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  • 型号: NLV27WZ14DFT2G
  • 制造商: ON Semiconductor
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NLV27WZ14DFT2G产品简介:

ICGOO电子元器件商城为您提供NLV27WZ14DFT2G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NLV27WZ14DFT2G价格参考。ON SemiconductorNLV27WZ14DFT2G封装/规格:逻辑 - 栅极和逆变器, 反相器 IC 2 Channel 施密特触发器 SC-88/SC70-6/SOT-363。您可以下载NLV27WZ14DFT2G参考资料、Datasheet数据手册功能说明书,资料中有NLV27WZ14DFT2G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC INVERTER DUAL SCHMITT SOT363变换器 LOG CMOS DUAL BUFFER

产品分类

逻辑 - 栅极和逆变器

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

逻辑集成电路,变换器,ON Semiconductor NLV27WZ14DFT2G27WZ

数据手册

产品型号

NLV27WZ14DFT2G

不同V、最大CL时的最大传播延迟

4.9ns @ 5V,50pF

产品种类

变换器

供应商器件封装

SC-88/SC70-6/SOT-363

包装

带卷 (TR)

商标

ON Semiconductor

安装类型

表面贴装

封装

Reel

封装/外壳

6-TSSOP,SC-88,SOT-363

工作温度

-55°C ~ 125°C

工厂包装数量

3000

标准包装

3,000

特性

施密特触发器

电压-电源

1.65 V ~ 5.5 V

电流-输出高,低

32mA,32mA

电流-静态(最大值)

1µA

电路数

2

系列

NL27WZ14

输入数

2

逻辑电平-低

0.4 V ~ 1.2 V

逻辑电平-高

1.8 V ~ 3.6 V

逻辑类型

反相器

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PDF Datasheet 数据手册内容提取

NL27WZ14 Dual Schmitt-Trigger Inverter The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Features www.onsemi.com • Designed for 1.65 V to 5.5 V V Operation CC • MARKING 2.3 ns tPD at VCC = 5 V (Typ) • DIAGRAMS Inputs/Outputs Overvoltage Tolerant up to 5.5 V • 6 IOFF Supports Partial Power Down Protection • SC−88 Sink 32 mA at 4.5 V DF SUFFIX XXXM(cid:2) • Available in SC−88, SC−74, TSOP−6 and UDFN6 Packages 1 CASE 419B−02 (cid:2) • Chip Complexity < 100 FETs 1 • NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 6 SC−74 XXX M(cid:2) Qualified and PPAP Capable CASE 318F−05 (cid:2) • 1 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 Compliant TSOP−6 XXX M(cid:2) IN A1 1 OUT Y1 CASE 318G−02 (cid:2) 1 IN A2 1 OUT Y2 1 UDFN6 Figure 1. Logic Symbol 1.45x1.0, 0.5P XM 1 CASE 517AQ UDFN6 1x1, 0.35P X M CASE 517BX 1 X, XXX = Specific Device Code M = Date Code* (cid:2) = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 − Rev. 15 NL27WZ14/D

NL27WZ14 A1 Y1 1 6 IN A1 1 6 OUT Y1 GND 2 5 VCC GND 2 5 VCC IN A2 3 4 OUT Y2 A2 3 4 Y2 (SC−88/SC−74/TSOP−6) UDFN6 Figure 2. Pinout (Top View) PIN ASSIGNMENT FUNCTION TABLE Pin Function A Input Y Output 1 A1 L H 2 GND H L 3 A2 4 Y2 5 VCC 6 Y1 www.onsemi.com 2

