NCP583 Ultra-Low Iq 150 mA CMOS LDO Regulator with Enable The NCP583 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy and low quiescent current. These devices feature an enable function which lowers current consumption significantly and www.onsemi.com are offered in two small packages; SC−82AB and the SOT−563. A 1.0 (cid:2)F ceramic capacitor is the recommended value to be used MARKING with these devices on the output pin. DIAGRAMS Features • SC−82AB • Ultra−Low Dropout Voltage of 250 mV at 150 mA 4 SQ SUFFIX XXTT Excellent Line Regulation of 0.05%/V CASE 419C • Excellent Load Regulation of 20 mV 1 1 • High Output Voltage Accuracy of (cid:2)2% • Ultra−Low Iq Current of 1.0 (cid:2)A • Very Low Shutdown Current of 0.1 (cid:2)A SOT−563 XXX • 6 XV SUFFIX Wide Output Voltage Range of 1.5 V to 3.3 V XTT • 1 CASE 463A Low Temperature Drift Coefficient on the Output Voltage of 1 (cid:2)100 ppm/°C • X = Device Code Fold Back Protection Circuit T = Traceability Information • Input Voltage up to 6.5 V • These are Pb−Free Devices ORDERING INFORMATION Typical Applications See detailed ordering and shipping information in the package • Portable Equipment dimensions section on page 8 of this data sheet. • Hand−Held Instrumentation • Camcorders and Cameras Vin Vout - + Vref Current Limit CE GND Figure 1. Simplified Block Diagram © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2016 − Rev. 15 NCP583/D

NCP583 PIN FUNCTION DESCRIPTION SOT−563 Pin SC−82AB Pin Symbol Description 1 4 Vin Power supply input voltage. 2 2 GND Power supply ground. 3 3 Vout Regulated output voltage. 4 − NC No connect. 5 − GND Power supply ground. 6 1 CE Chip enable pin. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin 6.5 V Input Voltage (CE Pin) VCE 6.5 V Output Voltage Vout −0.3 to Vin +0.3 V Output Current Iout 180 mA Thermal Junction Resistance R(cid:3)JA °C/W SC−82AB 263 SOT−563 200 ESD Capability, Human Body Model, C = 100 pF, R = 1.5 k(cid:4) ESDHBM 2000 V ESD Capability, Machine Model, C = 200 pF, R = 0 (cid:4) ESDMM 200 V Operating Ambient Temperature Range TA −40 to +85 °C Maximum Junction Temperature TJ(max) 125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (Vin = Vout + 1.0 V, TA = −40°C to +85°C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Input Voltage Vin 1.7 − 6.0 V Output Voltage (1.0 (cid:2)A ≤ Iout ≤ 30 mA) Vout Vout x 0.98 − Vout x 1.02 V Line Regulation (Iout = 30 mA) Regline − 0.05 0.20 %/V (Vout + 0.5 V (cid:3) Vin (cid:3) 6.0 V) Load Regulation (1.0 (cid:2)A ≤ Iout ≤ 150 mA) Regload − 20 40 mV Dropout Voltage (Iout = 150 mA) VDO V Vout = 1.5 V − 0.60 0.90 1.7 V (cid:3) Vout (cid:3) 1.9 V − 0.50 0.75 2.1 V (cid:3) Vout (cid:3) 2.7 V − 0.35 0.55 2.8 V (cid:3) Vout (cid:3) 3.3 V − 0.25 0.40 Quiescent Current (Iout = 0 mA) Iq − 1.0 1.5 (cid:2)A Output Current Iout 150 − − mA Shutdown Current (VCE = Gnd) ISD − 0.1 1.0 (cid:2)A Output Short Circuit Current (Vout = 0) Ilim − 40 − mA Enable Input Threshold Voltage − High Vthenh 1.2 − 6.0 V Enable Input Threshold Voltage − Low Vthenl 0 − 0.3 Output Voltage Temperature Coefficient (cid:5)Vout/(cid:5)T − ±100 − ppm/°C (Iout = 30 mA, −40°C ≤ TA ≤ 85°C) www.onsemi.com 2

