HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 D X TO Ku BAND SUPER LOW NOISE AMPLIFIER 2 E N-CHANNEL HJ-FET K 2 U FEATURES 1 • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz 5 • Micro-X plastic (S02) package N 3 APPLICATIONS E • X to Ku-band DBS LNB • Other X to Ku-band communication systems C I ORDERING INFORMATION T : t Part Number Order Number Package Quantity Marking Supplying Form n NE3511S02-T1C NE3511S02-T1C-A S02 (PNb-Free) 2 kpcs/reel B •8 mm wide embossed taping e •Pin 4 (Gate) faces the perforation side NE3511S02-T1D NE3511S02-T1D-A 10 kpcs/reel of the tape m Remark To order evaluation samples, contact your nearby sales office. O Part number for sample order: NE3511S02-eA c ABSOLUTE MAXIMUM RATINGS (TA = +25°C) a Parameter C Symbol Ratings Unit l Drain to Source Voltage VDS p 4 V Gate to Source Voltage VeGS −3 V Drain Current S ID IDSS mA R Gate Current IG 100 µA Total Power Dissipation n Ptot Note 165 mW ChaInnel Temperature Tch +125 °C I Storage Temperature - Tstg −65 to +125 °C D p Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB o r D Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10642EJ01V0DS (1st edition) Date Published October 2006 NS CP(N)

NE3511S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) D Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V 2 E Drain Current ID 5 10 20 mA Input Power Pin − − 0 dBm K 2 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwiseU specified) 1 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 5 Gate to Source Leak Current IGSO V GS = −3 V − 0.5 10 µA N Saturated Drain Current IDSS V DS = 2 V, VGS = 0 V 20 340 70 mA Gate to Source Cutoff Voltage VGS (off) V DS = 2 V, ID = 100 µA −0.2 −0.7 −1.7 V E Transconductance gm V DS = 2 V, ID = 10 mA 50 65 − mS C Noise Figure NF VDS = 2 V, IDI = 10 mA, f = 12 GHz − 0.30 0.45 dB Associated Gain Ga T 12.5 13.5 − dB : t n N e m O e c a C l p e S R n I I - D p o r D 2 Data Sheet PG10642EJ01V0DS

NE3511S02 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) D TOTAL POWER DISSIPATION DRAIN CURRENT vs. vs. AMBIENT TEMPERATURE DRAIN TO SOURCE VOLTAGE 250 100 2 Mounted on Glass Epoxy PCB E W) (1.08 cm2 × 1.0 mm (t) ) P (mtot 200 mA) 80 K pation 150 nt I (D 60 U 2 Dissi 100 Curre 40 1VGS = 0 V Power Drain 5 –0.2 V al 50 N20 3 ot –0.4 V T –0.6 V E 0 50 100 150 200 250 0 1.0 2.0 Ambient Temperature TA (˚C) I DrainC to Source Voltage VDS (V) DRAIN CURRENT vs. T GATE TO SOURCE VOLTAGE : 80 t n VDS = 2N V A) 60 e m (D m nt I e 40 urr O C e n ai Dr 20 c a 0 C l –2.0 –1.0 0 p Gate to Source Voltage VGS (V) e MINIMUM NOISE FIGURE, MINIMUM NOISE FIGURE, S ASSOCIATED GAIN vs. FRREQUENCY ASSOCIATED GAIN vs. DRAIN CURRENT 2.0 25 1.6 16 dB) 1.8 n VIDD =S =1 02 mVA dB) 1.4 fV =DS 1 =2 2G VHz 14 Figure NF (minD1111I....2460 pG-aI 1250 Gain G (dB)a Figure NF (min 101...280 Ga 18120 Gain G (dB)a oise 0.8 o 10 ated oise 0.6 6 ated mum N 00..64 r NFmin 5 Associ mum N 0.4 NFmin 4 Associ ni D ni 0.2 2 Mi 0.2 Mi 0.0 0 0.0 0 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 Frequency f (GHz) Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet PG10642EJ01V0DS 3

