NDF08N50Z N-Channel Power MOSFET 500 V, 0.85 (cid:2) Features • Low ON Resistance • Low Gate Charge • www.onsemi.com ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS VDSS RDS(ON) (MAX) @ 3.6 A Compliant 500 V 0.85 (cid:4) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) N−Channel Rating Symbol NDF08N50Z Unit D (2) Drain−to−Source Voltage VDSS 500 V Continuous Drain Current R(cid:2)JC (Note 1) ID 8.5 A Continuous Drain Current R(cid:2)JC ID 5.4 A TA = 100°C (Note 1) G (1) Pulsed Drain Current, IDM 34 A VGS @ 10 V Power Dissipation PD 35 W S (3) Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = EAS 190 mJ MARKING 7.5 A DIAGRAM ESD (HBM) Vesd 3500 V (JESD 22−A114) RMS Isolation Voltage VISO 4500 V (t = 0.3 sec., R.H. ≤ 30%, NDF08N50ZG, NDF08N50ZH TA = 25°C) (Figure 14) TO−220FP NDF08N50ZG or Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns CASE 221AH NDF08N50ZH MOSFET dV/dt dV/dt 60 V/ns AYWW Continuous Source Current (Body IS 7.5 A Gate Source Diode) Maximum Temperature for Soldering TL 260 °C Leads Drain Operating Junction and TJ, Tstg −55 to 150 °C A = Location Code Storage Temperature Range Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be G, H = Pb−Free, Halogen−Free Package assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. ISD = 7.5 A, di/dt ≤ 100 A/(cid:3)s, VDD ≤ BVDSS, TJ = +150°C ORDERING INFORMATION Device Package Shipping NDF08N50ZG TO−220FP 50 Units / Rail (Pb−Free, Halogen−Free) NDF08N50ZH TO−220FP 50 Units / Rail (Pb−Free, Halogen−Free) © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 − Rev. 6 NDF08N50Z/D

NDF08N50Z THERMAL RESISTANCE Parameter Symbol NDF08N50Z Unit Junction−to−Case (Drain) R(cid:2)JC 3.6 °C/W Junction−to−Ambient Steady State (Note 3) R(cid:2)JA 50 3. Insertion mounted ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BVDSS 500 V Breakdown Voltage Temperature Co- Reference to 25°C, (cid:5)BVDSS/ 0.6 V/°C efficient ID = 1 mA (cid:5)TJ Drain−to−Source Leakage Current 25°C IDSS 1 (cid:3)A VDS = 500 V, VGS = 0 V 150°C 50 Gate−to−Source Forward Leakage VGS = ±20 V IGSS ±10 (cid:3)A ON CHARACTERISTICS (Note 4) Static Drain−to−Source VGS = 10 V, ID = 3.6 A RDS(on) 0.69 0.85 (cid:4) On−Resistance Gate Threshold Voltage VDS = VGS, ID = 100 (cid:3)A VGS(th) 3.0 3.9 4.5 V Forward Transconductance VDS = 15 V, ID = 3.75 A gFS 6.0 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) Ciss 730 912 1095 pF Output Capacitance (Note 5) VDS = 25 V, VGS = 0 V, Coss 95 120 140 f = 1.0 MHz Reverse Transfer Capacitance Crss 15 27 35 (Note 5) Total Gate Charge (Note 5) Qg 16 31 46 nC Gate−to−Source Charge (Note 5) Qgs 3 6.2 9 VDD = 250 V, ID = 7.5 A, Gate−to−Drain (“Miller”) Charge VGS = 10 V Qgd 8 17 25 (Note 5) Plateau Voltage VGP 6.3 V Gate Resistance Rg 3.0 (cid:4) RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time td(on) 13 ns Rise Time VDD = 250 V, ID = 7.5 A, tr 23 Turn−Off Delay Time VGS = 10 V, RG = 5 (cid:4) td(off) 31 Fall Time tf 29 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 7.5 A, VGS = 0 V VSD 1.6 V Reverse Recovery Time VGS = 0 V, VDD = 30 V trr 295 ns Reverse Recovery Charge IS = 7.5 A, di/dt = 100 A/(cid:3)s Qrr 1.85 (cid:3)C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width ≤380 (cid:3)s, Duty Cycle ≤ 2%. 5. Guaranteed by design. www.onsemi.com 2