NCP583 TYPICAL CHARACTERISTICS 3.0 2.9 2.8 GE V(V) out 22..50 Vin = 3.1 V GE V(V) out 22..76 UT VOLTA 11..50 3.3 V3.5 V UT VOLTA 222...543 Iout = 1.0 mA UTP UTP 2.2 Iout = 30 mA O 0.5 O Iout = 50 mA Vout = 2.8 V 2.1 Vout = 2.8 V 0 2.0 0 100 200 300 400 500 1.0 2.0 3.0 4.0 5.0 6.0 OUTPUT CURRENT Iout (mA) INPUT VOLTAGE Vin (V) Figure 2. Output Voltage vs. Output Current Figure 3. Output Voltage vs. Input Voltage 1.2 2.86 (cid:2)(A) q 1.0 (V) ut2.84 RENT, I 0.8 GE, Vo2.82 UR 0.6 LTA 2.80 C O T V EN 0.4 UT 2.78 C P S T E U UI 0.2 O 2.76 Q Vout = 2.8 V Vout = 2.8 V 0.0 2.74 0 1.0 2.0 3.0 4.0 5.0 6.0 −40 −15 10 35 60 85 INPUT VOLTAGE Vin (V) TEMPERATURE (°C) Figure 4. Quiescent Current vs. Input Voltage Figure 5. Output Voltage vs. Temperature 1.4 1.4 A) 1.2 A) 1.2 (cid:2) (cid:2) T, I( q 1.0 T, I( q1.0 N N E E R 0.8 R 0.8 R R U U T C 0.6 T C 0.6 N N E E C 0.4 C 0.4 S S E E UI 0.2 UI 0.2 Q Q Vout = 1.5 V Vout = 2.8 V 0.0 0.0 −40 −15 10 35 60 85 −40 −15 10 35 60 85 TEMPERATURE (°C) TEMPERATURE (°C) Figure 6. Quiescent Current vs. Temperature Figure 7. Quiescent Current vs. Temperature www.onsemi.com 3

NCP583 TYPICAL CHARACTERISTICS 1.0 0.40 0.9 Vout = 1.5 V 85°C V) V)0.35 ( O 0.8 ( O VD 0.7 25°C VD0.30 85°C GE, 0.6 GE, 0.25 25°C TA −40°C TA L 0.5 L0.20 O O T V 0.4 T V0.15 −40°C U U O 0.3 O P P0.10 O 0.2 O R R D D0.05 0.1 Vout = 1.8 V 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 150 OUTPUT CURRENT Iout (mA) OUTPUT CURRENT Iout (mA) Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current 0.40 70 V) 0.35 Vout = 2.8 V V( DO0.30 R (dB) 60 VCionu =t = 3 .08. 1V (cid:2) +F 0.5 Vp−p GE, 0.25 85°C N, R 50 TA 25°C O 40 L 0.20 TI O C V E UT 0.15 EJ 30 OPO 0.10 −40°C LE R 20 Iout = 1.0 mA DR 0.05 RIPP 10 Iout = 30 mA 0.00 Vout = 2.8 V Iout = 50 mA 0 0 25 50 75 100 125 150 0.1 1 10 100 OUTPUT CURRENT Iout (mA) FREQUENCY, f (kHz) Figure 10. Dropout Voltage vs. Output Current Figure 11. Ripple Rejection vs. Frequency 70 Vout = 2.8 V B) 60 Vin = 3.8 V + 0.5 Vp−p R (d Cout = 1.0 (cid:2)F R 50 N, O TI 40 C E J 30 E R Iout = 1.0 mA E L 20 P RIP 10 Iout = 30 mA Iout = 50 mA 0 0.1 1 10 100 FREQUENCY, f (kHz) Figure 12. Ripple Rejection vs. Frequency www.onsemi.com 4

