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Aug us t 1998 N L5503TD N lennahC- tcnie gmleoeedLc rvondoeM altLthescniieEFsfnfaErT noitpircs e lDareneG serutaeF esehT tn ec mile egedlconoenlrnmvaeaehwhlnoCep-N 4 A 6 , R .V 0 001.0 = W @V 01 = ,V dleif tceffe srotsisnart era decudorp gnisudlihcriaF 's R NO(SD 021.0 = ) W @V GS 5.4 = V . ,yrateirporp hgih llec ,ytisned SOMD .ygolonhcetsihT NO(SD ) GS yrev hgih ytisned ssecorp si yllaicepse deroliat ot cigol morf yltcerid noitarepo gniwolla stnemeriuqer evird woL eziminim etats-no ecnatsiser dna edivorp roirepus V .srevird .V2 < )HT(SG eys gldhrungepain the, sedhcntnaiawmr ogfnriehpctiws sedom noitatummoc dna ehcnalava eht ni . secived esehT ngised llec ytisned hgiH R wol ylemertxe rof )NO(SD . sa hcus snoitacilppa egatlov wol rof detius ylralucitrap era desu ylediw a ni ytilibapac gnildnah tnerruc dna rewop hgiH CD rotomlortnoc dna CD/CD noisrevnoc erehwtsaf .egakcap tnuom ecafrus ,gnihctiws wol enil-ni rewop ,ssol dna ecnatsiserot .dedeen era stneisnart SuperSOT MT -3 SuperSOT TM -6 SuperSOT TM -8 8-OS SOT-223 SOIC-16 D D D D S S D G G D S SOT-223 * G G S SOT-223 (J23Z) sgnitaR mumixaM etulosbA T 52 = deton esiwrehto soselnu C A lobmyS retemaraP N L5503TD stinU V egatloV ecruoS-niarD 06 V SSD V egatloV ecruoS-etaG suoun itnoC - ± 02 V SSG ID suounitnoC - tnerruC niarD mumixaM )a1 etoN( 4 A desluP - 52 P D mumixaM noitapissiD rewoP a1 etoN( ) 3 W 1 etoN( )b 3.1 c1 etoN( ) 1.1 T T, egnaR erutarepmeT egarotS dna gnitarepO 051 ot 56- C° J GTS SCITSIRETCARAHC LAMREHT R qAJ tneibmA-ot-noitcnuJ ,ecnatsiseR lamrehT )a1 etoN( 24 W/C° R qCJ esaC-ot-noitcnuJ ,ecnatsiseR lamrehT )1 etoN( 21 W/C° .dael niard retnec depporc rof Z32J noitpo redrO * © 1998 Fairchild Semiconductor Corporation NDT3055L Rev.A1

