Freescale Semiconductor DocumentNumber:MW7IC915N Technical Data Rev.2,12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC915NT1 The MW7IC915N wideband integrated circuit is designed with on--chip matching that makes it usable from 698 to 960 MHz. This multi--stage structureisratedfor26to32voltoperationandcoversalltypicalcellularbase stationmodulationformats. DriverApplication—900MHz  TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, 728--960MHz,1.6WAVG.,28V I =52mA,I =134mA,P =1.6WattsAvg.,IQMagnitude SINGLEW--CDMA DQ1 DQ2 out Clipping,ChannelBandwidth=3.84MHz,InputSignalPAR=7.5dB RFLDMOSWIDEBAND @0.01%ProbabilityonCCDF. INTEGRATEDPOWERAMPLIFIER Gps PAE ACPR Frequency (dB) (%) (dBc) 865MHz 37.9 17.1 --50.4 880MHz 38.0 17.4 --50.6 895MHz 37.8 17.5 --51.3  CapableofHandling10:1VSWR,@32Vdc,880MHz,Pout=23.5WattsCW (3dBInputOverdrivefromRatedPout) PQFN88 PLASTIC  Stableintoa5:1VSWR.AllSpursBelow--60dBc@30to41.5dBmCW P . out  TypicalPout@1dBCompressionPoint≃15.5WattsCW DriverApplication—700MHz  TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, I =50mA,I =144mA,P =1.6WattsAvg.,IQMagnitude DQ1 DQ2 out Clipping,ChannelBandwidth=3.84MHz,InputSignalPAR=7.5dB @0.01%ProbabilityonCCDF. Gps PAE ACPR Frequency (dB) (%) (dBc) 728MHz 37.8 17.2 --49.5 748MHz 37.8 17.3 --50.5 768MHz 37.7 17.3 --51.4 Features  CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParameters andCommonSourceS--Parameters  On--ChipMatching(50OhmInput,DCBlocked)  IntegratedQuiescentCurrentTemperatureCompensationwith Enable/DisableFunction(1)  IntegratedESDProtection  InTapeandReel.T1Suffix=1,000Units,16mmTapeWidth,13--inchReel. 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.Gotohttp://www.freescale.com/rf.SelectDocumentation/ApplicationNotes--AN1977orAN1987. FreescaleSemiconductor,Inc.,2009,2013.Allrightsreserved. MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 1

VGS1 VGS2 1 2 GS C GSC C C V N V N N N QuiescentCurrent 24 23 22 21 20 19 TemperatureCompensation(1) NC 1 18 RFout/VDS2 GND 2 17 RFout/VDS2 RFin 3 16 RFout/VDS2 RFin 4 15 RFout/VDS2 RFin RFout/VDS2 GND 5 14 RFout/VDS2 NC 6 7 8 9 10 11 12 13 RFout/VDS2 NC DS1 DS1NC NC NC VDS1 V V Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.Gotohttp://www.freescale.com/rf.SelectDocumentation/ApplicationNotes--AN1977orAN1987. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage VDSS --0.5,+65 Vdc Gate--SourceVoltage VGS --6.0,+10 Vdc OperatingVoltage VDD 32,+0 Vdc StorageTemperatureRange Tstg --65to+150 C OperatingJunctionTemperature(1) TJ 150 C InputPower Pin 17 dBm Table2.ThermalCharacteristics Characteristic Symbol Value(1,2) Unit ThermalResistance,JunctiontoCase RJC C/W W--CDMAApplication Stage1,28Vdc,IDQ1=60mA 7.5 (CaseTemperature82C,Pout=1.6WCW) Stage2,28Vdc,IDQ2=130mA 3.2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C 1. MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. 2. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. MW7IC915NT1 RFDeviceData 2 FreescaleSemiconductor,Inc.