NCP583 TYPICAL CHARACTERISTICS C = 0.1 (cid:2)F out 5.5 6 V) 5.0 5 GE, V (out 44..50 Input Voltage 43 GE, V (V)in OLTA 3.5 2 OLTA UTPUT V 3.0 Output Voltage 1 NPUT V O I 2.5 0 2.0 −1 0 20 40 60 80 100 120 140 160 180 200 TIME, T ((cid:2)s) C = 0.47 (cid:2)F out 5.5 6 V) 5.0 5 GE, V (out 44..50 Input Voltage 43 GE, V (V)in OLTA 3.5 2 OLTA UTPUT V 3.0 Output Voltage 1 NPUT V O I 2.5 0 2.0 −1 0 20 40 60 80 100 120 140 160 180 200 TIME, T ((cid:2)s) C = 1.0 (cid:2)F out 5.5 6 V) 5.0 5 GE, V (out 44..50 Input Voltage 43 GE, V (V)in OLTA 3.5 2 OLTA UTPUT V 3.0 Output Voltage 1 NPUT V O I 2.5 0 2.0 −1 0 20 40 60 80 100 120 140 160 180 200 TIME, T ((cid:2)s) Figure 13. Input Transient Response (V = 2.8 V, I = 30 mA, tr = tf = 5.0 (cid:2)s, C = 0) out out in www.onsemi.com 5

NCP583 TYPICAL CHARACTERISTICS C = 1.0 (cid:2)F out 5.0 20 (V)out 4.5 Output Current 10 (mA)ut E, V 4.0 0 T, Io G N A E T 3.5 −10R L R O U UT V 3.0 Output Voltage UT C UTP UTP O 2.5 O 2.0 0 100 200 300 400 500 600 700 800 900 1000 TIME, T ((cid:2)s) C = 10 (cid:2)F out 5.0 20 (V)out 4.5 Output Current 10 (mA)ut E, V 4.0 0 T, Io G N A E T 3.5 −10R L R O U V C UT 3.0 Output Voltage UT UTP UTP O 2.5 O 2.0 0 100 200 300 400 500 600 700 800 900 1000 TIME, T ((cid:2)s) Figure 14. Load Transient Response (V = 2.8 V, tr = tf = 5.0 (cid:2)s, V = 3.8 V) out in www.onsemi.com 6

NCP583 TYPICAL CHARACTERISTICS C = 0.1 (cid:2)F out 5.0 150 (V)out 4.5 Output Current 100 (mA)ut E, V 4.0 50 T, Io G N A E T 3.5 0 R L R O U UT V 3.0 Output Voltage UT C UTP UTP O 2.5 O 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T ((cid:2)s) C = 0.47 (cid:2)F out 5.0 150 (V)out 4.5 Output Current 100 (mA)ut E, V 4.0 50 T, Io G N A E T 3.5 0 R L R O U UT V 3.0 Output Voltage UT C UTP UTP O 2.5 O 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T ((cid:2)s) C = 1.0 (cid:2)F out 5.0 150 (V)out 4.5 Output Current 100 (mA)ut E, V 4.0 50 T, Io G N A E T 3.5 0 R L R O U UT V 3.0 Output Voltage UT C UTP UTP O 2.5 O 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T ((cid:2)s) Figure 15. Load Transient Response (V = 2.8 V, tr = tf = 5.0 (cid:2)s, V = 3.8 V) out in www.onsemi.com 7

