NTGS3446 Power MOSFET 20 V, 5.1 A Single N−Channel, TSOP6 Features • Ultra Low R • DS(on) http://onsemi.com Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Diode Exhibits High Speed, Soft Recovery V(BR)DSS RDS(on) TYP ID MAX • Avalanche Energy Specified 20 V 36 m(cid:4) @ 4.5 V 5.1 A • I Specified at Elevated Temperature DSS • Pb−Free Package is Available N−Channel Applications • Drain 1 256 Power Management in portable and battery−powered products, i.e. computers, printers, PCMCIA cards, cellular and cordless • Lithium Ion Battery Applications • Notebook PC Gate 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Source 4 Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V MARKING DIAGRAM Thermal Resistance Junction−to−Ambient (Note 1) R(cid:3)JA 244 °C/W Total Power Dissipation @ TA = 25°C Pd 0.5 W TSOP−6 Drain Current CASE 318G 446W −− PCuolnsteindu Dourasi n@ C TuArr e=n 2t 5(t°pC (cid:2) 10 (cid:2)s) IDIDM 21.05 AA 1 STYLE 1 1 Thermal Resistance Junction−to−Ambient (Note 2) R(cid:3)JA 128 °C/W 446 = Device Code Total Power Dissipation @ TA = 25°C Pd 1.0 W W = Work Week Drain Current − Continuous @ TA = 25°C ID 3.6 A − Pulsed Drain Current (tp (cid:2) 10 (cid:2)s) IDM 14 A PIN ASSIGNMENT Thermal Resistance Drain Drain Source Junction−to−Ambient (Note 3) R(cid:3)JA 62.5 °C/W 6 5 4 Total Power Dissipation @ TA = 25°C Pd 2.0 W Drain Current − Continuous @ TA = 25°C ID 5.1 A − Pulsed Drain Current (tp (cid:2) 10 (cid:2)s) IDM 20 A Source Current (Body Diode) IS 5.1 A 1 2 3 Operating and Storage Temperature Range TJ, Tstg −55 to °C Drain DrainGate 150 Maximum Lead Temperature for Soldering TL 260 °C Purposes for 10 seconds ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Device Package Shipping† Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are NTGS3446T1 TSOP−6 3000/Tape & Reel exceeded, device functional operation is not implied, damage may occur and TSOP−6 reliability may be affected. NTGS3446T1G 3000/Tape & Reel (Pb−Free) 1. Minimum FR−4 or G−10PCB, operating to steady state. 2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick †For information on tape and reel specifications, single−sided), operating to steady state. including part orientation and tape sizes, please 3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick refer to our Tape and Reel Packaging Specification single−sided), t < 5.0 seconds. Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: January, 2006 − Rev. 5 NTGS3446/D

NTGS3446 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 0.25 mAdc) 20 − − Temperature Coefficient (Positive) − 22 − mV/°C Zero Gate Voltage Collector Current IDSS (cid:2)Adc (VDS = 20 Vdc, VGS = 0 Vdc) − − 1.0 (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C) − − 25 Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0) IGSS(f) − − 100 nAdc IGSS(r) − − −100 ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) Vdc ID = 0.25 mA, VDS = VGS 0.6 0.85 1.2 Temperature Coefficient (Negative) − −2.5 − mV/°C Static Drain−to−Source On−Resistance RDS(on) m(cid:4) (VGS = 4.5 Vdc, ID = 5.1 Adc) − 36 45 (VGS = 2.5 Vdc, ID = 4.4 Adc) − 44 55 Forward Transconductance (VDS = 10 Vdc, ID = 5.1 Adc) gFS − 12 − mhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss − 510 750 pF Output Capacitance (VDS = 1f0 = V 1d.c0, MVHGSz )= 0 Vdc, Coss − 200 350 Transfer Capacitance Crss − 60 100 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(on) − 9.0 16 ns Rise Time (VDD = 10 Vdc, ID = 1.0 Adc, tr − 12 20 Turn−Off Delay Time VGS = 4.5 Vdc, RG = 6.0 (cid:4)) td(off) − 35 60 Fall Time tf − 20 35 Gate Charge QT − 8.0 15 nC (VDS =V 1G0S V =d c4,. 5ID V =d c5).1 Adc, Qgs − 2.0 − Qgd − 2.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 4) VSD Vdc (IS = 1.7 Adc, VGS = 0 Vdc) − 0.74 1.1 (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85°C) − 0.66 − Reverse Recovery Time trr − 20 − ns ta − 11 − (IS = 1.7 Adc, VGS = 0 Vdc, diS/dt = 100 A/(cid:2)s) tb − 9.0 − Reverse Recovery Stored QRR − 0.01 − (cid:2)C Charge 4. Pulse Test: Pulse Width ≤300 (cid:2)s, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2