Table5.ElectricalCharacteristics (TA=25Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit Stage1—OffCharacteristics ZeroGateVoltageDrainLeakageCurrent IDSS — — 10 Adc (VDS=65Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS — — 1 Adc (VDS=28Vdc,VGS=0Vdc) Gate--SourceLeakageCurrent IGSS — — 1 Adc (VGS=1.5Vdc,VDS=0Vdc) Stage1—OnCharacteristics GateThresholdVoltage VGS(th) 1 2 3 Vdc (VDS=10Vdc,ID=9Adc) GateQuiescentVoltage VGS(Q) — 3 — Vdc (VDS=28Vdc,ID=52mAdc) FixtureGateQuiescentVoltage VGG(Q) 5.5 6.3 7 Vdc (VDD=28Vdc,ID=52mAdc,MeasuredinFunctionalTest) Stage2—OffCharacteristics ZeroGateVoltageDrainLeakageCurrent IDSS — — 10 Adc (VDS=65Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS — — 1 Adc (VDS=28Vdc,VGS=0Vdc) Gate--SourceLeakageCurrent IGSS — — 1 Adc (VGS=1.5Vdc,VDS=0Vdc) Stage2—OnCharacteristics GateThresholdVoltage VGS(th) 1 2 3 Vdc (VDS=10Vdc,ID=36Adc) GateQuiescentVoltage VGS(Q) — 2.9 — Vdc (VDS=28Vdc,ID=134mAdc) FixtureGateQuiescentVoltage VGG(Q) 3.8 4.6 5.3 Vdc (VDD=28Vdc,ID=134mAdc,MeasuredinFunctionalTest) Drain--SourceOn--Voltage VDS(on) 0.1 0.3 0.8 Vdc (VGS=10Vdc,ID=3.6Adc) FunctionalTests(1)(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=52mA,IDQ2=134mA,Pout=1.6WAvg., f=880MHz,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.ACPRmeasured in3.84MHzChannelBandwidth@5MHzOffset. PowerGain Gps 35.0 38.0 41.0 dB PowerAddedEfficiency PAE 15.0 17.4 — % AdjacentChannelPowerRatio ACPR — --50.6 --47.0 dBc InputReturnLoss IRL — --22 --9 dB TypicalPerformanceoverFrequency(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=52mA,IDQ2=134mA,Pout=1.6W Avg.,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.ACPRmeasuredin 3.84MHzChannelBandwidth@5MHzOffset. Gps PAE ACPR IRL Frequency (dB) (%) (dBc) (dB) 865MHz 37.9 17.1 --50.4 --21 880MHz 38.0 17.4 --50.6 --22 895MHz 37.8 17.5 --51.3 --22 1. Partinternallyinputmatched. (continued) MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 3

Table5.ElectricalCharacteristics(TA=25Cunlessotherwisenoted)(continued) Characteristic Symbol Min Typ Max Unit TypicalPerformances(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=52mA,IDQ2=134mA,865--895MHzBandwidth Pout@1dBCompressionPoint,CW P1dB — 15.5 — W (VDD=28Vdc,IDQ1=75mA,IDQ2=100mA) IMDSymmetry@16WPEP,PoutwhereIMDThirdOrder IMDsym MHz Intermodulation30dBc — 45 — (DeltaIMDThirdOrderIntermodulationbetweenUpperandLower Sidebands>2dB) VBWResonancePoint VBWres — 180 — MHz (IMDThirdOrderIntermodulationInflectionPoint) QuiescentCurrentAccuracyoverTemperature(1) Stage1 IQT — 0.10 — % with2kGateFeedResistors(--30to85C) Stage2 — 0.12 — GainFlatnessin30MHzBandwidth@Pout=1.6WAvg. GF — 0.1 — dB GainVariationoverTemperature G — 0.041 — dB/C (--30Cto+85C) OutputPowerVariationoverTemperature P1dB — 0.004 — dBm/C (--30Cto+85C) TypicalPerformance—700MHz(InFreescale700MHzTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=50mA,IDQ2=144mA,Pout= 1.6WAvg.,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.ACPRmeasuredin 3.84MHzChannelBandwidth@5MHzOffset. Gps PAE ACPR IRL Frequency (dB) (%) (dBc) (dB) 728MHz 37.8 17.2 --49.5 --23 748MHz 37.8 17.3 --50.5 --22 768MHz 37.7 17.3 --51.4 --22 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.Gotohttp://www.freescale.com/rf.SelectDocumentation/ApplicationNotes -- AN1977or AN1987. MW7IC915NT1 RFDeviceData 4 FreescaleSemiconductor,Inc.

