Freescale Semiconductor DocumentNumber:MW7IC008N Technical Data Rev.3,12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on--chip matching that makes it usable from 20 to 1000 MHz. This multi--stage structure is rated for 24 to 32 volt operation and covers most narrow bandwidthcommunicationapplicationformats. DriverApplications 100--1000MHz,8WPEAK,28V  TypicalCWPerformance:VDD=28Volts,IDQ1=25mA,IDQ2=75mA RFLDMOSWIDEBAND INTEGRATEDPOWERAMPLIFIER Gps PAE Frequency (dB) (%) 100MHz@11WCW 23.5 55 400MHz@9WCW 22.5 41 900MHz@6.5WCW 23.5 34  CapableofHandling10:1VSWR,@32Vdc,900MHz,Pout=6.5WattsCW (3dBInputOverdrivefromRatedP ) out  Stableintoa5:1VSWR.AllSpursBelow--60dBc@1mWto8WattsCW PQFN88 P @900MHz out PLASTIC  TypicalPout@1dBCompressionPoint≃11WattsCW@100MHz, 9WattsCW@400MHz,6.5WattsCW@900MHz Features  Broadband,SingleMatchingNetworkfrom20to1000MHz  IntegratedQuiescentCurrentTemperatureCompensationwith Enable/DisableFunction(1)  IntegratedESDProtection  InTapeandReel.T1Suffix=1,000Units,16mmTapeWidth,13--inchReel. 1 VTTS1 VTTS2 DS V /1 NC RFoutSRFinS2NC VGS2VTTS2 QuiescentCurrent TemperatureCompensation(1) 24 23 22 21 20 19 VGLS1 1 18 NC NC 2 17 NC VGS1 VGS2 NC 3 16 NC NC 4 15 NC RFinS1 RFoutS2/VDS2 RFinS1 5 14 NC VGS1 6 7 8 9 10 11 12 13 RFoutS2/VDS2 RFoutS1/VDS1 RFinS2 TTS1NC NC GLS2NC NC V V Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.Gotohttp://www.freescale.com/rf.SelectDocumentation/ApplicationNotes--AN1977orAN1987. FreescaleSemiconductor,Inc.,2009,2011--2013.Allrightsreserved. MW7IC008NT1 RFDeviceData FreescaleSemiconductor,Inc. 1

Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage VDSS --0.5,+65 Vdc Gate--SourceVoltage VGS --6.0,+12 Vdc OperatingVoltage VDD 32,+0 Vdc StorageTemperatureRange Tstg --65to+150 C OperatingJunctionTemperature TJ 150 C 100MHzCWOperation@TA=25C(3) CW 11 W 400MHzCWOperation@TA=25C(3) 6 W 900MHzCWOperation@TA=25C(3) 5 W InputPower 100MHz Pin 27 dBm 400MHz 23 900MHz 38 Table2.ThermalCharacteristics Characteristic Symbol Value(1,2) Unit ThermalResistance,JunctiontoCase RJC C/W (CWSignal@100MHz) (CaseTemperature82C,Pout=11WCW) Stage1,28Vdc,IDQ1=25mA 5.3 Stage2,28Vdc,IDQ2=75mA 4.9 (CWSignal@400MHz) (CaseTemperature87C,Pout=9WCW) Stage1,28Vdc,IDQ1=25mA 4.4 Stage2,28Vdc,IDQ2=75mA 2.7 (CWSignal@900MHz) (CaseTemperature86C,Pout=6.5WCW) Stage1,28Vdc,IDQ1=25mA 3.5 Stage2,28Vdc,IDQ2=75mA 3.2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C 1. MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. 2. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. 3. CWRatingsattheindividualfrequenciesarelimitedbya100--yearMTTFrequirement.SeeMTTFcalculator(referencedinNote1). MW7IC008NT1 RFDeviceData 2 FreescaleSemiconductor,Inc.