NL27WZ14 MAXIMUM RATINGS Symbol Characteristics Value Units VCC DC Supply Voltage SC−88 (NLV) −0.5 to +7.0 V SC−88, SC−74, TSOP−6, UDFN6 −0.5 to +6.5 VIN DC Input Voltage SC−88 (NLV) −0.5 to +7.0 V SC−88, SC−74, TSOP−6, UDFN6 −0.5 to +6.5 VOUT DC Output Voltage Active−Mode (High or Low State) −0.5 to VCC +0.5 V SC−88 (NLV) Tri−State Mode (Note 1) −0.5 to +7.0 Power−Down Mode (VCC = 0 V) −0.5 to +7.0 DC Output Voltage Active−Mode (High or Low State) −0.5 to VCC +0.5 V SC−88, SC−74, TSOP−6, UDFN6 Tri−State Mode (Note 1) −0.5 to +6.5 Power−Down Mode (VCC = 0 V) −0.5 to +6.5 IIK DC Input Diode Current, VIN < GND −50 mA IOK DC Output Diode Current, VOUT < GND ±50 mA IOUT DC Output Source/Sink Current ±50 mA ICC or IGND DC Supply Current per Supply Pin or Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 secs 260 °C TJ Junction Temperature under Bias +150 °C (cid:2)JA Thermal Resistance (Note 2) SC−88 659 °C/W SC−74 555 UDFN6 382 PD Power Dissipation in Still Air SC−88 190 mW SC−74 225 UDFN6 327 MSL Moisture Sensitivity Level 1 − FR Flamebility Rating Oxygen Index: 28 to 34 UL 94−V−0 @ 0.125 in − VESD ESD Withstand Voltage (Note 3) Human Body Model 2000 V Charged Device Model 1000 (NLV) Charged Device Model N/A ILATCHUP Latchup Performance (Note 4) ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Applicable to devices with outputs that may be tri−stated. 2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A. 4. Tested to EIA/JESD78 Class II. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage 1.65 5.5 V VIN DC Input Voltage 0 5.5 V VOUT DC Output Voltage Active−Mode (High or Low State) 0 VCC V Tri−State Mode (Note 1) 0 5.5 Power−Down Mode (VCC = 0 V) 0 5.5 TA Operating Temperature Range −55 +125 °C tr , tf Input Transition Rise or Fall Rate VCC = 1.65 V to 1.95 V No Limit ns VCC = 2.3 V to 2.7 V 0 No Limit VCC = 3.0 V to 3.6 V 0 No Limit VCC = 4.5 V to 5.5 V 0 No Limit Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3

