128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A Features • Write protection – Software write protection applicable to every • SPI-compatible serial bus interface 64KB sector via volatile lock bit • 108 MHz (MAX) clock frequency – Hardware write protection: protected area size • 2.7–3.6V single supply voltage defined by five nonvolatile bits (BP0, BP1, BP2, • Dual/quad I/O instruction provides increased BP3, and TB) throughput up to 432 MHz – Additional smart protections, available upon re- • Supported protocols quest – Extended SPI, dual I/O, and quad I/O • Electronic signature • Execute-in-place (XIP) mode for all three protocols – JEDEC-standard 2-byte signature (BA18h) – Configurable via volatile or nonvolatile registers – Unique ID code (UID): 17 read-only bytes, in- – Enables memory to work in XIP mode directly af- cluding: ter power-on • Two additional extended device ID (EDID) • PROGRAM/ERASE SUSPEND operations bytes to identify device factory options • Continuous read of entire memory via a single com- mand • Customized factory data (14 bytes) – Fast read • Minimum 100,000 ERASE cycles per sector – Quad or dual output fast read • More than 20 years data retention – Quad or dual I/O fast read • Packages JEDEC standard, all RoHS compliant • Flexible to fit application – F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x – Configurable number of dummy cycles 5mm) – Output buffer configurable – F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm) • Software reset – 12 = T-PBGA-24b05 6mm x 8mm • 64-byte, user-lockable, one-time programmable – 14 = T-PBGA-24b05 6mm x 8mm, 4x6 ball array (OTP) dedicated area – SF = SOP2-16 300 mils body width (SO16W) • Erase capability – SE = SOP2-8 208 mils body width (SO8W) – Subsector erase 4KB uniform granularity blocks – Sector erase 64KB uniform granularity blocks – Full-chip erase 09005aef845665fe 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

128Mb, 3V, Multiple I/O Serial Flash Memory Features Contents Important Notes and Warnings ......................................................................................................................... 6 Device Description ........................................................................................................................................... 7 Features ....................................................................................................................................................... 7 Operating Protocols ...................................................................................................................................... 7 XIP Mode ..................................................................................................................................................... 7 Device Configurability .................................................................................................................................. 8 Signal Assignments ........................................................................................................................................... 9 Signal Descriptions ......................................................................................................................................... 11 Memory Organization .................................................................................................................................... 13 Memory Configuration and Block Diagram .................................................................................................. 13 Memory Map – 128Mb Density ....................................................................................................................... 14 Device Protection ........................................................................................................................................... 15 Serial Peripheral Interface Modes .................................................................................................................... 17 SPI Protocols .................................................................................................................................................. 20 Nonvolatile and Volatile Registers ................................................................................................................... 21 Status Register ............................................................................................................................................ 22 Nonvolatile and Volatile Configuration Registers .......................................................................................... 23 Enhanced Volatile Configuration Register .................................................................................................... 26 Flag Status Register ..................................................................................................................................... 27 Command Definitions .................................................................................................................................... 29 READ REGISTER and WRITE REGISTER Operations ........................................................................................ 31 READ STATUS REGISTER or FLAG STATUS REGISTER Command ................................................................ 31 READ NONVOLATILE CONFIGURATION REGISTER Command ................................................................... 31 READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command .................................. 32 WRITE STATUS REGISTER Command ......................................................................................................... 32 WRITE NONVOLATILE CONFIGURATION REGISTER Command ................................................................. 33 WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command ................................. 33 READ LOCK REGISTER Command .............................................................................................................. 34 WRITE LOCK REGISTER Command ............................................................................................................ 35 CLEAR FLAG STATUS REGISTER Command ................................................................................................ 36 READ IDENTIFICATION Operations ............................................................................................................... 37 READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 37 READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 38 READ MEMORY Operations ............................................................................................................................ 41 PROGRAM Operations .................................................................................................................................... 45 WRITE Operations .......................................................................................................................................... 49 WRITE ENABLE Command ......................................................................................................................... 49 WRITE DISABLE Command ........................................................................................................................ 49 ERASE Operations .......................................................................................................................................... 51 SUBSECTOR ERASE Command ................................................................................................................... 51 SECTOR ERASE Command ......................................................................................................................... 51 BULK ERASE Command ............................................................................................................................. 52 PROGRAM/ERASE SUSPEND Command ..................................................................................................... 53 PROGRAM/ERASE RESUME Command ...................................................................................................... 55 ONE TIME PROGRAMMABLE Operations ....................................................................................................... 56 READ OTP ARRAY Command ...................................................................................................................... 56 PROGRAM OTP ARRAY Command .............................................................................................................. 56 XIP Mode ....................................................................................................................................................... 58 Activate or Terminate XIP Using Volatile Configuration Register ................................................................... 58 Activate or Terminate XIP Using Nonvolatile Configuration Register ............................................................. 58 09005aef845665fe 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. 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128Mb, 3V, Multiple I/O Serial Flash Memory Features Confirmation Bit Settings Required to Activate or Terminate XIP .................................................................. 59 Terminating XIP After a Controller and Memory Reset ................................................................................. 59 Power-Up and Power-Down ............................................................................................................................ 60 Power-Up and Power-Down Requirements .................................................................................................. 60 Power Loss Rescue Sequence ...................................................................................................................... 61 AC Reset Specifications ................................................................................................................................... 62 Absolute Ratings and Operating Conditions ..................................................................................................... 67 DC Characteristics and Operating Conditions .................................................................................................. 69 AC Characteristics and Operating Conditions – Standard ................................................................................. 70 AC Characteristics and Operating Conditions – Enhanced ................................................................................ 71 Package Dimensions ....................................................................................................................................... 73 Part Number Ordering Information ................................................................................................................. 79 Revision History ............................................................................................................................................. 81 Rev. T – 02/2018 .......................................................................................................................................... 81 Rev. S – 11/2014 .......................................................................................................................................... 81 Rev. R - 07/2014 .......................................................................................................................................... 81 Rev. Q – 05/2014 ......................................................................................................................................... 81 Rev. P – 06/2013 .......................................................................................................................................... 81 Rev. O – 04/2013 ......................................................................................................................................... 81 Rev. N – 01/2013 ......................................................................................................................................... 81 Rev. M – 07/2012 ........................................................................................................................................ 81 Rev. L – 06/2012 .......................................................................................................................................... 81 Rev. K – 02/2012 ......................................................................................................................................... 81 Rev. J – 12/2011 .......................................................................................................................................... 81 Rev. I – 10/2011 .......................................................................................................................................... 82 Rev. H – 08/2011 ......................................................................................................................................... 82 Rev. G – 08/2011 ......................................................................................................................................... 82 Rev. F – 02/2011 .......................................................................................................................................... 82 Rev. E – 01/2011 .......................................................................................................................................... 82 Rev. D – 10/2010 ......................................................................................................................................... 82 Rev. C – 02/2010 ......................................................................................................................................... 82 Rev. B – 05/2009 ......................................................................................................................................... 82 Rev. A – 01/2009 .......................................................................................................................................... 82 09005aef845665fe 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Features List of Figures Figure 1: Logic Diagram ................................................................................................................................... 8 Figure 2: 8-Pin, VDFPN8 – MLP8 and SOP2 – SO8W (Top View) ......................................................................... 9 Figure 3: 16-Pin, Plastic Small Outline – SO16 (Top View) .................................................................................. 9 Figure 4: 24-Ball TBGA (Balls Down) .............................................................................................................. 10 Figure 5: 24-Ball TBGA , 4x6 (Balls Down) ....................................................................................................... 10 Figure 6: Block Diagram ................................................................................................................................ 13 Figure 7: Bus Master and Memory Devices on the SPI Bus ............................................................................... 18 Figure 8: Bus Master and Memory Devices on the SPI Bus ............................................................................... 19 Figure 9: SPI Modes ....................................................................................................................................... 19 Figure 10: Internal Configuration Register ...................................................................................................... 21 Figure 11: READ REGISTER Command .......................................................................................................... 31 Figure 12: WRITE REGISTER Command ......................................................................................................... 33 Figure 13: READ LOCK REGISTER Command ................................................................................................. 35 Figure 14: WRITE LOCK REGISTER Command ............................................................................................... 36 Figure 15: READ ID and MULTIPLE I/O Read ID Commands .......................................................................... 38 Figure 16: READ Command ........................................................................................................................... 42 Figure 17: FAST READ Command ................................................................................................................... 42 Figure 18: DUAL OUTPUT FAST READ ........................................................................................................... 43 Figure 19: DUAL INPUT/OUTPUT FAST READ Command .............................................................................. 