DDAATTAA SSHHEEEETT SILICON TRANSISTOR 2SC4094 NE68139 / JEITA Part No. T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD U DESCRIPTION The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor OPACKA(GUnEi tDs:I MmEmN)SIONS designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability 2.8+-0.03.2 achieve a very wide dynamic range and excellent linearity. This +0.14-0.05 1.5+-0.01.2 +0.14-0.05 0. 0. achieved by direct nitride passivated base surface process (DNP 2 3 pFrEoAceTsUs)R EwShich is a proprietary new fabrication technique. - 2.9±0.2(1.8)0.950.85 (1.9) E 1 4 •• N(cid:1)SF2 =1e (cid:1)12. 2= d1B5 TdYBP T. Y@Pf. =@ 1f .=0 1G.H0 zG, HVzC,E V=C 8E =V ,8 I CV =, I7C =m 2A0 mA +0.10.6-0.05 5(cid:176) 5(cid:176) +0.10.4-0.05 (cid:1)(cid:1) ABCSoOlleLcUtoTr Eto MBaAsXe IVMoUltaMg e RATINVGCBSO (TA =S 25 2C0) V +0.21.1-0.10.8 +0.16-0.06 Collector to Emitter Voltage VCEO 10 V 5(cid:176) o 0.1 5(cid:176) 0.1 Emitter to Base Voltage VEBO 1.5 V 0 t Collector Current IC 65 mA PIN CONNECTIONS Total Power Dissipation APT 200 mW 1. Collector Junction Temperature Tj 150 (cid:2)C 2. Emitter 3. Base Storage Temperature Tstg (cid:3)65 to +150 (cid:2)C 4. Emitter (cid:1)(cid:1) ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERHISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 (cid:1)A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 (cid:1)A VEB = 1 V, IC = 0 DC Current Gain hFE 50 250 VCE = 8V, IC = 20 mA Gain PBandwidth Product fT 9 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz Feed-Back Capacitance Cre 0.25 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain (cid:1)S21e(cid:1)2 13 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz Maximum Available Gain MAG 17 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.2 2.0 dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz hFE Classification Class R36/RCF * R37/RCG * R38/RCH * Marking R36 R37 R38 hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification Document No. P10366EJ1V1DS00 (1st edition) Date Published March 1997 N

NE68139 / 2SC4094 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. FEED-BACK CAPACITANCE vs. AMBIENT TEMPERATURE COLLECTOR TO BASE VOLTAGE 2.0 T Free air W f = 1.0 GHz m200 ation- ce-pF1.0 p n Dissi acita0.7 U er ap0.5 w100 C o k P c al ba ot d-0.3 T e P-T Fe C-re0.2 O 0 50 100 150 TA-Ambient Temperature-°C 0.1 1 2 3 5 7 10 20 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. -INSERTION GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 200 20 VCE = 8 V E VCE = 8 V f = 1.0 GHz 100 nt Gain ain-dB e G urr 50 S n C o C erti 10 D s h-FE 20 2S|-In21e | A 10 0.5 1 5 10 50 IC-Collector Current-mA 0 1 2 5 10 20 40 IC-Collector Current-mA H GAIN BANDWIDTH PRODUT vs. MAXIMUM AVAILABLE GAIN,INSERTION COLLECTOR CURRENT GAIN vs. FREQUENCY 30 30 VCE = 8 V 20 dB VCE = 8 V Hz ain- MAG IC = 20 mA G P G Gain Bandwidth Product-10753 2S|-Insertion Gain -dB21eMAG-Maximum Available 2100 |S21e|2 f-T 2 | 0 0.1 0.2 0.5 1.0 2.0 1 2 3 5 7 10 20 30 f-Frequency-GHz IC-Collector Current-mA 2

