NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device is a rugged co−packaged free wheeling diode with a low forward voltage. 25 A, 1200 V Features V = 1.85 V • CEsat Low Saturation Voltage using Trench with Fieldstop Technology E = 0.8 mJ • off Low Switching Loss Reduces System Power Dissipation • Optimized for Low Case Temperature in IH Cooker Application C • Low Gate Charge • These are Pb−Free Devices Typical Applications • G Inductive Heating • Consumer Appliances • E Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage V 1200 V CES Collector current I A G TO−247 @ TC = 25°C C 50 C E CASE 340L @ TC = 100°C 25 STYLE 4 Pulsed collector current, Tpulse ICM 200 A limited by TJmax MARKING DIAGRAM Diode forward current I A F @ TC = 25°C 50 @ TC = 100°C 25 Diode pulsed current, Tpulse limited IFM 200 A by TJmax Gate−emitter voltage V (cid:2)20 V 25N120IHL GE AYWWG Power Dissipation P W D @ TC = 25°C 192 @ TC = 100°C 77 Operating junction temperature TJ −55 to +150 °C range Storage temperature range Tstg −55 to +150 °C A = Assembly Location Lead temperature for soldering, 1/8” TSLD 260 °C Y = Year from case for 5 seconds WW = Work Week G = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the ORDERING INFORMATION Recommended Operating Conditions may affect device reliability. Device Package Shipping NGTB25N120IHLWG TO−247 30 Units / Rail (Pb−Free) © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: August, 2012 − Rev. 2 NGTB25N120IHLW/D

NGTB25N120IHLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT R(cid:2)JC 0.65 °C/W Thermal resistance junction−to−case, for Diode R(cid:2)JC 2.0 °C/W Thermal resistance junction−to−ambient R(cid:2)JA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 (cid:3)A V(BR)CES 1200 − − V gate−emitter short−circuited Collector−emitter saturation voltage VGE = 15 V, IC = 25 A VCEsat − 1.85 2.3 V VGE = 15 V, IC = 25 A, TJ = 150°C − 2.1 − Gate−emitter threshold voltage VGE = VCE, IC = 250 (cid:3)A VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 1200 V ICES − − 0.5 mA emitter short−circuited VGE = 0 V, VCE = 1200 V, TJ = 150°C − − 2.0 Gate leakage current, collector−emitter VGE = 20 V, VCE = 0 V IGES − − 100 nA short−circuited DYNAMIC CHARACTERISTIC Input capacitance Cies − 4700 − pF Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 155 − Reverse transfer capacitance Cres − 100 − Gate charge total Qg 200 nC Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Qge 38 Gate to collector charge Qgc 100 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time TJ = 25°C td(off) 235 ns Fall time VCC = R6g0 0= V1,0 I C(cid:4) = 25 A tf 160 Turn−off switching loss VGE = 0 V/ 15V Eoff 0.8 mJ Turn−off delay time TJ = 125°C td(off) 250 ns Fall time VCC = R6g0 0= V1,0 I C(cid:4) = 25 A tf 225 Turn−off switching loss VGE = 0 V/ 15V Eoff 1.9 mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 25 A VF 1.7 1.8 V VGE = 0 V, IF = 25 A, TJ = 150°C 1.8 http://onsemi.com 2

NGTB25N120IHLWG TYPICAL CHARACTERISTICS 120 120 TJ = 25°C VGE = 20 to 13 V TJ = 150°C VGE = 20 to 11 V A) A) T ( 100 11 V T ( 100 N N E 10 V E R 80 R 80 R R U U C C 10 V R 60 R 60 O O T T 9 V C 9 V C E 40 E 40 L L L L O O 8 V C C , C 20 8 V , C 20 I I 7 V 7 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 120 120 VGE = 20 to 13 V A) A) T ( 100 11 V T ( 100 N N E E R 80 R 80 R R CU TJ = −40°C 10 V CU R 60 R 60 O O T T C C E 40 E 40 OLL 9 V OLL TJ = 150°C C C I, C 20 8 V 7 V I, C 20 TJ = 25°C 0 0 0 1 2 3 4 5 0 5 10 15 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 10,000 120 Cies A) 100 F) T ( TJ = 25°C TJ = 125°C p N E (1000 RE 80 C R N U A C CIT D 60 A R P A CA 100 Coes RW 40 C, FO Cres I, F 20 10 0 0 25 50 75 100 125 150 175 200 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics http://onsemi.com 3