43 Figure 20: QUAD OUTPUT FAST READ Command ......................................................................................... 44 Figure 21: QUAD INPUT/OUTPUT FAST READ Command ............................................................................. 44 Figure 22: PAGE PROGRAM Command .......................................................................................................... 46 Figure 23: DUAL INPUT FAST PROGRAM Command ...................................................................................... 46 Figure 24: EXTENDED DUAL INPUT FAST PROGRAM Command ................................................................... 47 Figure 25: QUAD INPUT FAST PROGRAM Command ..................................................................................... 47 Figure 26: EXTENDED QUAD INPUT FAST PROGRAM Command ................................................................... 48 Figure 27: WRITE ENABLE and WRITE DISABLE Command Sequence ............................................................ 50 Figure 28: SUBSECTOR and SECTOR ERASE Command .................................................................................. 52 Figure 29: BULK ERASE Command ................................................................................................................ 53 Figure 30: READ OTP Command .................................................................................................................... 56 Figure 31: PROGRAM OTP Command ............................................................................................................ 57 Figure 32: XIP Mode Directly After Power-On .................................................................................................. 58 Figure 33: Power-Up Timing .......................................................................................................................... 60 Figure 34: Reset AC Timing During PROGRAM or ERASE Cycle ........................................................................ 63 Figure 35: Reset Enable ................................................................................................................................. 63 Figure 36: Serial Input Timing ........................................................................................................................ 63 Figure 37: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) ................... 64 Figure 38: Hold Timing .................................................................................................................................. 65 Figure 39: Output Timing .............................................................................................................................. 66 Figure 40: V Timing .................................................................................................................................. 66 PPH Figure 41: AC Timing Input/Output Reference Levels ...................................................................................... 68 Figure 42: V-PDFN-8 6mm x 5mm Sawn (MLP8) – Package Code: F7 ................................................................ 73 Figure 43: V-PDFN-8 8mm x 6mm (MLP8) – Package Code: F8 ........................................................................ 74 Figure 44: T-PBGA-24b05 6mm x 8mm – Package Code: 12 .............................................................................. 75 Figure 45: T-PBGA-24b05 6mm x 8mm – Package Code: 14 .............................................................................. 76 Figure 46: SOP2-16 (300 mils body width) – Package Code: SF ......................................................................... 77 Figure 47: SOP2-8 (208 mils body width) – Package Code: SE ........................................................................... 78 09005aef845665fe 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Features List of Tables Table 1: Signal Descriptions ........................................................................................................................... 11 Table 2: Sectors[255:0] ................................................................................................................................... 14 Table 3: Data Protection using Device Protocols ............................................................................................. 15 Table 4: Memory Sector Protection Truth Table .............................................................................................. 15 Table 5: Protected Area Sizes – Upper Area ..................................................................................................... 15 Table 6: Protected Area Sizes – Lower Area ...................................................................................................... 16 Table 7: SPI Modes ........................................................................................................................................ 17 Table 8: Extended, Dual, and Quad SPI Protocols ............................................................................................ 20 Table 9: Status Register Bit Definitions ........................................................................................................... 22 Table 10: Nonvolatile Configuration Register Bit Definitions ........................................................................... 23 Table 11: Volatile Configuration Register Bit Definitions .................................................................................. 24 Table 12: Sequence of Bytes During Wrap ....................................................................................................... 26 Table 13: Supported Clock Frequencies .......................................................................................................... 26 Table 14: Enhanced Volatile Configuration Register Bit Definitions .................................................................. 26 Table 15: Flag Status Register Bit Definitions .................................................................................................. 27 Table 16: Command Set ................................................................................................................................. 29 Table 17: Lock Register .................................................................................................................................. 34 Table 18: Data/Address Lines for READ ID and MULTIPLE I/O READ ID Commands ....................................... 37 Table 19: Read ID Data Out ............................................................................................................................ 37 Table 20: Extended Device ID, First Byte ......................................................................................................... 37 Table 21: Serial Flash Discovery Parameter – Header Structure ........................................................................ 39 Table 22: Parameter ID .................................................................................................................................. 39 Table 23: Command/Address/Data Lines for READ MEMORY Commands ....................................................... 41 Table 24: Data/Address Lines for PROGRAM Commands ................................................................................ 45 Table 25: Suspend Parameters ....................................................................................................................... 54 Table 26: Operations Allowed/Disallowed During Device States ...................................................................... 54 Table 27: OTP Control Byte (Byte 64) .............................................................................................................. 57 Table 28: XIP Confirmation Bit ....................................................................................................................... 59 Table 29: Effects of Running XIP in Different Protocols .................................................................................... 59 Table 30: Power-Up Timing and V Threshold ............................................................................................... 61 WI Table 31: AC RESET Conditions ...................................................................................................................... 62 Table 32: Absolute Ratings ............................................................................................................................. 67 Table 33: Operating Conditions ...................................................................................................................... 67 Table 34: Input/Output Capacitance .............................................................................................................. 67 Table 35: AC Timing Input/Output Conditions ............................................................................................... 68 Table 36: DC Current Characteristics and Operating Conditions ...................................................................... 69 Table 37: DC Voltage Characteristics and Operating Conditions ...................................................................... 69 Table 38: AC Characteristics and Operating Conditions – Standard Specifications ............................................ 70 Table 39: AC Characteristics and Operating Conditions – Enhanced Specifications .......................................... 71 Table 40: Part Number Information ................................................................................................................ 79 Table 41: Package Details ............................................................................................................................... 80 09005aef845665fe 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Important Notes and Warnings Important Notes and Warnings Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this docu- ment if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi- cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib- utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non- automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and con- ditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to in- demnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. Critical Applications. Products are not authorized for use in applications in which failure of the Micron compo- nent could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environ- mental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Mi- cron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAIL- URE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or en- vironmental damages will result from failure of any semiconductor component. Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative. 09005aef845665fe 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Device Description Device Description The N25Q is the first high-performance multiple input/output serial Flash memory de- vice manufactured on 65nm NOR technology. It features execute-in-place (XIP) func- tionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM opera- tions. Features The memory is organized as 256 (64KB) main sectors that are further divided into 16 subsectors each (4096 subsectors in total). The memory can be erased one 4KB subsec- tor at a time, 64KB sectors at a time, or as a whole. The memory can be write protected by software through volatile and nonvolatile pro- tection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and program- med with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by us- ing dedicated PROGRAM/ERASE SUSPEND and RESUME instructions. Operating Protocols The memory can be operated with three different protocols: • Extended SPI (standard SPI protocol upgraded with dual and quad operations) • Dual I/O SPI • Quad I/O SPI The standard SPI protocol is extended and enhanced by dual and quad operations. In addition, the dual SPI and quad SPI protocols improve the data access time and throughput of a single I/O device by transmitting commands, addresses, and data across two or four data lines. XIP Mode XIP mode requires only an address (no instruction) to output data, improving random access time and eliminating the need to shadow code onto RAM for fast execution. All protocols support XIP operation. For flexibility, multiple XIP entry and exit methods are available. For applications that must enter XIP mode immediately after powering up, XIP mode can be set as the default mode through the nonvolatile configuration reg- ister bits. 09005aef845665fe 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Device Description Device Configurability The N25Q family offers additional features that are configured through the nonvolatile configuration register for default and/or nonvolatile settings. Volatile settings can be configured through the volatile and volatile-enhanced configuration registers. These configurable features include the following: • Number of dummy cycles for the fast READ commands • Output buffer impedance • SPI protocol types (extended SPI, DIO-SPI, or QIO-SPI) • Required XIP mode • Enabling/disabling HOLD (RESET function) • Enabling/disabling wrap mode Figure 1: Logic Diagram V CC DQ0 DQ1 C S# V /W#/DQ2 PP HOLD#/DQ3 V SS Note: 1. Reset functionality is available in devices with a dedicated part number. See Part Num- ber Ordering Information for more details. 09005aef845665fe 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Signal Assignments Signal Assignments Figure 2: 8-Pin, VDFPN8 – MLP8 and SOP2 – SO8W (Top View) S# 1 8 V CC DQ1 2 7 HOLD#/DQ3 W#/V /DQ2 3 6 C PP V 4 5 DQ0 SS Notes: 1. On the underside of the MLP8 package, there is an exposed central pad that is pulled internally to V and must not be connected to any other voltage or signal line on the SS PCB. 2. Reset functionality is available in devices with a dedicated part number. See Part Num- ber Ordering Information for complete package names and details. Figure 3: 16-Pin, Plastic Small Outline – SO16 (Top View) HOLD#/DQ3 1 16 C V 2 15 DQ0 CC DNU 3 14 DNU DNU 4 13 DNU DNU 5 12 DNU DNU 6 11 DNU S# 7 10 V SS DQ1 8 9 W#/V /DQ2 PP Note: 1. Reset functionality is available in devices with a dedicated part number. See Part Num- ber Ordering Information for complete package names and details. 09005aef845665fe 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Signal Assignments Figure 4: 24-Ball TBGA (Balls Down) 1 2 3 4 5 A NC NC NC NC B NC C V V NC SS CC C NC S# NC W#/V /DQ2 NC PP D NC DQ1 DQ0HOLD#/DQ3 NC E NC NC NC NC NC Note: 1. See Part Number Ordering Information for complete package names and details. Figure 5: 24-Ball TBGA , 4x6 (Balls Down) 1 2 3 4 A NC NC NC NC B NC C V V SS CC C NC S# NC W#/V /DQ2 PP D NC DQ1 DQ0 HOLD#/DQ3 E NC NC NC NC F NC NC NC NC Note: 1. See Part Number Ordering Information for complete package names and details. 