NL27WZ14 DC ELECTRICAL CHARACTERISTICS TA = 25°C −40°C (cid:2) TA (cid:2) 85°C −55°C (cid:2) TA (cid:2) 125°C Symbol Parameter Condition VCC (V) Min Typ Max Min Max Min Max Unit VT+ Positive Input 1.65 − 1.0 1.4 − 1.4 − 1.4 V Threshold 2.3 − 1.5 1.8 − 1.8 − 1.8 Voltage 2.7 − 1.7 2 − 2 − 2 3 − 1.9 2.2 − 2.2 − 2.2 4.5 − 2.7 3.1 − 3.1 − 3.1 5.5 − 3.3 3.6 − 3.6 − 3.6 VT− Negative 1.65 0.2 0.5 − 0.2 − 0.2 − V Input 2.3 0.4 0.75 − 0.4 − 0.4 − Threshold Voltage 2.7 0.5 0.87 − 0.5 − 0.5 − 3 0.6 1.0 − 0.6 − 0.6 − 4.5 1.0 1.5 − 1.0 − 1.0 − 5.5 1.2 1.9 − 1.2 − 1.2 − VH Input 1.65 0.1 0.48 0.9 0.1 0.9 0.1 0.9 V Hysteresis 2.3 0.25 0.75 1.1 0.25 1.1 0.25 1.1 Voltage 2.7 0.3 0.83 1.15 0.3 1.15 0.3 1.15 3 0.4 0.93 1.2 0.4 1.2 0.4 1.2 4.5 0.6 1.2 1.5 0.6 1.5 0.6 1.5 5.5 0.7 1.4 1.7 0.7 1.7 0.7 1.7 VOH High−Level IOH = −100 (cid:3)A 1.65 to 5.5 VCC − 0.1 VCC − VCC − 0.1 − VCC − 0.1 − V Output Voltage IOH = −4 mA 1.65 1.29 1.52 − 1.29 − 1.29 − VIN = VIH or IOH = −8 mA 2.3 1.9 2.1 − 1.9 − 1.8 − VIL IOH = −12 mA 2.7 2.2 2.4 − 2.2 − 2.1 − IOH = −16 mA 3 2.4 2.7 − 2.4 − 2.3 − IOH = −24 mA 3 2.3 2.5 − 2.3 − 2.2 − IOH = −32 mA 4.5 3.8 4 − 3.8 − 3.7 − VOL Low−Level IOL = 100 (cid:3)A 1.65 to 5.5 − 0.1 − 0.1 − 0.1 V Output Voltage IOL = 4 mA 1.65 − 0.08 0.24 − 0.24 − 0.24 VIN = VIH or IOL = 8 mA 2.3 − 0.2 0.3 − 0.3 − 0.4 VIL IOL = 12 mA 2.7 − 0.22 0.4 − 0.4 − 0.5 IOL = 16 mA 3 − 0.28 0.4 − 0.4 − 0.5 IOL = 24 mA 3 − 0.38 0.55 − 0.55 − 0.55 IOL = 32 mA 4.5 − 0.42 0.55 − 0.55 − 0.65 IIN Input Leakage VIN = 5.5 V or 1.65 to 5.5 − − ±0.1 − ±1.0 − ±1.0 (cid:3)A Current GND IOFF Power Off VIN = 5.5 V or 0 − − 1 − 10 − 10 (cid:3)A Leakage VOUT = 5.5 V Current ICC Quiescent VIN = 5.5 V or 5.5 − − 1 − 10 − 10 (cid:3)A Supply GND Current www.onsemi.com 4

NL27WZ14 ÎÎAC ÎELEÎÎCTÎRICÎAL ÎCHAÎÎRAÎCTEÎRISÎTICÎÎS (IÎnputÎ tR =ÎÎ tF=Î 3.0 Îns) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTAÎÎ = 2ÎÎÎ5°CÎÎÎÎÎÎÎÎ−40°ÎÎC (cid:2) ÎÎÎTA (cid:2)ÎÎ 85°ÎÎÎÎC ÎÎ−55°ÎÎC (cid:2) ÎÎÎTA (cid:2)ÎÎ 125ÎÎΰC ÎÎ ÎÎSymÎbolÎÎÎPaÎrameÎterÎÎÎCoÎnditÎionÎÎÎVCCÎ (V)ÎÎÎMinÎÎÎTypÎÎÎMaxÎÎÎMiÎn ÎÎÎMaxÎÎÎMÎin ÎÎÎMaxÎÎÎUnÎit tPLH Propagation RL = 1 M(cid:4), 1.65 to 1.95 − 7.1 13 − 14.5 − 15.5 ns tPHL Delay CL = 15 pF (Figures 3 and 4) RL = 1 M(cid:4), 2.3 to 2.7 − 4.3 7.4 − 8.1 − 9.1 CL = 15 pF 3.0 to 3.6 − 3.3 5 − 5.5 − 6.5 4.5 to 5.5 − 2.7 4.1 − 4.5 − 5.5 RL = 500 (cid:4), 3.0 to 3.6 − 4 6 − 6.6 − 7.6 CL = 50 pF 4.5 to 5.5 − 3.2 4.9 − 5.4 − 6.4 CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 2.5 pF COUT Output Capacitance VCC = 5.5 V, VI = 0 V or VCC 4.0 pF CPD Power Dissipation Capacitance (Note 5) 10 MHz, VCC = 3.3 V, VIN = 0 V or VCC 11 pF 10 MHz, VCC = 5.0 V, VIN = 0 V or VCC 12.5 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD · VCC · fin ) ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD · VCC2 · fin ) ICC · VCC. www.onsemi.com 5

