HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER T N-CHANNEL HJ-FET U FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold (M04) package O APPLICATIONS • Satellite radio (SDARS, DMB, etc.) antenna LNA • GPS antenna LNA • Low noise amplifier for microwave communication system - ORDERING INFORMATION E Part Number Order Number Package Quantity Marking Supplying Form NE3509M04 NE3509M04-A Flat-lead 4-pin thin- 50 pcs (Non reel) V80 •8 mm wide embossed taping type super minimold •Pin 1 (Source), Pin 2 (Drain) face NE3509M04-T2 NE3509M04-T2-A 3 kpcs/reel (M04) (Pb-Free) the perforation side of the tape <R> NE3509M04-T2B NE3509M04-T2B-A S15 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04-A A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage H VGS 3.0 V Drain Current ID IDSS mA Gate Current IG 200 A Total Power Dissipation Ptot Note 150 mW P Channel Temperature Tch +150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 1.08 cm2  1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10608EJ02V0DS (2nd edition) Date Published October 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS  2 3 V T Drain Current ID  10 20 mA Input Power Pin   0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) U Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V  0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V O30 45 60 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 50 A 0.25 0.5 0.75 V Transconductance gm VDS = 2 V, ID = 10 mA 80   mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 2 GHz  0.4 0.7 dB Associated Gain Ga 16 17.5  dB - Gain 1 dB Compression PO (1 dB) VDS = 2 V, ID = 10 mA (Non-RF),  11  dBm Output Power f = 2 GHz E S A H P 2 Data Sheet PG10608EJ02V0DS

NE3509M04 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) T U O - E S A H P Remark The graphs indicate nominal characteristics. 3 Data Sheet PG10608EJ02V0DS

NE3509M04 T U O - E S A H Remark The graphs indicate nominal characteristics. P 4 Data Sheet PG10608EJ02V0DS

NE3509M04 S-PARAMETERS T U O - E S A H P 5 Data Sheet PG10608EJ02V0DS

NE3509M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) T U O - E S A H P 6 Data Sheet PG10608EJ02V0DS

NE3509M04 MOUNTING PAD DIMENSIONS (REFERENCE ONLY) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) T U O - E S A H P 7 Data Sheet PG10608EJ02V0DS

NE3509M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition TSymbol Infrared Reflow Peak temperature (package surface temperature) : 260C or below IR260 Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds U Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Partial Heating Peak temperature (terminal temperature) : 350C or below HS350 Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(WOt.) or below Caution Do not use different soldering methods together (except for partial heating). - E S A H P 8 Data Sheet PG10608EJ02V0DS

NE3509M04 This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. T 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. U • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. O - E S A H P 9 Data Sheet PG10608EJ02V0DS

NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. T 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. 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