MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G Surface Mount Ultrafast Power Rectifiers www.onsemi.com Ideally suited for high voltage, high frequency rectification, or as ULTRAFAST RECTIFIERS free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. 2 AMPERES, 300−400 VOLTS Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, TJ = 150°C) SMB • NRVUS and SURS8 Prefixes for Automotive and Other Applications CASE 403A Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MARKING DIAGRAM • These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: • AYWW Case: Epoxy, Molded U2x(cid:2) • Weight: 95 mg (Approximately) (cid:2) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location 260°C Max. for 10 Seconds Y = Year • WW = Work Week Polarity: Polarity Band Indicates Cathode Lead U2x = Device Code • ESD Rating: x= F for MURS230T3 = G for MURS240T3 ♦ Human Body Model = 3A (> 4 kV) (cid:2) = Pb−Free Package ♦ Machine Model = C (> 400 V) (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MURS230T3G SMB 2,500 / (Pb−Free) Tape & Reel NRVUS230T3G,- SMB 2,500 / NRVUS230VT3G (Pb−Free) Tape & Reel MURS240T3G SMB 2,500 / (Pb−Free) Tape & Reel NRVUS240T3G, SMB 2,500 / NRVUS240VT3G (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 − Rev. 9 MURS230T3/D

MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR MURS230T3G/NRVUS230T3G 300 MURS240T3G/NRVUS240T3G 400 Average Rectified Forward Current IF(AV) A @ TL = 150°C 1.0 @ TL = 125°C 2.0 Non−Repetitive Peak Surge Current IFSM A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 35 Operating Junction Temperature Range TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction−to−Lead (TL = 25°C) R(cid:2)JL 13 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 2.0 A, TJ = 25°C) 1.30 (iF = 2.0 A, TJ = 150°C) 1.05 Maximum Instantaneous Reverse Current (Note 1) iR (cid:3)A (Rated DC Voltage, TJ = 25°C) 5.0 (Rated DC Voltage, TJ = 150°C) 150 Maximum Reverse Recovery Time trr ns (iF = 1.0 A, di/dt = 50 A/(cid:3)s) 65 (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) 50 Maximum Forward Recovery Time tfr ns (iF = 1.0 A, di/dt = 100 A/(cid:3)s, Rec. to 1.0 V) 50 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle ≤ 2.0%. www.onsemi.com 2

MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G 10 10 7.0 7.0 5.0 5.0 3.0 3.0 175°C 100°C 175°C 100°C S) 2.0 S) 2.0 P P M M A A NT ( TC = 25°C NT ( TC = 25°C E 1.0 E 1.0 R R R R U U C C D 0.7 D 0.7 R R A A W W R 0.5 R 0.5 O O F F S S U U O 0.3 O 0.3 E E N N A A NT 0.2 NT 0.2 A A T T S S N N , IF , IF I 0.1 I 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 1000 TJ = 175°C (cid:3)A) 10 (cid:3)A) TJ = 175°C T ( TJ = 150°C T ( 100 N N E E TJ = 150°C R 1 R CUR TJ = 100°C CUR 10 TJ = 100°C E E S 0.1 S R R E E V V E E 1 I, RR 0.01 TJ = 25°C I, RR TJ = 25°C 0.001 0.1 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current for * The curves shown are typical for the highest voltage device in the voltage MURS230T3G, NRVUS230T3G grouping. Typical reverse current for lower voltage selections can be estim­ ated from these same curves if applied VR is sufficiently below rated VR. www.onsemi.com 3

MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G 1000 A) TJ = 175°C (cid:3) T ( 100 N RE TJ = 150°C R U C 10 TJ = 100°C E S R E V E 1 R , R TJ = 25°C I 0.1 0 50 100 150 200 250 300 350 400 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Maximum Reverse Current for MURS240T3G, NRVUS240T3G 30 35 30 25 NOTE: TYPICAL NOTE: MAXIMUM CAPACITANCE AT CAPACITANCE AT pF) 20 0 V = 26 pF pF) 25 0 V = 30 pF E ( E ( C C 20 N N TA 15 TA ACI ACI 15 P P CA 10 CA C, C, 10 5 5 0 0 0 4.0 8.0 12 16 20 24 28 32 36 40 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance Figure 7. Maximum Capacitance RD CURRENT (AMPS) 106789 RATEDR V(cid:2)TJOJL L ==T 1A17G35°E°CC A/WPPLIED DISSIPATION (WATTS) 345 TJ = 175°C WA 5 dc ER R W O 4 O 2 SQUARE WAVE F P GE 3 GE RA RA dc E 2 E 1 I, AVF(AV) 1080 90SQU10A0RE W11A0VE120 130 140 150 160 170 180 P, AVF(AV) 0 0 0.5 1.0 1.5 2.0 2.5 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 8. Current Derating, Case Figure 9. Power Dissipation www.onsemi.com 4

MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 1.95 2.30 2.47 0.077 0.091 0.097 b D A1 0.05 0.10 0.20 0.002 0.004 0.008 b 1.96 2.03 2.20 0.077 0.080 0.087 c 0.15 0.23 0.31 0.006 0.009 0.012 DD 3.30 3.56 3.95 0.130 0.140 0.156 E 4.06 4.32 4.60 0.160 0.170 0.181 POOPLTAIORNITAYL IANSD INCEAETDOERD HE 5.21 5.44 5.60 0.205 0.214 0.220 L 0.76 1.02 1.60 0.030 0.040 0.063 L1 0.51 REF 0.020 REF A A1 L L1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 (cid:2) (cid:3) 0.085 mm SCALE 8:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MURS230T3/D 5