NE3511S02 S-PARAMETERS D S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] E 2 URL http://www.ncsd.necel.com/microwave/index.html K 2 U 1 5 N 3 E C I T : t n N e m O e c a C l p e S R n I I - D p o r D 4 Data Sheet PG10642EJ01V0DS

NE3511S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) D 2.80 2.60 2 2.06 E 0.64 K 2 1.7 mm/R.P. U 1 5 N 3 E C I T 6 4 4 0 2.0 0.7 0.5 t:13. n 2.6 N Reference Plane 1.7 1.7 Reference Plane e (Calibration Plane) (Calibration Plane) m φ0.3 TH O e c L2a–uX Ver. 1 C l p 6.0 e RT/duroid 5880/ROGERS S R t = 0.254 mm εr = 2.20 n tan delta = 0.0009 @10 GHz I I - D p o r D Data Sheet PG10642EJ01V0DS 5

NE3511S02 PACKAGE DIMENSIONS D S02 (UNIT: mm) (Top View) (Bottom View) 2 E 3.2±0.2 K 0.65 TYP. 2.2±0.2 2 U 1 1 1 5 1 P. 2 0. Y B 0. ± T ±N 2.6 0.5 2 4 2.2 4 3 2 E 3 C3 I T (Side View) : t 2.2±0.2 n 1.7N e 5 AX. 0.0 m M 5± 1.5 0.1 O e 3.2±0.2 c a C l p e PIN CONNECTIONS S R 1. Source 2. Drain 3. Source n 4. Gate I I - D p o r D 6 Data Sheet PG10642EJ01V0DS

NE3511S02 RECOMMENDED SOLDERING CONDITIONS D This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions E ConditionSy2mbol Infrared Reflow Peak temperature (package surface temperature) : 260°C or below IRK260 Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less 2 Preheating time at 120 to 180°C :U 120±30 seconds Maximum number of reflow processes : 3 times 1 Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below 5 Partial Heating Peak temperature (terminal temperature) : 350°C or below HS350 Soldering time (per side of device) N: 3 seconds or less 3 Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below E Caution Do not use different soldering methods together (except for partial heating). C I T : t n N e m O e c a C l p e S R n I I - D p o r D Data Sheet PG10642EJ01V0DS 7

NE3511S02 This product uses gallium arsenide (GaAs). D Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. •Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 2 E 1.Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. K 2.Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until fina2l disposal. U •Do not burn, destroy, cut, crush, or chemically dissolve the product. 1 •Do not lick the product or in any way allow it to enter the mouth. 5 N 3 E C I T : t n N e m O e c a C l p e S R n I I - D p o r D

4590 Patrick Henry Drive Santa Clara, CA 95054-1817 D Telephone: (408) 919-2500 Facsimile: (408) 988-0279 2 E K Subject: Compliance with EU Directives 2 U 1 CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant 5 with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS)N and the requirements of EU Directive 3 2003/11/EC Restriction on Penta and Octa BDE. E CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devicesC containing Pb which are I exempted from the requirement of RoHS directive (*). In all ca ses the devices have Pb-free terminals. All devices with these suffixes meet the requirTements of the RoHS directive. : t This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that n go into its products as of the date of disclosure of this information. N e Restricted Substance Concentration Limit per RoHS Concentration contained per RoHS (values are not yet fixmed) in CEL devices -A -AZ Lead (Pb) O < 1000 PPM Not Detected (*) e Mercury < 1000 PPM Not Detected c Cadmium < 100 PPM Not Detected a C Hexavalent Chromium <l 1000 PPM Not Detected p PBB < 1000 PPM Not Detected e PBDE < 1000 PPM Not Detected S R If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hensitate to contact your local representative. I Important Information and DisclaIimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represen-ts knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information D provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better p integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certaoin information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CrEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL TermsD and Conditions for additional clarification of warranties and liability.

NOTICE D 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2 E 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages K incurred by you resulting from errors in or omissions from the information included herein. 3. 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