Table5.ElectricalCharacteristics(TA=25Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit Stage1—OffCharacteristics ZeroGateVoltageDrainLeakageCurrent IDSS — — 10 Adc (VDS=65Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS — — 1 Adc (VDS=28Vdc,VGS=0Vdc) Gate--SourceLeakageCurrent IGSS — — 10 Adc (VGS=1.5Vdc,VDS=0Vdc) Stage1—OnCharacteristics GateThresholdVoltage VGS(th) 1.3 2 2.8 Vdc (VDS=10Vdc,ID=5.3Adc) GateQuiescentVoltage VGS(Q) 2 2.8 3.5 Vdc (VDD=28Vdc,ID=25mAdc,MeasuredinFunctionalTest) Stage2—OffCharacteristics ZeroGateVoltageDrainLeakageCurrent IDSS — — 10 Adc (VDS=65Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS — — 1 Adc (VDS=28Vdc,VGS=0Vdc) Gate--SourceLeakageCurrent IGSS — — 10 Adc (VGS=1.5Vdc,VDS=0Vdc) Stage2—OnCharacteristics GateThresholdVoltage VGS(th) 1.3 2 2.8 Vdc (VDS=10Vdc,ID=23Adc) GateQuiescentVoltage VGS(Q) 2 2.7 3.5 Vdc (VDD=28Vdc,ID=75mAdc,MeasuredinFunctionalTest) Drain--SourceOn--Voltage VDS(on) 0.1 0.3 1 Vdc (VGS=10Vdc,ID=3.6Adc) FunctionalTests(1)(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=25mA,IDQ2=75mA,Pout=6.5WCW,f=900MHz PowerGain Gps 21.5 23.5 31.5 dB PowerAddedEfficiency PAE 30 34 — % InputReturnLoss IRL — --15 --11 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=25mA,IDQ2=75mA Gps PAE IRL Frequency (dB) (%) (dB) 100MHz@11WCW 23.5 55 --20 400MHz@9WCW 22.5 41 --17 900MHz@6.5WCW 23.5 34 --15 1. Partinternallymatchedbothoninputandoutput. (continued) MW7IC008NT1 RFDeviceData FreescaleSemiconductor,Inc. 3

Table5.ElectricalCharacteristics(TA=25Cunlessotherwisenoted)(continued) Characteristic Symbol Min Typ Max Unit TypicalPerformances(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=25mA,IDQ2=75mA,100--1000MHzBandwidth Characteristic Symbol Min Typ Max Unit IMDSymmetry@6.8WPEP,PoutwhereIMDThirdOrder IMDsym MHz Intermodulation30dBc(1) — 0.1 — (DeltaIMDThirdOrderIntermodulationbetweenUpperandLower Sidebands>2dB) VBWResonancePoint(1) VBWres — 0.1 — MHz (IMDThirdOrderIntermodulationInflectionPoint) GainFlatnessin500--1000MHzBandwidth@Pout=6WAvg. GF — 1.35 — dB GainVariationoverTemperature G — 0.024 — dB/C (--30Cto+85C) OutputPowerVariationoverTemperature P1dB — 0.005 — dB/C (--30Cto+85C) TypicalCWPerformances—100MHz(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=25mA,IDQ2=75mA,Pout=11W CW,f=100MHz PowerGain Gps — 23.5 — dB PowerAddedEfficiency PAE — 55 — % InputReturnLoss IRL — --20 — dB Pout@1dBCompressionPoint,CW P1dB — 11 — W TypicalCWPerformances—400MHz(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=25mA,IDQ2=75mA,Pout=9W CW,f=400MHz PowerGain Gps — 22.5 — dB PowerAddedEfficiency PAE — 41 — % InputReturnLoss IRL — --17 — dB Pout@1dBCompressionPoint,CW P1dB — 9 — W TypicalCWPerformances—900MHz(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ1=25mA,IDQ2=75mA,Pout=6.5W CW,f=900MHz PowerGain Gps — 23.5 — dB PowerAddedEfficiency PAE — 34 — % InputReturnLoss IRL — --15 — dB Pout@1dBCompressionPoint,CW P1dB — 6.5 — W 1. Notrecommendedforwideinstantaneousbandwidthmodulatedsignals. MW7IC008NT1 RFDeviceData 4 FreescaleSemiconductor,Inc.

