Freescale Semiconductor DocumentNumber:MW7IC2750N Technical Data Rev.4,10/2011 RF LDMOS Wideband Integrated MW7IC2750NR1 Power Amplifiers MW7IC2750GNR1 TheMW7IC2750Nwidebandintegratedcircuitisdesignedwithon--chip MW7IC2750NBR1 matchingthatmakesitusablefrom2300--2700MHz.Thismulti--stage structureisratedfor26to32Voltoperationandcoversalltypicalcellular basestationmodulationformats. • TypicalWiMAXPerformance:VDD=28Volts,IDQ1=160mA,IDQ2=550mA, P =8WattsAvg.,f=2700MHz,OFDM802.16d,64QAM3/ ,4Bursts, out 4 2500--2700MHz,8WAVG.,28V 10MHzChannelBandwidth,InputSignalPAR=9.5dB@0.01%Probability WiMAX onCCDF. RFLDMOSWIDEBAND PowerGain(cid:151)26dB PowerAddedEfficiency(cid:151)17% INTEGRATEDPOWERAMPLIFIERS DeviceOutputSignalPAR(cid:151)8.6dB@0.01%ProbabilityonCCDF ACPR@8.5MHzOffset(cid:151)--49dBcin1MHzChannelBandwidth • CapableofHandling10:1VSWR,@32Vdc,2600MHz,80WattsCWOutput CASE1618--02 Power(3dBInputOverdrivefromRatedP ) out TO--270WB--14 • Stableintoa3:1VSWR.AllSpursBelow--60dBc@1mWto80WCWPout PLASTIC • TypicalPout@1dBCompressionPoint≃50WattsCW MW7IC2750NR1 DriverApplications • TypicalWiMAXPerformance:VDD=28Volts,IDQ1=160mA,IDQ2=550mA, P =4WattsAvg.,f=2700MHz,OFDM802.16d,64QAM3/ ,4Bursts, out 4 10MHzChannelBandwidth,InputSignalPAR=9.5dB@0.01%Probability CASE1621--02 onCCDF. TO--270WB--14GULL PowerGain(cid:151)26dB PLASTIC PowerAddedEfficiency(cid:151)11% MW7IC2750GNR1 DeviceOutputSignalPAR(cid:151)9.2dB@0.01%ProbabilityonCCDF ACPR@8.5MHzOffset(cid:151)--57dBcin1MHzChannelBandwidth Features • 100%PARTestedforGuaranteedOutputPowerCapability CASE1617--02 • CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParameters TO--272WB--14 andCommonSourceS--Parameters PLASTIC • On--ChipMatching(50OhmInput,DCBlocked) MW7IC2750NBR1 • IntegratedQuiescentCurrentTemperatureCompensationwith Enable/DisableFunction(1) • IntegratedESDProtection • GreaterNegativeGate--SourceVoltageRangeforImprovedClassCOperation • 225°CCapablePlasticPackage • InTapeandReel.R1Suffix=500Units,44mmTapeWidth,13inchReel. VDS1 1 VGS2 2 VGNSC1 34 14 RFout/VDS2 NC 5 VDS1 RFin 6 RFin 7 NC 8 RFin RFout/VDS2 NC 9 13 RFout/VDS2 VGS1 10 VGS2 11 VGS1 QuiescentCurrent VDS1 12 VGS2 TemperatureCompensation(1) (TopView) Note: Exposedbacksideofthepackageis thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.Gotohttp://www.freescale.com/rf.SelectDocumentation/ApplicationNotes--AN1977orAN1987. ©FreescaleSemiconductor,Inc.,2008,2010--2011.Allrightsreserved. MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 1

Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage VDS --0.5,+65 Vdc Gate--SourceVoltage VGS --6.0,+10 Vdc OperatingVoltage VDD 32,+0 Vdc StorageTemperatureRange Tstg --65to+150 °C CaseOperatingTemperature TC 150 °C OperatingJunctionTemperature(1,2) TJ 225 °C InputPower Pin 30 dBm Table2.ThermalCharacteristics Characteristic Symbol Value(2,3) Unit ThermalResistance,JunctiontoCase RθJC °C/W CWApplication Stage1,28Vdc,IDQ1=160mA 3.0 (CaseTemperature80°C,Pout=50WCW) Stage2,28Vdc,IDQ2=550mA 0.7 FinalApplication Stage1,28Vdc,IDQ1=160mA 2.9 (CaseTemperature70°C,Pout=8WCW) Stage2,28Vdc,IDQ2=550mA 0.7 DriverApplication Stage1,28Vdc,IDQ1=160mA 2.8 (CaseTemperature65°C,Pout=4WCW) Stage2,28Vdc,IDQ2=550mA 0.7 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 °C Table5.ElectricalCharacteristics (TA=25°Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit Stage1(cid:151)OffCharacteristics ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 10 μAdc (VDS=65Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 1 μAdc (VDS=28Vdc,VGS=0Vdc) Gate--SourceLeakageCurrent IGSS (cid:151) (cid:151) 1 μAdc (VGS=5Vdc,VDS=0Vdc) Stage1(cid:151)OnCharacteristics GateThresholdVoltage VGS(th) 1 2 3 Vdc (VDS=10Vdc,ID=46μAdc) GateQuiescentVoltage VGS(Q) 3 3.8 4.5 Vdc (VDD=28Vdc,IDQ1=160mA,MeasuredinFunctionalTest) Stage1(cid:151)DynamicCharacteristics(4) InputCapacitance Ciss (cid:151) 550 (cid:151) pF (VDS=28Vdc,VGS=0Vdc±30mV(rms)ac@1MHz) 1. ContinuoususeatmaximumtemperaturewillaffectMTTF. 2. MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. 3. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. 4. Partinternallymatchedbothoninputandoutput. (continued) MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 2 FreescaleSemiconductor,Inc.

Table5.ElectricalCharacteristics (TA=25°Cunlessotherwisenoted)(continued) Characteristic Symbol Min Typ Max Unit Stage2(cid:151)OffCharacteristics ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 10 μAdc (VDS=65Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 1 μAdc (VDS=28Vdc,VGS=0Vdc) Gate--SourceLeakageCurrent IGSS (cid:151) (cid:151) 1 μAdc (VGS=5Vdc,VDS=0Vdc) Stage2(cid:151)OnCharacteristics GateThresholdVoltage VGS(th) 1 2 3 Vdc (VDS=10Vdc,ID=185μAdc) GateQuiescentVoltage VGS(Q) 2.8 3.6 4.3 Vdc (VDD=28Vdc,IDQ2=550mA,MeasuredinFunctionalTest) Drain--SourceOn--Voltage VDS(on) 0.1 0.12 0.8 Vdc (VGS=10Vdc,ID=1Adc) Stage2(cid:151)DynamicCharacteristics(1) ReverseTransferCapacitance Crss (cid:151) 0.68 (cid:151) pF (VDS=28Vdc±30mV(rms)ac@1MHz,VGS=0Vdc) OutputCapacitance Coss (cid:151) 220 (cid:151) pF (VDS=28Vdc±30mV(rms)ac@1MHz,VGS=0Vdc) FunctionalTests(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=160mA,IDQ2=550mA,Pout=8WAvg.,f=2700MHz, WiMAX,OFDM802.16d,64QAM3/4,4Bursts,10MHzChannelBandwidth,InputSignalPAR=9.5dB@0.01%ProbabilityonCCDF.ACPR measuredin1MHzChannelBandwidth@±8.5MHzOffset. PowerGain Gps 24 26 31 dB PowerAddedEfficiency PAE 15 17 (cid:151) % OutputPeak--to--AverageRatio@0.01%ProbabilityonCCDF PAR 7.8 8.6 (cid:151) dB AdjacentChannelPowerRatio ACPR (cid:151) --49 --45 dBc InputReturnLoss IRL (cid:151) --12 --10 dB TypicalPerformancesOFDMSignal(cid:151)10MHzChannelBandwidth(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1= 160mA,IDQ2=550mA,Pout=8WAvg.,f=2700MHz,WiMAX,OFDM802.16d,64QAM3/4,4Bursts,10MHzChannelBandwidth,Input SignalPAR=9.5dB@0.01%ProbabilityonCCDF. RelativeConstellationError(2) RCE (cid:151) --33 (cid:151) dB ErrorVectorMagnitude(2) EVM (cid:151) 2.3 (cid:151) %rms TypicalPerformancesOFDMSignal(cid:151)7MHzChannelBandwidth(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1= 160mA,IDQ2=550mA,Pout=8WAvg.,f=2700MHz,WiMAX,OFDM802.16d,64QAM3/4,4Bursts,7MHzChannelBandwidth,Input SignalPAR=9.5dB@0.01%ProbabilityonCCDF. MaskSystemTypeG Mask dBc PointBat3.5MHzOffset (cid:151) --27 (cid:151) PointCat5MHzOffset (cid:151) --40 (cid:151) PointDat7.4MHzOffset (cid:151) --43 (cid:151) PointEat14MHzOffset (cid:151) --58 (cid:151) PointFat17.5MHzOffset (cid:151) --63 (cid:151) RelativeConstellationError(2) RCE (cid:151) --33 (cid:151) dB ErrorVectorMagnitude(2) EVM (cid:151) 2.3 (cid:151) %rms 1. Partinternallymatchedbothoninputandoutput. 2. RCE=20Log(EVM/100) (continued) MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 3

