MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series Surface Mount Ultrafast Power Rectifiers www.onsemi.com MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, MURS140T3G, MURS160T3G, ULTRAFAST RECTIFIERS SURS8105T3G, SURS8110T3G, SURS8115T3G, 1.0 AMPERE, 50−600 VOLTS SURS8120T3G, SURS8140T3G, SURS8160T3G, NRVUS110VT3G, NRVUS120VT3G, NRVUS160VT3G Ideally suited for high voltage, high frequency rectification, or as SMB free wheeling and protection diodes in surface mount applications CASE 403A where compact size and weight are critical to the system. MARKING DIAGRAM Features • Small Compact Surface Mountable Package with J−Bend Leads • AYWW Rectangular Package for Automated Handling U1x(cid:2) • High Temperature Glass Passivated Junction (cid:2) • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, T = 150°C) J • NRVUS and SURS8 Prefixes for Automotive and Other Applications A =Assembly Location* Requiring Unique Site and Control Change Requirements; Y =Year WW =Work Week AEC−Q101 Qualified and PPAP Capable U1 =Device Code • These Devices are Pb−Free and are RoHS Compliant x = A, B, C, D, G, or J (cid:2) =Pb−Free Package Mechanical Characteristics: (Note: Microdot may be in either location) • Case: Epoxy, Molded * The Assembly Location code (A) is front side • Weight: 95 mg (Approximately) optional. In cases where the Assembly Location is • stamped in the package bottom (molding ejecter Finish: All External Surfaces Corrosion Resistant and Terminal pin), the front side assembly code may be blank. Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: ORDERING INFORMATION 260°C Max. for 10 Seconds • See detailed ordering and shipping information in the table on Polarity: Polarity Band Indicates Cathode Lead page 2 of this data sheet. • ESD Rating: ♦ Human Body Model = 3B (> 8 kV) DEVICE MARKING INFORMATION ♦ Machine Model = C (> 400 V) See general marking information in the device marking table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 − Rev. 16 MURS120T3/D

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MAXIMUM RATINGS MURS/SURS8/NRVUS Rating Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Unit Peak Repetitive Reverse Voltage VRRM 50 100 150 200 400 600 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 1.0 @ TL = 155°C 1.0 @ TL = 150°C A 2.0 @ TL = 145°C 2.0 @ TL = 125°C Non−Repetitive Peak Surge Current, (Surge applied IFSM 40 35 A at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature TJ (cid:2)65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS MURS/SURS8/NRVUS Rating Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Unit Thermal Resistance R(cid:2)JL °C/W Junction−to−Lead (TL = 25°C) 13 ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 1.0 A, TJ = 25°C) 0.875 1.25 (iF = 1.0 A, TJ = 150°C) 0.71 1.05 Maximum Instantaneous Reverse Current (Note 1) iR (cid:3)A (Rated DC Voltage, TJ = 25°C) 2.0 5.0 (Rated DC Voltage, TJ = 150°C) 50 150 Maximum Reverse Recovery Time trr ns (iF = 1.0 A, di/dt = 50 A/(cid:3)s, VR = 30 V) 35 75 (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) 25 50 Maximum Forward Recovery Time tfr ns (iF = 1.0 A, di/dt = 100 A/(cid:3)s, Rec. to 1.0 V) 25 50 Typical Peak Reverse Recovery Current IRM 0.75 1.60 A (IF = 1.0 A, di/dt = 50 A/(cid:3)s) 1. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle (cid:3) 2.0%. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping† MURS105T3G, U1A SMB 2,500 Units / Tape & Reel SURS8105T3G* (Pb−Free) MURS110T3G, NRVUS110VT3G* U1B SMB 2,500 Units / Tape & Reel SURS8110T3G* (Pb−Free) MURS115T3G, U1C SMB 2,500 Units / Tape & Reel SURS8115T3G* (Pb−Free) MURS120T3G, NRVUS120VT3G* U1D SMB 2,500 Units / Tape & Reel SURS8120T3G* (Pb−Free) MURS140T3G, U1G SMB 2,500 Units / Tape & Reel SURS8140T3G* (Pb−Free) MURS160T3G, NRVUS160VT3G* U1J SMB 2,500 Units / Tape & Reel SURS8160T3G* (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, NRVUS110VT3G, NRVUS120VT3G 10 80 7.0 4200 TJ = 175°C A) 5.0 (cid:3)NT ( 48..00 E 2.0 R 3.0 CUR 00..84 TJ = 100°C 175°C 100°C SE 0.2 R T (AMPS) 2.0 TC = 25°C I, REVER0000.0...00008428 TJ = 25°C N 1.0 E 0.004 R R 0.002 U C 0.7 D 0 20 40 60 80 100 120 140 160 180 200 R WA 0.5 VR, REVERSE VOLTAGE (VOLTS) R FO Figure 2. Typical Reverse Current* US 0.3 *The curves shown are typical for the highest voltage device in the O E voltage grouping. Typical reverse current for lower voltage selections N TA 0.2 can be estimated from these same curves if applied VR is sufficiently AN below rated VR. T S N , IF 0.1 50 i 45 0.07 40 NOTE: TYPICAL CAPACITANCE AT 0.05 pF) 35 0 V = 45 pF CE ( 30 N A T 25 0.03 CI A P 20 A 0.02 C C, 15 10 0.01 5.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 30 40 50 60 70 80 90 100 Figure 1. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance RD CURRENT (AMPS) 67891....00000 RATEDR V(cid:2)TJOJC L= =T 1 A17G35°E°CC A/WPPLIED DISSIPATION (WATTS) 345...000 (CATPJA =C 1IT7A5°NCCE(cid:2)LOAD)IIPAKV(cid:4)20 10 5.0 WA 5.0 ER R W O 4.0 O 2.0 DC F P GE 3.0 DC GE RA RA SQUARE WAVE E 2.0 E 1.0 I, AVF(AV) 1.00 80 90 100 110 120 13S0QUA1R40E WA1V5E0 160 170 180 P, AVF(AV) 0 0 0.5 1.0 1.5 2.0 2.5 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case Figure 5. Power Dissipation www.onsemi.com 3

