MUR480EG, MUR4100EG SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability http://onsemi.com These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features ULTRAFAST RECTIFIER • 20 mJ Avalanche Energy Guaranteed 4.0 AMPERES, 800−1000 VOLTS • Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits • Ultrafast 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Reverse Voltage to 1000 V • These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) AXIAL LEAD • Finish: All External Surfaces Corrosion Resistant and Terminal CASE 267 Leads are Readily Solderable STYLE 1 • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • MARKING DIAGRAM Shipped in Plastic Bags, 5,000 per Bag • Available Tape and Reel, 1,500 per Reel, by Adding a “RL’’ Suffix to the Part Number • Polarity: Cathode indicated by Polarity Band A MUR MAXIMUM RATINGS 4xxx YYWW(cid:2) Rating Symbol Value Unit (cid:2) Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage MUR480E VR 800 MUR4100E 1000 A = Assembly Location Average Rectified Forward Current IF(AV) 4.0 @ A MUR4xxx= Device Number (see page 2) (Square Wave; Mounting Method #3 Per Note 2) TA = 35°C YY = Year WW = Work Week Non−Repetitive Peak Surge Current IFSM 70 A (cid:2) = Pb−Free Package (Surge Applied at Rated Load Conditions (Note: Microdot may be in either location) Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature TJ, Tstg −65 to °C Range +175 ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum See detailed ordering and shipping information on page 2 of Ratings are stress ratings only. Functional operation above the Recommended this data sheet. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2013 − Rev. 9 MUR480E/D

MUR480EG, MUR4100EG THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance, Junction−to−Ambient R(cid:2)JA See Note 2 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 3.0 A, TJ = 150°C) 1.53 (iF = 3.0 A, TJ = 25°C) 1.75 (iF = 4.0 A, TJ = 25°C) 1.85 Maximum Instantaneous Reverse Current (Note 1) iR (cid:3)A (Rated dc Voltage, TJ = 150°C) 900 (Rated dc Voltage, TJ = 25°C) 25 Maximum Reverse Recovery Time trr ns (IF = 1.0 Amp, di/dt = 50 Amp/(cid:3)s) 100 (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) 75 Maximum Forward Recovery Time tfr 75 ns (IF = 1.0 Amp, di/dt = 100 Amp/(cid:3)s, Recovery to 1.0 V) Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 20 mJ Typical Peak Reverse Recovery Current IRM 2 A (IF = 1.0 A, di/dt = 50 A/(cid:3)s) 1. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle (cid:2)2.0%. ORDERING INFORMATION Device Marking Package Shipping† MUR480E Axial Lead* 500 Units / Bulk MUR480EG Axial Lead* 500 Units / Bulk MUR480E MUR480ERL Axial Lead* 1500 / Tape & Reel MUR480ERLG Axial Lead* 1500 / Tape & Reel MUR480ES Axial Lead* 500 Units / Bulk MUR480ES MUR480ESG Axial Lead* 500 Units / Bulk MUR4100E Axial Lead* 500 Units / Bulk MUR4100EG Axial Lead* 500 Units / Bulk MUR4100E MUR4100ERL Axial Lead* 1500 / Tape & Reel MUR4100ERLG Axial Lead* 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2

MUR480EG, MUR4100EG MUR480EG, MUR4100EG 20 1000 420000 TJ = 175°C 10 TJ = 175°C 100°C25°C (cid:3)ENT ( A) 142100000 100°C R 7.0 R 4.0 CU 2.0 5.0 SE 1.0 25°C R 0.4 VE 0.2 E 0.1 R AMPS) 3.0 I, R 000...000142 *dTehveic ecu inrv tehse s vhooltwang ea rger otyuppiicnagl. fToyr pthicea hl rigehveesrst ev oclutarrgeent T ( 2.0 0.004 for lower voltage selections can be estimated from these EN 0.002 same curves if VR is sufficiently below rated VR. R 0.001 UR 0 100 200 300 400 500 600 700 800 900 1000 C RD 1.0 VR, REVERSE VOLTAGE (VOLTS) A W Figure 2. Typical Reverse Current* R 0.7 O F US 0.5 O E N A STANT 0.3 AMPS) 10 Rated VR , INF 0.2 ENT ( 8.0 R(cid:2)JA = 28°C/W i R R U C 0.1 RD 6.0 A W 0.07 OR F 4.0 dc E 0.05 G A R SQUARE WAVE E V 2.0 A 0.03 , V) A 0.02 IF( 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 0 50 100 150 200 250 vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 1. Typical Forward Voltage Figure 3. Current Derating (Mounting Method #3 Per Note 2) S) 10 70 T AT 9.0 TJ = 175°C 60 W N ( 8.0 50 O 5.0 SSIPATI 67..00 E (pF) 40 TJ = 25°C DI 10 C 30 OWER 45..00 (CaLpoaacdit)ive IIPAVK =20 dc ACITAN 20 P P RAGE 3.0 SQUAREWAVE C, CA E 2.0 AV 10 , AV) 1.0 89..00 F( 0 7.0 P 0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. Power Dissipation Figure 5. Typical Capacitance http://onsemi.com 3