09005aef845665fe 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Signal Descriptions Signal Descriptions The signal description table below is a comprehensive list of signals for the N25 family devices. All signals listed may not be supported on this device. See Signal Assignments for information specific to this device. Table 1: Signal Descriptions Symbol Type Description C Input Clock: Provides the timing of the serial interface. Commands, addresses, or data present at se- rial data inputs are latched on the rising edge of the clock. Data is shifted out on the falling edge of the clock. S# Input Chip select: When S# is HIGH, the device is deselected and DQ1 is at High-Z. When in exten- ded SPI mode, with the device deselected, DQ1 is tri-stated. Unless an internal PROGRAM, ERASE, or WRITE STATUS REGISTER cycle is in progress, the device enters standby power mode (not deep power-down mode). Driving S# LOW enables the device, placing it in the active pow- er mode. After power-up, a falling edge on S# is required prior to the start of any command. DQ0 Input Serial data: Transfers data serially into the device. It receives command codes, addresses, and and I/O the data to be programmed. Values are latched on the rising edge of the clock. DQ0 is used for input/output during the following operations: DUAL OUTPUT FAST READ, QUAD OUTPUT FAST READ, DUAL INPUT/OUTPUT FAST READ, and QUAD INPUT/OUTPUT FAST READ. When used for output, data is shifted out on the falling edge of the clock. In DIO-SPI, DQ0 always acts as an input/output. In QIO-SPI, DQ0 always acts as an input/output, with the exception of the PROGRAM or ERASE cycle performed with V . The device temporarily enters the extended SPI protocol and then re- PP turns to QIO-SPI as soon as V goes LOW. PP DQ1 Output Serial data:Transfers data serially out of the device. Data is shifted out on the falling edge of and I/O the clock. DQ1 is used for input/output during the following operations: DUAL INPUT FAST PROGRAM, QUAD INPUT FAST PROGRAM, DUAL INPUT EXTENDED FAST PROGRAM, and QUAD INPUT EXTENDED FAST PROGRAM. When used for input, data is latched on the rising edge of the clock. In DIO-SPI, DQ1 always acts as an input/output. In QIO-SPI, DQ1 always acts as an input/output, with the exception of the PROGRAM or ERASE cycle performed with the enhanced program supply voltage (V ). In this case the device tem- PP porarily enters the extended SPI protocol and then returns to QIO-SPI as soon as V goes LOW. PP DQ2 Input DQ2: When in QIO-SPI mode or in extended SPI mode using QUAD FAST READ commands, the and I/O signal functions as DQ2, providing input/output. All data input drivers are always enabled except when used as an output. Micron recommends customers drive the data signals normally (to avoid unnecessary switching current) and float the signals before the memory device drives data on them. DQ3 Input DQ3: When in quad SPI mode or in extended SPI mode using quad FAST READ commands, the and I/O signal functions as DQ3, providing input/output. HOLD# is disabled and RESET# is disabled if the device is selected. RESET# Control RESET: This is a hardware RESET# signal. When RESET# is driven HIGH, the memory is in the Input normal operating mode. When RESET# is driven LOW, the memory enters reset mode and out- put is High-Z. If RESET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, data may be lost. 09005aef845665fe 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Signal Descriptions Table 1: Signal Descriptions (Continued) Symbol Type Description HOLD# Control HOLD: Pauses any serial communications with the device without deselecting the device. DQ1 Input (output) is High-Z. DQ0 (input) and the clock are "Don't Care." To enable HOLD, the device must be selected with S# driven LOW. HOLD# is used for input/output during the following operations: QUAD OUTPUT FAST READ, QUAD INPUT/OUTPUT FAST READ, QUAD INPUT FAST PROGRAM, and QUAD INPUT EXTENDED FAST PROGRAM. In QIO-SPI, HOLD# acts as an I/O (DQ3 functionality), and the HOLD# functionality is disabled when the device is selected. When the device is deselected (S# is HIGH) in parts with RESET# functionality, it is possible to reset the device unless this functionality is not disabled by means of dedicated registers bits. The HOLD# functionality can be disabled using bit 4 of the NVCR or bit 4 of the VECR. On devices that include DTR mode capability, the HOLD# functionality is disabled as soon as a DTR operation is recognized. W# Control Write protect: W# can be used as a protection control input or in QIO-SPI operations. When in Input extended SPI with single or dual commands, the WRITE PROTECT function is selectable by the voltage range applied to the signal. If voltage range is low (0V to V ), the signal acts as a CC write protection control input. The memory size protected against PROGRAM or ERASE opera- tions is locked as specified in the status register block protect bits 3:0. W# is used as an input/output (DQ2 functionality) during QUAD INPUT FAST READ and QUAD INPUT/OUTPUT FAST READ operations and in QIO-SPI. V Power Supply voltage: If V is in the voltage range of V , the signal acts as an additional power PP PP PPH supply, as defined in the AC Measurement Conditions table. During QIFP, QIEFP, and QIO-SPI PROGRAM/ERASE operations, it is possible to use the addition- al V power supply to speed up internal operations. However, to enable this functionality, it is PP necessary to set bit 3 of the VECR to 0. In this case, V is used as an I/O until the end of the operation. After the last input data is shif- PP ted in, the application should apply V voltage to V within 200ms to speed up the internal PP PP operations. If the V voltage is not applied within 200ms, the PROGRAM/ERASE operations PP start at standard speed. The default value of VECR bit 3 is 1, and the V functionality for quad I/O modify operations is PP disabled. V Power Device core power supply: Source voltage. CC V Ground Ground: Reference for the V supply voltage. SS CC DNU – Do not use. NC – No connect. 09005aef845665fe 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Memory Organization Memory Organization Memory Configuration and Block Diagram Each page of memory can be individually programmed. Bits are programmed from one through zero. The device is subsector, sector, or bulk-erasable, but not page-erasable. Bits are erased from zero through one. The memory is configured as 16,777,216 bytes (8 bits each); 256 sectors (64KB each); 4096 subsectors (4KB each); and 65,536 pages (256 bytes each); and 64 OTP bytes are located outside the main memory array. Figure 6: Block Diagram HOLD# High voltage W#/V Control logic PP generator S# 64 OTP bytes C DQ0 DQ1 I/O shift register DQ2 DQ3 Address register 256 byte Status and counter data buffer register 00FFFFFF r e d o c e d Y 0000000h 00000FFh 256 bytes (page size) X decoder 09005aef845665fe 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Memory Map – 128Mb Density Memory Map – 128Mb Density Table 2: Sectors[255:0] Address Range Sector Subsector Start End 255 4095 00FF F000h 00FF FFFFh ⋮ ⋮ ⋮ 4080 00FF 0000h 00FF 0FFFh ⋮ ⋮ ⋮ ⋮ 127 2047 007F F000h 007F FFFFh ⋮ ⋮ ⋮ 2032 007F 0000h 007F 0FFFh ⋮ ⋮ ⋮ ⋮ 63 1023 003F F000h 003F FFFFh ⋮ ⋮ ⋮ 1008 003F 0000h 003F 0FFFh ⋮ ⋮ ⋮ ⋮ 0 15 0000 F000h 0000 FFFFh ⋮ ⋮ ⋮ 0 0000 0000h 0000 0FFFh 09005aef845665fe 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Device Protection Device Protection Table 3: Data Protection using Device Protocols Note 1 applies to the entire table Protection by: Description Power-on reset and internal timer Protects the device against inadvertent data changes while the power supply is out- side the operating specification. Command execution check Ensures that the number of clock pulses is a multiple of one byte before executing a PROGRAM or ERASE command, or any command that writes to the device registers. WRITE ENABLE operation Ensures that commands modifying device data must be preceded by a WRITE ENABLE command, which sets the write enable latch bit in the status register. Note: 1. Extended, dual, and quad SPI protocol functionality ensures that device data is protec- ted from excessive noise. Table 4: Memory Sector Protection Truth Table Note 1 applies to the entire table Sector Lock Register Sector Lock Sector Write Lock Down Bit Bit Memory Sector Protection Status 0 0 Sector unprotected from PROGRAM and ERASE operations. Protection status re- versible. 0 1 Sector protected from PROGRAM and ERASE operations. Protection status rever- sible. 1 0 Sector unprotected from PROGRAM and ERASE operations. Protection status not reversible except by power cycle or reset. 1 1 Sector protected from PROGRAM and ERASE operations. Protection status not reversible except by power cycle or reset. Note: 1. Sector lock register bits are written to when the WRITE LOCK REGISTER command is exe- cuted. The command will not execute unless the sector lock down bit is cleared (see the WRITE LOCK REGISTER command). Table 5: Protected Area Sizes – Upper Area Note 1 applies to the entire table Status Register Content Memory Content Top/ Bottom Bit BP3 BP2 BP1 BP0 Protected Area Unprotected Area 0 0 0 0 0 None All sectors 0 0 0 0 1 Upper 256th Sectors (0 to 254) 0 0 0 1 0 Upper 128th Sectors (0 to 253) 0 0 0 1 1 Upper 64th Sectors (0 to 251) 0 0 1 0 0 Upper 32th Sectors (0 to 247) 0 0 1 0 1 Upper 16nd Sectors (0 to 239) 09005aef845665fe 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Device Protection Table 5: Protected Area Sizes – Upper Area (Continued) Note 1 applies to the entire table Status Register Content Memory Content Top/ Bottom Bit BP3 BP2 BP1 BP0 Protected Area Unprotected Area 0 0 1 1 0 Upper 8th Sectors (0 to 223) 0 0 1 1 1 Upper quarter Sectors (0 to 191) 0 1 0 0 0 Upper half Sectors (0 to 127) 0 1 0 0 1 All sectors None 0 1 0 1 0 All sectors None 0 1 0 1 1 All sectors None 0 1 1 0 0 All sectors None 0 1 1 0 1 All sectors None 0 1 1 1 0 All sectors None 0 1 1 1 1 All sectors None Note: 1. See the Status Register for details on the top/bottom bit and the BP 3:0 bits. Table 6: Protected Area Sizes – Lower Area Note 1 applies to the entire table Status Register Content Memory Content Top/ Bottom Bit BP3 BP2 BP1 BP0 Protected Area Unprotected Area 1 0 0 0 0 None All sectors 1 0 0 0 1 Lower 256th Sectors (1 to 255) 1 0 0 1 0 Lower 128th Sectors (2 to 255) 1 0 0 1 1 Lower 64th Sectors (4 to 255) 1 0 1 0 0 Lower 32th Sectors (8 to 255) 1 0 1 0 1 Lower 16nd Sectors (16 to 255) 1 0 1 1 0 Lower 8th Sectors (32 to 255) 1 0 1 1 1 Lower quarter Sectors (64 to 255) 1 1 0 0 0 Lower half Sectors (128 to 255) 1 1 0 0 1 All sectors None 1 1 0 1 0 All sectors None 1 1 0 1 1 All sectors None 1 1 1 0 0 All sectors None 1 1 1 0 1 All sectors None 1 1 1 1 0 All sectors None 1 1 1 1 1 All sectors None Note: 1. See the Status Register for details on the top/bottom bit and the BP 3:0 bits. 09005aef845665fe 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Serial Peripheral Interface Modes Serial Peripheral Interface Modes The device can be driven by a microcontroller while its serial peripheral interface is in either of the two modes shown here. The difference between the two modes is the clock polarity when the bus master is in standby mode and not transferring data. Input data is latched in on the rising edge of the clock, and output data is available from the falling edge of the clock. Table 7: SPI Modes Note 1 applies to the entire table SPI Modes Clock Polarity CPOL = 0, CPHA = 0 C remains at 0 for (CPOL = 0, CPHA = 0) CPOL = 1, CPHA = 1 C remains at 1 for (CPOL = 1, CPHA = 1) Note: 1. The listed SPI modes are supported in extended, dual, and quad SPI protocols. Shown below is an example of three memory devices in extended SPI protocol in a sim- ple connection to an MCU on an SPI bus. Because only one device is selected at a time, that one device drives DQ1, while the other devices are High-Z. Resistors ensure the device is not selected if the bus master leaves S# High-Z. The bus master might enter a state in which all input/output is High-Z simultaneously, such as when the bus master is reset. Therefore, the serial clock must be connected to an exter- nal pull-down resistor so that S# is pulled HIGH while the serial clock is pulled LOW. This ensures that S# and the serial clock are not HIGH simultaneously and that tSHCH is met. The typical resistor value of 100kΩ, assuming that the time constant R × Cp (Cp = parasitic capacitance of the bus line), is shorter than the time the bus master leaves the SPI bus in High-Z. Example: Cp = 50pF, that is R × Cp = 5μs. The application must ensure that the bus mas- ter never leaves the SPI bus High-Z for a time period shorter than 5μs. W# and HOLD# should be driven either HIGH or LOW, as appropriate. 09005aef845665fe 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Serial Peripheral Interface Modes Figure 7: Bus Master and Memory Devices on the SPI Bus V SS V CC R SDO SPI interface: SDI (CPOL, CPHA) = (0, 0) or (1, 1) SCK C V C V C V CC CC CC V V V SPI bus master DQ1 DQ0 SS DQ1 DQ0 SS DQ1 DQ0 SS R SPI memory R SPI memory R SPI memory device device device CS3 CS2 CS1 S# W# HOLD# S# W# HOLD# S# W# HOLD# 09005aef845665fe 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Serial Peripheral Interface Modes Figure 8: Bus Master and Memory Devices on the SPI Bus V SS V CC R SDO SPI interface: SDI (CPOL, CPHA) = (0, 0) or (1, 1) SCK C V C V C V CC CC CC V V V SPI bus master DQ1 DQ0 SS DQ1 DQ0 SS DQ1 DQ0 SS R SPI memory R SPI memory R SPI memory device device device CS3 CS2 CS1 S# HOLD# S# HOLD# S# HOLD# Figure 9: SPI Modes CPOL CPHA 0 0 C 1 1 C DQ0 MSB DQ1 MSB 09005aef845665fe 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory SPI Protocols SPI Protocols Table 8: Extended, Dual, and Quad SPI Protocols Com- Protocol mand Address Data Name Input Input Input/Output Description Extended DQ0 Multiple DQn Multiple DQn Device default protocol from the factory. Additional com- lines, depending lines, depending mands extend the standard SPI protocol and enable address on the command on the command or data transmission on multiple DQn lines. Dual DQ[1:0] DQ[1:0] DQ[1:0] Volatile selectable: When the enhanced volatile configu- ration register bit 6 is set to 0 and bit 7 is set to 1, the de- vice enters the dual SPI protocol immediately after the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command. The device returns to the default protocol after the next power-on. In addition, the device can return to de- fault protocol using the rescue sequence or through new WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command, without power-off or power-on. Nonvolatile selectable: When nonvolatile configuration register bit 2 is set, the device enters the dual SPI protocol after the next power-on. Once this register bit is set, the de- vice defaults to the dual SPI protocol after all subsequent power-on sequences until the nonvolatile configuration register bit is reset to 1. Quad1 DQ[3:0] DQ[3:0] DQ[3:0] Volatile selectable: When the enhanced volatile configu- ration register bit 7 is set to 0, the device enters the quad SPI protocol immediately after the WRITE ENHANCED VOL- ATILE CONFIGURATION REGISTER command. The device re- turns to the default protocol after the next power-on. In ad- dition, the device can return to default protocol using the rescue sequence or through new WRITE ENHANCED VOLA- TILE CONFIGURATION REGISTER command, without power- off or power-on. Nonvolatile selectable: When nonvolatile configuration register bit 3 is set to 0, the device enters the quad SPI pro- tocol after the next power-on. Once this register bit is set, the device defaults to the quad SPI protocol after all subse- quent power-on sequences until the nonvolatile configura- tion register bit is reset to 1. Note: 1. In quad SPI protocol, all command/address input and data I/O are transmitted on four lines except during a PROGRAM and ERASE cycle performed with V . In this case, the PP device enters the extended SPI protocol to temporarily allow the application to perform a PROGRAM/ERASE SUSPEND operation or to check the write-in-progress bit in the sta- tus register or the program/erase controller bit in the flag status register. Then, when V goes LOW, the device returns to the quad SPI protocol. PP 09005aef845665fe 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers Nonvolatile and Volatile Registers The device features the following volatile and nonvolatile registers that users can access to store device parameters and operating configurations: • Status register • Nonvolatile and volatile configuration registers • Enhanced volatile configuration register • Flag status register • Lock register Note: The lock register is defined in READ LOCK REGISTER Command. In addition to these user-accessible registers, the working condition of memory is set by an internal configuration register that is not directly accessible to users. As shown be- low, parameters in the internal configuration register are loaded from the nonvolatile configuration register during each device boot phase or power-on reset. In this sense, then, the nonvolatile configuration register contains the default settings of memory. Also, during the life of an application, each time a WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER command executes to set configuration pa- rameters in these respective registers, these new settings are copied to the internal con- figuration register. Therefore, memory settings can be changed in real time. However, at the next power-on reset, the memory boots according to the memory settings defined in the nonvolatile configuration register parameters. Figure 10: Internal Configuration Register Nonvolatile configuration register Volatile configuration register and enhanced volatile configuration register Register download is executed only during Register download is executed after a the power-on phase or after a reset, WRITE VOLATILE OR ENHANCED VOLATILE overwriting configuration register settings CONFIGURATION REGISTER command, on the internal configuration register. overwriting configuration register Internal configuration settings on the internal configuration register. register Device behavior 09005aef845665fe 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers Status Register Table 9: Status Register Bit Definitions Note 1 applies to entire table Bit Name Settings Description Notes 7 Status register 0 = Enabled Nonvolatile bit: Used with the W#/V signal to enable or 2 PP write enable/disable 1 = Disabled disable writing to the status register. A one-time program- mable bit used to lock permanently the entire status regis- ter. 5 Top/bottom 0 = Top Nonvolatile bit: Determines whether the protected mem- 3 1 = Bottom ory area defined by the block protect bits starts from the top or bottom of the memory array. 