A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 JEITA Data Sheet Part No. R09DS0022EJ0200 NPN Silicon RF Transistor Rev.2.00 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold Jun 29, 2011 T DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been appliedU 3-pin super minimold package. FEATURES • Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz O • High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin super minimold package <R> ORDERING INFORMATION - Part Number Order Number Package Quantity Supplying Form NE85630 NE85630-A 3-pin super 50 pcs (Non reel) •8 mm wide embossed taping 2SC4226 2SC4226-A E Minimold NE85630-T1 NE85630-T1-A 3 kpcs/reel •Pin 3 (Collector) face the perforation side of the tape (Pb-Free) 2SC4226-T1 2SC4226-T1-A S Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) A Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage H VEBO 3 V Collector Current IC 100 mA Total Power Dissipation Ptot Note 150 mW Junction Temperature Tj 150 °C Storage TePmperature Tstg −65 to +150 °C N ote Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0022EJ0200 Rev.2.00 Page 1 of 6 Jun 29, 2011

A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 − − 1.0 μA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 1.0 TμA DC Current Gain hFE Note 1 VCE = 3 V, IC = 7 mA 40 110 250 – RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA 3.0 4.5 – GHz U Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9 – dB Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz − 1.2 2.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0, f = 1 MHz − 0.7 1.5 pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% O 2. Collector to base capacitance when the emitter grounded <R> hFE CLASSIFICATION Rank R23/Y23 R24/Y24 R25/Y25 - Marking R23 R24 R25 E hFE Value 40 to 80 70 to 140 125 to 250 S A H P R09DS0022EJ0200 Rev.2.00 Page 2 of 6 Jun 29, 2011

A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 250 F) 5 mW) Free Air C (pre f = 1 MHz P (tot 200 ce 2 T sipation 150 Capacitan 1 er Dis100 nsfer 0.5 U w a al Po 50 se Tr 0.2 ot er T v e R 0.1 0 25 50 75 100 125 150 1 2 5 10 20 50 O Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 20 25 VCE = 3 V - 160 μ A 1 4 0 μ A mA) EmA) 20 120 μ A nt I (C nt I (C 15 100 μ A urre 10 urre 80 μ A C C or or 10 60 μ A ct S ct olle olle 40 μ A C C 5 IB = 20 μ A 0 0.5 1 0 5 10 A Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. GAIN BANDWIDTH PRODUCT COLLECTOR CURRENT vs. COLLECTOR CURRENT 200 20 H VCE = 3 V Hz) Vf =CE 1 = G 3H Vz G ain hFE 100 (duct fT 10 G o ent 50 P h Pr 5 Curr widt C nd D a 20 B 2 n ai G 10 1 0.5 1 5 10 50 0.5 1 5 10 50 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0022EJ0200 Rev.2.00 Page 3 of 6 Jun 29, 2011

A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 INSERTION POWER GAIN INSERTION POWER GAIN vs. FREQUENCY vs. COLLECTOR CURRENT 24 15 VCE = 3 V VCE = 3 V 2 (dB)S|21e 20 IC = 7 mA 2S| (dB)21e f = 1 GHz n | 16 n | 10 T ai ai G G er 12 er w w o o P 8 P 5 n n o o serti 4 serti U n n I I 0 0 0.1 0.2 0.5 1 2 5 0.5 1 5 10 50 100 Frequency f (GHz) Collector Current IC (mA) O NOISE FIGURE vs. COLLECTOR CURRENT 6 VCE = 3 V f = 1 GHz 5 B) - d F ( 4 N e E ur 3 g Fi e s 2 oi N 1 S 0 0.5 1 5 10 50 100 Collector Current IC (mA) A Remark The graphs indicate nominal characteristics. H P R09DS0022EJ0200 Rev.2.00 Page 4 of 6 Jun 29, 2011

A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www2.renesas.com/microwave/en/download.html T U O - E S A H P R09DS0022EJ0200 Rev.2.00 Page 5 of 6 Jun 29, 2011

A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 PACKAGE DIMENSIONS 3-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 +0.10.3–0 1.25±0.1 T 5 2 6 2 0. 0. ± 2.0 0.65 1 3 +0.13–0 U 0. Marking 3 0. O 0.9±0.1 +0.1 0.15–0.05 1 0. o - 0 t E PIN CONNECTIONS 1.Emitter 2.Base 3.Collector S (EIAJ : SC-70) A H P R09DS0022EJ0200 Rev.2.00 Page 6 of 6 Jun 29, 2011

Revision History NE85630 / 2SC4226 Data Sheet Description Rev. Date Page Summary − Dec 2003 − Previous No. :PU10450EJ01V0DS 2.00 Jun 29, 2011 p.1 Modification of ORDERING INFORMATION p.2 Modification of h CLASSIFICATION T FE U O - E S A H P All trademarks and registered trademarks are the property of their respective owners. C - 1

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