MUR480EG, MUR4100EG +VDD IL 40 (cid:3)H COIL BVDUT VD ID MERCURY SWITCH ID IL DUT S1 VDD t0 t1 t2 t Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms The unclamped inductive switching circuit shown in component resistances. Assuming the component resistive Figure 6 was used to demonstrate the controlled avalanche elements are small Equation (1) approximates the total capability of the new “E’’ series Ultrafast rectifiers. A energy transferred to the diode. It can be seen from this mercury switch was used instead of an electronic switch to equation that if the V voltage is low compared to the DD simulate a noisy environment when the switch was being breakdown voltage of the device, the amount of energy opened. contributed by the supply during breakdown is small and the When S is closed at t the current in the inductor I ramps total energy can be assumed to be nearly equal to the energy 1 0 L up linearly; and energy is stored in the coil. At t the switch stored in the coil during the time when S was closed, 1 1 is opened and the voltage across the diode under test begins Equation (2). to rise rapidly, due to di/dt effects, when this induced voltage The oscilloscope picture in Figure 8, shows the reaches the breakdown voltage of the diode, it is clamped at information obtained for the MUR8100E (similar die BV and the diode begins to conduct the full load current construction as the MUR4100E Series) in this test circuit DUT which now starts to decay linearly through the diode, and conducting a peak current of one ampere at a breakdown goes to zero at t . voltage of 1300 V, and using Equation (2) the energy 2 By solving the loop equation at the point in time when S absorbed by the MUR8100E is approximately 20 mjoules. 1 is opened; and calculating the energy that is transferred to Although it is not recommended to design for this the diode it can be shown that the total energy transferred is condition, the new “E’’ series provides added protection equal to the energy stored in the inductor plus a finite amount against those unforeseen transient viruses that can produce of energy from the V power supply while the diode is in unexplained random failures in unfriendly environments. DD breakdown (from t to t ) minus any losses due to finite 1 2 EQUATION (1): (cid:4) (cid:5) CCHH12 50500VmV A 20(cid:2)s 953 V VERT ICLHANNEL 2: W (cid:3) 1LI2 BVDUT 0.5 AMPS/DIV. AVAL 2 LPK BV –V DUT DD CHANNEL 1: VDUT EQUATION (2): 500 VOLTS/DIV. W (cid:3) 1LI2 AVAL 2 LPK TIME BASE: 20 (cid:3)s/DIV. 1 ACQUISITIONS 217:33 HRS SAVEREF SOURCE STACK CH1 CH2 REF REF Figure 8. Current−Voltage Waveforms http://onsemi.com 4

MUR480EG, MUR4100EG NOTE 2 − AMBIENT MOUNTING DATA Data shown for thermal resistance junction−to−ambient (R(cid:2)JA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR R(cid:2)JA IN STILL AIR Mounting Lead Length, L (IN) Method 1/8 1/4 1/2 3/4 Units 1 50 51 53 55 °C/W 2 R(cid:2)JA 58 59 61 63 °C/W 3 28 °C/W MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small. L L ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ MOUNTING METHOD 2 Vector Push−In Terminals T−28 ÉÉÉÉLÉÉÉÉÉLÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ MOUNTING METHOD 3 P.C. Board with 1−1/2″x1−1/2″Copper Surface ÉÉ ÉÉ L = 1/2″ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ Board Ground Plane ÉÉ http://onsemi.com 5

MUR480EG, MUR4100EG PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 (DO−201AD) ISSUE G K A NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI D Y14.5M, 1982. 1 2 2.CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.287 0.374 7.30 9.50 B B 0.189 0.209 4.80 5.30 K D 0.047 0.051 1.20 1.30 K 1.000 --- 25.40 --- STYLE 1: PIN 1.CATHODE (POLARITY BAND) 2.ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MUR480E/D 6

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