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MUR1620CTRG产品简介:
ICGOO电子元器件商城为您提供MUR1620CTRG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MUR1620CTRG价格参考¥6.30-¥6.30。ON SemiconductorMUR1620CTRG封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 Pair Common Anode Standard 200V 8A Through Hole TO-220-3。您可以下载MUR1620CTRG参考资料、Datasheet数据手册功能说明书,资料中有MUR1620CTRG 详细功能的应用电路图电压和使用方法及教程。
MUR1620CTRG是由ON Semiconductor(安森美半导体)生产的一款二极管整流器阵列,主要用于电力电子应用中。这款器件具有多个整流二极管集成在一个封装内,能够有效地处理高电流和电压的应用场景。 应用场景: 1. 电源管理: MUR1620CTRG常用于开关电源(SMPS)和直流-直流转换器中,作为高效的整流元件。它能够在高频条件下提供低反向恢复时间,减少能量损耗,提高电源效率。其低正向压降特性也有助于降低热耗散,延长设备寿命。 2. 电机驱动: 在电机驱动电路中,MUR1620CTRG可以用于整流桥或续流二极管,确保电流的单向流动,防止反向电流对电路造成损害。其快速响应特性和高可靠性使其非常适合应用于工业自动化、家电和电动工具等领域。 3. 光伏系统: 在太阳能光伏系统中,MUR1620CTRG可用于最大功率点跟踪(MPPT)控制器和逆变器中,帮助将太阳能板产生的直流电转换为交流电,并传输到电网或负载。其高效整流性能有助于提高系统的整体效率。 4. 电池充电与保护: 该器件也可用于电池充电电路中,作为防反接二极管,防止电池过充或反向电流损坏充电器。其低功耗特性有助于延长电池寿命,并确保充电过程的安全性。 5. 汽车电子: 在汽车电子系统中,MUR1620CTRG可用于发电机整流、车载充电器和其他高压直流应用。其高温稳定性和抗干扰能力使其适合在恶劣环境下工作,如发动机舱内的高温环境。 6. 通信设备: 在通信基站和服务器等高性能设备中,MUR1620CTRG可用于电源模块中的整流部分,确保稳定的电力供应,支持长时间不间断运行。 总之,MUR1620CTRG凭借其高效、可靠和紧凑的设计,在各种电力电子应用中表现出色,广泛应用于工业、消费电子、汽车和通信等领域。
参数 | 数值 |
产品目录 | |
描述 | DIODE ARRAY 200V 8A TO220AB整流器 200V 16A UltraFast |
产品分类 | 二极管,整流器 - 阵列分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,ON Semiconductor MUR1620CTRGSWITCHMODE™ |
数据手册 | |
产品型号 | MUR1620CTRG |
PCN设计/规格 | |
不同If时的电压-正向(Vf) | 1.2V @ 8A |
不同 Vr时的电流-反向漏电流 | 5µA @ 200V |
二极管类型 | 标准 |
二极管配置 | 1 对共阳极 |
产品 | Ultra Fast Recovery Rectifiers |
产品目录页面 | |
产品种类 | 整流器 |
供应商器件封装 | TO-220AB |
其它名称 | MUR1620CTRGOS |
包装 | 管件 |
反向恢复时间(trr) | 85ns |
反向电压 | 200 V |
反向电流IR | 5 uA |
商标 | ON Semiconductor |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
工厂包装数量 | 50 |
恢复时间 | 85 ns |
最大工作温度 | + 175 C |
最大浪涌电流 | 100 A |
最小工作温度 | - 65 C |
标准包装 | 50 |
正向电压下降 | 1.2 V at 8 A |
正向连续电流 | 16 A |
热阻 | 3°C/W Jc |
电压-DC反向(Vr)(最大值) | 200V |
电流-平均整流(Io)(每二极管) | 8A |
系列 | MUR1620CTR |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Dual Common Anode |
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G Switch Mode Power Rectifier www.onsemi.com These state−of−the−art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, ULTRAFAST RECTIFIER used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full−wave bridge. 16 AMPERES, 200 VOLTS Features • Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package) • Ultrafast 35 Nanosecond Reverse Recovery Times • Exhibits Soft Recovery Characteristics • High Temperature Glass Passivated Junction • Low Leakage Specified @ 150°C Case Temperature • Current Derating @ Both Case and Ambient Temperatures • Epoxy Meets UL 94 V−0 @ 0.125 in • Complement to MUR1620CT and MURB1620CT Common Cathode TO−220AB D2PAK Device CASE 221A CASE 418AJ • STYLE 7 ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 16,000 V) 1 • 2, 4 NRVU Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • MARKING DIAGRAMS These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded AYWW • Weight: MUR1620CTR: 1.9 Grams (Approximately) AYWW U1620RG MURB1620CTR: 1.7 Grams (Approximately) U1620RG KAK • KAK Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220AB D2PAK U1620R = Device Code KAK = Diode Polarity A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 − Rev. 9 MUR1620CTR/D