NCP583 APPLICATION INFORMATION Input Decoupling Output Decoupling A 1.0 (cid:2)F ceramic capacitor is the recommended value to It is recommended to use a 0.1 (cid:2)F ceramic capacitor on be connected between V and GND. For PCB layout the V pin. For better performance, select a capacitor with in out considerations, the traces of V and GND should be low Equivalent Series Resistance (ESR). For PCB layout in sufficiently wide in order to minimize noise and prevent considerations, place the output capacitor close to the unstable operation. output pin and keep the leads short as possible. ORDERING INFORMATION Nominal Device Output Type / Features Output Voltage Marking Package Shipping† NCP583SQ15T1G Active High w/Enable 1.5 A5 SC−82AB 3000 / Tape & Reel (Pb−Free) NCP583SQ18T1G Active High w/Enable 1.8 A8 SC−82AB 3000 / Tape & Reel (Pb−Free) NCP583SQ25T1G Active High w/Enable 2.5 B5 SC−82AB 3000 / Tape & Reel (Pb−Free) NCP583SQ27T1G Active High w/Enable 2.7 B7 SC−82AB 3000 / Tape & Reel (Pb−Free) NCP583SQ28T1G Active High w/Enable 2.8 B8 SC−82AB 3000 / Tape & Reel (Pb−Free) NCP583SQ30T1G Active High w/Enable 3.0 C0 SC−82AB 3000 / Tape & Reel (Pb−Free) NCP583SQ33T1G Active High w/Enable 3.3 C3 SC−82AB 3000 / Tape & Reel (Pb−Free) NCP583XV15T2G Active High w/Enable 1.5 G15B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV18T2G Active High w/Enable 1.8 G18B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV25T2G Active High w/Enable 2.5 G25B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV26T2G Active High w/Enable 2.6 G26B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV28T2G Active High w/Enable 2.8 G28B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV29T2G Active High w/Enable 2.9 G29B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV30T2G Active High w/Enable 3.0 G30B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV31T2G Active High w/Enable 3.1 G31B SOT−563 4000 / Tape & Reel (Pb−Free) NCP583XV33T2G Active High w/Enable 3.3 G33B SOT−563 4000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Other voltages are available. Consult your ON Semiconductor representative. www.onsemi.com 8

NCP583 PACKAGE DIMENSIONS SOT−563 XV SUFFIX CASE 463A ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. D A 2. CONTROLLING DIMENSION: MILLIMETERS −X− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD L FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 6 5 4 MILLIMETERS INCHES −YE− HE DAIM 0M.5IN0 N0.O5M5 M0.A60X 0.M02IN0 0N.0O2M1 0M.0A23X 1 2 3 b 0.17 0.22 0.27 0.007 0.009 0.011 C 0.08 0.12 0.18 0.003 0.005 0.007 D 1.50 1.60 1.70 0.059 0.062 0.066 b 65 PL C E 1.10 1.20 1.30 0.043 0.047 0.051 e e 0.5 BSC 0.02 BSC 0.08 (0.003) M X Y L 0.10 0.20 0.30 0.004 0.008 0.012 HE 1.50 1.60 1.70 0.059 0.062 0.066 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 1.35 0.0394 0.0531 0.5 0.5 0.0197 0.0197 (cid:4) (cid:5) mm SCALE 20:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9

NCP583 PACKAGE DIMENSIONS SC−82AB SQ SUFFIX CASE 419C−02 ISSUE F NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. G 2. CONTROLLING DIMENSION: MILLIMETER. C 3. 419C−01 OBSOLETE. NEW STANDARD IS D3 PL N 419C−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 4 3 MILLIMETERS INCHES S B K DIM MIN MAX MIN MAX A 1.80 2.20 0.071 0.087 1 2 B 1.15 1.35 0.045 0.053 C 0.80 1.10 0.031 0.043 D 0.20 0.40 0.008 0.016 H F F 0.30 0.50 0.012 0.020 J G 1.10 1.50 0.043 0.059 L 0.05 (0.002) H 0.00 0.10 0.000 0.004 J 0.10 0.26 0.004 0.010 K 0.10 −−− 0.004 −−− L 0.05 BSC 0.002 BSC N 0.20 REF 0.008 REF S 1.80 2.40 0.07 0.09 SOLDERING FOOTPRINT* 1.30 0.0512 0.65 0.026 1.90 0.075 0.95 0.037 0.90 0.035 (cid:4) (cid:5) 0.70 mm SCALE 10:1 0.028 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com NCP583/D 10

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: NCP583SQ15T1G NCP583SQ18T1G NCP583SQ25T1G NCP583SQ28T1G NCP583SQ30T1G NCP583SQ33T1G NCP583XV15T2G NCP583XV18T2G NCP583XV25T2G NCP583XV28T2G NCP583XV29T2G NCP583XV30T2G NCP583XV33T2G NCP583XV26T2G NCP583XV31T2G