Table5.ElectricalCharacteristics(TA=25°Cunlessotherwisenoted)(continued) Characteristic Symbol Min Typ Max Unit TypicalPerformances(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=160mA,IDQ2=550mA,2700MHzBandwidth Pout@1dBCompressionPoint,CW P1dB (cid:151) 55 (cid:151) W IMDSymmetry@50WPEP,PoutwhereIMDThirdOrder IMDsym MHz Intermodulation30dBc (cid:151) 60 (cid:151) (DeltaIMDThirdOrderIntermodulationbetweenUpperandLower Sidebands>2dB) VBWResonancePoint VBWres (cid:151) 50 (cid:151) MHz (IMDThirdOrderIntermodulationInflectionPoint) GainFlatnessin200MHzBandwidth@Pout=8WAvg. GF (cid:151) 0.5 (cid:151) dB AverageDeviationfromLinearPhasein200MHzBandwidth Φ (cid:151) 1.1 (cid:151) ° @Pout=50WCW AverageGroupDelay@Pout=50WCW,f=2600MHz Delay (cid:151) 2.3 (cid:151) ns Part--to--PartInsertionPhaseVariation@Pout=50WCW, ∆Φ (cid:151) 38.7 (cid:151) ° f=2600MHz,SixSigmaWindow GainVariationoverTemperature ∆G (cid:151) 0.037 (cid:151) dB/°C (--30°Cto+85°C) OutputPowerVariationoverTemperature ∆P1dB (cid:151) 0.005 (cid:151) dB/°C (--30°Cto+85°C) TypicalDriverPerformances(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=160mA,IDQ2=550mA,Pout=4WAvg., f=2700MHz,WiMAX,OFDM802.16d,64QAM3/4,4Bursts,10MHzChannelBandwidth,InputSignalPAR=9.5dB@0.01%Probability onCCDF.ACPRmeasuredin1MHzChannelBandwidth@±8.5MHzOffset. PowerGain Gps (cid:151) 26 (cid:151) dB PowerAddedEfficiency PAE (cid:151) 11 (cid:151) % OutputPeak--to--AverageRatio@0.01%ProbabilityonCCDF PAR (cid:151) 9.2 (cid:151) dB AdjacentChannelPowerRatio ACPR (cid:151) --57 (cid:151) dBc InputReturnLoss IRL (cid:151) --13 (cid:151) dB RelativeConstellationError@Pout=2.5WAvg.(1) RCE (cid:151) --39 (cid:151) dB 1. RCE=20Log(EVM/100) MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 4 FreescaleSemiconductor,Inc.