NE68139 / 2SC4094 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 8 V f = 1.0 GHz 6 T B 5 d e- ur g 4 Fi e s oi 3 U N F- N 2 1 0 O 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 - f (MHz) S11 S11 S21 S21 S12 S12 S22 S22 200 0.774 47.8 12.689 146.5 0.031 65.4 0.882 19.1 E 400 0.631 88.8 9.952 119.4 0.048 53.4 0.723 29.5 600 0.523 120.9 7.813 100.9 0.058 46.2 0.611 33.4 800 0.460 145.1 5.966 87.6 0.067 43.9 0.564 34.5 1000 0.426 166.6 4.841 76.7 0.074 43.8 0.515 37.6 1200 0.416 178.2 4.065 68.8 0.083 43.5 0.488 39.6 S 1400 0.417 163.0 3.413 60.7 0.087 41.2 0.459 44.1 1600 0.430 152.1 3.035 54.1 0.098 42.8 0.443 45.9 1800 0.443 142.1 2.659 48.0 0.105 40.1 0.428 51.1 2000 0.458 136.5 2.482 44.3 0.114 43.0 0.414 53.5 A VCE = 8.0 V, IC = 20.0 mA, ZO = 50 f (MHz) S11 S11 S21 S21 S12 S12 S22 S22 200 0.461 89.8 23.331 121.6 0.021 60.7 0.665 27.7 400 0.H364 135.8 13.501 99.2 0.033 61.2 0.511 30.5 600 0.338 163.4 9.535 86.4 0.046 61.5 0.448 29.5 800 0.330 177.9 7.083 77.5 0.056 62.1 0.430 29.5 1000 0.334 163.2 5.604 69.3 0.070 60.0 0.402 32.5 1200 0.344 153.9 4.722 63.5 0.084 60.4 0.385 34.8 1400 0.359 143.1 3.982 56.8 0.091 54.9 0.362 39.5 P 1600 0.383 136.1 3.517 51.1 0.104 54.5 0.350 42.1 1800 0.401 128.3 3.094 45.6 0.116 49.9 0.337 47.4 2000 0.419 124.7 2.882 42.7 0.127 50.8 0.323 50.5 3

NE68139 / 2SC4094 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 8 V, IC = 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz) S21e-FREQUENCY WAVELENG0T904H..00S1TO840W..00A2R0D100..409G740E2..00ND.00A.O40EL38DRRAWAOITNCCEOLO3FETEFFRTC060IF.OEOS.NE40H40TL.IRGT7.NNG00DANE40GE64RL1−0EE00E.V10.S0A45W..64001..000255501.100−.05.20.045440.3.T000.1.N6P000EO.6N040SIO1.3T1.IP404−VME 0O4RC3E EA40CC4.NT.7. 0AA00(0 ).+ T N0X0 J–4C7 .–C0 J–X .A− –E–043EZ––0.2)1CSRO3O–1Z(O3 − E 2M V0 PI4 10T5.O8A..00G1N.00005EE.8.eNN04T0.30221112−0496.0.00.0.0006..9400.41 00010714.200.0.710.511.1.0−.04 0R00GEIACC0.6TH9 A8010.0.80I3N=.01C.1.Cz1300.70.E10 091 5 =0C−0 0.8.O99 .0 ( M m– 822 0P0–RZ3O–1.O.0.91–30N..A0)02E82N0 1.001.0.19Tm9 0−G2020..030470.2.00A2..14.3.1.200H341.6..0.0740.03.6060.z.086I1.402..18.01.C020.88E.0084800 06.01.1−.1.3=031.6.1011..60.040. 221.84.11. 0402.05G0.51307 .I31.570m0C.5H−06 .1-1.6=Az06.0 314.5.3.041380.061.16.08 0006m−00.4.0722..3001A.33S.103.7015.05000528.−3e10.22-.013S.F800.033.4092R.0034110.210−01.e1E30.9.4040.0.020Q30230.0006.3050.−00.23U..00100.1222.102900520200O5E−0020 9.0222..1G012201.080−N003.2028.7.022H.2004.2C2.6052.007.22.3z00Y6.22.4052.0 U T CONDITION VCE = 8 V CONDITION VCE = 8 V IC = 20/5 mA IC = 20/5 mA freq. = 0.2 to 2 GHz (Step 200 MHz) freq. = 0.2 to 2 GHz (Step 200 MHz) 90° S 90° 120° 60° 120° 60° IC = 20 mA 0.2 GHz 150° AS21e 30° 150° IC = 20 mA 2GHz 30° S12e IC = 5 mA IC = 5 mA 2GHz 0.2 GHz 180° 0°180° 0° 0 4 8 12 16 20 0 0.04 0.08 0.12 0.16 0.2 H −150° −30° −150° −30° P −120° −60° −120° −60° −90° −90° 4

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