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G 10 400 200 57..00 175°C (cid:3)T ( A) 482000 TJ = 175°C N 100°C E 8.0 R 3.0 CUR 42..00 TJ = 100°C TC = 25°C RSE 0.8 2.0 E 0.4 S) EV 0.2 P R AM , R 0.08 TJ = 25°C T ( I 0.04 N 1.0 0.02 E RR 0.008 CU 0.7 0.004 D 0 100 200 300 400 500 600 700 R WA 0.5 VR, REVERSE VOLTAGE (VOLTS) R O Figure 7. Typical Reverse Current* F US 0.3 *The curves shown are typical for the highest voltage device in the O E voltage grouping. Typical reverse current for lower voltage selections N TA 0.2 can be estimated from these same curves if applied VR is sufficiently AN below rated VR. T S N i , IF 0.1 25 0.07 20 NOTE: TYPICAL CAPACITANCE AT 0.05 pF) 0 V = 24 pF CE ( 15 N A T 0.03 CI A P 10 A 0.02 C C, 5.0 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40 Figure 6. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS) Figure 8. Typical Capacitance MPS) 91.00 RATED VOLTAGE APPLIED ATTS) 5.0 (CAPACITANCE LOAD) 10 5.0 RD CURRENT (A 678...000 R(cid:2)TJJC = = 1 1735°°CC/W DISSIPATION (W 34..00 IIPAKV(cid:4)20 SQUARE WADVEC WA 5.0 ER TJ = 175°C R W O 4.0 O 2.0 F P GE 3.0 DC GE A A R R E 2.0 E 1.0 I, AVF(AV) 1.00 0 20 40 60 80 1S0Q0UAR12E0 WAV1E40 160 180 200 P, AVF(AV) 0 0 0.5 1.0 1.5 2.0 2.5 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Current Derating, Case Figure 10. Power Dissipation www.onsemi.com 4

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 1.95 2.30 2.47 0.077 0.091 0.097 b D A1 0.05 0.10 0.20 0.002 0.004 0.008 b 1.96 2.03 2.20 0.077 0.080 0.087 c 0.15 0.23 0.31 0.006 0.009 0.012 DD 3.30 3.56 3.95 0.130 0.140 0.156 E 4.06 4.32 4.60 0.160 0.170 0.181 POOPLTAIORNITAYL IANSD INCEAETDOERD HE 5.21 5.44 5.60 0.205 0.214 0.220 L 0.76 1.02 1.60 0.030 0.040 0.063 L1 0.51 REF 0.020 REF A A1 L L1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 (cid:5) (cid:6) 0.085 mm SCALE 8:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com MURS120T3/D 5