06 0.10 0.001 0.002 0.004 (cid:2) b 0.25 0.38 0.50 0.010 0.014 0.020 c c 0.10 0.18 0.26 0.004 0.007 0.010 0.05 (0.002) A D 2.90 3.00 3.10 0.114 0.118 0.122 E 1.30 1.50 1.70 0.051 0.059 0.067 e 0.85 0.95 1.05 0.034 0.037 0.041 L A1 L 0.20 0.40 0.60 0.008 0.016 0.024 HE 2.50 2.75 3.00 0.099 0.108 0.118 (cid:2) 0° − 10° 0° − 10° STYLE 1: PIN 1.DRAIN 2.DRAIN 3.GATE 4.SOURCE 5.DRAIN 6.DRAIN SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.075 0.95 0.037 0.7 0.028 1.0 (cid:4) (cid:5) 0.039 mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com NTGS3455T1/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: NTGS3455T1G