VG1 VG2 C8 C10 C12 C19 R1 R2 C13 C15 C17 VD2 C7 C9 C11 C1 C2 C3 C4 C5 C6 C14 MW7IC915N Rev3 C16 C18 VD1 C20 Figure3.MW7IC915NT1TestCircuitComponentLayout Table6.MW7IC915NT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1 1.8pFChipCapacitor ATC100B1R8BT500XT ATC C2,C5 0.8pFChipCapacitors ATC100B0R8BT500XT ATC C3 6.2pFChipCapacitor ATC100B6R2BT500XT ATC C4 3.3pFChipCapacitor ATC100B3R3CT500XT ATC C6,C11,C12,C13,C14 47pFChipCapacitors ATC100B470JT500XT ATC C7,C8 1FChipCapacitors GRM31MR71H105KA88L Murata C9,C10 0.1FChipCapacitors GRM32MR71H104JA01L Murata C15,C16 4.7FChipCapacitors GRM31CR71H475KA12L Murata C17,C18 10F,50VChipCapacitors GRM55DR61H106KA88L Murata C19,C20 100F,50VElectrolyticCapacitors MCGPR50V107M8X11--RH Multicomp R1,R2 2k,1/4WResistors CRCW12062K00FKEA Vishay PCB 0.020,r=3.66 RO4350B Rogers MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 5

TYPICALCHARACTERISTICS 40 19 D PAE DE%) 39 18 D( AY Gps ERNC 38 17 WE B) OCI GAIN(d 37 VIDDQD2==21834VdmcA,,PSouintg=le1--.6CaWrri(eArvWg.-)-,CIDDQM1A=,532.8m4AMHz 16 PAE,PEFFI B) R 36 ChannelBandwidth,InputSignalPAR=7.5dB@ --46 (d E S G,POWps 333354 0.01%ProbabilityonCCDF IRL PARC ------444789 ACPR(dBc) ------312000 TRETURNLOS 00--0.5.5 ARC(dB) U P ACPR P N 32 --50 --40 I --1 L, 800 820 840 860 880 900 920 940 960 980 1000 R I f,FREQUENCY(MHz) Figure4.OutputPeak--to--AverageRatioCompression(PARC) BroadbandPerformance@P =1.6WattsAvg. out --5 Bc) --10 VDD=28Vdc,Pout=16W(PEP),IDQ1=52mA N(d --15 IDQ2=134mA,Two--ToneMeasurements O (f1+f2)/2=CenterFrequencyof880MHz TI --20 R TO --25 IM3--U DIS --30 IM3--L N --35 O IM5--U TI --40 A UL --45 IM5--L OD --50 IM7--U M ER --55 IM7--L NT --60 I D, --65 M I --70 1 10 100 200 TWO--TONESPACING(MHz) Figure5.IntermodulationDistortionProducts versusTwo--ToneSpacing 40 1 60 --20 VDD=28Vdc,IDQ1=52mA,IDQ2=134mA,f=880MHz Single--CarrierW--CDMA,3.84MHzChannelBandwidth %) 39.5 % 0 50 ( --25 OWERGAIN(dB) 383.59 MPRESSIONAT0.01LITYONCCDF(dB) ----12 PAGRCpsPAE --1dB=3.8W --3d--B2=dB6.=95W.2W 4300 ADDEDEFFICIENCY ----3305 ACPR(dBc) G,Pps 38 UTCOOBABI --3 20 OWER --40 PR P 37.5 UTP --4 ACPR InputSignalPAR=7.5dB@0.01% 10 E, --45 O ProbabilityonCCDF PA 37 --5 0 --50 2 4 6 8 10 Pout,OUTPUTPOWER(WATTS) Figure6.OutputPeak--to--AverageRatio Compression(PARC)versusOutputPower MW7IC915NT1 RFDeviceData 6 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS 41 90 --15 VDD=28Vdc,IDQ1=52mA,IDQ2=134mA,Single--Carrier 40 W--CDMA,3.84MHzChannelBandwidth,InputSignal 80 %) --20 PAR=7.5dB@0.01%ProbabilityonCCDF ( Y 39 70 C --25 (dB) 895MHz CIEN GAIN 38 Gps 895MHz 880MHz 865MHz 60 EFFI --30 Bc) R 37 50 D --35 d E E ( W D R G,POps 3365 895MH8z80MHz 865MHz 880MHz 4300 OWERAD ----4405 ACP ACPR P 34 20 AE, --50 PAE P 33 10 --55 1 10 20 Pout,OUTPUTPOWER(WATTS)AVG. Figure7.Single--CarrierW--CDMAPowerGain,PowerAdded EfficiencyandACPRversusOutputPower 40 0 Gain 30 --5 20 --10 AIN(dB) 10 --15 RL(dB) G I 0 VDD=28Vdc --20 Pin=--30dBm IRL --10 IDQ1=52mA --25 IDQ2=134mA --20 --30 300 600 900 1200 f,FREQUENCY(MHz) Figure8.BroadbandFrequencyResponse W--CDMATESTSIGNAL 100 10 0 10 --10 3.84MHz %) 1 --20 ChannelBW ( Y InputSignal --30 T BILI 0.1 --40 BA B) O d R 0.01 ( --50 P W--CDMA.ACPRMeasuredin3.84MHz --60 --ACPRin3.84MHz +ACPRin3.84MHz 0.001 ChannelBandwidth@5MHzOffset. IntegratedBW IntegratedBW InputSignalPAR=7.5dB@0.01% --70 ProbabilityonCCDF 0.0001 --80 0 1 2 3 4 5 6 7 8 9 10 --90 PEAK--TO--AVERAGE(dB) --100 Figure9.CCDFW--CDMAIQMagnitude --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 Clipping,Single--CarrierTestSignal f,FREQUENCY(MHz) Figure10.Single--CarrierW--CDMASpectrum MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 7