VDD2 VDD1 Z5 1 DUT C8 C13 2 C2 C4 C6 Z12 3 NC 4 RF 14 RF NC 5 C10 C12 INPUT OUTPUT Z1 Z2 Z3 6 Z6 Z7 Z8 Z9 Z10 7 C15 C1 NC 8 13 C11 NC 9 R1 VGG1 10 QuiescentCurrent Z11 R2 Temperature VGG2 11 Compensation Z4 12 C9 C14 C3 C5 C7 Z1 0.662″x0.064″Microstrip Z8 0.417″x0.064″Microstrip Z2 1.530″x0.064″Microstrip Z9 1.137″x0.064″Microstrip Z3 0.126″x0.060″Microstrip Z10 0.293″x0.064″Microstrip Z4,Z5 0.771″x0.046″Microstrip Z11,Z12 0.615″x0.095″Microstrip Z6 0.192″x0.860″Microstrip PCB RogersRO4350B,0.030″,εr=3.5 Z7 0.280″x0.719″Microstrip Figure3.MW7IC2750NR1(GNR1)(NBR1)TestCircuitSchematic Table6.MW7IC2750NR1(GNR1)(NBR1)TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1 0.8pFChipCapacitor ATC100B0R8BT500XT ATC C2,C3,C13,C14 10μF,50VChipCapacitors GRM55DR61H106KA88B Murata C4,C5,C8,C9,C15 5.1pFChipCapacitors ATC100B5R1CT500XT ATC C6,C7 1μF,100VChipCapacitors GRM32ER72A105KA01L Murata C10,C11 0.2pFChipCapacitors ATC100B0R2BT500XT ATC C12 0.5pFChipCapacitor ATC100B0R5BT500XT ATC R1,R2 1kΩ,1/4WChipResistors CRCW12061001FKEA Vishay MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 5

C2 VG2 VD1 C13 C4 C8 VG1 C10 C6 C1 REA C12 C15 A T U O T U MW7IC2750N C Rev.6 C7 C11 C14 VG1 R1 C9 C5 VG2 R2 VD1 C3 Figure4.MW7IC2750NR1(GNR1)(NBR1)TestCircuitComponentLayout MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 6 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS 27 19 D 26.8 PAE Gps 18 DDE(%) AY RC 26.6 17 EN WE RGAIN(dB) 22662..426 VICDDhQDa2n==ne25l85B0VadmncdA,w,PiOdoutFhtD,=IMn8p8Wu0t2(SA.1igv6gnd.a,)l,6PI4DAQQR1A==M913.65/04d,mB4A@Bu0rs.0ts1,%10MHz 11--6550 PAE,POEFFICI --14 dB) --0.6 E ( W ProbabilityonCCDF S O 25.8 --51 --16 OS --0.8 G,Pps2255..64 IRL PARC ----5523 ACPR(dBc) ----1280 RETURNL ----11.2 PARC(dB) 25.2 ACPR --54 --22 T --1.4 U P 25 --55 --24 IN --1.6 2500 2525 2550 2575 2600 2625 2650 2675 2700 RL, I f,FREQUENCY(MHz) Figure5.WiMAXBroadbandPerformance@P =8WattsAvg. out 27 12.5 D 26.8 PAE Gps 11.5 ADDEY(%) RC 26.6 10.5 WEEN RGAIN(dB) 22662..426 VI1@D0DQD0M2.=0H=1z25%85C0VPhadmroncAb,na,PebOloiBulFittaDy=nMod4nw8WCi0d2Ct(hA.D1,v6FIgnd.p,),u6It4DSQQig1An=Ma1l36P/0A4R,m4A=B9u.r5stdsB 98--5..556 PAE,POEFFICI --13 dB) 0 E ( W S G,POps222555...864 IRL PARC ------555789 ACPR(dBc) ------111579 RETURNLOS ------000...246 PARC(dB) 25.2 --60 --21 T --0.8 ACPR U P 25 --61 --23 IN --1 2500 2525 2550 2575 2600 2625 2650 2675 2700 RL, I f,FREQUENCY(MHz) Figure6.WiMAXBroadbandPerformance@P =4WattsAvg. out 29 29 IDQ2=826mA IDQ1=240mA 28 28 688mA 200mA B) 27 B) 27 d d N( 550mA N( 160mA GAI 26 GAI 26 R R E E OW 25 412mA OW 25 120mA P P G,ps24 G,ps24 VDD=28Vdc VDD=28Vdc 23 275mA IDQ1=160mA 23 80mA IDQ2=550mA f=2600MHz f=2600MHz 22 22 0.1 1 10 100 0.1 1 10 100 Pout,OUTPUTPOWER(WATTS)CW Pout,OUTPUTPOWER(WATTS)CW Figure7.PowerGainversusOutputPower Figure8.PowerGainversusOutputPower @I =160mA @I =550mA DQ1 DQ2 MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 7