NGTB25N120IHLWG TYPICAL CHARACTERISTICS 16 J) 2.0 E (V) 14 200 V SS (m 1.8 VVCGEE == 61050 V V LTAG 12 400 V 600 V G LO 11..46 IRCg = = 2 150 A (cid:4) O N R V 10 CHI 1.2 E T TT 8 WI 1.0 MI S E 6 F 0.8 − F E O 0.6 AT 4 N− G R 0.4 V, GE 02 E, TUoff 0.20 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 QG, GATE CHARGE (nC) TEMPERATURE (°C) Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature 1000 J) 3.0 E (ns) 100 td(tofff) NG LOSS (m 22..05 VVRTJCGg E =E= == 11 560100 5(cid:4)°0 CV V M HI TI C NG WIT 1.5 CHI F S T 10 F 1.0 WI VCE = 600 V −O S VGE = 15 V RN IC = 25 A TU 0.5 1 Rg = 10 (cid:4) , off 0 E 0 20 40 60 80 100 120 140 160 10 14 18 22 26 30 34 38 42 TEMPERATURE (°C) IC, COLLECTOR (A) Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. I C 1000 J) 3.0 m tf S ( S 2.5 O s) td(off) L E (n 100 NG 2.0 M HI TI C NG WIT 1.5 CHI F S T 10 F 1.0 SWI 1 VVTRJCGg E =E= == 11 560100 5(cid:4)°0 CV V , TURN−Ooff 0.50 VVITCJCG =E=E 2==15 561 0A05°0 CV V E 10 14 18 22 26 30 34 38 42 5 15 25 35 45 55 65 75 85 IC, COLLECTOR (A) Rg, GATE RESISTOR ((cid:4)) Figure 11. Switching Time vs. I Figure 12. Energy Loss vs. Rg C http://onsemi.com 4

NGTB25N120IHLWG TYPICAL CHARACTERISTICS 10,000 2.5 2.0 s) td(off) n E (1000 J) M m 1.5 G TI tf GY ( N R CHI NE 1.0 T 100 E SWI VVCGEE == 61050 V V 0.5 VIRCGg = E= 2= 15 01 A 5(cid:4) V ITCJ == 2155 0A°C TJ = 150°C 10 0 5 15 25 35 45 55 65 75 85 375 425 475 525 575 625 675 725 775 Rg, GATE RESISTOR ((cid:4)) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. V CE 1000 1000 1 ms 50 (cid:3)s s) td(off) NT (A) 100 E (n 100 tf RE 100 (cid:3)s TIM CUR 10 dc operation G R N O CHI CT 1 T 10 E Single Nonrepetitive SWI VICG =E 2=5 1 A5 V COLL 0.1 PCuulrsvee sT Cm =us 2t 5b°eC derated Rg = 10 (cid:4) , C linearly with increase TJ = 150°C I in temperature 1 0.01 375 425 475 525 575 625 675 725 775 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. V Figure 16. Safe Operating Area CE 1000 A) T ( N E R 100 R U C R O T C E 10 L L O C , C I VGE = 15 V, TC = 125°C 1 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5

NGTB25N120IHLWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle R(cid:2)JC = 0.65 20% 0.1 10% C/W) 5% JunctionR1 R2 Rn Case 0R.i0 (2°6C5/W9) 1(cid:5)i. 0(sEe−c4) ° R(t) ( 2% Ci = (cid:5)i/Ri 00..0160223416 10.7.060E2−4 0.01 1% 0.2121 0.1 C1 C2 Cn 0.1057 2.0 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x Z(cid:2)JC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance 10 R(cid:2)JC = 2.0 50% Duty Cycle 1 20% W) 10% JunctionR1 R2 Rn Case Ri (°C/W) (cid:5)i (sec) °C/ 0.1 5% 0.25813 1.48E−4 R(t) ( 2% Ci = (cid:5)i/Ri 00..5677711437 00..00032 0.38693 0.1 0.01 1% C1 C2 Cn 0.1057 2.0 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x Z(cid:2)JC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. Diode Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 6

NGTB25N120IHLWG Figure 21. Definition of Turn On Waveform http://onsemi.com 7

NGTB25N120IHLWG Figure 22. Definition of Turn Off Waveform http://onsemi.com 8

NGTB25N120IHLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI C Y14.5M, 1982. −B− 2. CONTROLLING DIMENSION: MILLIMETER. E MILLIMETERS INCHES U L DIM MIN MAX MIN MAX A 20.32 21.08 0.800 8.30 N 4 B 15.75 16.26 0.620 0.640 C 4.70 5.30 0.185 0.209 A −Q− D 1.00 1.40 0.040 0.055 E 1.90 2.60 0.075 0.102 1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084 G 5.45 BSC 0.215 BSC H 1.50 2.49 0.059 0.098 P J 0.40 0.80 0.016 0.031 −Y− K 19.81 20.83 0.780 0.820 L 5.40 6.20 0.212 0.244 K N 4.32 5.49 0.170 0.216 P --- 4.50 --- 0.177 Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 W J STYLE 4: F2 PL H PIN 1.GATE G 2.COLLECTOR 3.EMITTER D3 PL 4.COLLECTOR 0.25 (0.010) M Y Q S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com NGTB25N120IHLW/D 9

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