6, 4:2 Block protect 3–0 See Protected Area Nonvolatile bit: Defines memory to be software protec- 3 Sizes – Upper Area ted against PROGRAM or ERASE operations. When one or and Lower Area more block protect bits is set to 1, a designated memory tables in Device area is protected from PROGRAM and ERASE operations. Protection 1 Write enable latch 0 = Cleared (Default) Volatile bit: The device always powers up with this bit 4 1 = Set cleared to prevent inadvertent WRITE STATUS REGISTER, PROGRAM, or ERASE operations. To enable these opera- tions, the WRITE ENABLE operation must be executed first to set this bit. 0 Write in progress 0 = Ready Volatile bit: Indicates if one of the following command cy- 4 1 = Busy cles is in progress: WRITE STATUS REGISTER WRITE NONVOLATILE CONFIGURATION REGISTER PROGRAM ERASE Notes: 1. Bits can be read from or written to using READ STATUS REGISTER or WRITE STATUS REG- ISTER commands, respectively. 2. The status register write enable/disable bit, combined with the W#/V signal as descri- PP bed in the Signal Descriptions, provides hardware data protection for the device as fol- lows: When the enable/disable bit is set to 1, and the W#/V signal is driven LOW, the PP status register nonvolatile bits become read-only and the WRITE STATUS REGISTER oper- ation will not execute. The only way to exit this hardware-protected mode is to drive W#/V HIGH.This one-time programmable status register bit can be set to 1 only once. PP Afterward, the status register is set permanently to read-only, and the area protected by the status register block protect bits also is set permanently to read-only. 3. See Protected Area Sizes tables in Device Protection. The BULK ERASE command is exe- cuted only if all bits are 0. 4. Volatile bits are cleared to 0 by a power cycle or reset. 09005aef845665fe 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers Nonvolatile and Volatile Configuration Registers Table 10: Nonvolatile Configuration Register Bit Definitions Note 1 applies to entire table Bit Name Settings Description Notes 15:12 Number of 0000 (identical to 1111) Sets the number of dummy clock cycles subse- 2, 3 dummy clock 0001 quent to all FAST READ commands. cycles 0010 The default setting targets the maximum al- . lowed frequency and guarantees backward com- . patibility. 1101 1110 1111 11:9 XIP mode at 000 = XIP: Fast Read Enables the device to operate in the selected XIP power-on re- 001 = XIP: Dual Output Fast Read mode immediately after power-on reset. set 010 = XIP: Dual I/O Fast Read 011 = XIP: Quad Output Fast Read 100 = XIP: Quad I/O Fast Read 101 = Reserved 110 = Reserved 111 = Disabled (Default) 8:6 Output driver 000 = Reserved Optimizes impedance at V /2 output voltage. CC strength 001 = 90 Ohms 010 = 60 Ohms 011 = 45 Ohms 100 = Reserved 101 = 20 Ohms 110 = 15 Ohms 111 = 30 (Default) 5 Reserved X "Don't Care." 4 Reset/hold 0 = Disabled Enables or disables hold or reset. 1 = Enabled (Default) (Available on dedicated part numbers.) 3 Quad I/O pro- 0 = Enabled Enables or disables quad I/O protocol. 4 tocol 1 = Disabled (Default, Extended SPI prot- cocol) 2 Dual I/O pro- 0 = Enabled Enables or disables dual I/O protocol. 4 tocol 1 = Disabled (Default, Extended SPI pro- tocol) 1:0 Reserved X "Don't Care." 1:0 Reserved X "Don't Care." 1 Reserved X "Don't Care." 0 Lock 0 = Disabled When this bit is set to 0, the nonvolatile configu- nonvolatile 1 = Enabled (Default) ration register becomes permanently write pro- configuration tected and any WRITE NONVOLATILE CONFIGU- register RATION REGISTER command is ignored. Notes: 1. Settings determine device memory configuration after power-on. The device ships from the factory with all bits erased to 1 (FFFFh). The register is read from or written to by 09005aef845665fe 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers READ NONVOLATILE CONFIGURATION REGISTER or WRITE NONVOLATILE CONFIGURA- TION REGISTER commands, respectively. 2. The 0000 and 1111 settings are identical in that they both define the default state, which is the maximum frequency of fc = 108 MHz. This ensures backward compatibility. 3. If the number of dummy clock cycles is insufficient for the operating frequency, the memory reads wrong data. The number of cycles must be set according to and sufficient for the clock frequency, which varies by the type of FAST READ command, as shown in the Supported Clock Frequencies table. 4. If bits 2 and 3 are both set to 0, the device operates in quad I/O. When bits 2 or 3 are reset to 0, the device operates in dual I/O or quad I/O respectively, after the next power- on. Table 11: Volatile Configuration Register Bit Definitions Note 1 applies to entire table Bit Name Settings Description Notes 7:4 Number of dum- 0000 (identical to 1111) Sets the number of dummy clock cycles subsequent to 2, 3 my clock cycles 0001 all FAST READ commands. 0010 The default setting targets maximum allowed frequen- . cy and guarantees backward compatibility. . 1101 1110 1111 3 XIP 0 = Enable Enables or disables XIP. For device part numbers with 1 = Disable (default) feature digit equal to 2 or 4, this bit is always "Don’t Care," so the device operates in XIP mode without set- ting this bit. 2 Reserved X = Default 0b = Fixed value. 1:0 Wrap 00 = 16-byte boundary 16-byte wrap: Output data wraps within an aligned 16- 4 aligned byte boundary starting from the 3-byte address issued after the command code. 01 = 32-byte boundary 32-byte wrap: Output data wraps within an aligned 32- aligned byte boundary starting from the 3-byte address issued after the command code. 10 = 64-byte boundary 64-byte wrap: Output data wraps within an aligned 64- aligned byte boundary starting from the 3-byte address issued after the command code. 11 = sequential (default) Continuous reading (default): All bytes are read se- quentially. Notes: 1. Settings determine the device memory configuration upon a change of those settings by the WRITE VOLATILE CONFIGURATION REGISTER command. The register is read from or written to by READ VOLATILE CONFIGURATION REGISTER or WRITE VOLATILE CONFIGU- RATION REGISTER commands respectively. 2. The 0000 and 1111 settings are identical in that they both define the default state, which is the maximum frequency of fc = 108 MHz. This ensures backward compatibility. 3. If the number of dummy clock cycles is insufficient for the operating frequency, the memory reads wrong data. The number of cycles must be set according to and be suffi- cient for the clock frequency, which varies by the type of FAST READ command, as shown in the Supported Clock Frequencies table. 09005aef845665fe 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers 4. See the Sequence of Bytes During Wrap table. 09005aef845665fe 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers Table 12: Sequence of Bytes During Wrap Starting Address 16-Byte Wrap 32-Byte Wrap 64-Byte Wrap 0 0-1-2- . . . -15-0-1- . . 0-1-2- . . . -31-0-1- . . 0-1-2- . . . -63-0-1- . . 1 1-2- . . . -15-0-1-2- . . 1-2- . . . -31-0-1-2- . . 1-2- . . . -63-0-1-2- . . 15 15-0-1-2-3- . . . -15-0-1- . . 15-16-17- . . . -31-0-1- . . 15-16-17- . . . -63-0-1- . . 31 31-16-17- . . . -31-16-17- . . 31-0-1-2-3- . . . -31-0-1- . . 31-32-33- . . . -63-0-1- . . 63 63-48-49- . . . -63-48-49- . . 63-32-33- . . . -63-32-33- . . 63-0-1- . . . -63-0-1- . . Table 13: Supported Clock Frequencies Note 1 applies to entire table Number of Dummy DUAL OUTPUT DUAL I/O FAST QUAD OUTPUT QUAD I/O FAST Clock Cycles FAST READ FAST READ READ FAST READ READ Unit 1 90 80 50 43 30 2 100 90 70 60 40 3 108 100 80 75 50 4 108 105 90 90 60 5 108 108 100 100 70 MHz 6 108 108 105 105 80 7 108 108 108 108 86 8 108 108 108 108 95 9 108 108 108 108 105 10 108 108 108 108 108 Note: 1. Values are guaranteed by characterization and not 100% tested in production. Enhanced Volatile Configuration Register Table 14: Enhanced Volatile Configuration Register Bit Definitions Note 1 applies to entire table Bit Name Settings Description Notes 7 Quad I/O protocol 0 = Enabled Enables or disables quad I/O protocol. 2 1 = Disabled (Default, extended SPI protocol) 6 Dual I/O protocol 0 = Enabled Enables or disables dual I/O protocol. 2 1 = Disabled (Default, extended SPI protocol) 5 Reserved X = Default 0b = Fixed value. 4 Reset/hold 0 = Disabled Enables or disables hold or reset. 1 = Enabled (Default) (Available on dedicated part numbers.) 09005aef845665fe 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers Table 14: Enhanced Volatile Configuration Register Bit Definitions (Continued) Note 1 applies to entire table Bit Name Settings Description Notes 3 V accelerator 0 = Enabled Enables or disables V acceleration for QUAD PP PP 1 = Disabled (Default) INPUT FAST PROGRAM and QUAD INPUT EX- TENDED FAST PROGRAM OPERATIONS. 2:0 Output driver strength 000 = Reserved Optimizes impedance at V /2 output voltage. CC 001 = 90 Ohms 010 = 60 Ohms 011 = 45 Ohms 100 = Reserved 101 = 20 Ohms 110 = 15 Ohms 111 = 30 (Default) Notes: 1. Settings determine the device memory configuration upon a change of those settings by the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command. The register is read from or written to in all protocols by READ ENHANCED VOLATILE CONFIGURATION REGISTER or WRITE ENHANCED VOLATILE CONFIGURATION REGISTER commands, respec- tively. 2. If bits 6 and 7 are both set to 0, the device operates in quad I/O. When either bit 6 or 7 is reset to 0, the device operates in dual I/O or quad I/O, respectively, following the next WRITE ENHANCED VOLATILE CONFIGURATION command. Flag Status Register Table 15: Flag Status Register Bit Definitions Note 1 applies to entire table Bit Name Settings Description Notes 7 Program or 0 = Busy Status bit: Indicates whether a PROGRAM, ERASE, 2, 3 erase 1 = Ready WRITE STATUS REGISTER, or WRITE NONVOLATILE CON- controller FIGURATION command cycle is in progress. 6 Erase suspend 0 = Not in effect Status bit: Indicates whether an ERASE operation has 3 1 = In effect been or is going to be suspended. 5 Erase 0 = Clear Error bit: Indicates whether an ERASE operation has 4, 5 1 = Failure or protection error succeeded or failed. 4 Program 0 = Clear Error bit: Indicates whether a PROGRAM operation has 4, 5 1 = Failure or protection error succeeded or failed. Also indicates an attempt to pro- gram a 0 to a 1 when V = V and the data pattern is PP PPH a multiple of 64 bits. 3 V 0 = Enabled Error bit: Indicates an invalid voltage on V during a 4, 5 PP PP 1 = Disabled (Default) PROGRAM or ERASE operation. 2 Program 0 = Not in effect Status bit: Indicates whether a PROGRAM operation 3 suspend 1 = In effect has been or is going to be suspended. 09005aef845665fe 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Nonvolatile and Volatile Registers Table 15: Flag Status Register Bit Definitions (Continued) Note 1 applies to entire table Bit Name Settings Description Notes 1 Protection 0 = Clear Error bit: Indicates whether an ERASE or a PROGRAM 4, 5 1 = Failure or protection error operation has attempted to modify the protected array sector, or whether a PROGRAM operation has attemp- ted to access the locked OTP space. 0 Reserved Reserved Reserved Notes: 1. Register bits are read by READ FLAG STATUS REGISTER command. All bits are volatile. 2. These program/erase controller settings apply only to PROGRAM or ERASE command cy- cles in progress, or to the specific WRITE command cycles in progress as shown here. 3. Status bits are reset automatically. 4. Error bits must be reset by CLEAR FLAG STATUS REGISTER command. 5. Typical errors include operation failures and protection errors caused by issuing a com- mand before the error bit has been reset to 0. 09005aef845665fe 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Command Definitions Command Definitions Table 16: Command Set Note 1 applies to entire table Dual Quad Data Command Code Extended I/O I/O Bytes Notes RESET Operations RESET ENABLE 66h Yes Yes Yes 0 2 RESET MEMORY 99h IDENTIFICATION Operations READ ID 9E/9Fh Yes No No 1 to 20 2 MULTIPLE I/O READ ID AFh No Yes Yes 1 to 3 2 READ SERIAL FLASH 5Ah Yes Yes Yes 1 to ∞ 3 DISCOVERY PARAMETER READ Operations READ 03h Yes No No 1 to ∞ 4 FAST READ 0Bh Yes Yes Yes 5 DUAL OUTPUT FAST READ 3Bh Yes Yes No 1 to ∞ 5 DUAL INPUT/OUTPUT FAST READ 0Bh Yes Yes No 5, 6 3Bh BBh QUAD OUTPUT FAST READ 6Bh Yes No Yes 1 to ∞ 5 QUAD INPUT/OUTPUT FAST READ 0Bh Yes No Yes 5, 7 6Bh EBh WRITE Operations WRITE ENABLE 06h Yes Yes Yes 0 2 WRITE DISABLE 04h REGISTER Operations READ STATUS REGISTER 05h Yes Yes Yes 1 to ∞ 2 WRITE STATUS REGISTER 01h 1 2, 8 READ LOCK REGISTER E8h Yes Yes Yes 1 to ∞ 4 WRITE LOCK REGISTER E5h 1 4, 8 READ FLAG STATUS REGISTER 70h Yes Yes Yes 1 to ∞ 2 CLEAR FLAG STATUS REGISTER 50h 0 READ NONVOLATILE B5h Yes Yes Yes 2 2 CONFIGURATION REGISTER WRITE NONVOLATILE B1h 2, 8 CONFIGURATION REGISTER READ VOLATILE 85h Yes Yes Yes 1 to ∞ 2 CONFIGURATION REGISTER WRITE VOLATILE 81h 1 2, 8 CONFIGURATION REGISTER 09005aef845665fe 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Command Definitions Table 16: Command Set (Continued) Note 1 applies to entire table Dual Quad Data Command Code Extended I/O I/O Bytes Notes READ ENHANCED VOLATILE 65h Yes Yes Yes 1 to ∞ 2 CONFIGURATION REGISTER WRITE ENHANCED VOLATILE 61h Yes Yes Yes 1 2, 8 CONFIGURATION REGISTER PROGRAM Operations PAGE PROGRAM 02h Yes Yes Yes 1 to 256 4, 8 DUAL INPUT FAST PROGRAM A2h Yes Yes No 1 to 256 4, 8 EXTENDED DUAL INPUT 02h Yes Yes No 4, 6, 8 FAST PROGRAM A2h D2h QUAD INPUT FAST PROGRAM 32h Yes No Yes 1 to 256 4, 8 EXTENDED QUAD INPUT 02h Yes No Yes 4, 7, 8 FAST PROGRAM 32h 12h ERASE Operations SUBSECTOR ERASE 20h Yes Yes Yes 0 4, 8 SECTOR ERASE D8h 4, 8 BULK ERASE C7h 2, 8 PROGRAM/ERASE RESUME 7Ah Yes Yes Yes 0 2, 8 PROGRAM/ERASE SUSPEND 75h ONE-TIME PROGRAMMABLE (OTP) Operations READ OTP ARRAY 4Bh Yes Yes Yes 1 to 64 5 PROGRAM OTP ARRAY 42h 4 Notes: 1. Yes in the protocol columns indicates that the command is supported and has the same functionality and command sequence as other commands marked Yes. 2. Address bytes = 0. Dummy clock cycles = 0. 3. Address bytes = 3. Dummy clock cycles default = 8. 4. Address bytes default = 3. Dummy clock cycles = 0. 5. Address bytes default = 3. Dummy clock cycles default = 8. Dummy clock cycles default = 10 (when quad SPI protocol is enabled). Dummy clock cycles is configurable by the user. 6. When the device is in dual SPI protocol, the command can be entered with any of these three codes. The different codes enable compatibility between dual SPI and extended SPI protocols. 7. When the device is in quad SPI protocol, the command can be entered with any of these three codes. The different codes enable compatibility between quad SPI and extended SPI protocols. 8. The WRITE ENABLE command must be issued first before this command can be execu- ted. 09005aef845665fe 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ REGISTER and WRITE REGISTER Operations READ REGISTER and WRITE REGISTER Operations READ STATUS REGISTER or FLAG STATUS REGISTER Command To initiate a READ STATUS REGISTER command, S# is driven LOW. For extended SPI protocol, the command code is input on DQ0, and output on DQ1. For dual SPI proto- col, the command code is input on DQ[1:0], and output on DQ[1:0]. For quad SPI proto- col, the command code is input on DQ[3:0], and is output on DQ[3:0]. The operation is terminated by driving S# HIGH at any time during data output. The status register can be read continuously and at any time, including during a PRO- GRAM, ERASE, or WRITE operation. The flag status register can be read continuously and at any time, including during an ERASE or WRITE operation. If one of these operations is in progress, checking the write in progress bit or P/E con- troller bit is recommended before executing the command. Figure 11: READ REGISTER Command Extended 0 7 8 9 10 11 12 13 14 15 C LSB DQ0 Command MSB LSB DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT MSB Dual 0 3 4 5 6 7 C LSB LSB DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT MSB MSB Quad 0 1 2 3 C LSB LSB DQ[3:0] Command D D D OUT OUT OUT MSB MSB Don’t Care Notes: 1. Supports all READ REGISTER commands except READ LOCK REGISTER. 