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NJU7700F25-TE1产品简介:
ICGOO电子元器件商城为您提供NJU7700F25-TE1由NJR设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供NJU7700F25-TE1价格参考以及NJRNJU7700F25-TE1封装/规格参数等产品信息。 你可以下载NJU7700F25-TE1参考资料、Datasheet数据手册功能说明书, 资料中有NJU7700F25-TE1详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC) |
描述 | IC VOLT DETECT N-CH 2.5V SOT23-5 |
产品分类 | |
品牌 | NJR |
数据手册 | |
产品图片 | |
产品型号 | NJU7700F25-TE1 |
rohs | 含铅 / 不符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
产品目录页面 | |
供应商器件封装 | SOT-23-5(MTP5) |
其它名称 | NJU7700F25-TE1CT |
包装 | 剪切带 (CT) |
受监控电压数 | 1 |
复位 | 低有效 |
复位超时 | - |
安装类型 | 表面贴装 |
封装/外壳 | SC-74A,SOT-753 |
工作温度 | -40°C ~ 85°C |
标准包装 | 1 |
电压-阈值 | 2.5V |
类型 | 简单复位/加电复位 |
输出 | 开路漏极或开路集电极 |
NJU7700/01 VOLTAGE DETECTOR (cid:132) GENERAL DESCRIPTION (cid:132) PACKAGE OUTLINE The NJU7700/01 is a high precision and low quiescent current voltage detector. The detection voltage is internally fixed with an accuracy of 1.0%. The NJU7700/01 are useful for preventing malfunction of NJU7700/01F NJU7700/01F4 microcomputer or DSP etc. through detect a drop in voltage of battery or power supply. NJU7700 is Nch. Open Drain and NJU7701 is a C-MOS output type. Small packaging makes NJU7700 and NJU7701 suitable for space conscious applications. (cid:132) FEATURES (cid:122) High Precision Detection Voltage ±1.0% (cid:122) Low Quiescent Current 0.8µA typ. (V =3V version) DET (cid:122) Detection Voltage Range 1.3∼6.0V(0.1V Step) (cid:122) Output Configuration NJU7700: Nch. Open Drain type NJU7701: C-MOS Output type (cid:122) CMOS Technology (cid:122) Package Outline SOT-23-5 : NJU7700/01F SC-82AB : NJU7700/01F4 (cid:132) PIN CONFIGURATION 5 4 1. VOUT 4 3 1. VOUT 2. V 2. V DD DD 3. V 3. NC SS 4. NC 4. V SS 5. NC 1 2 3 1 2 NJU7700/01F NJU7700/01F4 (cid:132) EQUIVALENT CIRCUIT VDD VDD VOUT VOUT VREF VREF V V SS SS NJU7700 NJU7701 Ver.2006-02-23 -1-
NJU7700/01 (cid:132) DETECTION VOLTAGE RANK LIST Device Name V Device Name V Device Name V Device Name V DET DET DET DET NJU770*F4-/F13 1.3V NJU770*F4-/F23 2.3V NJU770*F4-/F32 3.2V NJU770*F4-/F43 4.3V NJU770*F4-/F15 1.5V NJU770*F4-/F24 2.4V NJU770*F4-/F33 3.3V NJU770*F4-/F44 4.4V NJU770*F4-/F16 1.6V NJU770*F4-/F25 2.5V NJU770*F4-/F34 3.4V NJU770*F4-/F45 4.5V NJU770*F4-/F17 1.7V NJU770*F4-/F26 2.6V NJU770*F4-/F35 3.5V NJU770*F4-/F47 4.7V NJU770*F4-/F18 1.8V NJU770*F4-/F27 2.7V NJU770*F4-/F36 3.6V NJU770*F4-/F05 5.0V NJU770*F4-/F19 1.9V NJU770*F4-/F28 2.8V NJU770*F4-/F38 3.8V NJU770*F4-/F52 5.2V NJU770*F4-/F02 2.0V NJU770*F4-/F29 2.9V NJU770*F4-/F39 3.9V NJU770*F4-/F55 5.5V NJU770*F4-/F21 2.1V NJU770*F4-/F03 3.0V NJU770*F4-/F04 4.0V NJU770*F4-/F06 6.0V NJU770*F4-/F22 2.2V NJU770*F4-/F31 3.1V NJU770*F4-/F42 4.2V (cid:132) NJU7700 (cid:132) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Input Voltage V +10 V DD Output Voltage V V -0.3∼+10 V OUT SS Output Current I 50 mA OUT F : SOT-23-5 200(*1) Power Dissipation P mW D F4 : SC-82AB 250(*2) Operating Temperature Topr −40 ∼ +85 °C Storage Temperature Tstg −40 ∼ +125 °C (*1) : Device itself (*2) : Mounted on glass epoxy board based on EIA/JEDEC. (114.3x76.2x1.6mm: 2Layers) (cid:132) ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Detection Voltage V -1.0% − +1.0% V DET V V V Hysteresis Voltage V DET DET DET V HYS ×0.03 ×0.05 ×0.08 V =1.3V∼1.7V Version − 0.5 1.0 µA Quiescent Current I V =V +1V DET SS DD DET V =1.8V∼6.0V Version − 0.8 1.6 µA DET V =1.2V 0.75 2.0 − mA Output Current I Nch,V =0.5V DD OUT DS V =2.4V (≥2.7V Version) 4.5 7.0 − mA DD Output Leak Current I V =V =9V − − 0.1 µA LEAK DD OUT Detection Voltage ∆ V /∆Ta Ta=0 ∼ +85°C − ±100 − ppm/°C Temperature Coefficient DET Operating Voltage(*3) V R =100kΩ 0.8 − 9 V DD L (*3): The minimum Operating Voltage(V ) indicates the same value of the input voltage(V ) on condition that V OPL DD OUT becomes 10% or less of the input voltage(V ). DD - 2 - Ver.2006-02-23
