HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 D K BAND SUPER LOW NOISE AMPLIFIER 3 E N-CHANNEL HJ-FET K 0 U FEATURES 2 • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz 5 • Micro-X plastic (S02) package N 3 APPLICATIONS E • 20 GHz-band DBS LNB • Other K-band communication systems C I ORDERING INFORMATION T : t Part Number Order Number Package Quantity Marking Supplying Form n NE3514S02-T1C NE3514S02-T1C-A S02 (Pb-Free) 2 kpcs/reel D •8 mm wide embossed taping N NE3514S02-T1D NE3514S02-T1D-A 10 kpcs/reel e •Pin 4 (Gate) faces the perforation side of the tape m Remark To order evaluation samples, contact your nearby sales office. O Part number for sample order: NE3514S02-A e c ABSOLUTE MAXIMUM RATINGS (TA = +25C) a Parameter C Symbol Ratings Unit l Drain to Source Voltage VDS p 4 V Gate to Source Voltage VGS 3 V e Drain Current ID IDSS mA S R Gate Current IG 100 A Total Power Dissipation Ptot Note 165 mW n Channel Temperature Tch +125 C I I Storage Temperature Tstg 65 to +125 C - D Note Mounted on 1p.08 cm2  1.0 mm (t) glass epoxy PCB o r D Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10593EJ01V0DS (1st edition) Date Published February 2006 CP(N)

NE3514S02 RECOMMENDED OPERATING CONDITIONS (TA = +25C) D Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V 3 E Drain Current ID 5 10 15 mA Input Power Pin   0 dBm K 0 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwisUe specified) 2 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 5 Gate to Source Leak Current IGSO VGS = 3 V  0.5 10 A N Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 340 70 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.2 0.7 2.0 V E Transconductance gm VDS = 2 V, ID = 10 mA 40 55  mS C Noise Figure NF VDS = 2 V, ID I= 10 mA, f = 20 GHz  0.75 1.0 dB Associated Gain Ga 8 10  dB T : t n N e m O e c a C l p e S R n I I - D p o r D 2 Data Sheet PG10593EJ01V0DS

NE3514S02 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) D 3 E K 0 U 2 5 N 3 E C I T : t n N e m O e c a C l p e S R n I I - D p o r D Remark The graphs indicate nominal characteristics. 3 Data Sheet PG10593EJ01V0DS

NE3514S02 S-PARAMETERS D 3 E K 0 U 2 5 N 3 E C I T : t n N e m O e c a C l p e S R n I I - D p o r D 4 Data Sheet PG10593EJ01V0DS

NE3514S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) D 3 E K 0 U 2 5 N 3 E C I T : t n N e m O e c a C l p e RT/duroid 5880/ROGERS S R t = 0.254 mm r = 2.20 n tan delta = 0.0009 @10 GHz I I - D p o r D 5 Data Sheet PG10593EJ01V0DS

NE3514S02 PACKAGE DIMENSIONS D S02 (UNIT: mm) 3 E K 0 U 2 5 N 3 E C I T : t n N e m O e c a C l p e S R n I I - D p o r D 6 Data Sheet PG10593EJ01V0DS

NE3514S02 RECOMMENDED SOLDERING CONDITIONS D This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions E Condition Sy3mbol Infrared Reflow Peak temperature (package surface temperature) : 260C or below IRK260 Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less 0 Preheating time at 120 to 180C :U 12030 seconds Maximum number of reflow processes : 3 times 2 Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below 5 Partial Heating Peak temperature (terminal temperature) : 350C or below HS350 Soldering time (per side of device) N: 3 seconds or less 3 Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below E Caution Do not use different soldering methods together (except for partial heating). C I T : t n N e m O e c a C l p e S R n I I - D p o r D 7 Data Sheet PG10593EJ01V0DS

NE3514S02 This product uses gallium arsenide (GaAs). D Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 3 E 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. K 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final d0isposal. U • Do not burn, destroy, cut, crush, or chemically dissolve the product. 2 • Do not lick the product or in any way allow it to enter the mouth. 5 N 3 E C I T : t n N e m O e c a C l p e S R n I I - D p o r D 8 Data Sheet PG10593EJ01V0DS

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