VDD1 VGG2 GND C17 VDD2 R12 R11 L7 C16 R10 L6 R9 C15 C13 C12 C3 C14 R1 L5 R8 C10 C11 C9 L2 C2 C8 L1 C1 L4 C4 C7 C5 L3 R4 R2 R5 R3 R6 C6 R7 MW7IC008N VGG1 Rev.1a GND Figure3.MW7IC008NT1TestCircuitComponentLayout Table6.MW7IC008NT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1 0.01FChipCapacitor GRM3195C1E103JA01 Murata C2,C15 0.1FChipCapacitors GRM219F51H104ZA01 Murata C3,C16 10FChipCapacitors GRM55DR61H106KA88L Murata C4,C5,C7,C8,C10, 0.01FChipCapacitors C0805C103K5RAC Kemet C11,C12,C14 C6,C17 1F,35VTantalumCapacitors TAJA105K035R AVX C9 2.2pFChipCapacitor ATC600S2R2CT250XT ATC C13 3.3pFChipCapacitor ATC600S3R3BT250XT ATC L1,L7 150nHCeramicChipInductors LL2012--FHLR15J Toko L2,L6 180nHCeramicChipInductors LL2012--FHLR18J Toko L3 1.6nHInductor 0603HC--1N6XJLW Coilcraft L4,L5 5.1nHInductors 0603HP--5N1XJLW Coilcraft R1,R12 510,1/10WChipResistors RR1220P--511--B--T5 Susumu R2,R3,R4 91,1/8WChipResistors CRCW080591R0FKEA Vishay R5*,R9* 0,2.5AChipResistors CRCW08050000Z0EA Vishay R6 10K,1/8WChipResistor CRCW080510K0JNEA Vishay R7,R11 12K,1/8WChipResistors CRCW080512K0JNEA Vishay R8 43,1/8WChipResistor CRCW080543R0FKEA Vishay R10 15K,1/8WChipResistor CRCW080515K0JNEA Vishay PCB 0.020,r=3.66 RO4350B Rogers *Addfortemperaturecompensation MW7IC008NT1 RFDeviceData FreescaleSemiconductor,Inc. 5

TYPICALCHARACTERISTICS 29 70 DED%) 28 VDD=28Vdc,IDQ1=25mA,IDQ2=75mA 60 ADY( 27 FixedPin=14.6dBmCW 50 WERENC AIN(dB) 2256 PAE 4300 PAE,POEFFICI G Gps S) WER 24 --5 14 WATT PO 23 --10 RN 12 R( G,ps 2221 IRL ----1250 UTRETUSS(dB) 180 TPOWE PO U 20 --25 INL 6 TP 19100 200 300Pout400 500 600 700 800 900 1000--30 IRL, 4 P,OUout f,FREQUENCY(MHz) Figure4.BroadbandPerformance@P =14.6dBmCW in --10 c) IM3--L B d ( IM3--U N O --20 TI IM5--U R O T IM5--L S DI --30 N O TI A UL --40 VDD=28Vdc,Pout=6.8W(PEP) D MO IM7--L IDQ1=25mA,IDQ2=75mA R Two--ToneMeasurements TE --50 (f1+f2)/2=CenterFrequencyof900MHz N I D, IM7--U M I --60 1 10 100 200 TWO--TONESPACING(MHz) Figure5.IntermodulationDistortionProducts versusTwo--ToneSpacing 26 90 25 80 %) ( Y 24 100MHz 70 C AIN(dB) 23 Gps 400MHz 900MHz 60 FFICIEN G E R 22 50 D WE VDD=28Vdc DE G,POps2210 IIDDQQ12==2755mmAA 100MHz 400MHz 4300 OWERAD PAE P 19 900MHz 20 AE, P 18 10 1 10 20 Pout,OUTPUTPOWER(WATTS)CW Figure6.PowerGainand PowerAdded EfficiencyversusOutputPower MW7IC008NT1 RFDeviceData 6 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS 30 0 20MHz 25 Gain --6 20 --12 AIN(dB) 15 --18 RL(dB) G IRL I 10 --24 VDD=28Vdc Pin=--10dBm 5 IDQ1=25mA --30 IDQ2=75mA 0 --36 0 200 400 600 800 1000 1200 1400 1600 f,FREQUENCY(MHz) Figure7.BroadbandFrequencyResponse MW7IC008NT1 RFDeviceData FreescaleSemiconductor,Inc. 7

