ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 单 > MUH1PB-M3/89A
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MUH1PB-M3/89A产品简介:
ICGOO电子元器件商城为您提供MUH1PB-M3/89A由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MUH1PB-M3/89A价格参考¥0.53-¥0.53。VishayMUH1PB-M3/89A封装/规格:二极管 - 整流器 - 单, 标准 表面贴装 二极管 100V 1A MicroSMP。您可以下载MUH1PB-M3/89A参考资料、Datasheet数据手册功能说明书,资料中有MUH1PB-M3/89A 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE UFAST 100V 1A MICROSMP整流器 1.0 Amp 100 Volt 10 Amp IFSM |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | Vishay SemiconductorsVishay Semiconductor Diodes Division |
产品手册 | |
产品图片 | |
rohs | RoHS 合规性豁免无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,Vishay Semiconductors MUH1PB-M3/89AeSMP™ |
数据手册 | |
产品型号 | MUH1PB-M3/89AMUH1PB-M3/89A |
不同If时的电压-正向(Vf) | 1.05V @ 1A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 1µA @ 100V |
二极管类型 | 标准 |
产品 | Ultra Fast Recovery Rectifiers |
产品种类 | 整流器 |
供应商器件封装 | MicroSMP |
包装 | 带卷 (TR) |
反向恢复时间(trr) | 40ns |
反向电压 | 100 V |
反向电流IR | 1 uA |
商标 | Vishay Semiconductors |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | MicroSMP |
封装/箱体 | MicroSMP-2 |
工作温度-结 | -55°C ~ 175°C |
工厂包装数量 | 4500 |
恢复时间 | 29 ns |
最大工作温度 | + 175 C |
最大浪涌电流 | 10 A |
最小工作温度 | - 55 C |
标准包装 | 4,500 |
正向电压下降 | 0.82 V |
正向连续电流 | 1 A |
电压-DC反向(Vr)(最大值) | 100V |
电流-平均整流(Io) | 1A |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
MUH1PB, MUH1PC www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifiers FEATURES eSMP® Series • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low power losses • Ultrafast recovery times for high frequency Top View Bottom View • Meets MSL level 1, per J-STD-020, MicroSMP (DO-219AD) LF maximum peak of 260 °C • AEC-Q101 qualified Anode Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for Models ultrafast switching speeds AC/AC and DC/DC converters. Available MECHANICAL DATA PRIMARY CHARACTERISTICS Case: MicroSMP (DO-219AD) I 1.0 A Molding compound meets UL 94 V-0 flammability rating F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 100 V, 150 V RRM commercial grade I 10 A FSM Base P/NHM3 - halogen-free, RoHS-compliant, and trr 25 ns automotive grade VF at IF = 1.0 A 0.82 V Terminals: matte tin plated leads, solderable per I 1 μA J-STD-002 and JESD 22-B102 R M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix T max. 175 °C J meets JESD 201 class 2 whisker test Package MicroSMP (DO-219AD) Polarity: color band denotes the cathode end Circuit configuration Single MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL MUH1PB MUH1PC UNIT Device marking code HB HC Maximum repetitive peak reverse voltage V 100 150 V RRM Maximum average forward rectified current (fig. 1) I 1.0 A F(AV) Peak forward surge current 10 ms single half sine-wave I 10 A superimposed on rated load FSM Operating junction and storage temperature range T , T -55 to +175 °C J STG Revision: 15-Aug-2018 1 Document Number: 89124 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MUH1PB, MUH1PC www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.5 A 0.90 - F T = 25 °C A Maximum instantaneous IF = 1.0 A V (1) 1.0 1.05 V forward voltage I = 0.5 A F 0.72 - F T = 125 °C A I = 1.0 A 0.82 0.90 F T = 25 °C - 1.0 Maximum reverse current Rated V A I (2) μA R R T = 125 °C 3.0 15 A Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, 19 25 I = 0.25 A rr T = 25 °C t ns A rr I = 1.0 A, dI/dt = 50 A/μs, Typical reverse recovery time F 29 40 V = 30 V, I = 0.1 I R rr RM Typical softness factor (t /t ) S 0.5 - b a I = 1.0 A, dI/dt = 200 A/μs, Typical reverse recovery current F T = 125 °C I 3.4 4.6 A V = 200 V A RM R Typical stored charge Q 45 - nC rr Typical junction capacitance 4.0 V, 1 MHz C 10 - pF J Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL MUH1PB MUH1PC MUH1PD UNIT R (1) 166 JA Typical thermal resistance °C/W R (1) 40 JM Note (1) Free air, mounted on recommended copper pad area. Thermal resistance R - from junction to ambient, R - and junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MUH1PC-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel MUH1PCHM3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 1.2 1.2 )A t (ne 1.0 1.0 D = 0.5D = 0.8 rur W) D = 0.3 Cd efictieR 00..68 wer Loss ( 00..68 D = 0.2 D = 1.0 d Po ra e D = 0.1 T wro Feagre 00..24 at the CaTtMh oMdeea Bsuanredd Terminal Averag 00..24 D = tp/T tp v A 0 0 95 105 115 125 135 145 155 165 175 0 0.2 0.4 0.6 0.8 1.0 1.2 Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 15-Aug-2018 2 Document Number: 89124 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MUH1PB, MUH1PC www.vishay.com Vishay General Semiconductor 100 100 A) TA = 175 °C fT =J 1=. 02 5M °HCz nt ( )F Vsig = 50 mVp-p urre 10 TA = 150 °C p( e C c us Forward 1 TA = 125 °C naticapaC n 10 o o ane 0.1 TA = 100 °C itcn ant uJ st n I T = 25 °C A 0.01 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2.0 2.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 A) TA = 175 °C W) Junction to Ambient ent (µ 10 e (°C/ urr TA = 150 °C nc C a 100 e 1 TA = 125 °C ed s p er m us Rev 0.1 TA = 100 °C ermal I o h 10 e T an nt Instant 0.01 TA = 25 °C Transie 0.001 1 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.030 (0.75) Cathode Band 0.043 (1.10) 0.022 (0.55) 0.055 (1.40) 0.039 (0.98) 0.030 (0.75) 0.047 (1.20) 0.031 (0.78) 0.022 (0.55) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) Mounting Pad Layout 0.079 0.032 (2.00) (0.80) 0.029 (0.73) 0.043 0.032 0.025 (0.63) (1.10) (0.80) 0.011 (0.27) 0.005 (0.12) 0.020 (0.50) Revision: 15-Aug-2018 3 Document Number: 89124 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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