NDF08N50Z TYPICAL CHARACTERISTICS 20.0 20.0 18.0 18.0 VDS = 25 V 8.0 V A) 16.0 A)16.0 T ( 14.0 T (14.0 REN 12.0 VGS = 10 V 7.0 V REN12.0 R 6.5 V R U 10.0 U10.0 C C N 8.0 N 8.0 RAI 6.0 V RAI TJ = 25°C D 6.0 D 6.0 , D 4.0 , D 4.0 TJ = 150°C I 5.5 V I TJ = −55°C 2.0 2.0 5.0 V 0.0 0.0 0.0 5.0 10.0 15.0 20.0 25.0 3 4 5 6 7 8 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:4)E () 1.00 (cid:4)CE ()1.00 ESISTANC 00..9905 TIDJ == 32.56° CA RESISTAN000...899505 VTGJS = = 2 150°C V E R CE 0.80 C 0.85 R UR OU0.75 SO 0.80 −S0.70 − O O T T 0.75 −0.65 − N AIN RAI0.60 R 0.70 D , DDS(on) 0.655.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 R, DS(on)00..55050.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 R VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate−to−Source Figure 4. On−Resistance versus Drain Voltage Current and Gate Voltage V) E ( 2.75 G1.15 NCE 2.50 ID = 3.6 A LTA ID = 1 mA SISTA 2.25 VGS = 10 V WN VO1.10 E 2.00 R O OURCE ALIZED)11..5705 BREAKD1.05 O−SRM1.25 ED 1.00 TO1.00 Z −N LI N( A AI 0.75 M0.95 R R D 0.50 O , on) 0.25 , NS0.90 DS( −50 −25 0 25 50 75 100 125 150 DS −50 −25 0 25 50 75 100 125 150 R V TJ, JUNCTION TEMPERATURE (°C) B TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Figure 6. BV Variation with Temperature DSS Temperature www.onsemi.com 3

NDF08N50Z TYPICAL CHARACTERISTICS 10 2000 1800 TJ = 25°C (cid:3)GE (A) TJ = 150°C NCE (pF) 111246000000 Vf =G S1 =M 0H Vz KA 1.0 TA 1000 Ciss , LEASS TJ = 125°C CAPACI 680000 ID C, 400 200 Coss Crss 0.10 0 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40 45 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Drain−to−Source Leakage Current Figure 8. Capacitance Variation versus Voltage V) 15.0 300 V) E ( 14.0 QT E ( OLTAG 111123...000 250 OLTAG URCE V 1890...000 VDS VGS 125000 URCE V TO−SO 567...000 QGS QGD 100 TO−SO ATE− 34..00 VIDDS = = 7 2.55 0A V 50 RAIN− , GGS 12..00 TJ = 25°C , DDS V 0.0 0 V 0 4 8 12 16 20 24 28 32 Qg, TOTAL GATE CHARGE (nC) Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge 1000 10.0 VDD = 250 V ID = 7.5 A A) s) 100 VGS = 10 V ttdr(off) RENT ( TJ = 150°C ME (n ttdf(on) CUR 1.0 125°C t, TI 10 URCE 25°C O S −55°C , S I 1.0 0.1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE ((cid:4)) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Resistive Switching Time Variation Figure 11. Diode Forward Voltage versus versus Gate Resistance Current www.onsemi.com 4

NDF08N50Z TYPICAL CHARACTERISTICS 100 VGS (cid:2) 30 V 100 (cid:3)s10 (cid:3)s SINGLE PULSE A) 10 TC = 25°C 1 ms T ( N E 10 ms R R dc U 1 C N AI R D I, D 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Maximum Rated Forward Biased Safe Operating Area NDF08N50Z 10 50% (DUTY CYCLE) W) 1 20% C/ R(t) ( 51.00%% 0.1 2.0% 1.0% R(cid:2)JC = 3.6°C/W Steady State SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (s) Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N50Z LEADS HEATSINK 0.110″ MIN Figure 14. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5

NDF08N50Z PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A B SPELAATNIENG NO1T.EDSI:MENSIONING AND TOLERANCING PER ASME E Y14.5M, 1994. A E/2 P 2.CONTROLLING DIMENSION: MILLIMETERS. 0.14 M B A M H1 A1 34..CDOIMNETNOSUIORN USN DC OANNTDR EO DLLOE NDO INT ITNHCISLU ADREE MA.OLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. D C 5.DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 1 2 3 NOTE 3 6.CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. L L1 MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 3Xb c A2 2.50 2.90 3X b2 0.25 M B A M C A2 bb2 10..1504 10..4804 c 0.49 0.79 e SIDE VIEW D 14.70 15.30 FRONT VIEW E 9.70 10.30 e 2.54 BSC H1 6.60 7.10 L 12.50 14.73 L1 --- 2.80 P 3.00 3.40 SECTION D−D Q 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com pubnumber/D 6