ICGOO在线商城 > 射频/IF 和 RFID > RF 放大器 > MSA-2111-BLKG
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MSA-2111-BLKG产品简介:
ICGOO电子元器件商城为您提供MSA-2111-BLKG由Avago Technologies设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MSA-2111-BLKG价格参考。Avago TechnologiesMSA-2111-BLKG封装/规格:RF 放大器, 射频放大器 IC 0Hz ~ 4GHz SOT-143-4。您可以下载MSA-2111-BLKG参考资料、Datasheet数据手册功能说明书,资料中有MSA-2111-BLKG 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | AMP MMIC SI BIPOLAR SOT-143射频放大器 4.3 SV 16.5 dB |
产品分类 | |
品牌 | Avago Technologies US Inc. |
产品手册 | http://www.avagotech.com/docs/AV02-0792EN |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | RF集成电路,射频放大器,Avago Technologies MSA-2111-BLKG- |
数据手册 | http://www.avagotech.com/docs/AV02-0792EN |
P1dB | 10 dBm |
产品型号 | MSA-2111-BLKG |
RF类型 | - |
产品种类 | 射频放大器 |
供应商器件封装 | SOT-143-4 |
其它名称 | 516-1970 |
功率增益类型 | 17.5 dB |
包装 | 散装 |
商标 | Avago Technologies |
噪声系数 | 3.3 dB |
增益 | 16dB ~ 17.5dB |
安装风格 | SMD/SMT |
封装 | Bulk |
封装/外壳 | TO-253-4,TO-253AA |
封装/箱体 | SOT-143-4 |
工作电源电压 | 3.6 V |
工作频率 | 0 Hz to 4 GHz |
工厂包装数量 | 100 |
最大功率耗散 | 125 mW |
最大工作温度 | + 150 C |
标准包装 | 100 |
测试频率 | 900 MHz |
电压-电源 | 2.9 V ~ 4.3 V |
电流-电源 | 40mA |
电源电流 | 29 mA |
类型 | MMIC |
输出截获点 | 20 dBm |
通道数量 | 1 Channel |
频率 | 0Hz ~ 4GHz |
Agilent MSA-2111 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50Ω Gain Block • Medium Power: 10 dBm at 900 MHz • High Gain: Description SOT-143 Package 16.5 dB Typical at 900 MHz The MSA-2111 is a low cost silicon • Low Noise Figure: bipolar Monolithic Microwave 3.3dB Typical at 900 MHz Integrated Circuit (MMIC) housed • Low Cost Surface Mount in a surface mount plastic Plastic Package SOT-143 package. This MMIC is • Tape-and-Reel Packaging designed for use as a general Option Available purpose 50 Ω gain block. Typical applications include narrow and • Lead-free Option Available broad band IF and RF amplifiers in commercial and industrial applications. Typical Biasing Configuration The MSA-series is fabricated using Rbias V > 5 V CC Agilent’s 10 GHz fT, 25GHz fMAX, silicon bipolar MMIC process RFC (Optional) which uses nitride self-alignment, ion implantation, and gold metalli- Cblock Cblock zation to achieve excellent IN MSA OUT performance, uniformity and Vd = 3.6 V reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-2111 Absolute Maximum Ratings Parameter Absolute Maximum[1] Thermal Resistance[2]: Device Current 40 mA θ = 505°C/W jc Power Dissipation[2,3] 125 mW RF Input Power +13 dBm Junction Temperature 150°C Storage Temperature –65°C to 150°C Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T = 25°C. CASE 3. Derate at 2.0 mW/°C for T > 85°C. C Electrical Specifications[1], T = 25°C A Symbol Parameters and Test Conditions: I = 29 mA, Z = 50 Ω Units Min. Typ. Max. d O GP Power Gain (|S21|2) f = 900 MHz dB 16.0 17.5 ∆GP Gain Flatness f = 0.1 to 0.3 GHz dB ±0.5 f3 dB 3 dB Bandwidth GHz 0.5 Input VSWR f = 0.1 to 2.5 GHz 1.8:1 VSWR Output VSWR f = 0.1 to 2.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 900 MHz dB 3.3 P1 dB Output Power at 1 dB Gain Compression f = 900 MHz dBm 10 IP3 Third Order Intercept Point f = 900 MHz dBm 20 tD Group Delay f = 900 MHz psec 158 Vd Device Voltage V 2.9 3.6 4.3 dV/dT Device Voltage Temperature Coefficient mV/°C –8.0 Notes: 1. The recommended operating current range for this device is 12 to 35 mA. Typical gain performance as a function of current is on the following page. Ordering Information Part Numbers No. of Devices Comments MSA-2111-BLK 100 Bulk MSA-2111-BLKG 100 Bulk MSA-2111-TR1 3000 7" Reel MSA-2111-TR1G 3000 7" Reel MSA-2111-TR2 10000 13" Reel MSA-2111-TR2G 10000 13" Reel Note: Order part number with a “G” suffix if lead-free option is desired.
