Freescale Semiconductor DocumentNumber:MRFG35010AN Technical Data Rev.4,8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designedfor WLL/MMDS/BWAor UMTSdriver applications.Characterized from500to5000MHz.DeviceisunmatchedandissuitableforuseinClassAB customerpremiseequipment(CPE)applications.  TypicalSingle--CarrierW--CDMAPerformance:VDD=12Vdc,IDQ=130mA, 3.84MHzChannelBandwidth,InputSignalPAR=8.5dB@0.01% 500--5000MHz,9W,12V ProbabilityonCCDF. POWERFET GaAspHEMT Frequency Pout Gps ACPR D IRL (MHz) (W) (dB) (dBc) (%) (dB) 750 1 14.5 --44.0 24.0 --15 2140 1 13.0 --43.0 25.0 --14 2650 1 11.5 --43.0 30.0 --15 Features  9WattsP1dB@3550MHz,CW  ExcellentPhaseLinearityandGroupDelayCharacteristics  HighEfficiencyandHighLinearity PLD--1.5 PLASTIC  InTapeandReel.T1Suffix=1000Units,16mmTapeWidth,13--inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage VDSS 15 Vdc Gate--SourceVoltage VGS --5 Vdc RFInputPower Pin 33 dBm StorageTemperatureRange Tstg --65to+150 C ChannelTemperature(1) Tch 175 C Table2.ThermalCharacteristics Characteristic Symbol Value(2) Unit ThermalResistance,JunctiontoCase RJC 6.5 C/W CaseTemperature77C,1WCW Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C 1. Forreliableoperation,theoperatingchanneltemperatureshouldnotexceed150C. 2. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. FreescaleSemiconductor,Inc.,2006,2008--2009,2012--2013.Allrightsreserved. MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 1

Table5.ElectricalCharacteristics (TA=25Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit SaturatedDrainCurrent IDSS — 2.9 — Adc (VDS=3.5Vdc,VGS=0Vdc) OffStateLeakageCurrent IGSS — <1 100 Adc (VGS=--0.4Vdc,VDS=0Vdc) OffStateDrainCurrent IDSO — 0.1 1 mAdc (VDS=12Vdc,VGS=--2.2Vdc) OffStateCurrent IDSX — 2 15 mAdc (VDS=28.5Vdc,VGS=--2.5Vdc) Gate--SourceCut--offVoltage VGS(th) --1.2 --1.0 --0.7 Vdc (VDS=3.5Vdc,IDS=15mA) QuiescentGateVoltage VGS(Q) --1.2 --0.95 --0.7 Vdc (VDS=12Vdc,IDQ=180mA) FunctionalTests(InFreescaleTestFixture,50ohmsystem)VDD=12Vdc,IDQ=130mA,Pout=1WAvg.,f=3550MHz,Single--Carrier W--CDMA,3.84MHzChannelBandwidthCarrier.ACPRmeasuredin3.84MHzChannelBandwidth@5MHzOffset. PAR=8.5dB@0.01%ProbabilityonCCDF. PowerGain Gps 9 10 — dB DrainEfficiency ηD 23 25 — % AdjacentChannelPowerRatio ACPR — --43 --40 dBc TypicalRFPerformance(InFreescaleTestFixture,50hmsystem)VDD=12Vdc,IDQ=130mA,f=3550MHz OutputPower,1dBCompressionPoint,CW P1dB — 9 — W MRFG35010ANT1 RFDeviceData 2 FreescaleSemiconductor,Inc.

C10 C9 C14 C13 C11 C12 C8 C15 C7 C16 C6 C17 C5 C18 C19 C4 R1 C3 C20 C1 C2 C22 C21 MRFG35010AN Rev.6 3500MHz--3600MHz Figure1.MRFG35010ANT1TestCircuitComponentLayout—3550MHz Table6.MRFG35010ANT1TestCircuitComponentDesignationsandValues—3550MHz Part Description PartNumber Manufacturer C1,C21,C22 0.5pFChipCapacitors 08051J0R5BBT AVX C2 0.2pFChipCapacitor 06035J0R2BBT AVX C3 0.5pFChipCapacitor 06035J0R5BBT AVX C4,C19,C20 6.8pFChipCapacitors 08051J6R8BBT AVX C5,C18 10pFChipCapacitors ATC100A100JP150XT ATC C6,C17 100pFChipCapacitors ATC100A101JP150XT ATC C7,C16 100pFChipCapacitors ATC100B101JP500XT ATC C8,C15 1000pFChipCapacitors ATC100B102JP50XT ATC C9,C14 0.1FChipCapacitors CDR33BX104AKWS Kemet C10,C13 39KpFChipCapacitors ATC200B393KP50XT ATC C11,C12 10F,50VChipCapacitors GRM55DR61H106KA88B Murata R1 50ChipResistor P51ETR--ND Newark PCB 0.020,r=3.5 RO4350B Rogers MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 3