2. A READ NONVOLATILE CONFIGURATION REGISTER operation will output data starting from the least significant byte. READ NONVOLATILE CONFIGURATION REGISTER Command To execute a READ NONVOLATILE CONFIGURATION REGISTER command, S# is driv- en LOW. For extended SPI protocol, the command code is input on DQ0, and output on DQ1. For dual SPI protocol, the command code is input on DQ[1:0], and output on 09005aef845665fe 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ REGISTER and WRITE REGISTER Operations DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0], and is output on DQ[3:0]. The operation is terminated by driving S# HIGH at any time during data output. The nonvolatile configuration register can be read continuously. After all 16 bits of the register have been read, a 0 is output. All reserved fields output a value of 1. READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command To execute a READ VOLATILE CONFIGURATION REGISTER command or a READ EN- HANCED VOLATILE CONFIGURATION REGISTER command, S# is driven LOW. For ex- tended SPI protocol, the command code is input on DQ0, and output on DQ1. For dual SPI protocol, the command code is input on DQ[1:0], and output on DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0], and is output on DQ[3:0]. The op- eration is terminated by driving S# HIGH at any time during data output. When the register is read continuously, the same byte is output repeatedly. WRITE STATUS REGISTER Command To issue a WRITE STATUS REGISTER command, the WRITE ENABLE command must be executed to set the write enable latch bit to 1. S# is driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. For extended SPI protocol, the command code is input on DQ0, followed by the data bytes. For dual SPI protocol, the command code is input on DQ[1:0], followed by the da- ta bytes. For quad SPI protocol, the command code is input on DQ[3:0], followed by the data bytes. When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is tW. This command is used to write new values to status register bits 7:2, enabling software data protection. The status register can also be combined with the W# signal to provide hardware data protection. The WRITE STATUS REGISTER command has no effect on status register bits 1:0. When the operation is in progress, the write in progress bit is set to 1. The write enable latch bit is cleared to 0, whether the operation is successful or not. The status register and flag status register can be polled for the operation status. When the operation com- pletes, the write in progress bit is cleared to 0, whether the operation is successful or not. 09005aef845665fe 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ REGISTER and WRITE REGISTER Operations Figure 12: WRITE REGISTER Command Extended 0 7 8 9 10 11 12 13 14 15 C LSB LSB DQ0 Command DIN DIN DIN DIN DIN DIN DIN DIN DIN MSB MSB Dual 0 3 4 5 6 7 C LSB LSB DQ[1:0] Command DIN DIN DIN DIN DIN MSB MSB Quad 0 1 2 3 C LSB LSB DQ[3:0] Command DIN DIN DIN MSB MSB Notes: 1. Supports all WRITE REGISTER commands except WRITE LOCK REGISTER. 2. Waveform must be extended for each protocol, to 23 for extended, 11 for dual, and 5 for quad. 3. A WRITE NONVOLATILE CONFIGURATION REGISTER operation requires data being sent starting from least significant byte. WRITE NONVOLATILE CONFIGURATION REGISTER Command To execute the WRITE NONVOLATILE CONFIGURATION REGISTER command, the WRITE ENABLE command must be executed to set the write enable latch bit to 1. S# is driven LOW and held LOW until the 16th bit of the last data byte has been latched in, after which it must be driven HIGH. For extended SPI protocol, the command code is input on DQ0, followed by two data bytes. For dual SPI protocol, the command code is input on DQ[1:0], followed by the data bytes. For quad SPI protocol, the command code is input on DQ[3:0], followed by the data bytes. When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is tWNVCR. When the operation is in progress, the write in progress bit is set to 1. The write enable latch bit is cleared to 0, whether the operation is successful or not. The status register and flag status register can be polled for the operation status. When the operation com- pletes, the write in progress bit is cleared to 0, whether the operation is successful or not. If S# is not driven HIGH, the command is not executed, flag status register error bits are not set, and the write enable latch remains set to 1. WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command To execute a WRITE VOLATILE CONFIGURATION REGISTER command or a WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command, the WRITE ENABLE command must be executed to set the write enable latch bit to 1. S# is driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. For extended SPI protocol, the command code is input on DQ0, followed by the data bytes. For dual SPI protocol, the command code is input on 09005aef845665fe 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ REGISTER and WRITE REGISTER Operations DQ[1:0], followed by the data bytes. For quad SPI protocol, the command code is input on DQ[3:0], followed by the data bytes. If S# is not driven HIGH, the command is not executed, the flag status register error bits are not set and the write enable latch remains set to 1. Reserved bits are not affected by this command. READ LOCK REGISTER Command To execute the READ LOCK REGISTER command, S# is driven LOW. For extended SPI protocol, the command code is input on DQ0, followed by three address bytes that point to a location in the sector. For dual SPI protocol, the command code is input on DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0]. Each address bit is latched in during the rising edge of the clock. For extended SPI protocol, data is shifted out on DQ1 at a maximum frequency fC during the falling edge of the clock. For dual SPI protocol, data is shifted out on DQ[1:0], and for quad SPI protocol, data is shif- ted out on DQ[3:0]. The operation is terminated by driving S# HIGH at any time during data output. When the register is read continuously, the same byte is output repeatedly. Any READ LOCK REGISTER command that is executed while an ERASE, PROGRAM, or WRITE cy- cle is in progress is rejected with no affect on the cycle in progress. Table 17: Lock Register Note 1 applies to entire table Bit Name Settings Description 7:2 Reserved 0 Bit values are 0. 1 Sector lock down 0 = Cleared (Default) Volatile bit: the device always powers-up with this bit cleared, 1 = Set which means sector lock down and sector write lock bits can be set. When this bit set, neither of the lock register bits can be written to until the next power cycle. 0 Sector write lock 0 = Cleared (Default) Volatile bit: the device always powers-up with this bit cleared, 1 = Set which means that PROGRAM and ERASE operations in this sector can be executed and sector content modified. When this bit is set, PROGRAM and ERASE operations in this sec- tor will not be executed. Note: 1. Sector lock register bits 1:0 are written to by the WRITE LOCK REGISTER command. The command will not execute unless the sector lock down bit is cleared. 09005aef845665fe 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ REGISTER and WRITE REGISTER Operations Figure 13: READ LOCK REGISTER Command Extended 0 7 8 Cx C LSB A[MIN] DQ[0] Command MSB A[MAX] LSB DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT MSB Dual 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT MSB A[MAX] MSB Quad 0 1 2 Cx C LSB A[MIN] LSB DQ[3:0] Command DOUT DOUT DOUT MSB A[MAX] MSB Don’t Care Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1). For dual SPI protocol, C = 3 + ((A[MAX] + 1)/2). x For quad SPI protocol, C = 1 + ((A[MAX] + 1)/4). x WRITE LOCK REGISTER Command To initiate the WRITE LOCK REGISTER command, the WRITE ENABLE command must be executed to set the write enable latch bit to 1. S# is driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. The command code is input on DQn, followed by three address bytes that point to a location in the sector, and then one data byte that contains the desired settings for lock register bits 0 and 1. Each address bit is latched in during the rising edge of the clock. When execution is complete, the write enable latch bit is cleared within tSHSL2 and no error bits are set. Because lock register bits are volatile, change to the bits is immediate. WRITE LOCK REGISTER can be executed when an ERASE SUSPEND operation is in ef- fect. If S# is not driven HIGH, the command is not executed, flag status register error bits are not set, and the write enable latch remains set to 1. 09005aef845665fe 35 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ REGISTER and WRITE REGISTER Operations Figure 14: WRITE LOCK REGISTER Command Extended 0 7 8 Cx C LSB A[MIN] LSB DQ0 Command DIN DIN DIN DIN DIN DIN DIN DIN DIN MSB A[MAX] MSB Dual 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DIN DIN DIN DIN DIN MSB A[MAX] MSB Quad 0 1 2 Cx C LSB A[MIN] LSB DQ[3:0] Command DIN DIN DIN MSB A[MAX] MSB Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1). For dual SPI protocol, C = 3 + ((A[MAX] + 1)/2). x For quad SPI protocol, C = 1 + ((A[MAX] + 1)/4). x CLEAR FLAG STATUS REGISTER Command To execute the CLEAR FLAG STATUS REGISTER command and reset the error bits (erase, program, and protection), S# is driven LOW. For extended SPI protocol, the com- mand code is input on DQ0. For dual SPI protocol, the command code is input on DQ[1:0]. For quad SPI protocol, the command code is input on DQ[3:0]. The operation is terminated by driving S# HIGH at any time. 09005aef845665fe 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ IDENTIFICATION Operations READ IDENTIFICATION Operations READ ID and MULTIPLE I/O READ ID Commands To execute the READ ID or MULTIPLE I/O READ ID commands, S# is driven LOW and the command code is input on DQn. The device outputs the information shown in the tables below. If an ERASE or PROGRAM cycle is in progress when the command is exe- cuted, the command is not decoded and the command cycle in progress is not affected. When S# is driven HIGH, the device goes to standby. The operation is terminated by driving S# HIGH at any time during data output. Table 18: Data/Address Lines for READ ID and MULTIPLE I/O READ ID Commands Unique ID Command Name Data In Data Out is Output Extended Dual Quad READ ID DQ0 DQ0 Yes Yes No No MULTIPLE I/O READ ID DQ[3:0] DQ[1:0] No No Yes Yes Note: 1. Yes in the protocol columns indicates that the command is supported and has the same functionality and command sequence as other commands marked Yes. Table 19: Read ID Data Out Size (Bytes) Name Content Value Assigned by 1 Manufacturer ID 20h JEDEC 2 Device ID Memory Type BAh Manufacturer Memory Capacity 18h (128Mb) 17 Unique ID 1 Byte: Length of data to follow 10h Factory 2 Bytes: Extended device ID and device ID and information such as uniform configuration information architecture, and HOLD or RESET functionality 14 Bytes: Customized factory data Unique ID code (n read-only bytes) Note: 1. The 17 bytes of information in the unique ID is read by the READ ID command, but can- not be read by the MULTIPLE I/O READ ID command. Table 20: Extended Device ID, First Byte Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Reserved Reserved 1 = Reserved Volatile configuration HOLD#/RESET#: Addressing: Architecture: 0 = Standard BP register, XIP bit setting: 0 = HOLD 0 = by byte 00 = Uniform scheme 0 = Required 1 = RESET 1 = Not required 09005aef845665fe 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ IDENTIFICATION Operations Figure 15: READ ID and MULTIPLE I/O Read ID Commands Extended (READ ID) 0 7 8 15 16 31 32 C LSB DQ0 Command MSB LSB LSB LSB DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT MSB MSB MSB Manufacturer Device UID identification identification Dual (MULTIPLE I/O READ ID ) 0 3 4 7 8 15 C LSB LSB LSB DQ[1:0] Command DOUT DOUT DOUT DOUT MSB MSB MSB Manufacturer Device identification identification Quad (MULTIPLE I/O READ ID ) 0 1 2 3 4 7 C LSB LSB LSB DQ[3:0] Command DOUT DOUT DOUT DOUT MSB MSB MSB Manufacturer Device identification identification Don’t Care Note: 1. The READ ID command is represented by the extended SPI protocol timing shown first. The MULTIPLE I/O READ ID command is represented by the dual and quad SPI protocols are shown below extended SPI protocol. READ SERIAL FLASH DISCOVERY PARAMETER Command To execute READ SERIAL FLASH DISCOVERY PARAMETER command, S# is driven LOW. The command code is input on DQ0, followed by three address bytes and 8 dum- my clock cycles in extended or dual SPI protocol, 10 dummy clock cycles in quad SPI protocol. The device outputs the information starting from the specified address. When the 2048-byte boundary is reached, the data output wraps to address 0 of the serial Flash discovery parameter table. The operation is terminated by driving S# HIGH at any time during data output. The operation always executes in continuous mode so the read burst wrap setting in the volatile configuration register does not apply. Note: Data to be stored in the serial Flash discovery parameter area is still in the defini- tion phase. 09005aef845665fe 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ IDENTIFICATION Operations Table 21: Serial Flash Discovery Parameter – Header Structure Byte Data Description Address Bits 128Mb SFDP signature 00h 7:0 53h 01h 7:0 46h 02h 7:0 44h 03h 7:0 50h SFDP revision Minor 04h 7:0 00h Major 05h 7:0 01h Number of parameter headers 06h 7:0 00h Unused 07h 7:0 FFh Parameter ID (0) 08h 7:0 00h Parameter minor revision 09h 7:0 00h Parameter major revision 0Ah 7:0 01h Parameter length (in DW) 0Bh 7:0 09h Parameter table pointer 0Ch 7:0 30h 0Dh 7:0 00h 0Eh 7:0 00h Unused 0Fh 7:0 FFh Note: 1. Locations 10h to 2Fh contain FFh. Table 22: Parameter ID Byte Data Description Address Bits 128Mb Minimum block/sector erase sizes 30h 1:0 01b Write granularity 2 1 WRITE ENABLE command required for writing to volatile status 3 0 registers WRITE ENABLE command code select for writing to volatile status 4 0 register Unused 7:5 111b 4KB ERASE command code 31h 7:0 20h Supports 1-1-2 fast read 32h 0 1 Address bytes 2:1 00b Supports double transfer rate clocking 3 0 Supports 1-2-2 fast read 4 1 Supports 1-4-4 fast read 5 1 Supports 1-1-4 fast read 6 1 Unused 7 1 Reserved 33h 7:0 FFh 09005aef845665fe 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ IDENTIFICATION Operations Table 22: Parameter ID (Continued) Byte Data Description Address Bits 128Mb Flash size (in bits) 34h 7:0 FFh 35h 7:0 FFh 36h 7:0 FFh 37h 7:0 07h 1-4-4 FAST READ DUMMY cycle count 38h 4:0 01001b 1-4-4 fast read number of mode bits 7:5 001b 1-4-4 FAST READ command code 39h 7:0 EBh 1-1-4 FAST READ DUMMY cycle count 3Ah 4:0 00111b 1-1-4 fast read number of mode bits 7:5 001b 1-1-4 FAST READ command code 3Bh 7:0 6Bh 1-1-2 FAST READ DUMMY cycle count 3Ch 4:0 01000b 1-1-2 fast read number of mode bits 7:5 000b 1-1-2 FAST READ command code 3Dh 7:0 3Bh 1-2-2 FAST READ DUMMY cycle count 3Eh 4:0 00111b 1-2-2 fast read number of mode bits 7:5 001b 1-2-2 Instruction opcode 3Fh 7:0 BBh Supports 2-2-2 fast read 40h 0 1 Reserved 3:1 111b Supports 4-4-4 fast read 4 1 Reserved 7:5 111b Reserved 43:41h FFFFFFh FFFFFFh Reserved 45:44h FFFFh FFFFh 2-2-2 FAST READ DUMMY cycle count 46h 4:0 00111b 2-2-2 fast read number of mode bits 7:5 001b 2-2-2 FAST READ command code 47h 7:0 BBh Reserved 49:48h FFFFh FFFFh 4-4-4 FAST READ DUMMY cycle count 4Ah 4:0 01001b 4-4-4 fast read number of mode bits 7:5 001b 4-4-4 FAST READ command code 4Bh 7:0 EBh Sector type 1 size 4Ch 7:0 0Ch Sector type 1 command code 4Dh 7:0 20h Sector type 2 size 4Eh 7:0 10h Sector type 2 command code 4Fh 7:0 D8h Sector type 3 size 50h 7:0 00h Sector type 3 command code 51h 7:0 00h Sector type 4 size 52h 7:0 00h Sector type 4 command code 53h 7:0 00h 09005aef845665fe 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ MEMORY Operations READ MEMORY Operations The device supports default reading and writing to an A[MAX:MIN] of A[23:0]. To execute READ MEMORY commands, S# is driven LOW. The command code is input on DQn, followed by input on DQn of three address bytes. Each address bit is latched in during the rising edge of the clock. The addressed byte can be at any location, and the address automatically increments to the next address after each byte of data is shifted out; therefore, the entire memory can be read with a single command. The operation is terminated by driving S# HIGH at any time during data output. Table 23: Command/Address/Data Lines for READ MEMORY Commands Note 1 applies to entire table Command Name DUAL QUAD FAST DUAL OUTPUT INPUT/OUTPUT QUAD OUTPUT INPUT/OUTPUT READ READ FAST READ FAST READ FAST READ FAST READ 03 0B 3B BB 6B EB Extended SPI Protocol Supported Yes Yes Yes Yes Yes Yes Command Input DQ0 DQ0 DQ0 DQ0 DQ0 DQ0 Address Input DQ0 DQ0 DQ0 DQ[1:0] DQ0 DQ[3:0] Data Output DQ1 DQ1 DQ[1:0] DQ[1:0] DQ[3:0] DQ[3:0] Dual SPI Protocol Supported No Yes Yes Yes No No Command Input – DQ[1:0] DQ[1:0] DQ[1:0] – – Address Input – DQ[1:0] DQ[1:0] DQ[1:0] – – Data Output – DQ[1:0] DQ[1:0] DQ[1:0] – – Quad SPI Protocol Supported No Yes No No Yes Yes Command Input – DQ[3:0] – – DQ[3:0] DQ[3:0] Address Input – DQ[3:0] – – DQ[3:0] DQ[3:0] Data Output – DQ[3:0] – – DQ[3:0] DQ[3:0] Notes: 1. Yes in the "Supported" row for each protocol indicates that the command in that col- umn is supported; when supported, a command's functionality is identical for the entire column regardless of the protocol. For example, a FAST READ functions the same for all three protocols even though its data is input/output differently depending on the pro- tocol. 2. FAST READ is similar to READ, but requires dummy clock cycles following the address bytes and can operate at a higher frequency (fC). 