TYPICALCHARACTERISTICS 0 Bc) VDD=28Vdc,Pout=53W(PEP),IDQ1=160mA N(d --10 IDQ2=550mA,Two--ToneMeasurements O (f1+f2)/2=CenterFrequencyof2600MHz TI R TO --20 S DI IM3--U N O --30 ATI IM3--L L IM5--U U D --40 IM5--L O M R E T --50 N D,I IM7--U IM7--L M I --60 1 10 100 TWO--TONESPACING(MHz) Figure9.IntermodulationDistortionProducts versusToneSpacing 27.5 1 40 --30 27 % 0 35 %) --35 WERGAIN(dB) 262.56 PRESSIONAT0.01TYONCCDF(dB) ----12 ----21ddBB==183.4.018WW Gps --3dB=18A.1C6PWRPAE 3205 DDEDEFICIENCY( ----4405 CPR(dBc) O MLI A A G,Pps252.55 OUTPUTCOPROBABI ----34 I6D4QQ2A=VM5D5D30/=4m,2A48,BVfu=drcs2,t6sID,0Q1001M=MH1Hz6,z0OCmFhDAanMne8l0B2.aP1nA6dRdwCidth 2105 PAE,POWER ----5505 InputSignalPAR=9.5dB@0.01%ProbabilityonCCDF 24.5 --5 10 --60 5 10 15 20 25 30 Pout,OUTPUTPOWER(WATTS) Figure10.OutputPeak--to--AverageRatio Compression(PARC)versusOutputPower 45 --15 VDD=28Vdc,IDQ1=160mA,IDQ2=550mA --40_C %), 40 f4=B2u6rs0t0s,M1H0zM,HOzFDCMha8n0n2e.l1B6adn,d6w4idQthA,MIn3p/u4,t 25_C --20 Y( 35 SignalPAR=9.5dB@0.01%Probability 85_C --25 C CIEN(dB) 30 onCCDF 25_C --30 RADDEDEFFIPOWERGAIN 221505 TC=--402_5C_C 85_C Gps --40_C ------344505 ACPR(dBc) OWEG,ps 10 PAE ACPR --50 P E, 5 --55 A P 0 --60 1 10 70 Pout,OUTPUTPOWER(WATTS)AVG.WiMAX Figure11.WiMAX,ACPR,PowerGainand PowerAddedEfficiencyversusOutputPower MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 8 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS 30 10 S21 20 0 10 --10 B) B) d d ( ( 1 1 2 1 S 0 --20 S S11 --10 --30 VDD=28Vdc IDQ1=160mA,IDQ2=550mA --20 --40 1800 2000 2200 2400 2600 2800 3000 3200 3400 f,FREQUENCY(MHz) Figure12.BroadbandFrequencyResponse WIMAXTESTSIGNAL 100 --10 10MHz --20 10 ChannelBW InputSignal --30 %) 1 ( Y T --40 BILI 0.1 BA B) --50 O d R 0.01 ( P OFDM802.16d,64QAM3/4,4Bursts --60 10MHzChannelBandwidth,InputSignal 0.001 PAR=9.5dB@0.01%Probability --70 onCCDF 0.0001 0 2 4 6 8 10 --80 ACPRin1MHz ACPRin1MHz PEAK--TO--AVERAGE(dB) IntegratedBW IntegratedBW --90 Figure13.OFDM802.16dTestSignal --20 --15 --10 --5 0 5 10 15 20 f,FREQUENCY(MHz) Figure14.WiMAXSpectrumMaskSpecifications MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 9

Zo=50Ω f=2500MHz f=2700MHz Zin f=2700MHz f=2500MHz Zload VDD=28Vdc,IDQ1=160mA,IDQ2=550mA,Pout=8WAvg. f Zin Zload MHz Ω Ω 2500 49.58+j35.82 3.52--j1.79 2525 50.78+j36.71 3.46--j1.82 2550 52.04+j37.58 3.37--j1.86 2575 53.39+j38.45 3.24--j1.88 2600 54.82+j39.30 3.09--j1.87 2625 56.35+j40.14 2.94--j1.84 2650 57.96+j40.95 2.77--j1.77 2675 59.68+j41.74 2.60--j1.66 2700 61.50+j42.49 2.44--j1.56 Zin = Deviceinputimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasuredfrom draintoground. Device Output UnderTest Matching Network Z Z in load Figure15.SeriesEquivalentSourceandLoadImpedance MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 10 FreescaleSemiconductor,Inc.