3 MSA-2111 Typical Scattering Parameters (Z = 50 Ω, T = 25°C, I = 29 mA) O A d S S S S Freq. 11 21 12 22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 .28 171 23.0 14.1 167 –26.0 .050 9 .27 177 1.03 0.2 .26 163 22.5 13.4 156 –25.5 .053 18 .27 175 1.03 0.3 .24 156 21.9 12.5 145 –24.9 .057 25 .26 173 1.03 0.4 .21 152 21.2 11.5 136 –24.0 .063 30 .26 171 1.03 0.5 .18 149 20.5 10.6 128 –23.4 .068 35 .24 170 1.03 0.6 .15 148 19.7 9.7 120 –22.6 .074 38 .24 169 1.03 0.7 .13 148 19.0 8.9 114 –21.8 .081 40 .22 169 1.04 0.8 .11 152 18.3 8.2 108 –21.1 .088 42 .21 169 1.04 0.9 .09 158 17.6 7.6 102 –20.4 .095 43 .20 168 1.04 1.0 .07 169 16.9 7.0 98 –19.9 .101 44 .19 169 1.05 1.5 .08 –123 14.0 5.0 79 –17.3 .136 45 .10 179 1.06 2.0 .11 –124 11.8 3.9 63 –15.5 .167 42 .06 –147 1.08 2.5 .15 –167 10.1 3.2 56 –14.3 .193 43 .06 –177 1.10 3.0 .27 158 8.3 2.6 43 –13.5 .211 38 .12 149 1.13 3.5 .38 145 6.8 2.2 32 –13.1 .222 34 .16 145 1.14 4.0 .46 135 5.6 1.9 21 –12.6 .234 30 .17 144 1.14 Typical Performance, T = 25°C A (unless otherwise noted) 25 25 14 22 0.1 GHz 20 0.5 GHz 12 19 Gain Flat to DC 0.9 GHz B) 16 B) 15 Bm) G (dP 13 (dGP 10 2.0 GHz P (d1 dB10 10 8 5 7 4 0 6 0.1 0.3 0.5 1.0 3.0 6.0 10 15 20 25 30 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) Id (mA) FREQUENCY (GHz) Figure 1. Power Gain vs. Frequency, Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Id = 29 mA. Compression vs. Frequency, I = 29 mA. d 4.0 3.5 B) d F ( N 3.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) Figure 4. Noise Figure vs. Frequency, I = 29 mA. d
SOT-143 Package Dimensions e2 e1 B1 E XXX E1 L e B C DIMENSIONS (mm) D SYMBOL MIN. MAX. A 0.79 1.097 A1 0.013 0.10 A B 0.36 0.54 B1 0.76 0.92 C 0.086 0.152 A1 D 2.80 3.06 e E1 1.20 1.40 e 0.89 1.02 e1 1.78 2.04 Notes: e2 0.45 0.60 XXX-package marking E 2.10 2.65 Drawings are not to scale L 0.45 0.69 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. Obsoletes 5965-9663E April 5, 2005 5989-2759EN