09005aef845665fe 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ MEMORY Operations Figure 16: READ Command Extended 0 7 8 Cx C LSB A[MIN] DQ[0] Command MSB A[MAX] LSB DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT MSB Don’t Care Note: 1. Cx = 7 + (A[MAX] + 1). Figure 17: FAST READ Command Extended 0 7 8 Cx C LSB A[MIN] DQ0 Command MSB A[MAX] LSB DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT MSB Dummy cycles Dual 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Quad 0 1 2 Cx C LSB A[MIN] LSB DQ[3:0] Command DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Don’t Care Note: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2; For quad protocol, C = 1 + (A[MAX] + 1)/4. x 09005aef845665fe 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ MEMORY Operations Figure 18: DUAL OUTPUT FAST READ Extended 0 7 8 Cx C LSB A[MIN] LSB DQ0 Command DOUT DOUT DOUT DOUT DOUT MSB A[MAX] DQ1 High-Z DOUT DOUT DOUT DOUT DOUT MSB Dummy cycles Dual 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Note: 1. Cx = 7 + (A[MAX] + 1). Figure 19: DUAL INPUT/OUTPUT FAST READ Command Extended 0 7 8 Cx C LSB A[MIN] LSB DQ0 Command DOUT DOUT DOUT DOUT DOUT MSB DQ1 High-Z DOUT DOUT DOUT DOUT DOUT A[MAX] MSB Dummy cycles Dual 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Note: 1. Cx = 7 + (A[MAX] + 1)/2. 09005aef845665fe 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory READ MEMORY Operations Figure 20: QUAD OUTPUT FAST READ Command Extended 0 7 8 C x C LSB A[MIN] LSB DQ0 Command DOUT DOUT DOUT MSB A[MAX] DQ[2:1] High-Z DOUT DOUT DOUT DQ3 ‘1’ DOUT DOUT DOUT MSB Dummy cycles Quad 0 1 2 C x C LSB A[MIN] LSB DQ[3:0] Command DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Note: 1. Cx = 7 + (A[MAX] + 1). Figure 21: QUAD INPUT/OUTPUT FAST READ Command Extended 0 7 8 C x C LSB A[MIN] LSB DQ0 Command DOUT DOUT DOUT MSB DQ[2:1] High-Z DOUT DOUT DOUT DQ3 ‘1’ DOUT DOUT DOUT A[MAX] MSB Dummy cycles Quad 0 1 2 C x C LSB A[MIN] LSB DQ[3:0] Command DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Note: 1. Cx = 7 + (A[MAX] + 1)/4. 09005aef845665fe 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory PROGRAM Operations PROGRAM Operations PROGRAM commands are initiated by first executing the WRITE ENABLE command to set the write enable latch bit to 1. S# is then driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. The command code is input on DQ0, followed by input on DQ[n] of address bytes and at least one data byte. Each address bit is latched in during the rising edge of the clock. When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is tPP. If the bits of the least significant address, which is the starting address, are not all zero, all data transmitted beyond the end of the current page is programmed from the start- ing address of the same page. If the number of bytes sent to the device exceed the maxi- mum page size, previously latched data is discarded and only the last maximum page- size number of data bytes are guaranteed to be programmed correctly within the same page. If the number of bytes sent to the device is less than the maximum page size, they are correctly programmed at the specified addresses without any effect on the other bytes of the same page. When the operation is in progress, the write in progress bit is set to 1. The write enable latch bit is cleared to 0, whether the operation is successful or not. The status register and flag status register can be polled for the operation status. An operation can be paused or resumed by the PROGRAM/ERASE SUSPEND or PROGRAM/ERASE RESUME command, respectively. When the operation completes, the write in progress bit is cleared to 0. If the operation times out, the write enable latch bit is reset and the program fail bit is set to 1. If S# is not driven HIGH, the command is not executed, flag status register error bits are not set, and the write enable latch remains set to 1. When a command is applied to a protected sector, the command is not executed, the write enable latch bit remains set to 1, and flag status register bits 1 and 4 are set. Table 24: Data/Address Lines for PROGRAM Commands Note 1 applies to entire table Command Name Data In Address In Extended Dual Quad PAGE PROGRAM DQ0 DQ0 Yes Yes Yes DUAL INPUT FAST PROGRAM DQ[1:0] DQ0 Yes Yes No EXTENDED DUAL INPUT DQ[1:0] DQ[1:0] Yes Yes No FAST PROGRAM QUAD INPUT FAST PROGRAM DQ[3:0] DQ0 Yes No Yes EXTENDED QUAD INPUT DQ[3:0] DQ[3:0] Yes No Yes FAST PROGRAM Note: 1. Yes in the protocol columns indicates that the command is supported and has the same functionality and command sequence as other commands marked Yes. 09005aef845665fe 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory PROGRAM Operations Figure 22: PAGE PROGRAM Command Extended 0 7 8 Cx C LSB A[MIN] LSB DQ0 Command DIN DIN DIN DIN DIN DIN DIN DIN DIN MSB A[MAX] MSB Dual 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DIN DIN DIN DIN DIN MSB A[MAX] MSB Quad 0 1 2 Cx C LSB A[MIN] LSB DQ[3:0] Command DIN DIN DIN MSB A[MAX] MSB Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1). For dual SPI protocol, C = 3 + (A[MAX] + 1)/2. x For quad SPI protocol, C = 1 + (A[MAX] + 1)/4. x Figure 23: DUAL INPUT FAST PROGRAM Command Extended 0 7 8 C x C LSB A[MIN] LSB DQ0 Command DIN DIN DIN DIN DIN MSB A[MAX] DQ1 High-Z DIN DIN DIN DIN DIN MSB Dual 0 3 4 C x C LSB A[MIN] LSB DQ[1:0] Command DIN DIN DIN DIN DIN MSB A[MAX] MSB Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1). For dual SPI protocol, C = 3 + (A[MAX] + 1)/2. x 09005aef845665fe 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory PROGRAM Operations Figure 24: EXTENDED DUAL INPUT FAST PROGRAM Command Extended 0 7 8 C x C LSB A[MIN] LSB DQ0 Command DIN DIN DIN DIN DIN MSB DQ1 High-Z DIN DIN DIN DIN DIN A[MAX] MSB Dual 0 3 4 C x C LSB A[MIN] LSB DQ[1:0] Command DIN DIN DIN DIN DIN MSB A[MAX] MSB Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/2. For dual SPI protocol, C = 3 + (A[MAX] + 1)/2. x Figure 25: QUAD INPUT FAST PROGRAM Command Extended 0 7 8 C x C LSB A[MIN] LSB DQ0 Command DIN DIN DIN MSB A[MAX] DQ[3:1] High-Z DIN DIN DIN MSB Quad 0 1 2 C x C LSB A[MIN] LSB DQ[3:0] Command DIN DIN DIN MSB A[MAX] MSB Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/4. For quad SPI protocol, C = 1 + (A[MAX] + 1)/4. x 09005aef845665fe 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory PROGRAM Operations Figure 26: EXTENDED QUAD INPUT FAST PROGRAM Command Extended 0 7 8 C x C LSB A[MIN] LSB DQ0 Command DIN DIN DIN MSB DQ[2:1] High-Z DIN DIN DIN DQ3 ‘1’ DIN DIN DIN A[MAX] MSB Quad 0 1 2 C x C LSB A[MIN] LSB DQ[3:0] Command DIN DIN DIN MSB A[MAX] MSB Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/4. For quad SPI protocol, C = 1 + (A[MAX] + 1)/4. x 09005aef845665fe 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory WRITE Operations WRITE Operations WRITE ENABLE Command The WRITE ENABLE operation sets the write enable latch bit. To execute a WRITE ENA- BLE command, S# is driven LOW and held LOW until the eighth bit of the command code has been latched in, after which it must be driven HIGH. The command code is input on DQ0 for extended SPI protocol, on DQ[1:0] for dual SPI protocol, and on DQ[3:0] for quad SPI protocol. The write enable latch bit must be set before every PROGRAM, ERASE, and WRITE com- mand. If S# is not driven HIGH after the command code has been latched in, the com- mand is not executed, flag status register error bits are not set, and the write enable latch remains cleared to its default setting of 0. WRITE DISABLE Command The WRITE DISABLE operation clears the write enable latch bit. To execute a WRITE DISABLE command, S# is driven LOW and held LOW until the eighth bit of the com- mand code has been latched in, after which it must be driven HIGH. The command code is input on DQ0 for extended SPI protocol, on DQ[1:0] for dual SPI protocol, and on DQ[3:0] for quad SPI protocol. If S# is not driven HIGH after the command code has been latched in, the command is not executed, flag status register error bits are not set, and the write enable latch re- mains set to 1. 09005aef845665fe 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory WRITE Operations Figure 27: WRITE ENABLE and WRITE DISABLE Command Sequence Extended 0 1 2 3 4 5 6 7 C S# Command Bits LSB DQ0 0 0 0 0 0 1 1 0 MSB DQ1 High-Z Dual 0 1 2 3 C S# Command Bits LSB DQ0 0 0 1 0 DQ1 0 0 0 1 MSB Quad 0 1 C S# Command BitsLSB DQ0 0 0 DQ1 0 1 DQ2 0 1 DQ3 0 0 Don’t Care MSB Note: 1. Shown here is the WRITE ENABLE command code, which is 06h or 0000 0110 binary. The WRITE DISABLE command sequence is identical, except the WRITE DISABLE command code is 04h or 0000 0100 binary. 09005aef845665fe 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory ERASE Operations ERASE Operations SUBSECTOR ERASE Command To execute the SUBSECTOR ERASE command (and set the selected subsector bits set to FFh), the WRITE ENABLE command must be issued to set the write enable latch bit to 1. S# is driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. The command code is input on DQ0, followed by three address bytes; any address within the subsector is valid. Each address bit is latched in during the rising edge of the clock. When S# is driven HIGH, the opera- tion, which is self-timed, is initiated; its duration is tSSE. The operation can be suspen- ded and resumed by the PROGRAM/ERASE SUSPEND and PROGRAM/ERASE RESUME commands, respectively. If the write enable latch bit is not set, the device ignores the SUBSECTOR ERASE com- mand and no error bits are set to indicate operation failure. When the operation is in progress, the write in progress bit is set to 1. The write enable latch bit is cleared to 0, whether the operation is successful or not. The status register and flag status register can be polled for the operation status. When the operation com- pletes, the write in progress bit is cleared to 0. If the operation times out, the write enable latch bit is reset and the erase error bit is set to 1. If S# is not driven HIGH, the command is not executed, flag status register error bits are not set, and the write enable latch remains set to 1. When a command is applied to a protected subsector, the command is not executed. Instead, the write enable latch bit remains set to 1, and flag status register bits 1 and 5 are set. SECTOR ERASE Command To execute the SECTOR ERASE command (and set selected sector bits to FFh), the WRITE ENABLE command must be issued to set the write enable latch bit to 1. S# is driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. The command code is input on DQ0, followed by three address bytes; any address within the sector is valid. Each address bit is latched in during the rising edge of the clock. When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is tSE. The operation can be suspended and resumed by the PROGRAM/ERASE SUSPEND and PROGRAM/ERASE RESUME commands, re- spectively. If the write enable latch bit is not set, the device ignores the SECTOR ERASE command and no error bits are set to indicate operation failure. When the operation is in progress, the write in progress bit is set to 1 and the write ena- ble latch bit is cleared to 0, whether the operation is successful or not. The status regis- ter and flag status register can be polled for the operation status. When the operation completes, the write in progress bit is cleared to 0. If the operation times out, the write enable latch bit is reset and erase error bit is set to 1. If S# is not driven HIGH, the command is not executed, flag status register error bits are not set, and the write enable latch remains set to 1. When a command is applied to a protected sector, the command is not executed. Instead, the write enable latch bit re- mains set to 1, and flag status register bits 1 and 5 are set. 09005aef845665fe 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory ERASE Operations Figure 28: SUBSECTOR and SECTOR ERASE Command Extended 0 7 8 C x C LSB A[MIN] DQ0 Command MSB A[MAX] Dual 0 3 4 C x C LSB A[MIN] DQ0[1:0] Command MSB A[MAX] Quad 0 1 2 C x C LSB A[MIN] DQ0[3:0] Command MSB A[MAX] Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1). For dual SPI protocol, C = 3 + (A[MAX] + 1)/2. x For quad SPI protocol, C = 1 + (A[MAX] + 1)/4. x BULK ERASE Command To initiate the BULK ERASE command, the WRITE ENABLE command must be issued to set the write enable latch bit to 1. S# is driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. The com- mand code is input on DQ0. When S# is driven HIGH, the operation, which is self- timed, is initiated; its duration is tBE. If the write enable latch bit is not set, the device ignores the BULK ERASE command and no error bits are set to indicate operation failure. When the operation is in progress, the write in progress bit is set to 1 and the write ena- ble latch bit is cleared to 0, whether the operation is successful or not. The status regis- ter and flag status register can be polled for the operation status. When the operation completes, the write in progress bit is cleared to 0. If the operation times out, the write enable latch bit is reset and erase error bit is set to 1. If S# is not driven HIGH, the command is not executed, the flag status register error bits are not set, and the write enable latch remains set to 1. The command is not executed if any sector is locked. Instead, the write enable latch bit remains set to 1, and flag status register bits 1 and 5 are set. 09005aef845665fe 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory ERASE Operations Figure 29: BULK ERASE Command Extended 0 7 C LSB DQ0 Command MSB Dual 0 3 C LSB DQ[1:0] Command MSB Quad 0 1 C LSB DQ[3:0] Command MSB PROGRAM/ERASE SUSPEND Command To initiate the PROGRAM/ERASE SUSPEND command, S# is driven LOW. The com- mand code is input on DQ0. The operation is terminated by the PROGRAM/ERASE RE- SUME command. PROGRAM/ERASE SUSPEND command enables the memory controller to interrupt and suspend an array PROGRAM or ERASE operation within the program/erase latency. If a SUSPEND command is issued during a PROGRAM operation, then the flag status register bit 2 is set to 1. After erase/program latency time, the flag status register bit 7 is also set to 1, showing the device to be in a suspended state, waiting for any operation (see the Operations Allowed/Disallowed During Device States table). If a SUSPEND command is issued during an ERASE operation, then the flag status regis- ter bit 6 is set to 1. After erase/program latency time, the flag status register bit 7 is also set to 1, showing that device to be in a suspended state, waiting for any operation (see the Operations Allowed/Disallowed During Device States table). If the time remaining to complete the operation is less than the suspend latency, the de- vice completes the operation and clears the flag status register bits 2 or 6, as applicable. Because the suspend state is volatile, if there is a power cycle, the suspend state infor- mation is lost and the flag status register powers up as 80h. During an ERASE SUSPEND operation, a PROGRAM or READ operation is possible in any sector except the one in a suspended state. Reading from a sector that is in a sus- pended state will output indeterminate data. The device ignores a PROGRAM com- mand to a sector that is in an ERASE SUSPEND state; it also sets the flag status register bit 4 to 1: program failure/protection error, and leaves the write enable latch bit un- changed. The commands allowed during an erase suspend state include the WRITE LOCK REGISTER command, the WRITE VOLATILE CONFIGURATION REGISTER com- 09005aef845665fe 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory ERASE Operations mand, and the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command. When the ERASE operation resumes, it does not check the new lock status of the WRITE LOCK REGISTER command. During a PROGRAM SUSPEND operation, a READ operation is possible in any page ex- cept the one in a suspended state. Reading from a page that is in a suspended state will output indeterminate data. The commands allowed during a program suspend state in- clude the WRITE VOLATILE CONFIGURATION REGISTER command and the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command. It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/ ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then issue a PROGRAM command and suspend it also. With the two operations suspended, the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec- ond PROGRAM/ERASE RESUME command resumes the former (or first) operation. Table 25: Suspend Parameters Parameter Condition Typ Max Units Notes Erase to suspend Sector erase or erase resume to erase suspend 150 – µs 1 Program to suspend Program resume to program suspend 5 – µs 1 Subsector erase to sus- Subsector erase or subsector erase resume to erase sus- 50 – µs 1 pend pend Suspend latency Program 7 – µs 2 Suspend latency Subsector erase 15 – µs 2 Suspend latency Erase 15 – µs 3 Notes: 1. Timing is not internally controlled. 2. Any READ command accepted. 3. Any command except the following are accepted: SECTOR, SUBSECTOR, or BULK ERASE; WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO- GRAM OTP. Table 26: Operations Allowed/Disallowed During Device States Note 1 applies to entire table Standby Program or Subsector Erase Suspend or Erase Suspend Operation State Erase State Program Suspend State State Notes READ Yes No Yes Yes 2 PROGRAM Yes No No Yes/No 3 ERASE Yes No No No 4 WRITE Yes No No No 5 WRITE Yes No Yes Yes 6 READ Yes Yes Yes Yes 7 SUSPEND No Yes No No 8 Notes: 1. The device can be in only one state at a time. Depending on the state of the device, some operations are allowed (Yes) and others are not (No). For example, when the de- vice is in the standby state, all operations except SUSPEND are allowed in any sector. For all device states except the erase suspend state, if an operation is allowed or disallowed 09005aef845665fe 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory ERASE Operations in one sector, it is allowed or disallowed in all other sectors. In the erase suspend state, a PROGRAM operation is allowed in any sector except the one in which an ERASE opera- tion has been suspended. 