VDD=28Vdc,IDQ1=52mA,IDQ2=134mA,Pout=1.6WAvg. f Zin Zload MHz   820 52.99--j29.47 7.72+j13.96 840 49.35--j27.56 7.34+j14.74 860 46.67--j23.60 7.43+j15.55 880 44.88--j17.63 7.94+j16.07 900 43.73--j10.46 7.98+j16.74 920 43.12--j2.75 7.80+j17.62 940 43.38+j5.01 8.28+j18.33 960 44.07+j12.97 9.07+j19.04 980 43.89+j12.61 9.14+j20.02 Zin = Deviceinputimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasuredfrom draintoground. Device Output UnderTest Matching Network Z Z in load Figure11.SeriesEquivalentInputandLoadImpedance MW7IC915NT1 RFDeviceData 8 FreescaleSemiconductor,Inc.

ALTERNATIVEPEAKTUNELOADPULLCHARACTERISTICS VDD=28Vdc,IDQ1=52mA,IDQ2=134mA,PulsedCW, 10sec(on),10%DutyCycle 48 47 f=865MHz Ideal 46 m) 45 f=895MHz B (d 44 Actual R E W 43 O P 42 f=895MHz T PU 41 f=865MHz OUT 40 f=880MHz f=880MHz P,out 3398 37 36 0 2 4 6 8 10 12 Pin,INPUTPOWER(dBm) NOTE:LoadPullTestFixtureTunedforPeakP1dBOutputPower@28V P1dB P3dB f (MHz) Watts dBm Watts dBm 865 18.1 42.6 22.4 43.5 880 18.5 42.7 22.3 43.5 895 18.5 42.7 22.2 43.5 TestImpedancesperCompressionLevel f Zsource Zload (MHz)   865 P1dB 48.7+j15.6 6.8+j6.5 880 P1dB 52.3+j20.8 6.9+j6.7 895 P1dB 55.1+j22.2 7.4+j6.7 Figure12.PulsedCWOutputPower versusInputPower@28V MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 9