Table7.CommonSourceS--Parameters(VDD=28V,IDQ1=160mA,IDQ2=550mA,TA=25°C,50OhmSystem) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1500 0.754 78.5 0.001 --17.9 0.000774 17.4 0.994 174.5 1550 0.734 70.1 0.001 --118.8 0.000326 85.4 0.993 175.3 1600 0.716 61.7 0.003 --116.5 0.000392 58.7 0.998 174.6 1650 0.697 53.4 0.009 --135.3 0.000268 27.8 0.997 173.9 1700 0.677 45.1 0.024 --152.3 0.000211 --33.8 0.996 172.9 1750 0.651 36.6 0.064 --179.9 0.000309 148.0 0.991 171.7 1800 0.619 27.6 0.141 146.0 0.000599 148.7 0.981 170.3 1850 0.578 17.7 0.255 113.0 0.000732 142.6 0.970 169.0 1900 0.527 5.6 0.425 84.8 0.000734 149.1 0.957 167.3 1950 0.462 --9.3 0.701 61.4 0.000911 144.7 0.941 165.6 2000 0.392 --27.8 1.237 39.8 0.00154 174.4 0.924 163.6 2050 0.312 --51.0 2.342 15.9 0.00286 159.0 0.895 160.9 2100 0.218 --74.1 4.772 --11.8 0.00377 142.2 0.843 156.6 2150 0.139 --77.4 11.680 --51.5 0.00588 128.7 0.691 149.4 2200 0.426 --69.8 27.658 --129.7 0.00919 73.9 0.342 --169.4 2250 0.490 --123.5 21.740 150.4 0.00545 38.1 0.800 --166.9 2300 0.416 --146.4 16.087 106.5 0.00314 33.9 0.864 --174.9 2350 0.352 --160.1 13.279 71.6 0.00239 24.9 0.879 --177.0 2400 0.321 --166.6 11.654 41.9 0.00175 33.1 0.891 --177.5 2450 0.274 --173.2 10.543 13.4 0.00197 27.7 0.908 --177.4 2500 0.233 --177.6 9.748 --13.4 0.00181 34.5 0.924 --177.5 2550 0.178 179.0 8.983 --40.5 0.00204 31.5 0.943 --177.7 2600 0.123 --167.7 8.199 --65.8 0.00218 35.6 0.957 --178.0 2650 0.108 --148.8 7.452 --89.9 0.00208 33.2 0.970 --178.7 2700 0.121 --132.6 6.730 --113.1 0.00198 23.8 0.978 --179.6 2750 0.146 --119.9 6.008 --135.3 0.00191 31.0 0.985 179.4 2800 0.184 --119.9 5.323 --156.1 0.00211 23.7 0.987 178.3 2850 0.214 --121.0 4.700 --175.6 0.00159 15.5 0.987 177.3 2900 0.261 --127.6 4.109 166.0 0.00205 14.6 0.985 176.3 2950 0.316 --134.0 3.591 149.0 0.00171 19.2 0.984 175.4 3000 0.372 --141.4 3.130 133.3 0.00103 16.7 0.984 174.5 3050 0.430 --150.2 2.733 118.1 0.00095 26.4 0.984 173.8 3100 0.485 --158.9 2.388 103.6 0.00103 36.9 0.984 173.2 3150 0.534 --166.3 2.091 90.1 0.00108 24.1 0.985 172.7 3200 0.585 --172.7 1.846 77.3 0.00127 47.6 0.984 172.4 3250 0.625 --178.0 1.635 65.2 0.00119 57.1 0.986 172.1 3300 0.657 177.3 1.472 52.9 0.00132 53.2 0.985 171.9 3350 0.686 173.2 1.342 40.8 0.00200 53.8 0.985 171.7 (continued) MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 11

Table7.CommonSourceS--Parameters(VDD=28V,IDQ1=160mA,IDQ2=550mA,TA=25°C,50OhmSystem)(continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 3400 0.702 169.7 1.243 28.4 0.00230 54.4 0.982 171.3 3450 0.718 166.7 1.193 10.8 0.00211 62.5 0.947 170.1 3500 0.721 164.7 0.937 3.1 0.00233 24.3 0.976 173.0 3550 0.746 162.0 0.914 --7.9 0.00213 51.7 0.981 171.9 3600 0.758 158.9 0.857 --21.4 0.00236 55.6 0.978 171.1 MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 12 FreescaleSemiconductor,Inc.