NL27WZ14 OPEN Switch 2 x VCC GND Test Position CL, pF RL, (cid:2) R1, (cid:2) tPLH / tPHL Open See AC Characteristics Table R1 tPLZ / tPZL 2 x VCC − − − DUT OUTPUT See AC Characteristics Table RT RL CL* tPHZ / tPZH GND − − − See AC Characteristics Table X = Don’t Care CL includes probe and jig capacitance RT is ZOUT of pulse generator (typically 50 (cid:4)) f = 1 MHz Figure 3. Test Circuit tr = 3 ns tf = 3 ns VCC 90% 90% VCC INPUT Vmi Vmi INPUT Vmi Vmi GND 10% 10% GND tPZL tPLZ tPHL tPLH ~VCC VOH OUTPUT Vmo Vmo OUTPUT Vmo VOL + VY VOL VOL tPLH tPHL tPZH tPHZ VOH VOH VOH − VY OUTPUT Vmo Vmo OUTPUT Vmo VOL ~0 V Figure 4. Switching Waveforms Vmo, V VCC, V Vmi, V tPLH, tPHL tPZL, tPLZ, tPZH, tPHZ VY, V 1.65 to 1.95 VCC/2 (VOH − VOL) / 2 VCC / 2 0.15 2.3 to 2.7 VCC/2 (VOH − VOL) / 2 VCC / 2 0.15 3.0 to 3.6 VCC/2 (VOH − VOL) / 2 VCC / 2 0.3 4.5 to 5.5 VCC/2 (VOH − VOL) / 2 VCC / 2 0.3 www.onsemi.com 6

NL27WZ14 ORDERING INFORMATION Pin1 Orientation Device Package Specific Device Code (See bellow) Shipping† NL27WZ14DFT2G SC−88 MA Q4 3000 / Tape & Reel NLV27WZ14DFT2G* SC−88 MA Q4 3000 / Tape & Reel NL27WZ14DTT1G TSOP−6 MA Q4 3000 / Tape & Reel NL27WZ14DBVT1G SC−74 MA Q4 3000 / Tape & Reel (In Development) NL27WZ14MU1TCG UDFN6, 1.45 x 1.0 x 0.35P TBD Q4 3000 / Tape & Reel (In Development) NL27WZ14MU3TCG UDFN6, 1.0 x 1.0 x 0.35P TBD Q4 3000 / Tape & Reel (In Development) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. Pin 1 Orientation in Tape and Reel www.onsemi.com 7

NL27WZ14 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H N1O.TDEISM:ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, D PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU- GAGE PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF 6 5 4 THE PLASTIC BODY AND DATUM H. L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H. E E1 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE DETAIL A LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 1 2 3 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN aaa C EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI- 2X TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER bbb H D 2X 3 TIPS RADIUS OF THE FOOT. e MILLIMETERS INCHES B 6X b DIM MIN NOM MAX MIN NOM MAX A −−− −−− 1.10 −−− −−− 0.043 ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004 TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 0.010 C 0.08 0.15 0.22 0.003 0.006 0.009 A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086 A E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 BSC 0.026 BSC L 0.26 0.36 0.46 0.010 0.014 0.018 L2 0.15 BSC 0.006 BSC aaa 0.15 0.006 bbb 0.30 0.012 6X ccc C ccc 0.10 0.004 A1 C SEATING c ddd 0.10 0.004 PLANE SIDE VIEW END VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8

