ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET,MOSFET - 射频 > NE3515S02-T1C-A
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NE3515S02-T1C-A产品简介:
ICGOO电子元器件商城为您提供NE3515S02-T1C-A由CEL设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NE3515S02-T1C-A价格参考。CELNE3515S02-T1C-A封装/规格:晶体管 - FET,MOSFET - 射频, RF Mosfet HFET 2V 10mA 12GHz 12.5dB 14dBm S02。您可以下载NE3515S02-T1C-A参考资料、Datasheet数据手册功能说明书,资料中有NE3515S02-T1C-A 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | FET RF HFET 12GHZ 2V 10MA S02射频JFET晶体管 Super Low Noise Pseudomorphic |
产品分类 | RF FET分离式半导体 |
Id-ContinuousDrainCurrent | 88 mA |
Id-连续漏极电流 | 88 mA |
品牌 | CEL |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,晶体管射频,射频JFET晶体管,CEL NE3515S02-T1C-A- |
数据手册 | |
P1dB | 14 dBm |
产品型号 | NE3515S02-T1C-A |
Pd-PowerDissipation | 165 mW |
Pd-功率耗散 | 165 mW |
Vds-Drain-SourceBreakdownVoltage | 4 V |
Vds-漏源极击穿电压 | 4 V |
Vgs-Gate-SourceBreakdownVoltage | - 3 V |
Vgs-栅源极击穿电压 | - 3 V |
产品 | RF JFET |
产品种类 | 射频JFET晶体管 |
供应商器件封装 | S02 |
其它名称 | NE3515S02-T1C-ACT |
功率-输出 | 14dBm |
功率耗散 | 165 mW |
包装 | 剪切带 (CT) |
商标 | CEL |
噪声系数 | 0.3dB |
增益 | 12.5dB |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | 4-SMD,扁平引线 |
封装/箱体 | S0-2 |
工厂包装数量 | 2000 |
技术 | GaAs |
晶体管类型 | HFET |
最大工作温度 | + 125 C |
标准包装 | 1 |
正向跨导-最小值 | 70 mS |
漏极连续电流 | 88 mA |
漏源电压VDS | 4 V |
电压-测试 | 2V |
电压-额定 | 4V |
电流-测试 | 10mA |
类型 | GaAs HEMT |
闸/源击穿电压 | - 3 V |
频率 | 12GHz |
额定电流 | 88mA |
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER T N-CHANNEL HJ-FET U FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micro-X plastic (S02) package O APPLICATIONS • X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer • DBS LNB, VSAT • Other X to Ku-band communication systems - ORDERING INFORMATION E Part Number Order Number Package Quantity Marking Supplying Form NE3515S02-T1C NE3515S02-T1C-A S02 (Pb-Free) 2 kpcs/reel G •8 mm wide embossed taping •Pin 4 (Gate) faces the perforation side NE3515S02-T1D NE3515S02-T1D-A 10 kpcs/reel S of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3515S02-A A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V H Gate to Source Voltage VGS 3 V Drain Current ID IDSS mA Gate Current IG 100 A Total Power Dissipation Ptot Note 165 mW P Channel Temperature Tch +125 C Storage Temperature Tstg 65 to +125 C Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10708EJ01V0DS (1st edition) Date Published February 2008 NS
NE3515S02 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V T Drain Current ID 5 10 25 mA Input Power Pin 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) U Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 32 60 88 mA O Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.2 0.8 1.4 V Transconductance gm VDS = 2 V, ID = 10 mA 45 70 mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz 0.3 0.5 dB Associated Gain Ga 11 12.5 dB - Gain 1 dB Compression PO (1 dB) VDS = 3 V, ID = 25 mA set (Non-RF), +14 dBm Output Power f = 12 GHz E S A H P 2 Data Sheet PG10708EJ01V0DS
NE3515S02 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) T U O - E S A H P Remark The graphs indicate nominal characteristics. 3 Data Sheet PG10708EJ01V0DS
NE3515S02 T U O - E S A H Remark The graphs indicate nominal characteristics. P 4 Data Sheet PG10708EJ01V0DS
NE3515S02 S-PARAMETERS T U O - E S A H P 5 Data Sheet PG10708EJ01V0DS
NE3515S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) T U O - E S A H RT/duroid 5880/ROGERS t = 0.254 mm r = 2.20 tan delta = 0.0009 @10 GHz P 6 Data Sheet PG10708EJ01V0DS
NE3515S02 PACKAGE DIMENSIONS S02 (UNIT: mm) T U O - E S A H P 7 Data Sheet PG10708EJ01V0DS
NE3515S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition TSymbol Infrared Reflow Peak temperature (package surface temperature) : 260C or below IR260 Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds U Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Partial Heating Peak temperature (terminal temperature) : 350C or below HS350 Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(WOt.) or below Caution Do not use different soldering methods together (except for partial heating). - E S A H P 8 Data Sheet PG10708EJ01V0DS
NE3515S02 This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. T 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. U • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. O - E S A H P Data Sheet PG10708EJ01V0DS 9
NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. T 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. 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