VG1 VG2 C9 C16 R1 R2 C14 C12 VD2 C8 C10 C1 C2 C3 C4 C5 C6 C7 C11 MW7IC915N C13 VD1 Rev3 C15 C17 Figure13.MW7IC915NT1TestCircuitComponentLayout—700MHz Table7.MW7IC915NT1TestCircuitComponentDesignationsandValues—700MHz Part Description PartNumber Manufacturer C1,C3,C6 2.7pFChipCapacitors ATC100B2R7BT500XT ATC C2 0.3pFChipCapacitor ATC100B0R3BT500XT ATC C4 4.7pFChipCapacitor ATC100B4R7CT500XT ATC C5 5.6pFChipCapacitor ATC100B5R6CT500XT ATC C7,C8,C9,C10,C11 47pFChipCapacitors ATC100B470JT500XT ATC C12,C13 4.7FChipCapacitors GRM31CR71H475KA12L Murata C14,C15 10F,50VChipCapacitors GRM55DR61H106KA88L Murata C16,C17 100F,50VElectrolyticCapacitors MCGPR50V107M8X11--RH Multicomp R1,R2 2k,1/4WResistors CRCW12062K00FKEA Vishay PCB 0.020,r=3.66 RO4350B Rogers MW7IC915NT1 RFDeviceData 10 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS—700MHz 38.8 17.5 D 38.6 PAE 17 ADDEY(%) RC EN B) 38.4 16.5 OWCIE ERGAIN(d 38.2 VPICDDohQuDa2tn===ne121l.846B4VWadmncd(AAw,viSdgit.nh),g,IlIDenQ-p-C1uta=Srr5iige0nrmaWlA-P-CADRM=A7,.53.d8B4M@Hz Gps 16 PAE,PEFFI S(dB) W 38 --49 S G,POps 3377..86 0.01%PIrRobLabilityonCCDF PARC ----5501 ACPR(dBc) ------312000 TRETURNLO 00--0.5.5 ARC(dB) U P ACPR NP 37.4 --52 --40 I --1 L, 710 720 730 740 750 760 770 780 790 R I f,FREQUENCY(MHz) Figure14.OutputPeak--to--AverageRatioCompression(PARC) BroadbandPerformance@P =1.6WattsAvg. out 41 90 --15 VDD=28Vdc,IDQ1=50mA,IDQ2=144mA,Single--Carrier 40 W--CDMA,3.84MHzChannelBandwidth,InputSignal 80 %) --20 PAR=7.5dB@0.01%ProbabilityonCCDF ( Y 39 70 C --25 (dB) CIEN GAIN 38 Gps 728MHz 728MHz 60 EFFI --30 Bc) WER 37 768MHz 748MHz 748MHz 50 DED --35 R(d G,POps 3365 76874M8HMzHz PAE 768MHz 4300 OWERAD ----4405 ACP ACPR P 34 20 AE, --50 P 33 10 --55 1 10 20 Pout,OUTPUTPOWER(WATTS)AVG. Figure15.Single--CarrierW--CDMAPowerGain,PowerAdded EfficiencyandACPRversusOutputPower 40 0 Gain 30 --10 AIN(dB) 20 --20 RL(dB) G 10 --30 I VDD=28Vdc IRL 0 Pin=--30dBm --40 IDQ1=50mA IDQ2=144mA --10 --50 300 600 900 1200 f,FREQUENCY(MHz) Figure16.BroadbandFrequencyResponse MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 11

VDD=28Vdc,IDQ1=50mA,IDQ2=144mA,Pout=1.6WAvg. f Zin Zload MHz   710 54.61--j2.01 9.57+j6.52 720 55.46+j0.26 9.95+j7.04 730 56.75+j2.12 10.70+j7.79 740 58.35+j3.55 11.39+j8.18 750 60.11+j4.65 11.41+j8.07 760 61.83+j5.22 11.00+j7.90 770 63.19+j5.31 10.88+j7.88 780 64.01+j4.90 11.41+j7.87 790 64.18+j3.91 12.32+j7.61 Zin = Deviceinputimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasuredfrom draintoground. Device Output UnderTest Matching Network Z Z in load Figure17.SeriesEquivalentInputandLoadImpedance—700MHz MW7IC915NT1 RFDeviceData 12 FreescaleSemiconductor,Inc.