scitsiretcarahC lacirtcelE (T = 25 OC unless otherwise noted ) A lobmyS retemaraP snoitidnoC niM pyT xaM stinU SCITSIRETCARAHC FFO VB egatloV nwodkaerB ecruoS-niarD V I ,V 0 = Aµ 052 = 06 V SSD SG D D VB /D T tneiciffeoC .pmeT egatloV nwodkaerB I =Aµ 052 52 ot decnerefeR , o C 55 /Vm o C SSD J D I tnerruC niarD egatloV etaG oreZ V = 06 ,V V V 0 = 1 µ A SSD SD SG T 21= C°5 05 µ A J I drawroF ,egakaeL ydoB - etaG V = 02 V ,V V 0 = 001 An FSSG SG SD I esreveR ,egakaeL ydoB - etaG V - = 02 V ,V V 0 = 001- An RSSG SG SD SCITSIRETCARAHC NO 2 etoN( ) V egatloV dlohserhT etaG V V = , I Aµ 052 = 1 6.1 2 V SG )ht( SD SG D D V /D T egatloV dlohserhT etaG tneiciffeoC .pmeT I = Aµ 052 52 ot decnerefeR , oC 4- / Vm oC )ht(SG J D R ecnatsiseR-nO ecruoS-niarD citatS V 01 = ,V I 4 = A 70.0 1.0 W )NO(SD SG D T 21= C°5 521.0 81.0 J V 5.4 = ,V I 7.3 = A 301.0 21.0 SG D I tnerruC niarD etatS-nO V 5 = V , 01 = V 01 A )NO(D SG SD g ecnatcudnocsnarT drawroF V 5 = I ,V 4 = A 7 S SF SD D CIMANYD SCITSIRETCARAHC C ecnaticapaC tupnI V 52 = V , ,V 0 = 543 Fp ssi SD SG zHM 0.1 = f C ecnaticapaC tuptuO 011 Fp sso C ecnaticapaC refsnarT esreveR 03 Fp ssr HC GNIHCTIWS SCITSIRETCARA 2 etoN( ) t emiT yaleD nO - nruT V 52 = I , 1 = ,A 5 02 sn no(D ) DD D t emiT esiR nO - nruT V SG 01 = R ,V NEG 6 = W 5.7 02 sn r t emiT yaleD ffO - nruT 02 05 sn )ffo(D t emiT llaF ffO - nruT 7 02 sn f Q egrahC etaG latoT V V 04 = I , 4 = ,A 31 02 Cn g SD D V 01 = V Q egrahC ecruoS-etaG SG 7.1 Cn sg Q egrahC niarD-etaG 2.3 Cn dg SGNITAR MUMIXAM DNA SCITSIRETCARAHC EDOID ECRUOS-NIARD I tnerruC drawroF edoiD ecruoS-niarD suounitnoC mumixaM 5.2 A S V DS egatloV drawroF edoiD ecruoS-niarD V SG I ,V 0 = S5.2 = A 2 e toN( ) 8.0 2.1 V Notes: 1. R d ese nahe it csfnieedsr elfaemr r eeeesh rhateetcchnwats ilsaemr rtenhetibma-ot- eedssnaaacc-ot-no i tsem cihufentsohutj e cfa ofgr nuist n rueodml o . s n nieiahprtd R is qAJ qJC deetnaraug R elihw ngised yb .ngised draob s'resu eht yb denimreted si qAC .a24 o dneotn uno emWh/wC a 1 ni 2 pad of b59 . o no detnuom nehw W/C 660.0 a ni 2 .c 011 o no detnuom nehw W/C 32100.0 a uC zo2 . C2uoopzfa d . ni 2C2uoopzfa d . repap ezis rettel no 1 : 1 elacS .2 htdiW esluP :tseT esluP <µ003 elcyC ytuD ,s < %0.2 NDT3055L Rev.A1

scitsiret claarcaih rCltacceilpEyT 52 2 V =10V SG 6.0V 02 5.0V 8.1 V = 4.0V SG 4.5V 6.1 51 V5. 4 4. 0V 4.1 V0. 5 01 V0. 6 3.5V 2.1 V0. 8 V0 1 5 DS(ON) 3.0V R , NORMALIZED 1 I , DRAIN-SOURCE CURRENT (A)D DRAIN-SOURCE ON-RESISTANCE 0 8.0 0 1 2 3 4 5 0 5 01 51 02 52 (DVR)AVIONL-TSAOGUE,R CE V SD )A( TNERRUC NIARD , ID Figure 1. On-Region Characteristics . Figure 2. On-Resistance Variation with niarD tnerruC dna etaGegatloV . 8.1 0.28 I = 4.0 AD 0.24 I =A2D 6.1 V = 10 V GS 0.2 4.1 0.16 2.1 CT °5 2=1 A 0.12 1 0.08 DS(ON) C °52 R , NORMALIZED 8.0 0.04 DS(ON) DRAIN-SOURCE ON-RESISTANCE6.0 05- 52- 0 52 05 57 001 521 051 R , ON-RESISTANCE (OHM) 0 2 4 6 8 10 )C°( ERUTAREPMET NOITCNUJ , T J V, G ATET OS OURCEV OLTAGE( V)SG Figure 3. On-Resistance Variation erugiF4 . ecnatsiseR-nO Variation with with Temperature . Gate-to - ecruoS.egatloV 01 03 V = 5V DS T =C°55-J 25°C 01 V = 0V SG 8 125°C 1 T= 1 25°CA 6 1.0 25°C -55 °C 4 10.0 I , DRAIN CURRENT (A)D 2 100.0 I , REVERSE DRAIN CURRENT (A)S 0 1000.0 1 5.1 2 5.2 3 5.3 4 5.4 5 0 2.0 4.0 6.0 8.0 1 2.1 4.1 )V( EGATLOV ECRUOS OT ETAG , V GS )V( EGATLOV DRAWROF EDOID YDOB , V SD erugiF 5 . Transfer Characteristics. erugiF6 ega tdlro aV w.er do yoFdioDB noitairaV htiw tnerruC dna Temperature. NDT3055L Rev.A1