NL27WZ14 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM 6 5 4 THICKNESS OF BASE MATERIAL. HE E 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. 1 2 3 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.90 1.00 1.10 0.035 0.039 0.043 b A1 0.01 0.06 0.10 0.001 0.002 0.004 e b 0.25 0.37 0.50 0.010 0.015 0.020 c 0.10 0.18 0.26 0.004 0.007 0.010 D 2.90 3.00 3.10 0.114 0.118 0.122 (cid:3) E 1.30 1.50 1.70 0.051 0.059 0.067 c e 0.08°5 0.95 11.005° 0.003°4 0.037 0.1004°1 0.05 (0.002) A HLE 02..2500 02..4705 03..6000 00..000989 00..011068 00..011284 (cid:3) − − L A1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 1.9 0.037 0.074 0.95 0.7 0.037 0.028 1.0 (cid:2) mm (cid:3) SCALE 10:1 0.039 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6: PIN 1.CATHODE PIN 1.NO CONNECTION PIN 1.EMITTER 1 PIN 1.COLLECTOR 2 PIN 1.CHANNEL 1 PIN 1.CATHODE 2.ANODE 2.COLLECTOR 2.BASE 1 2.EMITTER 1/EMITTER 2 2.ANODE 2.ANODE 3.CATHODE 3.EMITTER 3.COLLECTOR 2 3.COLLECTOR 1 3.CHANNEL 2 3.CATHODE 4.CATHODE 4.NO CONNECTION 4.EMITTER 2 4.EMITTER 3 4.CHANNEL 3 4.CATHODE 5.ANODE 5.COLLECTOR 5.BASE 2 5.BASE 1/BASE 2/COLLECTOR 3 5.CATHODE 5.CATHODE 6.CATHODE 6.BASE 6.COLLECTOR 1 6.BASE 3 6.CHANNEL 4 6.CATHODE STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11: PIN 1.SOURCE 1 PIN 1.EMITTER 1 PIN 1.EMITTER 2 PIN 1.ANODE/CATHODE PIN 1.EMITTER 2.GATE 1 2.BASE 2 2.BASE 2 2.BASE 2.BASE 3.DRAIN 2 3.COLLECTOR 2 3.COLLECTOR 1 3.EMITTER 3.ANODE/CATHODE 4.SOURCE 2 4.EMITTER 2 4.EMITTER 1 4.COLLECTOR 4.ANODE 5.GATE 2 5.BASE 1 5.BASE 1 5.ANODE 5.CATHODE 6.DRAIN 1 6.COLLECTOR 1 6.COLLECTOR 2 6.CATHODE 6.COLLECTOR www.onsemi.com 9

