NSS12100XV6T1G 12 V, 1 A, Low V CE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) http://onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management 12 VOLTS, 1.0 AMPS in portable and battery powered products such as cellular and cordless PNP LOW V TRANSISTOR CE(sat) phones, PDAs, computers, printers, digital cameras and MP3 players. EQUIVALENT R 300 m(cid:2) Other applications are low voltage motor controls in mass storage DS(on) products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument COLLECTOR cluster. The high current gain allows e2PowerEdge devices to be 1, 2, 5, 6 driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 3 BASE Features 4 • High Current Capability (1 A) EMITTER • High Power Handling (Up to 650 mW) • Low V (150 mV Typical @ 500 mA) CE(s) • Small Size • This is a Pb−Free Device 1 Benefits SOT−563 CASE 463A • High Specific Current and Power Capability Reduces Required PCB Area STYLE 4 • Reduced Parasitic Losses Increases Battery Life DEVICE MARKING MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit VE M(cid:2) (cid:2) Collector-Emitter Voltage VCEO −12 Vdc 1 Collector-Base Voltage VCBO −12 Vdc VE = Specific Device Code Emitter-Base Voltage VEBO −5.0 Vdc M = Month Code Collector Current − Continuous IC −1.0 Adc (cid:2) = Pb−Free Package Collector Current − Peak ICM −2.0 (Note: Microdot may be in either location) Electrostatic Discharge ESD HBM Class 3 MM Class C ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Device Package Shipping† Recommended Operating Conditions may affect device reliability. NSS12100XV6T1G SOT−563 4000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: November, 2006 − Rev. 0 NSS12100XV6/D

NSS12100XV6T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD (Note 1) 500 mW TA = 25°C Derate above 25°C 4.0 mW/°C Thermal Resistance, R(cid:2)JA (Note 1) 250 °C/W Junction−to−Ambient Total Device Dissipation PD (Note 2) 650 mW TA = 25°C Derate above 25°C 5.2 mW/°C Thermal Resistance, R(cid:2)JA (Note 2) 192 °C/W Junction−to−Ambient Thermal Resistance, R(cid:2)JL 105 °C/W Junction−to−Lead 6 Total Device Dissipation PD Single 1.0 W (Single Pulse < 10 sec.) Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) V(BR)CEO −12 − − Vdc Collector−Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V(BR)CBO −12 − − Vdc Emitter−Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) ICBO − −0.02 −0.1 (cid:3)Adc Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) IEBO − −0.03 −0.1 (cid:3)Adc ON CHARACTERISTICS DC Current Gain (Note 3) hFE (IC = −10 mA, VCE = −2.0 V) 200 − − (IC = −500 mA, VCE = −2.0 V) 100 − − (IC = −1.0 A, VCE = −2.0 V) 90 − − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) V (IC = −0.05 A, IB = −0.005 A) (Note 4) − −0.030 −0.040 (IC = −0.1 A, IB = −0.002 A) − −0.080 −0.100 (IC = −0.1 A, IB = −0.010 A) − −0.050 −0.060 (IC = −0.5 A, IB = −0.050 A) − −0.200 −0.225 (IC = −1.0 A, IB = −0.100 A) − −0.400 −0.440 Base−Emitter Saturation Voltage (Note 3) VBE(sat) V (IC = −1.0 A, IB = −0.01 A) − 0.95 −1.15 Base−Emitter Turn−on Voltage (Note 3) VBE(on) V (IC = −2.0 A, VCE = −3.0 V) − −1.05 −1.15 Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 50 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 20 pF 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Pulsed Condition: Pulse Width = 300 (cid:3)sec, Duty Cycle ≤ 2%. 4. Guaranteed by design but not tested. http://onsemi.com 2

NSS12100XV6T1G 1.0 3.0 R 0.9 IC/IB = 10 VCE(sat) = 150°C R IC/IB = 100 VCE(sat) = −55°C 25°C MITTEE (V)0.8 25°C MITTEE (V)2.5 OR EOLTAG00..76 −55°C OR EOLTAG2.0 150°C ECTN V0.5 ECTN V1.5 LO LO OLTI0.4 OLTI , Cat)TURA0.3 , Cat)TURA1.0 E(sSA0.2 E(sSA0.5 C C V 0.1 V 0 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. Collector Emitter Saturation Voltage vs. Collector Current Collector Current 600 1.4 150°C (5.0 V) IC/IB = 10 1.2 AIN 500 150°C (2.0 V) ERE (V) G TG 1.0 NT 400 25°C (5.0 V) MITTA TA = −55°C E EOL 0.8 URR 300 25°C (2.0 V) ASE N V C BO 0.6 25°C , DC FE200 −−5555°°CC ((52..00 VV)) , BE(sat)TURATI 0.4 150°C h VA 100 S 0.2 0 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs. Current Collector Current V) GE ( 1.4 V) 1.0 LTA VCE = −1.0 V GE ( 10 mA 100 mA 300 mA IC = 500 mA O 1.2 A N V OLT 0.8 O 1.0 V URN− 0.8 TA = −55°C TTER 0.6 R T EMI E 0.6 − T 25°C R 0.4 MIT TO E 0.4 C SE 150°C LLE 0.2 A 0.2 O B C , E(on) 00.001 0.01 0.1 1 10 V, CE 00.01 0.1 1 10 100 B V IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Figure 6. Saturation Region Collector Current http://onsemi.com 3

NSS12100XV6T1G 50 30 F) F) p p E ( 45 E ( 25 NC NC Cobo(pF) TA 40 TA 20 CI Cibo(pF) CI A A AP 35 AP 15 C C T T PU 30 PU 10 N T C, Iibo 25 , OUbo 5 o C 20 0 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance http://onsemi.com 4

NSS12100XV6T1G PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI −X− Y14.5M, 1982. L 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS 6 5 4 IS THE MINIMUM THICKNESS OF BASE MATERIAL. E −Y− HE MILLIMETERS INCHES 1 2 3 DIM MIN NOM MAX MIN NOM MAX A 0.50 0.55 0.60 0.020 0.021 0.023 b 0.17 0.22 0.27 0.007 0.009 0.011 b 65 PL C C 0.08 0.12 0.18 0.003 0.005 0.007 e 0.08 (0.003)M X Y DE 11..5100 11..6200 11..7300 00..005493 00..006427 00..006561 e 0.5 BSC 0.02 BSC L 0.10 0.20 0.30 0.004 0.008 0.012 HE 1.50 1.60 1.70 0.059 0.062 0.066 STYLE 4: PIN 1.COLLECTOR 2.COLLECTOR 3.BASE 4.EMITTER 5.COLLECTOR 6.COLLECTOR SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 1.35 0.0394 0.0531 0.5 0.5 0.0197 0.0197 (cid:2) (cid:3) mm SCALE 20:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com NSS12100XV63/D 5