VGG VDD C11 C10 C9 C8 C7 C6 C5 C18 C17 C16 C15 C14 C13 C12 C4 C19 Z9 Z12 R1 RF RF INPUT OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 Z17 C3 C20 C1 C2 C22 C21 Figure2.MRFG35010ANT1TestCircuitSchematic—3550MHz Table7.MRFG35010ANT1TestCircuitMicrostrips—3550MHz Microstrip Description Microstrip Description Z1 0.045x0.689Microstrip Z9 0.025x0.485Microstrip Z2 0.045x0.089Microstrip Z11 0.400x0.215Microstrip Z3 0.020x0.360Microstrip Z12 0.025x0.497Microstrip Z4 0.045x0.029Microstrip Z13 0.025x0.271Microstrip Z5 0.045x0.061Microstrip Z14 0.025x0.363Microstrip Z6 0.045x0.055Microstrip Z15 0.025x0.041Microstrip Z7 0.300x0.125Microstrip Z16 0.045x0.050Microstrip Z8,Z10 0.146x0.070Microstrip Z17 0.045x0.467Microstrip MRFG35010ANT1 RFDeviceData 4 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS—3550MHz 12 50 B) 10 40 (d %) GAIN VDD=12Vdc,IDQ=130mA,f=3550MHz GT CY( CER 8 S3.i8n4glMe--HCzaCrrhiearnWne--lCBDaMndAwidth 30 CIEN RANSDU 6 SL==00..884795----114351..80__ 20 AINEFFI T R G,T 4 10 ,DD D 2 0 10 15 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure3.Single--CarrierW--CDMAPowerGain andDrainEfficiencyversusOutputPower c) --10 --10 B (d VDD=12Vdc,IDQ=130mA,f=3550MHz O Single--CarrierW--CDMA,3.84MHzChannelBandwidth RATI --20 S=0.875--131.0_,L=0.849--145.8_ --15 dB) R S( WE IRL OS O L P --30 --20 N L R E U N T N E A R H --40 --25 T C U T P N N E I DJAC --50 ACPR --30 IRL, A R, P C --60 --35 A 15 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure4.Single--CarrierW--CDMAACPRand InputReturnLossversusOutputPower NOTE:Alldataisreferencedtopackageleadinterface.SandLaretheimpedancespresentedtotheDUT. Alldataisgeneratedfromloadpull,notfromthetestcircuitshown. MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 5

TYPICALCHARACTERISTICS—3550MHz 14 60 VDD=12Vdc,IDQ=130mA,f=3550MHz Single--CarrierW--CDMA,3.84MHzChannelBandwidth 12 50 InputSignalPAR=8.5dB@0.01% %) B) Probability(CCDF) Y( RGAIN(d 108 Gps 3400 FFICIENC E E W N G,POps 6 20 ,DRAID  4 D 10 2 0 20 24 28 32 36 40 Pout,OUTPUTPOWER(dBm) Figure5.Single--CarrierW--CDMAPowerGain andDrainEfficiencyversusOutputPower c) --10 --5 B (d VDD=12Vdc,IDQ=140mA,f=3550MHz O Single--CarrierW--CDMA,3.84MHzChannelBandwidth RATI --20 InputSignalPAR=8.5dB@0.01% --10 dB) R Probability(CCDF) S( E S W O O L P --30 --15 N EL IRL UR N T N E A R H --40 --20 T C U T P N N E I DJAC --50 ACPR --25 IRL, A R, P C --60 --30 A 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure6.Single--CarrierW--CDMAACPRand InputReturnLossversusOutputPower NOTE:Dataisgeneratedfromthetestcircuitshown. MRFG35010ANT1 RFDeviceData 6 FreescaleSemiconductor,Inc.