NJU7700/01 (cid:132) TEST CIRCUIT 1 COMMOM TEST CIRCUIT R L I NJU7700 SS A VDD VOUT VDD V VDET V VOUT / V OPL V SS 2 OUTPUT CURRENT/OUTPUT LEAK CURRENT TEST CIRCUIT NJU7700 I / I OUT LEAK V V DD OUT A VDD VDS / V OUT V SS (cid:132) TYPICAL APPLICATION V DD R L 100kΩ CPU NJU7700 Micro Processor etc. V V DD OUT RESET SIGNAL INPUT V SS V SS Ver.2006-02-23 -3-
NJU7700/01 (cid:132) NJU7701 (cid:132) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Input Voltage V +10 V DD Output Voltage V V -0.3 ∼ V +0.3 V OUT SS DD Output Current I 50 mA OUT F : SOT-23-5 200(*4) Power Dissipation P mW D F4 : SC-82AB 250(*5) Operating Temperature Topr −40 ∼ +85 °C Storage Temperature Tstg −40 ∼ +125 °C (*4) : Device itself (*5) : Mounted on glass epoxy board based on EIA/JEDEC. (114.3x76.2x1.6mm: 2Layers) (cid:132) ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Detection Voltage V -1.0% − +1.0% V DET V V V Hysteresis Voltage V DET DET DET V HYS ×0.03 ×0.05 ×0.08 V =1.3V∼1.7V Version − 0.5 1.0 µA Quiescent Current I V =V +1V DET SS DD DET V =1.8V∼6.0V Version − 0.8 1.6 µA DET V =1.2V 0.75 2.0 − mA Nch,V =0.5V DD DS V =2.4V (≥2.7V Version) 4.5 7.0 − mA DD V =4.8V (≤3.9V Version) 2.0 3.5 − mA Output Current I DD OUT V =6.0V Pch,V =0.5V DD 2.5 4.0 − mA DS (4.0V∼5.6V Version) V =8.4V (≥5.7V Version) 3.0 5.0 − mA DD Detection Voltage Temperature ∆ V /∆Ta Ta=0 ∼ +85°C − ±100 − ppm/°C DET Coefficient Operating Voltage(*6) V R =100kΩ 0.8 − 9 V DD L (*6): The minimum Operating Voltage(V ) indicates the same value of the input voltage(V ) on condition that V OPL DD OUT becomes 10% or less of the input voltage(V ). DD - 4 - Ver.2006-02-23
NJU7700/01 (cid:132) TEST CIRCUIT 1 COMMON TEST CIRCUIT ISS NJU7701 A VDD VOUT VDD V VDET V VOUT V SS 2 Nch OUTPUT CURRENT TEST CIRCUIT NJU7701 I OUT VDD VOUT A V DD V DS V SS 3 Pch OUTPUT CURRENT TEST CIRCUIT V DS NJU7701 I OUT VDD VOUT A V DD V SS Ver.2006-02-23 -5-
NJU7700/01 4 MINUMUM OPERATING VOLTAGE TEST CIRCUIT R L NJU7701 VDD VOUT VDD V VOPL V VOUT V SS (cid:132) TYPICAL APPLICATION V DD CPU NJU7701 Micro Processor etc. VDD VOUT RINEPSUETT SIGNAL V SS V SS - 6 - Ver.2006-02-23
NJU7700/01 (cid:132) FUNCTIONAL DESCRIPTION (1) Basic operation Supply voltage (1) When supply voltage(V ) drops below (V ) Hysteresis voltage DD DD (V ) detection voltage(V ), Output voltage(V ) HYS Release voltage DET OUT (V + V ) changes "H" to "L" to alert reset state. Detection voltage DET HYS (V ) (2) The reset state is kept while V is lower than DET DD release voltage. The release voltage is a sum Minimum operation voltage (V ) of V and Hysterisis voltage (V ). Please OPL DET HYS V refer to the (*7) below. SS (3) When V becomes higher than the release DD Output voltage voltage, then V changes from "L" to "H" to OUT (V ) OUT resume normal state. (*7) V is to avoid unstable V state caused HYS OUT by rapid voltage change at nearby V . DET V SS (*8): C-MOS output product (NJU7701) : When V less than V , V is free of the shaded region. DD OPL OUT [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. Ver.2006-02-23 -7-