2. All READ operations except READ STATUS REGISTER and READ FLAG REGISTER. When is- sued to a sector or subsector that is simultaneously in an erase suspend state, the READ operation is accepted, but the data output is not guaranteed until the erase has comple- ted. 3. All PROGRAM operations except PROGRAM OTP. In the erase suspend state, a PROGRAM operation is allowed in any sector (Yes) except the sector (No) in which an ERASE opera- tion has been suspended. 4. Applies to the SECTOR ERASE or SUBSECTOR ERASE operation. 5. Applies to the following operations: WRITE STATUS REGISTER, WRITE NONVOLATILE CONFIGURATION REGISTER, PROGRAM OTP, and BULK ERASE. 6. Applies to the following operations: WRITE ENABLE, WRITE DISABLE, CLEAR FLAG STA- TUS REGISTER, WRITE LOCK REGISTER, WRITE VOLATILE, and ENHANCED VOLATILE CON- FIGURATION REGISTER. 7. Applies to the READ STATUS REGISTER or READ FLAG STATUS REGISTER operation. 8. Applies to the PROGRAM SUSPEND or ERASE SUSPEND operation. PROGRAM/ERASE RESUME Command To initiate the PROGRAM/ERASE RESUME command, S# is driven LOW. The command code is input on DQ0. The operation is terminated by driving S# HIGH. When this command is executed, the status register write in progress bit is set to 1, and the flag status register program erase controller bit is set to 0. This command is ignored if the device is not in a suspended state. 09005aef845665fe 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory ONE TIME PROGRAMMABLE Operations ONE TIME PROGRAMMABLE Operations READ OTP ARRAY Command To initiate a READ OTP ARRAY command, S# is driven LOW. The command code is in- put on DQ0, followed by three bytes and dummy clock cycles. Each address bit is latch- ed in during the rising edge of C. Data is shifted out on DQ1, beginning from the speci- fied address and at a maximum frequency of fC (MAX) on the falling edge of the clock. The address increments automatically to the next address after each byte of data is shif- ted out. There is no rollover mechanism; therefore, if read continuously, after location 40h, the device continues to output data at location 40h. The operation is terminated by driving S# HIGH at any time during data output. Figure 30: READ OTP Command Extended 0 7 8 Cx C LSB A[MIN] DQ0 Command MSB A[MAX] LSB DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT MSB Dual Dummy cycles 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Quad 0 1 2 Cx C LSB A[MIN] LSB DQ[3:0] Command DOUT DOUT DOUT MSB A[MAX] MSB Dummy cycles Don’t Care Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1). For dual SPI protocol, C = 3 + (A[MAX] + 1)/2. x For quad SPI protocol, C = 1 + (A[MAX] + 1)/4. x PROGRAM OTP ARRAY Command To initiate the PROGRAM OTP ARRAY command, the WRITE ENABLE command must be issued to set the write enable latch bit to 1; otherwise, the PROGRAM OTP ARRAY command is ignored and flag status register bits are not set. S# is driven LOW and held LOW until the eighth bit of the last data byte has been latched in, after which it must be driven HIGH. The command code is input on DQ0, followed by three bytes and at least one data byte. Each address bit is latched in during the rising edge of the clock. When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is tPOTP. There is no rollover mechanism; therefore, after a maximum of 65 bytes are latched in and subsequent bytes are discarded. 09005aef845665fe 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory ONE TIME PROGRAMMABLE Operations PROGRAM OTP ARRAY programs, at most, 64 bytes to the OTP memory area and one OTP control byte. When the operation is in progress, the write in progress bit is set to 1. The write enable latch bit is cleared to 0, whether the operation is successful or not, and the status register and flag status register can be polled for the operation status. When the operation completes, the write in progress bit is cleared to 0. If the operation times out, the write enable latch bit is reset and the program fail bit is set to 1. If S# is not driven HIGH, the command is not executed, flag status register error bits are not set, and the write enable latch remains set to 1. The OTP control byte (byte 64) is used to permanently lock the OTP memory array. Table 27: OTP Control Byte (Byte 64) Bit Name Settings Description 0 OTP control byte 0 = Locked Used to permanently lock the OTP array (byte 64). When bit 0 = 1, the 1 = Unlocked OTP array can be programmed. When bit 0 = 0, the OTP array is read only. (Default) Once bit 0 has been programmed to 0, it can no longer be changed to 1. PROGRAM OTP ARRAY is ignored, write enable latch bit remains set, and flag status register bits 1 and 4 are set. Figure 31: PROGRAM OTP Command Extended 0 7 8 Cx C LSB A[MIN] LSB DQ0 Command DIN DIN DIN DIN DIN DIN DIN DIN DIN MSB A[MAX] MSB Dual 0 3 4 Cx C LSB A[MIN] LSB DQ[1:0] Command DIN DIN DIN DIN DIN MSB A[MAX] MSB Quad 0 1 2 Cx C LSB A[MIN] LSB DQ[3:0] Command DIN DIN DIN MSB A[MAX] MSB Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1). For dual SPI protocol, C = 3 + (A[MAX] + 1)/2. x For quad SPI protocol, C = 1 + (A[MAX] + 1)/4. x 09005aef845665fe 57 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory XIP Mode XIP Mode Execute-in-place (XIP) mode allows the memory to be read by sending an address to the device and then receiving the data on one, two, or four pins in parallel, depending on the customer requirements. XIP mode offers maximum flexibility to the application, saves instruction overhead, and reduces random access time. Activate or Terminate XIP Using Volatile Configuration Register Applications that boot in SPI and must switch to XIP use the volatile configuration reg- ister. XIP provides faster memory READ operations by requiring only an address to exe- cute, rather than a command code and an address. To activate XIP requires two steps. First, enable XIP by setting volatile configuration reg- ister bit 3 to 0. Next, drive the XIP confirmation bit to 0 during the next FAST READ op- eration. XIP is then active. Once in XIP, any command that occurs after S# is toggled re- quires only address bits to execute; a command code is not necessary, and device oper- ations use the SPI protocol that is enabled. XIP is terminated by driving the XIP confir- mation bit to 1. The device automatically resets volatile configuration register bit 3 to 1. Note: For devices with basic XIP, indicated by a part number feature set digit of 2 or 4, it is not necessary to set the volatile configuration register bit 3 to 0 to enable XIP. Instead, it is enabled by setting the XIP confirmation bit to 0 during the first dummy clock cycle after any FAST READ command. Activate or Terminate XIP Using Nonvolatile Configuration Register Applications that must boot directly in XIP use the nonvolatile configuration register. To enable a device to power-up in XIP using the nonvolatile configuration register, set non- volatile configuration register bits [11:9]. Settings vary according to protocol, as ex- plained in the Nonvolatile Configuration Register section. Because the device boots di- rectly in XIP, the confirmation bit is already set to 0, and after the next power cycle, XIP is active. Once in XIP, a command code is unnecessary, and device operations use the SPI protocol currently enabled. XIP is terminated by driving the XIP confirmation bit to 1. Figure 32: XIP Mode Directly After Power-On Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 C Mode 0 tVSI (<100µ) VCC NVCR check: XIP enabled S# A[MIN] LSB DQ0 Xb DOUTDOUTDOUTDOUTDOUT DQ[3:1] DOUTDOUTDOUTDOUTDOUT A[MAX] MSB Dummy cycles 09005aef845665fe 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory XIP Mode Note: 1. Xb is the XIP confirmation bit and should be set as follows: 0 to keep XIP state; 1 to exit XIP mode and return to standard read mode. Confirmation Bit Settings Required to Activate or Terminate XIP The XIP confirmation bit setting activates or terminates XIP after it has been enabled or disabled. This bit is the value on DQ0 during the first dummy clock cycle in the FAST READ operation. XIP requires at least one additional clock cycle to send the XIP confir- mation bit to the memory on DQ0 during the first dummy clock cycle. Table 28: XIP Confirmation Bit Bit Value Description 0 Activates XIP: While this bit is 0, XIP remains activated. 1 Terminates XIP: When this bit is set to 1, XIP is terminated and the device returns to SPI. Table 29: Effects of Running XIP in Different Protocols Protocol Effect Notes Extended I/O, In a device with a dedicated part number where RST# is enabled, a LOW pulse on RST# Dual I/O resets XIP and the device to the state it was in previous to the last power-up, as defined by the nonvolatile configuration register. Dual I/O Values of DQ1 during the first dummy clock cycle are "Don't Care." Quad I/O Values of DQ[3:1] during the first dummy clock cycle are "Don't Care." 1 In a device with a dedicated part number where RST# is enabled, a LOW pulse on RST# resets XIP and the device to the state it was in previous to the last power-up, as defined by the nonvolatile configuration register. Note: 1. In a device with a dedicated part number, memory can be reset only when the device is deselected. Terminating XIP After a Controller and Memory Reset The system controller and the device can become out of synchronization if, during the life of the application, the system controller is reset without the device being reset. In such a case, the controller can reset the memory to power-on reset if the memory has reset functionality. (Reset is available in devices with a dedicated part number.) If reset functionality is not available, has been disabled, or is not supported by the con- troller, the controller must execute the following sequence to terminate XIP in the memory device. In quad I/O protocol, drive DQ0 = 1 with S# held LOW for seven clock cycles; S# must driven HIGH before the eighth clock cycle. In dual I/O protocol, drive DQ0 = 1 with S# held LOW for 13 clock cycles; S# must driven HIGH before the four- teenth clock cycle. If the device is in extended protocol, drive DQ0 = 1 with S# held LOW for 25 clock cycles; S# must driven HIGH before the twenty-sixth clock cycle. These sequences cause the controller to set the XIP confirmation bit to 1, thereby termi- nating XIP. However, it does not reset the device or interrupt PROGRAM/ERASE opera- tions that may be in progress. After terminating XIP, the controller must execute RESET ENABLE and RESET MEMORY to implement a software reset and reset the device. 09005aef845665fe 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Power-Up and Power-Down Power-Up and Power-Down Power-Up and Power-Down Requirements At power-up and power-down, the device must not be selected; that is, S# must follow the voltage applied on V until V reaches the correct values: V at power-up and CC CC CC,min V at power-down. SS To avoid data corruption and inadvertent WRITE operations during power-up, a power- on reset circuit is included. The logic inside the device is held to RESET while V is less CC than the power-on reset threshold voltage shown here; all operations are disabled, and the device does not respond to any instruction. During a standard power-up phase, the device ignores all commands except READ STATUS REGISTER and READ FLAG STATUS REGISTER. These operations can be used to check the memory internal state. After power-up, the device is in standby power mode; the write enable latch bit is reset; the write in progress bit is reset; and the lock registers are configured as: (write lock bit, lock down bit) = (0,0). Normal precautions must be taken for supply line decoupling to stabilize the V sup- CC ply. Each device in a system should have the V line decoupled by a suitable capacitor CC (typically 100nF) close to the package pins. At power-down, when V drops from the CC operating voltage to below the power-on-reset threshold voltage shown here, all opera- tions are disabled and the device does not respond to any command. Note: If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress, data corruption may result. V must be applied only when V is stable and in the V to V voltage PPH CC CC,min CC,max range. Figure 33: Power-Up Timing V CC V CC,max Chip selection not allowed V CC,min Chip tVTW = tVTR reset V Polling allowed Device fully accessible WI SPI protocol Starting protocol defined by NVCR WIP = 1 WIP = 0 WEL = 0 WEL = 0 Time 09005aef845665fe 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Power-Up and Power-Down Table 30: Power-Up Timing and V Threshold WI Note 1 applies to entire table Symbol Parameter Min Max Unit tVTR V to read – 150 µs CC,min tVTW V to device fully accessible – 150 µs CC,min V Write inhibit voltage 1.5 2.5 V WI Note: 1. Parameters listed are characterized only. Power Loss Rescue Sequence If a power loss occurs during a WRITE NONVOLATILE CONFIGURATION REGISTER command, after the next power-on, the device might begin in an undetermined state (XIP mode or an unnecessary protocol). If this happens, until the next power-up, a res- cue sequence must reset the device to a fixed state (extended SPI protocol without XIP). After the rescue sequence, the issue should be resolved by running the WRITE NONVO- LATILE CONFIGURATION REGISTER command again. The rescue sequence is com- posed of two parts that must be run in the correct order. During the entire sequence, tSHSL2 must be at least 50ns. The first part of the sequence is DQ0 (PAD DATA) and DQ3 (PAD HOLD) equal to 1 for the situations listed below: • 7 clock cycles within S# LOW (S# becomes HIGH before 8th clock cycle) • + 13 clock cycles within S# LOW (S# becomes HIGH before 14th clock cycle) • + 25 clock cycles within S# LOW (S# becomes HIGH before 26th clock cycle) The second part of the sequence is exiting from dual or quad SPI protocol by using the following FFh sequence: DQ0 and DQ3 equal to 1 for 8 clock cycles within S# LOW; S# becomes HIGH before 9th clock cycle. After this two-part sequence the extended SPI protocol is active. 09005aef845665fe 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Reset Specifications AC Reset Specifications Table 31: AC RESET Conditions Note 1 applies to entire table Parameter Symbol Conditions Min Typ Max Unit Reset pulse tRLRH2 50 – – ns width Reset recovery tRHSL Device deselected (S# HIGH) and is in XIP mode – – 40 ns time Device deselected (S# HIGH) and is in standby mode – – 40 ns Commands are being decoded, any READ operations are – – 40 ns in progress or any WRITE operation to volatile registers are in progress Any device array PROGRAM/ERASE/SUSPEND/RESUME, – – 30 µs PROGRAM OTP, NONVOLATILE SECTOR LOCK, and ERASE NONVOLATILE SECTOR LOCK ARRAY operations are in progress While a WRITE STATUS REGISTER operation is in progress – tW – ms While a WRITE NONVOLATILE CONFIGURATION REGIS- – tWNVCR – ms TER operation is in progress On completion or suspension of a SUBSECTOR ERASE op- – tSSE – s eration Software reset tSHSL3 Device deselected (S# HIGH) and is in standby mode – – 90 ns recovery time On completion of any device array PROGRAM/ERASE/ – – 30 µs SUSPEND/RESUME, SECTOR ERASE, PROGRAM OTP, PAGE PROGRAM, DUAL INPUT FAST PROGRAM, EXTENDED DUAL INPUT FAST PROGRAM, QUAD INPUT FAST PRO- GRAM, or EXTENDED QUAD INPUT FAST PROGRAM op- eration On completion or suspension of a WRITE STATUS REGIS- – tW – ms TER operation On completion or suspension of a WRITE NONVOLATILE – tWNVCR – ms CONFIGURATION REGISTER operation On completion or suspension of a SUBSECTOR ERASE op- – tSSE – s eration S# deselect to tSHRV Deselect to reset valid in quad output or in QIO-SPI 2 – – ns reset valid Notes: 1. Values are guaranteed by characterization; not 100% tested. 