NSQA6V8AW5T2 Series ESD Protection Diode Single Line CAN/LIN Bus Protector This integrated surge protection device (surge protection) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its integrated design provides very effective and www.onsemi.com reliable protection for four separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 5 Features • Low Clamping Voltage • 2 Small SC−88A SMT Package • Stand Off Voltage: 5 V 3 4 • Low Leakage Current < 1 (cid:2)A • Four Separate Unidirectional Configurations for Protection • ESD Protection: IEC61000−4−2: Level 4 MILSTD 883C − Method 3015−6: Class 3 • Pb−Free Packages are Available Benefits SC−88A/SOT−353 • Provides Protection for ESD Industry Standards: IEC 61000, HBM CASE 419A−02 • Minimize Power Consumption of the System • Minimize PCB Board Space MARKING DIAGRAM Typical Applications • 4 5 Instrumentation Equipment • 6x M(cid:2) Serial and Parallel Ports (cid:2) • Microprocessor Based Equipment • 1 2 3 Notebooks, Desktops, Servers • Cellular and Portable Equipment x = H for NSQA6V8AW5T2 X for NSQA12VAW5T2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) M = Date Code Rating Symbol Value Unit (cid:2) = Pb−Free Package Peak Power Dissipation PPK 20 W (Note: Microdot may be in either location) 8 (cid:2) 20 (cid:2)sec Double Exponential Waveform (Note 1) Steady State Power − 1 Diode (Note 2) PD 380 mW Thermal Resistance − R(cid:3)JA ORDERING INFORMATION Junction−to−Ambient 327 °C/W Above 25°C, Derate 3.05 mW/°C Device Package Shipping† Operating Junction Temperature TJ −40 to +125 °C NSQA6V8AW5T2 SC−88A 3000/Tape & Reel Range Storage Temperature Range Tstg −55 to +150 °C NSQA6V8AW5T2G SC−88A 3000/Tape & Reel Lead Solder Temperature − Maximum TL 260 °C (Pb−Free) 10 Seconds Duration NSQA12VAW5T2 SC−88A 3000/Tape & Reel IEC ^1000−4−2 (ESD) Contact (cid:3)8.0 kV Stresses exceeding those listed in the Maximum Ratings table may damage the NSQA12VAW5T2G SC−88A 3000/Tape & Reel device. If any of these limits are exceeded, device functionality should not be (Pb−Free) assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 6. †For information on tape and reel specifications, 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. including part orientation and tape sizes, please Mounted on FR4 board with min pad. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2017 − Rev. 6 NSQA6V8AW5T2/D

NSQA6V8AW5T2 Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IF Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage VC VBRVRWM V IR VF IR Maximum Reverse Leakage Current @ VRWM IT VBR Breakdown Voltage @ IT IT Test Current IF Forward Current IPP VF Forward Voltage @ IF Ppk Peak Power Dissipation Uni−Directional C Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit NSQA6V8AW5T2 Breakdown Voltage (IT = 1 mA) (Note 3) VBR 6.4 6.8 7.1 V Leakage Current (VRWM = 5.0 V) IR − − 1.0 (cid:2)A Clamping Voltage 1 (IPP = 1.6 A) (Note 4) VC − − 13 V Maximum Peak Pulse Current (Note 4) IPP − − 1.6 A Junction Capacitance− (VR = 0 V, f = 1 MHz) CJ − 12 15 pF − (VR = 3.0 V, f = 1 MHz) − 6.7 9.5 Clamping Voltage − Per IEC61000−4−2 VC Figures 1 and 2 V NSQA12VAW5T2 Breakdown Voltage (IT = 5 mA) (Note 3) VBR 11.4 12.0 12.7 V Leakage Current (VRWM = 9.0 V) IR − − 0.05 (cid:2)A Zener Impedence (IT = 5 mA) ZZ − − 30 (cid:4) Clamping Voltage 1 (IPP = 0.9 A) (Note 4) VC − − 23 V Maximum Peak Pulse Current (Note 4) IPP − − 0.9 A Junction Capacitance− (VR = 0 V, f = 1 MHz) CJ − − 15 pF Clamping Voltage − Per IEC61000−4−2 (Note 5) VC Figures 1 and 2 V 3. VBR is measured at pulse test current IT. 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. www.onsemi.com 2

NSQA6V8AW5T2 Series Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 3

NSQA6V8AW5T2 Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak First Peak Test Volt- Current Current at Current at 100% Level age (kV) (A) 30 ns (A) 60 ns (A) 90% 1 2 7.5 4 2 2 4 15 8 4 I @ 30 ns 3 6 22.5 12 6 4 8 30 16 8 I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Device Under ESD Gun Oscilloscope Test 50 (cid:2) 50 (cid:2) Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note systems such as cell phones or laptop computers it is not AND8308/D − Interpretation of Datasheet Parameters clearly defined in the spec how to specify a clamping voltage for ESD Devices. at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD ESD Voltage Clamping protection diode over the time domain of an ESD pulse in the For sensitive circuit elements it is important to limit the form of an oscilloscope screenshot, which can be found on voltage that an IC will be exposed to during an ESD event the datasheets for all ESD protection diodes. For more to as low a voltage as possible. The ESD clamping voltage information on how ON Semiconductor creates these is the voltage drop across the ESD protection diode during screenshots and how to interpret them please refer to an ESD event per the IEC61000−4−2 waveform. Since the AND8307/D. IEC61000−4−2 was written as a pass/fail spec for larger 100 tr PEAK VALUE IRSM @ 8 (cid:2)s T 90 N E 80 PULSE WIDTH (tP) IS DEFINED R AS THAT POINT WHERE THE R U 70 PEAK CURRENT DECAY = 8 (cid:2)s C E 60 ULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s P K 40 A E P 30 F tP O 20 % 10 0 0 20 40 60 80 t, TIME ((cid:2)s) Figure 5. 8 x 20 (cid:2)s Pulse Waveform www.onsemi.com 4

NSQA6V8AW5T2 Series 100 110 100 W) P R ( R IP 90 E O 80 W R O E 70 P W E O 60 G 10 P UR D 50 K S ATE 40 A R PE OF 30 , pk % 20 P 10 1 0 1 10 100 1000 0 25 50 75 100 125 150 t, TIME ((cid:2)s) TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Width Figure 7. Power Derating Curve 0.16 14 (cid:2)GE (A) 00..1124 NCE (pF)NCY1120 TA = 25°C KA 0.10 TAUE EA CIQ 8 ERSE L 00..0068 L CAPAHz FRE 6 6 V REV 0.04 PICA1 M 4 12 V I, R0.02 TY 2 0 0 −60 −40 −20 0 20 40 60 80 100 0 1 2 3 4 5 6 T, TEMPERATURE (°C) BIAS VOLTAGE (V) Figure 8. Reverse Leakage versus Figure 9. Capacitance Temperature 1 A) T ( N E 0.1 R R U C D R A W0.01 R O F , F I TA = 25°C 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF, FORWARD VOLTAGE (V) Figure 10. Forward Voltage www.onsemi.com 5

NSQA6V8AW5T2 Series PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING G PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE 5 4 MOLD FLASH, PROTRUSIONS, OR GATE BURRS. S −B− INCHES MILLIMETERS 1 2 3 DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 D 5 PL 0.2 (0.008) M B M G 0.026 BSC 0.65 BSC H --- 0.004 --- 0.10 J 0.004 0.010 0.10 0.25 N K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 J C SOLDER FOOTPRINT 0.50 0.0197 K H 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 (cid:4) (cid:5) 0.0748 mm SCALE 20:1 inches ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com NSQA6V8AW5T2/D 6

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