VDD=28Vdc,IDQ1=25mA,IDQ2=75mA Pout =11W@100MHz,9W@400MHz,6.5W@900MHz f Zin Zload MHz   100 49.78+j1.07 47.87--j9.85 150 48.96+j1.44 49.12--j5.44 200 48.00+j1.54 49.09--j2.66 250 46.67+j1.36 48.63--j0.79 300 45.30+j0.91 47.73+j0.49 350 43.93+j0.11 46.60+j1.22 400 42.53--j0.86 45.63+j1.43 450 41.38--j2.16 44.97+j1.13 500 40.30--j3.71 45.04+j0.70 550 39.38--j5.44 45.23+j0.77 600 38.43--j7.11 44.80+j1.29 650 37.94--j8.71 44.32+j1.48 700 37.49--j10.52 43.57+j1.51 750 37.31--j12.42 43.19+j1.32 800 37.00--j14.03 42.61+j0.77 850 36.74--j15.64 42.25+j0.39 900 36.57--j17.09 41.90+j0.03 950 36.37--j18.59 41.67--j0.41 1000 36.12--j20.06 41.77--j1.10 1050 35.58--j21.43 41.82--j1.60 1100 35.00--j22.79 41.90--j2.01 1150 34.53--j24.39 42.26--j2.43 1200 33.53--j25.97 42.51--j2.80 1250 32.67--j27.84 42.74--j2.99 1300 31.61--j29.89 43.10--j3.11 1350 30.61--j32.34 43.52--j3.19 1400 29.55--j34.81 43.86--j3.13 1450 28.23--j37.61 44.03--j3.03 1500 27.34--j40.59 44.33--j2.67 Zin = Deviceinputimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasuredfrom draintoground. Device Output UnderTest Matching Network Z Z in load Figure8.SeriesEquivalentInputandLoadImpedance MW7IC008NT1 RFDeviceData 8 FreescaleSemiconductor,Inc.

PACKAGEDIMENSIONS MW7IC008NT1 RFDeviceData FreescaleSemiconductor,Inc. 9

MW7IC008NT1 RFDeviceData 10 FreescaleSemiconductor,Inc.