ALTERNATIVEPEAKTUNELOADPULLCHARACTERISTICS 53 53 52 P3dB=49.27dBm(85W) Ideal 52 P3dB=48.62dBm(73W) Ideal 51 51 50 50 P1dB=47.59dBm(57W) m) 49 P1dB=48.21dBm(66W) m) 49 B 48 Actual B 48 (d 47 (d 47 Actual R R E 46 E 46 W W O 45 O 45 P 44 P 44 T T U 43 U 43 P P T 42 T 42 U U O 41 O 41 P,out 4309 VDD=28Vdc,IDQ1=160mA,IDQ2=550mA P,out 4309 VDD=28Vdc,IDQ1=160mA,IDQ2=550mA PulsedCW,10μsec(on),10%DutyCycle, PulsedCW,10μsec(on),10%DutyCycle, 38 38 37 f=2500MHz 37 f=2700MHz 36 36 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin,INPUTPOWER(dBm) Pin,INPUTPOWER(dBm) NOTE:LoadPullTestFixtureTunedforPeakP1dBOutputPower@28V NOTE:LoadPullTestFixtureTunedforPeakP1dBOutputPower@28V TestImpedancesperCompressionLevel TestImpedancesperCompressionLevel Zsource Zload Zsource Zload Ω Ω Ω Ω P1dB 28.46+j5.15 1.67--j1.53 P1dB 36.24+j1.75 1.19--j1.29 Figure16.PulsedCWOutputPower Figure17.PulsedCWOutputPower versusInputPower@28V@2500MHz versusInputPower@28V@2700MHz MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 13

PACKAGEDIMENSIONS MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 14 FreescaleSemiconductor,Inc.

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 15

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 16 FreescaleSemiconductor,Inc.

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 17

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 18 FreescaleSemiconductor,Inc.

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 19

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 20 FreescaleSemiconductor,Inc.

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 21

MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData 22 FreescaleSemiconductor,Inc.

PRODUCTDOCUMENTATION,SOFTWAREANDTOOLS Refertothefollowingdocuments,softwareandtoolstoaidyourdesignprocess. ApplicationNotes • AN1907:SolderReflowAttachMethodforHighPowerRFDevicesinOver--MoldedPlasticPackages • AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers • AN1977:QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamily • AN1987:QuiescentCurrentControlfortheRFIntegratedCircuitDeviceFamily • AN3263:BoltDownMountingMethodforHighPowerRFTransistorsandRFICsinOver--MoldedPlasticPackages • AN3789:ClampingofHighPowerRFTransistorsandRFICsinOver--MoldedPlasticPackages EngineeringBulletins • EB212:UsingDataSheetImpedancesforRFLDMOSDevices Software • ElectromigrationMTTFCalculator • RFHighPowerModel ForSoftwareandTools,doaPartNumbersearchathttp://www.freescale.com,andselectthe(cid:147)PartNumber(cid:148)link.Gotothe Software&Toolstabonthepart(cid:146)sProductSummarypagetodownloadtherespectivetool. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 May2008 • InitialReleaseofDataSheet 1 Oct.2008 • CorrectedfootnotereferenceinTypicalPerformancesOFDMSignal--10MHzBandwidthtable,p.3 • UpdatedFig.13,MTTFversusJunctionTemperature,tocorrectacalculationerror,p.9 2 Feb.2010 • ModifiedVSWRratingtoshowthe3dBoverdrivecapability,p.1 • Correctedmaximuminputpowerleveltothetestedvalue,from13dBmto25dBminMaximumRatings table,p.2 • Fig.3,TestCircuitSchematic,correctedRogersRO4350Bdielectricconstantfrom3.66εrto3.5εr,p.5 • AddedAN3789,ClampingofHighPowerRFTransistorsandRFICsinOver--MoldedPlasticPackagesto ProductDocumentation,ApplicationNotes,p.24 3 Mar.2011 • Table1,MaximumRatings,increasedInputPowerfrom25dBmto30dBmtoreflectthetruecapabilityof thedevice,p.2 4 Oct.2011 • Table3,ESDProtectionCharacterization,removedtheword(cid:147)Minimum(cid:148)aftertheESDclassrating.ESD ratingsarecharacterizedduringnewproductdevelopmentbutarenot100%testedduringproduction.ESD ratingsprovidedinthedatasheetareintendedtobeusedasaguidelinewhenhandlingESDsensitive devices,p.2 • Fig.5,TestCircuitSchematic,correctedpinconnectionsforpinnumbers2,3,10and11toreflectactual pinfunctionality,p.5 • Fig.13,MTTFversusJunctionTemperatureremoved,p.9.Refertothedevice(cid:146)sMTTFCalculator availableatfreescale.com/RFpower.GotoDesignResources>SoftwareandTools. MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 RFDeviceData FreescaleSemiconductor,Inc. 23

