MSS1P5, MSS1P6 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifiers FEATURES eSMP® Series • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Top View Bottom View • AEC-Q101 qualified available MicroSMP (DO-219AD) - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of complianc e Anode Cathode please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3DDD 333D For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protectio n 3D Models applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 1.0 A Case: MicroSMP (DO-219AD) F(AV) Molding compound meets UL 94 V-0 flammability ratin g V 50 V, 60 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and IFSM 25 A commercial grade V at I = 1.0 A 0.52 V Base P/NHM3_X - halogen-free, RoHS-compliant, and F F AEC-Q101 qualified T max. 150 °C J (“_X” denotes revision code e.g. A, B,...) Package MicroSMP (DO-219AD) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL MSS1P5 MSS1P6 UNIT Device marking code 15 16 Maximum repetitive peak reverse voltage V 50 60 V RRM Maximum average forward rectified current (fig. 1) I 1.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 25 A superimposed on rated load FSM Operating junction and storage temperature range T , T -55 to +150 °C J STG Revision: 17-Dec-2019 1 Document Number: 89018 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MSS1P5, MSS1P6 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.5 A 0.45 - F T = 25 °C J Maximum instantaneous IF = 1.0 A V (1) 0.56 0.68 V forward voltage I = 0.5 A F 0.40 - F T = 125 °C J I = 1.0 A 0.52 0.60 F T = 25 °C 20 150 μA Maximum reverse current Rated V J I (2) R R T = 125 °C 7.0 12 mA J Typical junction capacitance 4.0 V, 1 MHz C 40 - pF J Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL MSS1P5 MSS1P6 UNIT R (1) 125 JA Typical thermal resistance R (1) 30 °C/W JL R (1) 40 JC Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R is measured JL at the terminal of cathode band. R is measured at the top center of the body JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSS1P6-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel MSS1P6HM3_A/H (1) 0.006 H 4500 7" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25°C unless otherwise noted) A 1.2 0.7 A) Resistive or Inductive Load D = 0.3 D = 0.5 D = 0.8 nt ( 1.0 0.6 D = 0.2 urre W) d C 0.8 ss ( 0.5 D = 0.1 D = 1.0 e o d Rectifi 0.6 Power L 00..43 erage Forwar 00..24 aTtL tMhee aCsautrheodde Band Terminal Average 00..21 D = tp/T Ttp v A 0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 17-Dec-2019 2 Document Number: 89018 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MSS1P5, MSS1P6 www.vishay.com Vishay General Semiconductor 10 1000 A) nt ( TJ= 150°C Curre 1 T = 125°C )Fp( e d J cn war atic or ap 100 F a us 0.1 C n ntaneo TJ= 25°C oitcnuJ a st TJ= -40°C n I 0.01 10 0 0.10.20.30.40.50.60.70.80.91.01.11.21.31.41.5 0.1 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance Axis Title 1000 10000 1000 A) )W Junction to Ambient ent (m 10100 TJ= 150 °C /C°( e e Curr 1 TJ= 125 °C 1000 cnade 100 d lineRevers 0.00.11 TJ= 25 °C 1st line pmI lam 2nous 0.001 100 reh 10 e T an 0.0001 tn Instant0.00001 TJ= -40 °C eisnarT 0.000001 10 1 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.030 (0.75) Cathode Band 0.043 (1.10) 0.022 (0.55) 0.055 (1.40) 0.039 (0.98) 0.030 (0.75) 0.047 (1.20) 0.031 (0.78) 0.022 (0.55) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) Mounting Pad Layout 0.079 0.032 (2.00) (0.80) 0.029 (0.73) 0.043 0.032 0.025 (0.63) (1.10) (0.80) 0.011 (0.27) 0.005 (0.12) 0.020 (0.50) Revision: 17-Dec-2019 3 Document Number: 89018 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: MSS1P5-E3/89A MSS1P6-E3/89A MSS1P5-M3/89A MSS1P6-M3/89A MSS1P6HM3/89A MSS1P5HM3_A/H MSS1P6HM3J_A/H MSS1P6HM3_A/H MSS1P5HM3/89A MSS1P6HM3J/89A