Typical Electrical scitsiretcarahC (continued) 0001 01 I A=4D V = 10V SD 005 8 V03 C ssi V04 002 6 C sso 001 4 05 C ssr 2 CAPACITANCE (pF) zHM 1 = f 02 V 0 =V SG V , GATE-SOURCE VOLTAGE (V)GS 0 01 0 2 4 6 8 01 21 41 1.0 3.0 1 4 01 03 06 )Cn( EGRAHC ETAG , Q g )V( EGATLOV ECRUOS OT NIARD , V SD erugiF7 . Gate Charge Characteristics. Figure 8. ecnaticapaCscitsiretcarahC . 05 08 100us SINGLE PULSE 01 TIM I)LNO(SDR 1ms 06 R =110°C/W qAJ 3 10ms T C °=52 A 1 100ms 1s 04 0.3 10s DC 0.1 V = 10V GS POWER (W) SINGLE PULSE 02 I , DRAIN CURRENT (A)D30.0 R = 110 C/W qAJ o T = 25°C A 10.0 0 1.0 0.2 0.5 1 2 5 01 03 06 001 100.0 10.0 1.0 1 01 001 003 )V( EGATLOV ECRUOS-NIARD , V DS )CES( EMIT ESLUP ELGNIS Figure 9. Maximum Safe Operating Area. erugiF01 . Single Pulse Maximum Power Dissipation. 1 5.0 D=0 .5 2.0 0 . 2 1.0 0 .1 R (t) = r(t) * R qJA qAJ 50.0 0.0 5 = R1 10° C/W qAJ 20.0 0.0 2 P(pk) 10.0 0.0 1 500.0 t 1 t 2 r(t), NORMALIZED EFFECTIVE 200.0 Si nglPeu lse T- T = P * R ( t)J A qAJ Duty Cycle, D = t / t TRANSIENT THERMAL RESISTANCE 100.0 1 2 1000.0 100.0 10.0 1.0 1 01 001 003 )ces( EMIT , t1 erugiF11 . tneisnarT lamrehT esnopseRevruC . c1 eton ni debircsed snoitidnoc eht gnisu demrofrep noitaziretcarahc lamrehT . lamreht tneisnarT .ngised draob tiucric eht no gnidneped egnahc lliw esnopser NDT3055L Rev.A1

6.70 B 6.20 0.10 C B 3.10 2.90 3.25 4 1.90 A 3.70 6.10 3.30 1.90 1 3 0.84 0.60 2.30 0.95 2.30 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX 0.08 C 7.30 C 0.10 6.70 0.00 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. R0.15±0.05 10° C) DIMENSIONS DO NOT INCLUDE BURRS GAGE 5° OR MOLD FLASH. MOLD FLASH OR BURRS R0.15±0.05 DOES NOT EXCEED 0.10MM. PLANE D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. 0.35 10° E) LANDPATTERN NAME: SOT230P700X180-4BN 0° TYP 0.20 F) DRAWING FILENAME: MKT-MA04AREV3 0.25 10° 5° 0.60 MIN SEATING 1.70 PLANE DETAIL A SCALE: 2:1

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