Zo=25 Zload f=3550MHz Zsource f=3550MHz VDD=12Vdc,IDQ=130mA,Pout=1WAvg. f Zsource Zload MHz   3550 4.0--j22.6 4.5--j15.3 Zsource = Testcircuitimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasured fromdraintoground. Input Device Output Matching Under Matching Network Test Network Z Z source load Figure7.SeriesEquivalentSourceandLoadImpedance—3550MHz MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 7

--VGG +VDD C8 C7 C12 C11 C9 C6 C13 C10 C5 C14 C4 C15 C3 C16 R1 C1 L1 L2 C19 C20 Q1 C2 R2 C17 C18 C21 MRFG35010ANRev.2 700MHz--900MHz Figure8.MRFG35010ANT1TestCircuitComponentLayout—750MHz Table8.MRFG35010ANT1TestCircuitComponentDesignationsandValues—750MHz Part Description PartNumber Manufacturer C1,C19 100pFChipCapacitors ATC600F101JT250XT ATC C2 10pFChipCapacitor ATC600F100JT250XT ATC C3,C16 10pFChipCapacitors ATC100A100JP150XT ATC C4,C15 100pFChipCapacitors ATC100A101JP150XT ATC C5,C14 100pFChipCapacitors ATC100B101JP500XT ATC C6,C13 1000pFChipCapacitors ATC100B102JP50XT ATC C7,C12 0.1FChipCapacitors CDR33BX104AKWS AVX C8,C11 39KpFChipCapacitors ATC200B393KP500XT ATC C9,C10 22F,35VTantalumCapacitors T491X226K035AT Kemet C17 1.8pFChipCapacitor ATC600F1R8BT250XT ATC C18 6.8pFChipCapacitor ATC600F6R8BT250XT ATC C20 22pFChipCapacitor ATC600F220JT250XT ATC C21 1pFChipCapacitor ATC600F1R0BT250XT ATC L1,L2 18nHChipInductors LL1608--FSL18NJ TOKO Q1 PowerFETGaAsTransistor MRFG35010ANT1 Freescale R1 51,1/10WChipResistor RM73B1JT510J KOASpeer R2 4.7,1/10WChipResistor CR10--4R7J--T Kyocera PCB 0.020,r=3.5 RO4350B Rogers MRFG35010ANT1 RFDeviceData 8 FreescaleSemiconductor,Inc.

VGG + + VDD C9 C8 C7 C6 C5 C14 C13 C12 C11 C10 C4 C15 C3 C16 Z8 R1 Z11 RF L1 L2 RF INPUT C20 OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z9 Z10 Z12 Z13 Z14 Z15 C1 C2 C21 C17 C18 C19 R2 Figure9.MRFG35010ANT1TestCircuitSchematic—750MHz Table9.MRFG35010ANT1TestCircuitMicrostrips—750MHz Microstrip Description Microstrip Description Z1 0.045x0.633Microstrip Z8 0.025x0.155Microstrip Z2 0.045x0.044Microstrip Z10 0.325x0.255Microstrip Z3 0.045x0.422Microstrip Z11 0.025x0.168Microstrip Z4 0.090x0.030Microstrip Z12 0.045x0.080Microstrip Z5 0.110x0.050Microstrip Z13 0.045x0.600Microstrip Z6 0.285x0.200Microstrip Z14 0.045x0.089Microstrip Z7,Z9 0.146x0.070Microstrip Z15 0.045x0.400Microstrip MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 9

TYPICALCHARACTERISTICS—750MHz 20 10 VDD=12Vdc,IDQ=130mA,25C VDD=12Vdc,IDQ=130mA,25C 15 B) 5 AIN(dB) 10 LOSS(d 0 G 5 N --5 L R A U GN 0 ET --10 SI R G,SMALL--p --1--50 S11,INPUT ----1250 --15 --25 --20 --30 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure10.Small--SignalGainversusFrequency Figure11.InputReturnLossversusFrequency 10 VDD=12Vdc,IDQ=130mA,25C B) 5 d ( S S 0 O L RN --5 U T RE --10 T U P --15 T U O 2, --20 2 S --25 --30 500 1000 1500 2000 2500 3000 3500 f,FREQUENCY(MHz) Figure12.OutputReturnLossversusFrequency MRFG35010ANT1 RFDeviceData 10 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS—750MHz 18 60 VDD=12Vdc,IDQ=130mA,f=750MHz Single--CarrierW--CDMA,3.84MHzChannelBandwidth 16 50 InputSignalPAR=8.5dB@0.01%Probability(CCDF) %) B) Y( RGAIN(d 1142 Gps 4300 FFICIENC E E W N G,POps10 D 20 ,DRAID 8 10 6 0 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure13.Single--CarrierW--CDMAPowerGain andDrainEfficiencyversusOutputPower c) --10 --5 B (d VDD=12Vdc,IDQ=130mA,f=750MHz O Single--CarrierW--CDMA,3.84MHzChannelBandwidth RATI --20 InputSignalPAR=8.5dB@0.01%Probability(CCDF) --10 dB) R S( E S W O O L P --30 --15 N L R E U NN IRL ET A R H --40 --20 T C U T P N N E ACPR I DJAC --50 --25 IRL, A R, P C --60 --30 A 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure14.Single--CarrierW--CDMAACPRand InputReturnLossversusOutputPower MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 11