PACKAGEDIMENSIONS MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 13

MW7IC915NT1 RFDeviceData 14 FreescaleSemiconductor,Inc.

MW7IC915NT1 RFDeviceData FreescaleSemiconductor,Inc. 15

PRODUCTDOCUMENTATION,TOOLSANDSOFTWARE Refertothefollowingdocumentstoaidyourdesignprocess. ApplicationNotes  AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers  AN1977:QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamily  AN1987:QuiescentCurrentControlfortheRFIntegratedCircuitDeviceFamily EngineeringBulletins  EB212:UsingDataSheetImpedancesforRFLDMOSDevices Software  ElectromigrationMTTFCalculator  RFHighPowerModel  .s2pFile ForSoftwareandTools,doaPartNumbersearchathttp://www.freescale.com,andselectthe“PartNumber”link.Gotothe Software&Toolstabonthepart’sProductSummarypagetodownloadtherespectivetool. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 Sept.2009  InitialReleaseofDataSheet 1 Dec.2009  Table4,MoistureSensitivityLevel,correctedPackagePeakTemperatureto260C,p.2 2 Dec.2013  Table1,MaximumRatings:increasedinputpowerfrom4.7dBmto17dBmtoreflectthetruecapabilityof thedevice,p.2  Table3,ESDProtectionCharacteristics,removedtheword“Minimum”aftertheESDclassrating.ESD ratingsarecharacterizedduringnewproductdevelopmentbutarenot100%testedduringproduction.ESD ratingsprovidedinthedatasheetareintendedtobeusedasaguidelinewhenhandlingESDsensitive devices,p.2  Table6,TestCircuitComponentDesignationsandValues:correctedC9,C10chipcapacitordescription from0.01to0.1pF,p.5.Table6(900MHzcomponentdesignations)andTable7(700MHzcomponent designations):addedPCBmaterialinformation,pp.5,10  ReplacedCaseOutline98ASA10760D,Rev.OwithRev.A,pp.13--15.Mechanicaloutlinedrawing modifiedtoreflectthecorrectleadendfeatures.Formatofthemechanicaloutlinewasalsoupdatedtothe currentFreescaleformatforFreescalemechanicaloutlines. MW7IC915NT1 RFDeviceData 16 FreescaleSemiconductor,Inc.

HowtoReachUs: Informationinthisdocumentisprovidedsolelytoenablesystemandsoftware implementerstouseFreescaleproducts.Therearenoexpressorimpliedcopyright HomePage: licensesgrantedhereundertodesignorfabricateanyintegratedcircuitsbasedonthe freescale.com informationinthisdocument. WebSupport: Freescalereservestherighttomakechangeswithoutfurthernoticetoanyproducts freescale.com/support herein.Freescalemakesnowarranty,representation,orguaranteeregardingthe suitabilityofitsproductsforanyparticularpurpose,nordoesFreescaleassumeany liabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecifically disclaimsanyandallliability,includingwithoutlimitationconsequentialorincidental damages.“Typical”parametersthatmaybeprovidedinFreescaledatasheetsand/or specificationscananddovaryindifferentapplications,andactualperformancemay varyovertime.Alloperatingparameters,including“typicals,”mustbevalidatedfor eachcustomerapplicationbycustomer’stechnicalexperts.Freescaledoesnotconvey anylicenseunderitspatentrightsnortherightsofothers.Freescalesellsproducts pursuanttostandardtermsandconditionsofsale,whichcanbefoundatthefollowing address:freescale.com/SalesTermsandConditions. FreescaleandtheFreescalelogoaretrademarksofFreescaleSemiconductor,Inc., Reg.U.S.Pat.&Tm.Off.Allotherproductorservicenamesarethepropertyoftheir respectiveowners. E2009,2013FreescaleSemiconductor,Inc. MW7IC915NT1 DRoFcuDmeenvticNeumDbaert:aMW7IC915N RFerve.e2,s1c2a/2le013Semiconductor,Inc. 17

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