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A (Rated VR, TC = 160°C) Per Leg 8.0 Per Total Device 16 Peak Repetitive Surge Current IFM A (Rated VR, Square Wave, 20 kHz, TC = 140°C) Per Diode 16 Non−Repetitive Peak Surge Current IFSM 100 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 2.0 °C/W Thermal Resistance, Junction−to−Ambient (D2PAK) R(cid:2)JA 45 °C/W ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 8.0 Amps, TC = 25°C) 1.2 (iF = 8.0 Amps, TC = 150°C) 1.1 Maximum Instantaneous Reverse Current (Note 1) iR (cid:3)A (Rated dc Voltage, TC = 25°C) 5.0 (Rated dc Voltage, TC = 150°C) 500 Maximum Reverse Recovery Time trr ns (IF = 1.0 Amp, di/dt = 50 Amps/(cid:3)s) 85 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. ORDERING INFORMATION Device Package Shipping† MUR1620CTRG TO−220 50 Units / Rail (Pb−Free) MURB1620CTRG D2PAK−3 50 Units / Rail (Pb−Free) MURB1620CTRT4G D2PAK−3 800 / Tape & Reel (Pb−Free) NRVUB1620CTRT4G D2PAK−3 800 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G 100 1000 500 70 A) 200 TJ = 175°C 50 (cid:3)NT ( 15000 150°C RE 20 100°C R 10 30 CU 5 * The curves shown are typical for the highest E 2 voltage device in the voltage grouping. Typical NT (AMPS) 2100 , REVERSR 000...1521 rbseuevf feeicsrsiteiemn ctaluyte rbrdee nflorto wfmo rr a tlhoteewdse eVr sRvao.mltaeg ceu srveelesc itfi oVnRs icsan RE I00..0052 25°C R U 7.0 0.01 D C TJ = 175°C 0 20 40 60 80 100 120 140 160 180 200 AR 5.0 VR, REVERSE VOLTAGE (VOLTS) W R 150°C Figure 2. Typical Reverse Current* (Per Leg) O F 3.0 S 100°C U EO 2.0 S) TAN 25°C AMP 16 AN 1.0 T ( 14 ST EN RATED VR APPLIED i, INF 00..57 D CURR 1102 R(cid:2)JC = 2°C/W R A8.0 W dc R 0.3 O6.0 SQUARE WAVE F E 0.2 G4.0 A R E2.0 V A 0.1 , V) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 A 140 150 160 170 180 F( vF, INSTANTANEOUS VOLTAGE (VOLTS) I TC, CASE TEMPERATURE (°C) Figure 1. Typical Forward Voltage (Per Leg) Figure 3. Current Derating, Case (Per Leg) TS) 16 TJ = 175°C T A 14 W N ( 12 O ATI 10 SQUARE SIP WAVE S 8.0 DI dc R E 6.0 W O P 4.0 E G 2.0 A R E 0 V A 0 2.0 4.0 6.0 8.0 10 12 14 16 , AV) IF(AV), AVERAGE FORWARD CURRENT (AMPS) F( P Figure 4. Power Dissipation (Per Leg) www.onsemi.com 3
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G 1.0 E C D = 0.5 AN 0.5 T S SI L RED) 0.2 0.1 AE HERMMALIZ 0.1 0.01 0.05 P(pk) ZD(cid:2) CJCU(tR) =V Er(St) ARP(cid:2)JPCLY FOR POWER TR0.05 ANSIENT (NO0.02 SINGLE PULSE DUTY CYCtL1Et2, D = t1/t2 PRTJUE(pALkSD) E− T TTIMCR EA= I ANPT( pS TkH)1 ZO(cid:2)WJCN(t) R T 0.01 r(t), 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t, TIME (ms) Figure 5. Thermal Response 100 50% Duty Cycle 20% 10 10% 5% 2% W) 1 C/ 1% ° R(t) ( 0.1 Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 6. Thermal Response, Junction−to−Ambient 1000 900 800 F) 700 p E ( 600 C N A T 500 CI A P A 400 C C, 300 200 100 0 0.1 0.2 0.3 0.5 0.7 1.0 0.2 0.3 0.5 0.7 10 20 30 50 70 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance (Per Leg) www.onsemi.com 4
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE B B SEATING PLANE NOTES: E A A 1. DY1IM4.E5NMS, I1O9N9I4N.G AND TOLERANCING PER ASME 2. CONTROLLING DIMENSION: INCHES. E2 c2 L1 3. CHAMFER OPTIONAL NOTE 3 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD A FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED L1 D1 AT THE OUTERMOST EXTREMES OF THE PLAS- TIC BODY AT DATUM H. D 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN H DIMENSIONS E, L1, D1 AND E1. DETAIL C E1 6. OPTIONAL MOLD FEATURE 0.10 M B AM INCHES MILLIMETERS DIM MIN MAX MIN MAX L2 A 0.160 0.190 4.06 4.83 A A1 0.000 0.010 0.00 0.25 e c VIEW A−A b 0.020 0.039 0.51 0.99 NOTE 6 c 0.012 0.029 0.30 0.74 2Xb SIDE VIEW c2 0.045 0.065 1.14 1.65 D 0.330 0.380 8.38 9.65 TOP VIEW 0.10 M B AM GAUGE H D1 0.260 −−−− 6.60 −−−− PLANE E 0.380 0.420 9.65 10.67 L3 E1 0.245 −−−− 6.22 −−−− e 0.100 BSC 2.54 BSC H 0.575 0.625 14.60 15.88 L 0.070 0.110 1.78 2.79 L1 −−−− 0.066 −−−− 1.68 L A1 B SEATING LL32 −−0−.0−10 B0S.0C70 −−0−.−25 BS1C.78 PLANE M 0° 8° 0° 8° M DETAIL C RECOMMENDED VIEW A−A SOLDERING FOOTPRINT* OPTIONAL CONSTRUCTIONS 0.436 0.366 0.653 2X 0.169 2X 0.063 0.100 PITCH DIMENSIONS: INCHES *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 7: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com MUR1620CTR/D 6
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MUR1620CTRG MURB1620CTRG MURB1620CTRT4G NRVUB1620CTRT4G