NL27WZ14 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. H 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. É6 É5 4 L2 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, GAUGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR E1 E PLANE GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D ÉÉ AND E1 ARE DETERMINED AT DATUM H. 1 2 3 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. L NOTE 5 b M C PSLEAANTIENG DIM MIN MILLNIMOEMTERSMAX DETAIL Z A 0.90 1.00 1.10 e A1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 c D 2.90 3.00 3.10 0.05 A EE1 21..5300 21..7550 31..0700 e 0.85 0.95 1.05 A1 L 0.20 0.40 0.60 DETAIL Z LM2 0° 0.25− BSC 10° STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6: PIN 1.DRAIN PIN 1.EMITTER 2 PIN 1.ENABLE PIN 1.N/C PIN 1.EMITTER 2 PIN 1.COLLECTOR 2.DRAIN 2.BASE 1 2.N/C 2.V in 2.BASE 2 2.COLLECTOR 3.GATE 3.COLLECTOR 1 3.R BOOST 3.NOT USED 3.COLLECTOR 1 3.BASE 4.SOURCE 4.EMITTER 1 4.Vz 4.GROUND 4.EMITTER 1 4.EMITTER 5.DRAIN 5.BASE 2 5.V in 5.ENABLE 5.BASE 1 5.COLLECTOR 6.DRAIN 6.COLLECTOR 2 6.V out 6.LOAD 6.COLLECTOR 2 6.COLLECTOR STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11: STYLE 12: PIN 1.COLLECTOR PIN 1.Vbus PIN 1.LOW VOLTAGE GATE PIN 1.D(OUT)+ PIN 1.SOURCE 1 PIN 1.I/O 2.COLLECTOR 2.D(in) 2.DRAIN 2.GND 2.DRAIN 2 2.GROUND 3.BASE 3.D(in)+ 3.SOURCE 3.D(OUT)− 3.DRAIN 2 3.I/O 4.N/C 4.D(out)+ 4.DRAIN 4.D(IN)− 4.SOURCE 2 4.I/O 5.COLLECTOR 5.D(out) 5.DRAIN 5.VBUS 5.GATE 1 5.VCC 6.EMITTER 6.GND 6.HIGH VOLTAGE GATE 6.D(IN)+ 6.DRAIN 1/GATE 2 6.I/O STYLE 13: STYLE 14: STYLE 15: STYLE 16: STYLE 17: PIN 1.GATE 1 PIN 1.ANODE PIN 1.ANODE PIN 1.ANODE/CATHODE PIN 1.EMITTER 2.SOURCE 2 2.SOURCE 2.SOURCE 2.BASE 2.BASE 3.GATE 2 3.GATE 3.GATE 3.EMITTER 3.ANODE/CATHODE 4.DRAIN 2 4.CATHODE/DRAIN 4.DRAIN 4.COLLECTOR 4.ANODE 5.SOURCE 1 5.CATHODE/DRAIN 5.N/C 5.ANODE 5.CATHODE 6.DRAIN 1 6.CATHODE/DRAIN 6.CATHODE 6.CATHODE 6.COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 3.20 6X 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 10

NL27WZ14 PACKAGE DIMENSIONS UDFN6, 1.45x1.0, 0.5P CASE 517AQ ISSUE O D A L L NOTES: B 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. L1 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND ÉÉÉ DETAIL A 0.30 mm FROM THE TERMINAL TIP. PIN ONE E OPTIONAL REFERENCE ÉÉÉ CONSTRUCTIONS MILLIMETERS DIM MIN MAX ÉÉÉ A 0.45 0.55 0.10 C A1 0.00 0.05 EXPOSED Cu MOLD CMPD A2 0.07 REF TOP VIEW ÉÉ b 0.20 0.30 0.10 C D 1.45 BSC ÉÉ E 1.00 BSC DETAIL B e 0.50 BSC DETAIL B L 0.30 0.40 0.05 C OPTIONAL L1 −−− 0.15 A CONSTRUCTIONS 6X 0.05 C A1 SIDE VIEW A2 C SPELAATNIENG e 6XL 1 3 DETAIL A 6 4 6Xb 0.10 C A B BOTTOM VIEW 0.05 C NOTE 3 MOUNTING FOOTPRINT 6X 0.30 PACKAGE OUTLINE 1.24 6X 1 0.53 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11

NL27WZ14 PACKAGE DIMENSIONS UDFN6, 1x1, 0.35P CASE 517BX ISSUE O D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED ÉÉÉ PIN ONE TERMINAL AND IS MEASURED BETWEEN REFERENCE E 0.15 AND 0.20 MM FROM TERMINAL TIP. ÉÉÉ 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. 2X 0.10 CÉÉÉ MILLIMETERS DIM MIN MAX 2X 0.10 C A 0.45 0.55 TOP VIEW A1 0.00 0.05 A3 0.13 REF b 0.12 0.22 0.05 C A3 D 1.00 BSC E 1.00 BSC A e 0.35 BSC L 0.25 0.35 L1 0.30 0.40 0.05 C SIDE VIEW A1 C SEATING RECOMMENDED PLANE SOLDERING FOOTPRINT* 5X e 0.48 6X 5XL 0.22 1 3 L1 1.18 6 4 6Xb 1 0.35 0.53 0.10 M C A B PKG PITCH OUTLINE BOTTOM VIEW 0.05 M C NOTE 3 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com NL27WZ14/D 12

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