NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • www.onsemi.com Low R for Higher Efficiency and Longer Battery Life DS(on) • Small Outline Package (1.6 x 1.6 mm) • SC−75 Standard Gullwing Package V(BR)DSS RDS(on) TYP ID MAX • ESD Protected Gate 0.26 (cid:4) @ −4.5 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS −20 V 0.35 (cid:4) @ −2.5 V −760 mA Compliant 0.49 (cid:4) @ −1.8 V Applications • High Side Load Switch P−Channel MOSFET • DC−DC Conversion D • Small Drive Circuits • Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units G Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6.0 V S Continuous Drain Current Steady State ID −760 mA (Note 1) MARKING DIAGRAM Power Dissipation (Note 1) PD mW & PIN ASSIGNMENT SC−75 Steady State 301 SC−89 313 3 Pulsed Drain Current tp =10 (cid:2)s IDM ±1000 mA 2 Operating Junction and Storage Temperature TJ, −55 to °C 1 3 TSTG 150 SC−75 / SOT−416 Drain CASE 463 Continuous Source Current (Body Diode) IS −250 mA STYLE 5 xx M (cid:2) Lead Temperature for Soldering Purposes TL 260 °C (cid:2) (1/8 in from case for 10 s) 3 Gate−to−Source ESD Rating − ESD 1800 V 1 2 (Human Body Model, Method 3015) 1 2 Gate Source THERMAL RESISTANCE RATINGS SC−89 CASE 463C Junction−to−Ambient − Steady State (Note 1) R(cid:3)JA °C/W SC−75 415 SC−89 400 xx = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be (cid:2) = Pb−Free Package assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq (Note: Microdot may be in either location) [1 oz] including traces). *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2014 − Rev. 8 NTA4151P/D

NTA4151P, NTE4151P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 (cid:2)A −20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V −1.0 −100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V (cid:2)1.0 (cid:2)10 (cid:2)A ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS = VGS, ID = −250 (cid:2)A −0.45 −1.2 V Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −350 mA 0.26 0.36 (cid:4) VGS = −2.5 V, ID = −300 mA 0.35 0.45 VGS = −1.8 V, ID = −150 mA 0.49 1.0 Forward Transconductance gFS VDS = −10 V, ID = −250 mA 0.4 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, 156 pF VDS = −5.0 V Output Capacitance COSS 28 Reverse Transfer Capacitance CRSS 18 Total Gate Charge QG(TOT) VGS = −4.5 V, VDD = −10 V, 2.1 nC ID = −0.3 A Threshold Gate Charge QG(TH) 0.125 Gate−to−Source Charge QGS 0.325 Gate−to−Drain Charge QGD 0.5 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −10 V, 8.0 ns ID = −200 mA, RG = 10 (cid:4) Rise Time tr 8.2 Turn−Off Delay Time td(OFF) 29 Fall Time tf 20.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −250 mA −0.72 −1.1 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 (cid:2)s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Marking Package Shipping† NTA4151PT1G TN SC−75 3000 / Tape & Reel (Pb−Free) NTE4151PT1G TM SC−89 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS 0.7 0.6 TJ = 25°C VDS (cid:3) −10 V MPS) 0.6 −1.5 V MPS) 0.5 NT (A 0.5 VGS = −1.75 V to −4.5 V NT (A 0.4 RE 0.4 RE R R 0.3 CU 0.3 −1.25 V CU DRAIN 0.2 DRAIN 0.2 TJ = 125°C TJ = 25°C −I D, 0.1 −1.0 V −I D, 0.1 TJ = −55°C 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.4 0.8 1.2 1.6 2.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:4)) (cid:4)) E ( 0.6 E ( 0.6 NC VGS = −4.5 V NC VGS = −2.5 V A A ST 0.5 ST 0.5 TJ = 125°C SI SI E E E R 0.4 TJ = 125°C E R 0.4 TJ = 25°C C C R R OU 0.3 TJ = 25°C OU 0.3 TJ = −55°C S S O− 0.2 TJ = −55°C O− 0.2 T T − − N N AI 0.1 AI 0.1 R R D D on), 0 on), 0 DS( 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 DS( 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 R R −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and Temperature Temperature 1.6 250 ID = − 0.35 A TJ = 25°C ED) VGS = −4.5 V SOURCMALIZE1.4 E (pF) 200 CISS −TO−NOR1.2 TANC 150 DRAIN S(on),SISTANCE (01..80 C, CAPACI 15000 COSS DE RR CRSS 0.6 0 −50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Figure 6. Capacitance Variation Temperature www.onsemi.com 3

NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS S) T 5 0.7 L VO QT S) VGS = 0 V GE ( 4 AMP 0.6 OLTA NT ( 0.5 E V 3 RRE 0.4 C U OUR 2 QGS QGD E C 0.3 O−S URC 0.2 TJ = 125°C −T 1 VDS = −10 V SO GATE ITDA == −205.°3C A −I, S 0.1 TJ = 25°C S,0 0 VG 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.2 0.4 0.6 0.8 1.0 − QG, TOTAL GATE CHARGE (nC) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source Voltage vs. Total Figure 8. Diode Forward Voltage vs. Current Gate Charge E C AN 1.0 T S D = 0.5 SI E R L 0.2 A M 0.1 R 0.1 E H 0.05 T T N E 0.02 SI N A TR 0.01 0.01 D E Z ALI SINGLE PULSE M R O N 0.001 r(t), 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) Figure 9. Normalized Thermal Response www.onsemi.com 4

NTA4151P, NTE4151P PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 MILLIMETERS INCHES 3 e −D− DIM MIN NOM MAX MIN NOM MAX A 0.70 0.80 0.90 0.027 0.031 0.035 1 b3 PL A1 0.00 0.05 0.10 0.000 0.002 0.004 b 0.15 0.20 0.30 0.006 0.008 0.012 0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010 HE 0.20 (0.008) E D 1.55 1.60 1.65 0.059 0.063 0.067 E 0.70 0.80 0.90 0.027 0.031 0.035 e 1.00 BSC 0.04 BSC L 0.10 0.15 0.20 0.004 0.006 0.008 HE 1.50 1.60 1.70 0.061 0.063 0.065 C A STYLE 5: PIN 1.GATE 2.SOURCE 3.DRAIN L A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.787 0.071 0.031 0.508 0.020 1.000 0.039 (cid:4) (cid:5) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5

NTA4151P, NTE4151P PACKAGE DIMENSIONS SC−89, 3−LEAD CASE 463C−03 ISSUE C A −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM 3 THICKNESS OF BASE MATERIAL. 1 2 B −Y− S 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. K MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX G A 1.50 1.60 1.70 0.059 0.063 0.067 B 0.75 0.85 0.95 0.030 0.034 0.040 2 PL D 3 PL C 0.60 0.70 0.80 0.024 0.028 0.031 D 0.23 0.28 0.33 0.009 0.011 0.013 0.08 (0.003) M X Y G 0.50 BSC 0.020 BSC H 0.53 REF 0.021 REF J 0.10 0.15 0.20 0.004 0.006 0.008 K 0.30 0.40 0.50 0.012 0.016 0.020 M N L 1.10 REF 0.043 REF J M −−− −−− 10 _ −−− −−− 10 _ C N −−− −−− 10 _ −−− −−− 10 _ S 1.50 1.60 1.70 0.059 0.063 0.067 −T− SEATING PLANE SOLDERING FOOTPRINT* H H L G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com NTA4151P/D 6

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