NTGS3446 14 14 VGS = 2.6 V VGS = 2.2 V TJ = 25°C VDS (cid:3) 10 V 12 12 A) A) T ( 10 VGS = 5 V T ( 10 N N RE VGS = 10 V VGS = 2 V RE R 8 R 8 U U C C N 6 N 6 RAI VGS = 1.8 V RAI D 4 D 4 , D , D I 2 VGS = 1.6 V I 2 TJ = 125°C TJ = 25°C VGS = 1.4 V TJ = −55°C 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:4)) (cid:4)) NCE ( 0.11 ID = 3.3 A NCE ( 0.06 TJ = 25°C STA TJ = 25°C STA 0.05 ESI0.085 ESI VGS = 2.5 V R R E E 0.04 C C R 0.06 R VGS = 5.5 V U U O O S S 0.03 − − O O T T −0.035 − N N 0.02 AI AI R R D D , n) 0.01 , n) 0.01 o o S( 1 2 3 4 5 6 S( 2 3 4 5 6 7 8 9 10 D D R R VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current Gate−To−Source Voltage and Gate Voltage E 1.6 1000 C N ID = 3.25 A TA VGS = 4.5 V TJ = 150°C SIS 1.4 VGS = 0 V E A) R n OURCE ALIZED)1.2 AKAGE ( 100 TO−SORM 1 , LES −N S N( D AI 0.8 I DR TJ = 100°C , n) o 0.6 10 S( D −50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 R TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature versus Voltage http://onsemi.com 3

NTGS3446 1400 5 15 1200 CissVDS = 0 V VGS = 0 V TJ = 25°C GE (V) QT TAGE A 4 12 L CE (pF)1000 E VOLT 3 −VDS −VGS 9 RCE VO N 800 C U APACITA 600 Crss Ciss O−SOUR 2 Qgs Qgd TIDJ == 52.51° CA 6 −TO−SO C 400 T N C, E− AI T 1 3 R 2000 CrsCsoss V, GAGS 0 0 V, DDS −10 −5.0 0 5.0 10 15 20 0 1 2 3 4 5 6 7 8 VGS VDS Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−to−Source and Drain−to−Source Figure 7. Capacitance Variation Voltage versus Total Charge 1000 VDS = 10 V 6 VGS = 0 V VIGDS = = 5 4.1.5 A V T (A) 5 TJ = 25°C 100 N E s) R 4 t, TIME (n 10 Vr VfVd(off) Vd(on) RCE CUR 3 U 2 O S , S 1 I 1 0 1 10 100 0.2 0.4 0.6 0.8 1 RG, GATE RESISTANCE ((cid:4)) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus versus Gate Resistance Current http://onsemi.com 4

NTGS3446 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER A ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. L 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS 6 5 4 OF BASE MATERIAL. S B 4. DIMENSIONS A AND B DO NOT INCLUDE 1 2 3 MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES D DIM MIN MAX MIN MAX A 2.90 3.10 0.1142 0.1220 G B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 M D 0.25 0.50 0.0098 0.0197 J G 0.85 1.05 0.0335 0.0413 0.05 (0.002) C H 0.013 0.100 0.0005 0.0040 J 0.10 0.26 0.0040 0.0102 K K 0.20 0.60 0.0079 0.0236 H L 1.25 1.55 0.0493 0.0610 M 0 (cid:2) 10 (cid:2) 0 (cid:2) 10 (cid:2) S 2.50 3.00 0.0985 0.1181 STYLE 1: PIN 1.DRAIN 2.DRAIN 3.GATE 4.SOURCE 5.DRAIN 6.DRAIN SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.075 0.95 0.037 0.7 0.028 1.0 (cid:4) (cid:5) 0.039 mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com NTGS3446/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: NTGS3446T1G