2. The device reset is possible but not guaranteed if tRLRH < 50ns. 09005aef845665fe 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Reset Specifications Figure 34: Reset AC Timing During PROGRAM or ERASE Cycle S# tSHRH tRHSL tRLRH RESET# Don’t Care Figure 35: Reset Enable 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 C tSHSL2 tSHSL3 Reset enable Reset memory S# DQ0 Figure 36: Serial Input Timing tSHSL S# tCHSL tSLCH tCHSH tSHCH C tCHCL tDVCHtCHDX tCLCH DQ0 MSB in LSB in DQ1 High-Z High-Z Don’t Care 09005aef845665fe 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Reset Specifications Figure 37: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) W#/V PP tWHSL tSHWL S# C DQ0 DQ1 High-Z High-Z Don’t Care 09005aef845665fe 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Reset Specifications Figure 38: Hold Timing S# tCHHL tHLCH tHHCH C tCHHH tHLQZ tHHQX DQ0 DQ1 HOLD# Don’t Care 09005aef845665fe 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Reset Specifications Figure 39: Output Timing S# tCLQV tCLQV tCL tCH C tCLQX tCLQX tSHQZ DQ0 LSB out DQ1 Address LSB in Don’t Care Figure 40: V Timing PPH End of command (identified by WIP polling) S# C DQ0 tVPPHSL V PPH V PP 09005aef845665fe 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Absolute Ratings and Operating Conditions Absolute Ratings and Operating Conditions Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only. Exposure to absolute maximum rating and operating conditions for extended periods may adversely affect reliability. Stressing the device beyond the abso- lute maximum ratings may cause permanent damage. Table 32: Absolute Ratings Symbol Parameter Min Max Units Notes T Storage temperature –65 150 °C STG T Lead temperature during soldering – See note 1 °C LEAD V Supply voltage –0.6 4.0 V CC V Fast program/erase voltage –0.2 10 V PP V Input/output voltage with respect to ground –0.6 V + 0.6 V IO CC V Electrostatic discharge voltage –2000 2000 V 2 ESD (human body model) Notes: 1. Compliant with JEDEC Standard J-STD-020C (for small-body, Sn-Pb or Pb assembly), RoHS, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU. 2. JEDEC Standard JESD22-A114A (C1 = 100pF, R1 = 1500Ω, R2 = 500Ω). Table 33: Operating Conditions Symbol Parameter Min Max Units V Supply voltage 2.7 3.6 V CC V Supply voltage on V 8.5 9.5 V PPH PP T Ambient operating temperature –40 85 °C A T Ambient operating temperature, automotive –40 125 °C A Table 34: Input/Output Capacitance Note 1 applies to entire table Symbol Description Test Condition Min Max Units C Input/output capacitance V = 0V – 8 pF IN/OUT OUT (DQ0/DQ1/DQ2/DQ3) C Input capacitance (other pins) V = 0V – 6 pF IN IN Note: 1. These parameters are sampled only, not 100% tested. TA = 25°C at 54 MHz. 09005aef845665fe 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Absolute Ratings and Operating Conditions Table 35: AC Timing Input/Output Conditions Symbol Description Min Max Units Notes C Load capacitance 30 30 pF 1 L – Input rise and fall times – 5 ns Input pulse voltages 0.2V to 0.8V V 2 CC CC Input timing reference voltages 0.3V to 0.7V V CC CC Output timing reference voltages V /2 V /2 V CC CC Notes: 1. Output buffers are configurable by user. 2. For quad/dual operations: 0V to V . CC Figure 41: AC Timing Input/Output Reference Levels Input levels1 I/O timing reference levels 0.8V CC 0.7V CC 0.5V CC 0.3V 0.2V CC CC Note: 1. 0.8VCC = VCC for dual/quad operations; 0.2VCC = 0V for dual/quad operations. 09005aef845665fe 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory DC Characteristics and Operating Conditions DC Characteristics and Operating Conditions Table 36: DC Current Characteristics and Operating Conditions Parameter Symbol Test Conditions Typ(1) Max Unit Input leakage current I – – ±2 µA LI Output leakage current I – – ±2 µA LO Standby current I S = V , V = V or V 14 100 µA CC1 CC IN SS CC Standby current (automotive) Icc1 S = V , V = V or V 14 150 µA CC SS CC Operating current I C = 0.1V /0.9V at 108 MHz, DQ1 – 15 mA CC3 CC CC (fast-read extended I/O) = open C = 0.1V /0.9V at 54 MHz, DQ1 – 6 mA CC CC = open Operating current (fast-read dual I/O) C = 0.1V /0.9V at 108 MHz – 18 mA CC CC Operating current (fast-read quad I/O) C = 0.1V /0.9V at 108 MHz – 20 mA CC CC Operating current (program) I S# = V – 20 mA CC4 CC Operating current (write status regis- I S# = V – 20 mA CC5 CC ter) Operating current (erase) I S# = V – 20 mA CC6 CC Note: 1. Typical values given for TA = 25C and nominal Vcc Table 37: DC Voltage Characteristics and Operating Conditions Parameter Symbol Conditions Min Max Unit Input low voltage V –0.5 0.3V V IL CC Input high voltage V 0.7V V + 0.4 V IH CC CC Output low voltage V I = 1.6mA – 0.4 V OL OL Output high voltage V I = –100µA V - 0.2 – V OH OH CC 09005aef845665fe 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Characteristics and Operating Conditions – Standard AC Characteristics and Operating Conditions – Standard Table 38: AC Characteristics and Operating Conditions – Standard Specifications Parameter Symbol Min Typ1 Max Unit Notes Clock frequency for all commands other than fC DC – 108 MHz – READ (SPI-ER, QIO-SPI protocol) Clock frequency for READ commands fR DC – 54 MHz – Clock HIGH time tCH 4 – – ns 2 Clock LOW time tCL 4 – – ns 1 Clock rise time (peak-to-peak) tCLCH 0.1 – – V/ns 3, 4 Clock fall time (peak-to-peak) tCHCL 0.1 – – V/ns 3, 4 S# active setup time (relative to clock) tSLCH 4 – – ns – S# not active hold time (relative to clock) tCHSL 4 – – ns – Data in setup time tDVCH 2 – – ns – Data in hold time tCHDX 3 – – ns – S# active hold time (relative to clock) tCHSH 4 – – ns – S# not active setup time (relative to clock) tSHCH 4 – – ns – S# deselect time after a READ command tSHSL1 20 – – ns – S# deselect time after a nonREAD command tSHSL2 50 – – ns – Output disable time tSHQZ – – 8 ns 3 Clock LOW to output valid under 30pF tCLQV – – 7 ns – Clock LOW to output valid under 10pF – – 5 ns – Output hold time (clock LOW) tCLQX 1 – – ns – Output hold time (clock HIGH) tCHQX 1 – – ns – HOLD command setup time (relative to clock) tHLCH 4 – – ns – HOLD command hold time (relative to clock) tCHHH 4 – – ns – HOLD command setup time (relative to clock) tHHCH 4 – – ns – HOLD command hold time (relative to clock) tCHHL 4 – – ns – HOLD command to output Low-Z tHHQX – – 8 ns 3 HOLD command to output High-Z tHLQZ – – 8 ns 3 Write protect setup time tWHSL 20 – – ns 5 Write protect hold time tSHWL 100 – – ns 5 Enhanced V HIGH to S# LOW for extended tVPPHSL 200 – – ns 6 PPH and dual I/O page program WRITE STATUS REGISTER cycle time tW – 1.3 8 ms – Write NONVOLATILE CONFIGURATION REGIS- tWNVCR – 0.2 3 s – TER cycle time CLEAR FLAG STATUS REGISTER cycle time tCFSR – 40 – ns – WRITE VOLATILE CONFIGURATION REGISTER tWVCR – 40 – ns – cycle time WRITE VOLATILE ENHANCED CONFIGURATION tWRVECR – 40 – ns – REGISTER cycle time 09005aef845665fe 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Characteristics and Operating Conditions – Enhanced Table 38: AC Characteristics and Operating Conditions – Standard Specifications (Continued) Parameter Symbol Min Typ1 Max Unit Notes PAGE PROGRAM cycle time (256 bytes) tPP – 0.5 5 ms 7 PAGE PROGRAM cycle time (n bytes) – int(n/8) × 5 ms 7 0.0158 PAGE PROGRAM cycle time, V = V (256 – 0.4 5 ms 7 PP PPH bytes) PROGRAM OTP cycle time (64 bytes) – 0.2 – ms 7 Subsector ERASE cycle time tSSE – 0.25 0.8 s – Sector ERASE cycle time tSE – 0.7 3 s – Sector ERASE cycle time (with V = V ) – 0.6 3 s – PP PPH Bulk ERASE cycle time tBE – 170 250 s – Bulk ERASE cycle time (with V = V ) – 160 250 s – PP PPH Notes: 1. Typical values given for TA = 25 °C. 2. tCH + tCL must add up to 1/fC. 3. Value guaranteed by characterization; not 100% tested. 4. Expressed as a slew-rate. 5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS REGISTER WRITE is set to 1. 6. V should be kept at a valid level until the PROGRAM or ERASE operation has comple- PPH ted and its result (success or failure) is known. 7. When using the PAGE PROGRAM command to program consecutive bytes, optimized timings are obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 < n < 256). 8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16. AC Characteristics and Operating Conditions – Enhanced Table 39: AC Characteristics and Operating Conditions – Enhanced Specifications Note 1 applies to entire table. Parameter Symbol Min Typ Max Unit Notes PAGE PROGRAM cycle time (256 bytes) tPP – 0.2 0.4 ms 2 PAGE PROGRAM cycle time (n bytes) – int(n/8) × 0.4 ms 2, 3 0.01 PAGE PROGRAM cycle time, V = V (256 – 0.2 0.4 ms 2 PP PPH bytes) PROGRAM OTP cycle time (64 bytes) – 0.2 – ms 2 Subsector ERASE cycle time tSSE – 0.06 0.2 s – Sector ERASE cycle time tSE – 0.3 1 s – Sector ERASE cycle time (with V = V ) – 0.3 1 s – PP PPH 09005aef845665fe 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory AC Characteristics and Operating Conditions – Enhanced Table 39: AC Characteristics and Operating Conditions – Enhanced Specifications (Continued) Note 1 applies to entire table. Parameter Symbol Min Typ Max Unit Notes Bulk ERASE cycle time tBE – 46 250 s – Bulk ERASE cycle time (with V = V ) – 46 250 s – PP PPH Notes: 1. These values are valid for product N25Q128A13Exx4xx from week code 36 2014 on- wards. 2. When using the PAGE PROGRAM command to program consecutive bytes, optimized timings are obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 < n < 256). 3. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16. 09005aef845665fe 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Package Dimensions Package Dimensions Figure 42: V-PDFN-8 6mm x 5mm Sawn (MLP8) – Package Code: F7 6 TYP Pin 1 ID Pin 1 ID laser marking Pin 1 ID option 5 TYP 3.00 ±0.20 1.27 TYP +0.08 3.00 ±0.20 0.40 -0.05 +0.15 0.6 -0.1 0.80 ±0.10 0.1 C 0.08 C Seating plane Leads coplinarity 0.20 TYP C +0.03 0.02 -0.02 Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 09005aef845665fe 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Package Dimensions Figure 43: V-PDFN-8 8mm x 6mm (MLP8) – Package Code: F8 A 8.00 TYP aaa C Pin 1 ID B Ø0.3 Pin 1 ID R 0.20 P 8 1 Y T 7 2 7 2 1. 1.27 6.00 TYP 4.80 TYP × TYP 1) 6 3 E - N ( 5 4 B +0.08 A C -0.05 0.40 -0.05 CC aaa 0.50+0.10 0.2 5.16 TYP MM MIN eeefff bbb C ddd C 0.85 TYP/ 0.05 MAX 1 MAX Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 09005aef845665fe 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Package Dimensions Figure 44: T-PBGA-24b05 6mm x 8mm – Package Code: 12 0.79 TYP Seating plane A 0.1 A 24X Ø0.40 ±0.05 Ball A1 ID 5 4 3 2 1 Ball A1 ID A B 4.00 C 8 ±0.10 D 1.00 TYP E 1.00 TYP 1.20 MAX 4.00 0.20 MIN 6 ±0.10 Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 09005aef845665fe 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Package Dimensions Figure 45: T-PBGA-24b05 6mm x 8mm – Package Code: 14 Seating plane 0.1 A A 24X Ø0.4 Dimensions apply to solder balls post- Ball A1 ID Ball A1 ID reflow on Ø0.4 SMD ball pads. 4 3 2 1 A B 5 CTR C 8 ±0.1 D E 1 TYP F 1 TYP 1.08 ±0.12 3 CTR 0.2 MIN 6 ±0.1 Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 09005aef845665fe 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Package Dimensions Figure 46: SOP2-16 (300 mils body width) – Package Code: SF 10.30 ±0.20 h x 45° 16 9 0.23 MIN/ 10.00 MIN/ 0.32 MAX 10.65 MAX 7.50 ±0.10 1 8 0° MIN/8° MAX 2.5 ±0.15 0.20 ±0.1 0.1 Z 0.33 MIN/ 0.40 MIN/ 0.51 MAX 1.27 TYP Z 1.27 MAX Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 09005aef845665fe 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Package Dimensions Figure 47: SOP2-8 (208 mils body width) – Package Code: SE 1.70 MIN/ 1.78 MIN/ 1.91 MAX 2.16 MAX 0.15 MIN/ 0.25 MAX 0.36 MIN/ 0.48 MAX 0.1 MAX 1.27 TYP 5.08 MIN/ 5.49 MAX 7.70 MIN/ 8.10 MAX 5.08 MIN/ 5.49 MAX 1 0.05 MIN/ 0.25 MAX 0º MIN/ 0.5 MIN/ 10º MAX 0.8 MAX Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 09005aef845665fe 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Part Number Ordering Information Part Number Ordering Information Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at micron.com. To com- pare features and specifications by device type, visit micron.com/products. Contact the factory for devices not found. For more information on how to identify products and top-side marking by the process identification letter, refer to technical note TN-12-24, "Serial Flash Memory Device Marking for the M25P, M25PE, M25PX, and N25Q Product Families." Table 40: Part Number Information Part Number Category Category Details Notes Device type N25Q = Serial NOR Flash memory, Multiple Input/Output (Single, Dual, Quad I/O), XIP Density 128 = 128Mb Technology A = 65nm Feature set 1 = Byte addressability; HOLD pin; Micron XIP 2 = Byte addressability; HOLD pin; Basic XIP 3 = Byte addressability; RST# pin; Micron XIP 4 = Byte addressability; RST# pin; Basic XIP Operating voltage 3 = V = 2.7 to 3.6V CC Block structure E = Uniform (64KB and 4KB) Package F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x 5mm) (RoHS-compliant) F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm) 12 = T-PBGA-24b05 6mm x 8mm 14 = T-PBGA-24b05 6mm x 8mm, 4x6 ball array SF = SOP2-16 300 mils body width (SO16W) SE = SOP2-8 208 mils body width (SO8W) Temperature and 4 = IT: –40°C to +85°C; Device tested with standard test flow test flow A = Automotive temperature range: –40 to +125°C; Device tested with high reliability cer- tified test flow H = IT: –40°C to +85°C; Device tested with high reliability certified test flow Security features 0 = Default 1 Shipping material E = Tray F = Tape and reel G = Tube Note: 1. Additional secure options are available upon customer request. 09005aef845665fe 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Part Number Ordering Information Table 41: Package Details Micron SPI and JEDEC Shortened M25P M25P Package Package M45PE N25Q M45PE Pack- Alternate Name Name Package Description Symbol Symbol age Names Package Name V-PDFN-8 DFN/6mm x Very thin, plastic small-out- MS F7 MLP8, DFN8, V-PSON1-8/6mm 6mm x 5mm 5mm Sawn line, 8 terminal pads (no VDFPN8, x 5mm Sawn, Sawn leads), 6mm x 5mm Sawn VFQFPN8 VSON V-PDFN-8 DFN/8mm x Very thin, plastic small out- ME F8 MLP8, VDFPN8 V-PSON1-8/8mm 8mm x 6mm 6mm line, 8 terminal pads (no x 6mm, VSON leads), 8mm x 6mm T-PBGA- TBGA 24 Thin plastic ball grid array, 24 ZM 12 TBGA24 6mm x – 24b05/6mm x balls, 6mm x 8mm 8mm 8mm T-PBGA- TBGA 24 Thin plastic ball grid array, 24 – 14 TBGA24 6mm x – 24b05/6mm x balls, 6mm x 8mm, 8mm 8mm 4x6 ball array 4x6 ball array 4x6 ball array SOP2- 16/ SO16W Small-outline integrated cir- MF SF SO16 wide 300 SOIC-16/300 mil, 300 mil cuit, 16 pins, wide (300 mil) mil body width SOP 16L 300 mil SOP2- 8/ SO8W Small-outline integrated cir- MW SE SO8 wide 208 – 208 mil cuit, 8-pins, wide (208 mil) mil body width 09005aef845665fe 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Revision History Revision History Rev. T – 02/2018 • Added Important Notes and Warnings section for further clarification aligning to in- dustry standards Rev. S – 11/2014 • Reviewed the SFDP table Rev. R - 07/2014 • Added I for automotive CC1 • Added AC characteristics and operating conditions table for enhanced program and erase speed devices Rev. Q – 05/2014 • Added to volatile configuration register, XIP settings column: description of Enable and Disable. Rev. P – 06/2013 • Added T-PBGA-24b05 6mm x 8mm, 4x6 ball array ballout and package information Rev. O – 04/2013 • Updated the Nonvolatile Configuration Register Bit Definitions table Rev. N – 01/2013 • Updated SOP2-8 (208 mils body width) - Package Code: SE in Package Dimensions • Updated the READ ID Operation figure in READ ID Operations • Updated ERASE Operations • Added link to part number chart in Part Number Ordering Information • Updated part numbers in Features Rev. M – 07/2012 • Updated part numbers Rev. L – 06/2012 • Updated tSSE specification in AC Reset Conditions table Rev. K – 02/2012 • Changed status register bit 6 to indicate block protect instead of reserved Rev. J – 12/2011 • Updated note for Read ID Data Out table 09005aef845665fe 81 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Revision History Rev. I – 10/2011 • Added READ ENHANCED VOLATILE CONFIGURATION REGISTER command and WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command to Command Set Rev. H – 08/2011 • Updated SOP2-8 (208 mils body width) - Package Code: SE in Package Dimensions Rev. G – 08/2011 • Micron rebrand Rev. F – 02/2011 • Updated order information Rev. E – 01/2011 • Updated functionality Rev. D – 10/2010 • Added the following packages: F6 = VDFPN8 6 x 5 mm (MLP 6 x 5) (RoHS compliant); SE = SO8W (SO8 208 mils body width) (RoHS compliant) • Changed the Typical specification for Erase to Suspend and Subsector • Erase to Suspend in Operations Allowed / Disallowed During Device States • Added tBE with V = V and tSE with sector erase V = V , TYP = 0.6s, MAX = 3s PP PPH PP PPH to AC Characteristics • Made miscellaneous text edits Rev. C – 02/2010 • Corrected typographical error “iA” to “uA” for V in DC Characteristics OH • Made the following specification changes in AC Characteristics: tW: changed MAX from 15s to 8ms; tWNVCR: changed TYP from 1 to 0.2 and MAX from 15 to 3; tPP: changed TYP from int(n/8) x 0.025 to int(n/8) x 0.015; tSSE: changed TYP from 150ms to 0.2s and MAX from 500ms to 2s; tSE: changed TYP from 1s to 0.7s; tBE: changed TYP from 256s to 170s and MAX from 770s to 250s Rev. B – 05/2009 • Added the TBGA ballout and package information • Updated PROGRAM/ERASE/SUSPEND operations; Device Protection; Read and Write Volatile Configuration Register; Fast POR; Power-Up Timing graphics; Order Informa- tion Rev. A – 01/2009 • Initial release 09005aef845665fe 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.

128Mb, 3V, Multiple I/O Serial Flash Memory Revision History 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization some- times occur. 09005aef845665fe 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. n25q_128mb_3v_65nm.pdf - Rev. T 02/18 EN © 2012 Micron Technology, Inc. All rights reserved.