HowtoReachUs: HomePage: www.freescale.com WebSupport: http://www.freescale.com/support USA/EuropeorLocationsNotListed: FreescaleSemiconductor,Inc. TechnicalInformationCenter,EL516 2100EastElliotRoad Tempe,Arizona85284 1--800--521--6274or+1--480--768--2130 www.freescale.com/support Europe,MiddleEast,andAfrica: FreescaleHalbleiterDeutschlandGmbH Informationinthisdocumentisprovidedsolelytoenablesystemandsoftware TechnicalInformationCenter implementerstouseFreescaleSemiconductorproducts.Therearenoexpressor Schatzbogen7 81829Muenchen,Germany impliedcopyrightlicensesgrantedhereundertodesignorfabricateanyintegrated +441296380456(English) circuitsorintegratedcircuitsbasedontheinformationinthisdocument. +46852200080(English) +498992103559(German) FreescaleSemiconductorreservestherighttomakechangeswithoutfurthernoticeto +33169354848(French) anyproductsherein.FreescaleSemiconductormakesnowarranty,representationor www.freescale.com/support guaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoes FreescaleSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseof Japan: anyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithout FreescaleSemiconductorJapanLtd. Headquarters limitationconsequentialorincidentaldamages.(cid:147)Typical(cid:148)parametersthatmaybe ARCOTower15F providedinFreescaleSemiconductordatasheetsand/orspecificationscananddo 1--8--1,Shimo--Meguro,Meguro--ku, varyindifferentapplicationsandactualperformancemayvaryovertime.Alloperating Tokyo153--0064 parameters,including(cid:147)Typicals(cid:148),mustbevalidatedforeachcustomerapplicationby Japan customer(cid:146)stechnicalexperts.FreescaleSemiconductordoesnotconveyanylicense 0120191014or+81354379125 underitspatentrightsnortherightsofothers.FreescaleSemiconductorproductsare support.japan@freescale.com notdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedfor surgicalimplantintothebody,orotherapplicationsintendedtosupportorsustainlife, Asia/Pacific: FreescaleSemiconductorChinaLtd. orforanyotherapplicationinwhichthefailureoftheFreescaleSemiconductorproduct ExchangeBuilding23F couldcreateasituationwherepersonalinjuryordeathmayoccur.ShouldBuyer No.118JianguoRoad purchaseoruseFreescaleSemiconductorproductsforanysuchunintendedor ChaoyangDistrict unauthorizedapplication,BuyershallindemnifyandholdFreescaleSemiconductor Beijing100022 anditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstall China claims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof, +861058798000 directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuch support.asia@freescale.com unintendedorunauthorizeduse,evenifsuchclaimallegesthatFreescale Semiconductorwasnegligentregardingthedesignormanufactureofthepart. ForLiteratureRequestsOnly: FreescaleSemiconductorLiteratureDistributionCenter 1--800--441--2447or+1--303--675--2140 FreescaletandtheFreescalelogoaretrademarksofFreescaleSemiconductor,Inc. Fax:+1--303--675--2150 Allotherproductorservicenamesarethepropertyoftheirrespectiveowners. LDCForFreescaleSemiconductor@hibbertgroup.com ©FreescaleSemiconductor,Inc.2008,2010--2011.Allrightsreserved. MW7IC2750NR1MW7IC2750GNR1MW7IC2750NBR1 DocumentNumber:MW7IC2750N RFDeviceData 2R4ev.4,10/2011 FreescaleSemiconductor,Inc.