ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 单 > MURS210T3G
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MURS210T3G产品简介:
ICGOO电子元器件商城为您提供MURS210T3G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MURS210T3G价格参考¥0.58-¥0.58。ON SemiconductorMURS210T3G封装/规格:二极管 - 整流器 - 单, 标准 表面贴装 二极管 100V 2A SMB。您可以下载MURS210T3G参考资料、Datasheet数据手册功能说明书,资料中有MURS210T3G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ULTRA FAST 100V 2A SMB整流器 100V 2A Ultrafast |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,ON Semiconductor MURS210T3G- |
数据手册 | |
产品型号 | MURS210T3G |
PCN组件/产地 | |
不同If时的电压-正向(Vf) | 940mV @ 2A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 2µA @ 100V |
二极管类型 | 标准 |
产品 | Ultra Fast Recovery Rectifiers |
产品种类 | 整流器 |
供应商器件封装 | SMB |
其它名称 | MURS210T3G-ND |
包装 | 带卷 (TR) |
反向恢复时间(trr) | 30ns |
反向电压 | 100 V |
反向电流IR | 2 uA |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | DO-214AA,SMB |
封装/箱体 | SMB |
工作温度-结 | -60°C ~ 175°C |
工厂包装数量 | 2500 |
恢复时间 | 30 ns |
最大工作温度 | + 175 C |
最大浪涌电流 | 50 A |
最小工作温度 | - 65 C |
标准包装 | 2,500 |
正向电压下降 | 0.94 V |
正向连续电流 | 2 A |
热阻 | 13°C/W Jl |
电压-DC反向(Vr)(最大值) | 100V |
电流-平均整流(Io) | 2A |
系列 | MURS210 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G Surface Mount Ultrafast Power Rectifiers www.onsemi.com Ideally suited for high voltage, high frequency rectification, or as ULTRAFAST RECTIFIERS free wheeling and protection diodes in surface mount applications 2 AMPERES, 50−100 VOLTS where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction SMB • Low Forward Voltage Drop (0.74 V Max @ 2.0 A, TJ = 150°C) CASE 403A • SURS8 Prefix for Automotive and Other Applications Requiring MARKING DIAGRAM Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • AYWW These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS U2x(cid:2) Compliant (cid:2) Mechanical Characteristics: • A = Assembly Location* Case: Epoxy, Molded Y = Year • Weight: 95 mg (Approximately) WW = Work Week • Finish: All External Surfaces Corrosion Resistant and Terminal U2x = Device Code x= A for MURS205T3G Leads are Readily Solderable = B for MURS210T3G • Lead and Mounting Surface Temperature for Soldering Purposes: (cid:2) = Pb−Free Package 260°C Max. for 10 Seconds (Note: Microdot may be in either location) • Polarity: Polarity Band Indicates Cathode Lead * The Assembly Location Code (A) is front side • ESD Ratings: optional. In cases where the Assembly Location is ♦ Machine Model = C (> 400V) stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ♦ Human Body Model = 3A (> 4kV) ORDERING INFORMATION Device Package Shipping† MURS205T3G SMB 2,500 Tape & Reel (Pb−Free) SURS8205T3G SMB 2,500 Tape & Reel (Pb−Free) MURS210T3G SMB 2,500 Tape & Reel (Pb−Free) SURS8210T3G SMB 2,500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: April, 2017 − Rev. 3 MURS205T3/D
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR MURA205T3G, SURS8205T3G 50 MURA210T3G, SURS8210T3G 100 Average Rectified Forward Current IF(AV) A @ TL = 150°C 1.0 @ TL = 125°C 2.0 Non-Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 50 Operating Junction Temperature TJ −60 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Lead (TL = 25°C) R(cid:2)JL 13 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 2.0 A, TJ = 25°C) 0.94 (iF = 2.0 A, TJ = 150°C) 0.74 Maximum Instantaneous Reverse Current (Note 1) iR (cid:3)A (Rated dc Voltage, TJ = 25°C) 2.0 (Rated dc Voltage, TJ = 150°C) 50 Maximum Reverse Recovery Time trr ns (iF = 1.0 A, di/dt = 50 A/(cid:3)s) 30 (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) 20 Maximum Forward Recovery Time tfr 20 ns (iF = 1.0 A, di/dt = 100 A/(cid:3)s, Rec. to 1.0 V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle ≤ 2.0%. www.onsemi.com 2
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G 10 10 7.0 7.0 5.0 5.0 3.0 3.0 175°C 2.0 175°C 100°C 2.0 S) P A) T (AM 1.0 (cid:3)NT ( 1.0 100°C N E E R R R R 0.7 U 0.7 U C C D D 0.5 R 0.5 R A WA 25°C RW TC = 25°C R O O 0.3 F 0.3 F S S U U 0.2 O 0.2 O E E N N A A T T N N 0.1 A 0.1 A T T S S N , INF0.07 , IIF0.07 I 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 100 (cid:3)A) TJ = 175°C (cid:3)A) TJ = 175°C T ( 10 T ( 10 N N E E RR RR TJ = 100°C U U SE C 1 TJ = 100°C SE C 1 TJ = 25°C R R E E REV 0.1 TJ = 25°C REV 0.1 , R , R I I 0.01 0.01 0 20 40 60 80 100 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. www.onsemi.com 3
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G 50 50 NOTE: TYPICAL NOTE: MAXIMUM 45 45 CAPACITANCE AT CAPACITANCE AT 40 0 V = 44 V 40 0 V = 47 V F) F) p 35 p 35 E ( E ( C 30 C 30 N N A A T 25 T 25 CI CI A 20 A 20 P P A A C 15 C 15 C, C, 10 10 5 5 0 0 0 4 8 12 16 20 24 28 32 36 40 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance Figure 6. Maximum Capacitance MPS) 10 TTS) 4 A A NT ( 9 RATEDR V(cid:2)JOCL =T A1G3°EC A/WPPLIED N (W3.5 TJ = 175°C RRE 8 TJ = 175°C TIO 3 U 7 A D C 6 SSIP2.5 WAR 5 dc R DI 2 R E SQUARE WAVE O 4 W F O1.5 E 3 P RAG 2 AGE 1 dc AVE AV), 10 SQUARE WAVE AVER F,0.05 F( 80 90 100 110 120 130 140 150 160 170 180 P 0 0.5 1 1.5 2 2.5 I TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Current Derating, Case Figure 8. Power Dissipation www.onsemi.com 4
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 1.95 2.30 2.47 0.077 0.091 0.097 b D A1 0.05 0.10 0.20 0.002 0.004 0.008 b 1.96 2.03 2.20 0.077 0.080 0.087 c 0.15 0.23 0.31 0.006 0.009 0.012 DD 3.30 3.56 3.95 0.130 0.140 0.156 E 4.06 4.32 4.60 0.160 0.170 0.181 POOPLTAIORNITAYL IANSD INCEAETDOERD HE 5.21 5.44 5.60 0.205 0.214 0.220 L 0.76 1.02 1.60 0.030 0.040 0.063 L1 0.51 REF 0.020 REF A A1 L L1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 (cid:2) (cid:3) 0.085 mm SCALE 8:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MURHD560/D 5