MW7IC008NT1 RFDeviceData FreescaleSemiconductor,Inc. 11

PRODUCTDOCUMENTATIONANDSOFTWARE Refertothefollowingdocumentsandsoftwaretoaidyourdesignprocess. ApplicationNotes  AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers  AN1977QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamily  AN1987QuiescentCurrentControlfortheRFIntegratedCircuitDeviceFamily EngineeringBulletins  EB212:UsingDataSheetImpedancesforRFLDMOSDevices Software  ElectromigrationMTTFCalculator  RFHighPowerModel  .s2pFile ForSoftware,doaPartNumbersearchathttp://www.freescale.com,andselectthe“PartNumber”link.GototheSoftware &Toolstabonthepart’sProductSummarypagetodownloadtherespectivetool. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 Aug.2009  InitialReleaseofDataSheet 1 Sept.2009  ModifiedFig.3,TestCircuitComponentLayoutandTable6,TestCircuitComponentDesignationsand Valuestoincludetemperaturecompensationoptions,p.5  Fig.3,TestCircuitComponentLayout,correctedVDD1toVGG1,p.5  Table6,TestCircuitComponentDesignationsandValues,C6,C17:updateddescriptionfrom“1F TantalumCapacitors”to“1F,35VTantalumCapacitors”;L1,L7,L2,L6:correctedmanufacturerfrom CoilcrafttoToko;L3:correctedpartnumberfrom“0603HC--1N6XJLC”to“0603HC--1N6XJLW”;L4,L5: correctedpartnumberfrom“100B100JT500XT”to“0603HP--5N1XJLW”;R1,R12:updateddescription from“510ChipResistors”to“510,1/10WChipResistors”,p.5 2 Mar.2011  Updatedfrequencyinoverviewparagraphfrom“100to1000MHz”to“20to1000MHz”toreflectlower 20MHzcapabilityandnarrowbandwidthmodulation,p.1  UpdatedIMDsymTypicalvaluefrom180MHzto0.1MHzandVBWresTypicalvaluefrom210MHzto 0.1MHz;modifiedFootnote1toreflectlimiteddevicecapabilityregardingwidevideobandwidth,Typical Performancetable,p.4 2.1 Mar.2012  Table3,ESDProtectionCharacteristics,removedtheword“Minimum”aftertheESDclassrating.ESD ratingsarecharacterizedduringnewproductdevelopmentbutarenot100%testedduringproduction.ESD ratingsprovidedinthedatasheetareintendedtobeusedasaguidelinewhenhandlingESDsensitive devices,p.2 3 Dec.2013  Table6,TestCircuitComponentDesignationsandValues:updatedPCBdescriptiontoreflectmost currentboardspecificationsfromRogers,p.5  ReplacedCaseOutline98ASA10760D,Rev.OwithRev.A,pp.9--11.Mechanicaloutlinedrawing modifiedtoreflectthecorrectleadendfeatures.Formatofthemechanicaloutlinewasalsoupdatedtothe currentFreescaleformatforFreescalemechanicaloutlines. MW7IC008NT1 RFDeviceData 12 FreescaleSemiconductor,Inc.

HowtoReachUs: Informationinthisdocumentisprovidedsolelytoenablesystemandsoftware implementerstouseFreescaleproducts.Therearenoexpressorimpliedcopyright HomePage: licensesgrantedhereundertodesignorfabricateanyintegratedcircuitsbasedonthe freescale.com informationinthisdocument. WebSupport: Freescalereservestherighttomakechangeswithoutfurthernoticetoanyproducts freescale.com/support herein.Freescalemakesnowarranty,representation,orguaranteeregardingthe suitabilityofitsproductsforanyparticularpurpose,nordoesFreescaleassumeany liabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecifically disclaimsanyandallliability,includingwithoutlimitationconsequentialorincidental damages.“Typical”parametersthatmaybeprovidedinFreescaledatasheetsand/or specificationscananddovaryindifferentapplications,andactualperformancemay varyovertime.Alloperatingparameters,including“typicals,”mustbevalidatedfor eachcustomerapplicationbycustomer’stechnicalexperts.Freescaledoesnotconvey anylicenseunderitspatentrightsnortherightsofothers.Freescalesellsproducts pursuanttostandardtermsandconditionsofsale,whichcanbefoundatthefollowing address:freescale.com/SalesTermsandConditions. FreescaleandtheFreescalelogoaretrademarksofFreescaleSemiconductor,Inc., Reg.U.S.Pat.&Tm.Off.Allotherproductorservicenamesarethepropertyoftheir respectiveowners. E2009,2011--2013FreescaleSemiconductor,Inc. MW7IC008NT1 DRoFcuDmeenvticNeumDbaert:aMW7IC008N RFerve.e3,s1c2a/2le013Semiconductor,Inc. 13

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