DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NE85634 / JEITA Part No. T NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD U FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz O NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 · 0.7 mm (t) ceramic substrate) • Small package : 3-pin power minimold package - ORDERING INFORMATION E Part Number Quantity Supplying Form NE85634-A 25 pcs (Non reel) •12 mm wide embossed taping 2SC3357-A •Collector face the perforation side of the tape NE85634-T1-A 1 kpcs/reel 2SC3357-T1-A S Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs. A ABSOLUTE MAXIMUM RATINGS (TA = +25(cid:176) (cid:176)(cid:176)(cid:176) C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V H Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation Ptot Note 1.2 W P Junction Temperature Tj 150 (cid:176) C Storage Temperature Tstg - 65 to +150 (cid:176) C Note Mounted on 16 cm2 · 0.7 mm (t) ceramic substrate Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10211EJ01V0DS (1st edition) The mark (cid:144)(cid:144)(cid:144)(cid:144) shows major revised points. (Previous No. P10357EJ4V1DS00) Date Published January 2003 CP(K)

NE85634 / 2SC3357 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth (j-a)Note 62.5 °C/W T Note Mounted on 16 cm2× 0.7 mm (t) ceramic substrate ELECTRICAL CHARACTERISTICS (TA = +25°°°°C) U Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA – – 1.0 μA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA O– – 1.0 μA DC Current Gain hFE Note 1 VCE = 10 V, IC = 20 mA 50 120 250 – RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA – 6.5 – GHz Insertion Power Gain ⏐S21e⏐2 VCE = 10 V, IC = 20 mA, f =- 1 GHz – 9.0 – dB Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB E Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB Reverse Transfer Capacitance CreNote 2 VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.65 1.0 pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% S 2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE CLASSIFICATION A Rank RH RF RE Marking RH RF RE hFE Value 50 to 100 80 to 160 125 to 250 H P 2 Data Sheet PU10211EJ01V0DS

NE85634 / 2SC3357 TYPICAL CHARACTERISTICS (TA = +25°°°°C, unless otherwise specified) TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE pF) 2 Tf = 1 MHz n P (W)tot 2 ance C (re patio C16e rcamm2ic× s0u.7b smtrmat e(t) pacit 1 U si a s C er Di 1 sfer w n Po Tra 0.5 al Free air Rth (j-a) 312.5˚C/W e Tot ers O v e R 0.3 0 25 50 75 100 125 150 0.2 0.5 1 2 5 10 20 30 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) DC CURRENT GAIN vs. GAIN BANDWIDTH PRODUCT - COLLECTOR CURRENT vs. COLLECTOR CURRENT 200 10 VCE = 10 V Ez) VCE = 10 V H 5 G ain hFE 100 duct f (T 32 G o ent 50 S h Pr 1 C Curr ndwidt 0.5 D a 20 B 0.3 n ai 0.2 A G 10 0.1 0.5 1 5 10 50 0.1 0.5 1 5 10 50 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG INSERTION POWER GAIN H vs. FREQUENCY vs. COLLECTOR CURRENT B) 25 15 2S| (dB)21ewer Gain MAG (d 1250P |S21eM|2AG 2| (dB)ain |S21e 10 Vf =CE 1 = G 1H0z V ertion Power Gain |ximum Available Po 150 IVCC =E =2 01 0m VA Insertion Power G 5 nsMa 0 0 I 0.05 0.1 0.2 0.5 1 2 0.5 1 5 10 5070 Frequency f (GHz) Collector Current IC (mA) Data Sheet PU10211EJ01V0DS 3

NE85634 / 2SC3357 NOISE FIGURE vs. 7 COLLECTOR CURRENVf =CTE 1 = G 1H0z V M (dBc)2M (dBc)3 100 IM2, IM3 vs. COLVVLCoEE= C= 1 10T00O VdRBμ VC/5U0R ΩRENT NF (dB) 56 Distortion IDistortion I 9800 IIRMMg 23=:: ffR ==e =92 0 5× 0+ 2 Ω10000 – M I1MTH930z MHz Noise Figure 1234 Order Intermodulation Order Intermodulation 76450000 U IM2 00.5 1 5 10 5070 2nd 3rd 30 20 O30 40 50 60 70 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. - S-PARAMETERS E S A H P 4 Data Sheet PU10211EJ01V0DS

NE85634 / 2SC3357 SMITH CHART S11e, S22e-FREQUENCY CONDITION : VCE = 10 V WAVELENG0T904H..00S1TO804W..00A2R0D100..409G704E2..00ND.00A.O40EL38DRRAWAOITNCCEOLOEF3TFEFRTC060IFE.OSON.E40HT40LI.RTG7N.NG00DANE40GE6R4L1−0EE001E.V0.S0A45.W.60401..000255501.100−.05.20.045440.3.T000.1N6.P00E0O.6N004SIO1.3T.1IP404−VME 0O4RC3E EA40CC4.NT.7. 0AA00(0 ).+ T N00X J–4C7 .–0C –XJ .A− –E–403EZ––0.2)1CRO3O–1Z(O3 − E 2M V0 PI4 0T5.O8A..00GN.00005EE.8.NN04T0.30221112−0496.0.00.0.0006..940.401 f000 10714.00.0.=710.511.1.0−.040R0 0E0AC0.6.T9A80210.0.803N.01.1.CS 1300.70.E10G091 0C−1 00.8.O9 9 .01 H( M e– 8 20P0–RZ3O–O1z..0.91–3N..0)02E8N01.00.1.019T90−2020..030470.2.002..14.3.1.200341.6..0.0740.03.6060..0861.402..18.0E1.0208.Sf8.00848 0006.01.1−.=1.331.6.21011..60.0240 e21.84.110.042.050.f51307 .f 31.570G =0-.5−0=6 .11.H6 0026.0z3.14..3.04.21380.601.16.0800 6 G−00G.4.0722..3001H.33.1H03.70z5.050z0058.−310.22.013.800.033.409.0304110.10−01.130.9.4040.O0.02030230.006.3050.−00.23.00100.122.1092005202005−00209.0222..1012201.080−00.320287..022.2004.22.6052.007.22.3006.22.4052.0 U:: IICC == 2400 mmAAT S S21e-FREQUENCY S12e-FREQUENCY CONDITION : VCE = 10 V, IC = 20 mA CONDITION : VCE = 10 V, IC = 20 mA 90˚ A 90˚ 120˚ f = 0.2 GHz 60˚ 120˚ 60˚ f = 2.0 GHz S21e 150˚ 30˚ 150˚ 30˚ H S12e f = 2.0 GHz f = 0.2 GHz 180˚ 0˚ 180˚ 0˚ 3 6 9 12 15 0.1 0.2 0.3 0.4 0.5 P –150˚ –30˚ –150˚ –30˚ –120˚ –60˚ –120˚ –60˚ –90˚ –90˚ Data Sheet PU10211EJ01V0DS 5

NE85634 / 2SC3357 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (UNIT: mm) 4.5±0.1 T 1.6±0.2 1.5±0.1 E C B 2.5±0.1 4.0±0.25 U N. MI 8 0. 0.42±0.06 0.42±0.06 0.O41+–00..0036 0.47±0.06 1.5 3.0 - PIN CONNECTIONS E: Emitter E C: Collector (Fin) B: Base (IEC : SOT-89) S A H P 6 Data Sheet PU10211EJ01V0DS

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