--VGG +VDD C8 C7 C12 C11 C9 C10 C6 C13 C5 C14 C4 C15 C3 C16 R1 C1 L1 L2 C17 Q1 RFIN C2 RFOUT C18 MRFG35010AN Rev.0 2100MHz--2200MHz Figure15.MRFG35010ANT1TestCircuitComponentLayout—2140MHz Table10.MRFG35010ANT1TestCircuitComponentDesignationsandValues—2140MHz Part Description PartNumber Manufacturer C1 4.7pFChipCapacitor 080514R7BBS AVX C2 0.5pFChipCapacitor 08051J0R5BBS AVX C3,C16 10pFChipCapacitors ATC100A100JP150XT ATC C4,C15 100pFChipCapacitors ATC100A101JP150XT ATC C5,C14 100pFChipCapacitors ATC100B101JP500XT ATC C6,C13 1000pFChipCapacitors ATC100B102JP50XT ATC C7,C12 0.1FChipCapacitors CDR33BX104AKWS AVX C8,C11 39KpFChipCapacitors ATC200B393KP500XT ATC C9,C10 22F,35VTantalumCapacitors T491X226K035AT Kemet C17 15pFChipCapacitor 08051J150GBS AVX C18 1.5pFChipCapacitor 08051J1R5BBS AVX L1 3.9nHInductor LL1608--FH3N9S TOKO L2 8.2nHInductor LL1608--FH8N2S TOKO Q1 PowerFETGaAsTransistor MRFG35010ANT1 Freescale R1 75,1/8WChipResistor ERJ--6GEYJ750V Panasonic PCB 0.020,r=3.5 RO4350B Rogers MRFG35010ANT1 RFDeviceData 12 FreescaleSemiconductor,Inc.

VGG + + VDD C9 C8 C7 C6 C5 C14 C13 C12 C11 C10 C4 C15 C3 C16 R1 Z8 RF L1 L2 RF INPUT OUTPUT Z1 Z2 Z3 Z5 Z6 Z7 Z9 Z10 Z12 Z13 Z14 C1 C2 Z4 C18 Z11 C19 Figure16.MRFG35010ANT1TestCircuitSchematic—2140MHz Table11.MRFG35010ANT1TestCircuitMicrostrips—2140MHz Microstrip Description Microstrip Description Z1,Z14 0.045x0.295Microstrip Z7,Z9 0.146x0.070Microstrip Z2 0.045x0.224Microstrip Z8 0.045x0.098Microstrip Z3 0.045x0.515Microstrip Z10 0.200x0.040Microstrip Z4 0.105x0.045Microstrip Z11 0.260x0.020Microstrip Z5 0.045x0.023Microstrip Z12 0.200x0.632Microstrip Z6 0.450x0.312Microstrip Z13 0.045x0.420Microstrip MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 13

TYPICALCHARACTERISTICS—2140MHz 20 10 VDD=12Vdc,IDQ=130mA,25C VDD=12Vdc,IDQ=130mA,25C 15 B) 5 AIN(dB) 10 LOSS(d 0 G 5 N --5 L R A U GN 0 ET --10 SI R G,SMALL--p --1--50 S11,INPUT ----1250 --15 --25 --20 --30 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure17.Small--SignalGainversusFrequency Figure18.InputReturnLossversusFrequency 10 VDD=12Vdc,IDQ=130mA,25C B) 5 d ( S S 0 O L RN --5 U T RE --10 T U P --15 T U O 2, --20 2 S --25 --30 500 1000 1500 2000 2500 3000 3500 f,FREQUENCY(MHz) Figure19.OutputReturnLossversusFrequency MRFG35010ANT1 RFDeviceData 14 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS—2140MHZ 18 60 VDD=12Vdc,IDQ=130mA,f=2140MHz Single--CarrierW--CDMA,3.84MHz 16 50 ChannelBandwidth %) B) InputSignalPAR=8.5dB@0.01% Y( RGAIN(d 1142 Probability(CCDF) Gps 4300 FFICIENC E E W N G,POps10 D 20 ,DRAID 8 10 6 0 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure20.Single--CarrierW--CDMAPowerGain andDrainEfficiencyversusOutputPower c) --10 ----5 B (d VDD=12Vdc,IDQ=140mA,f=2140MHz O Single--CarrierW--CDMA,3.84MHzChannelBandwidth RATI --20 InputSignalPAR=8.5dB@0.01%Probability(CCDF) --10 dB) R S( E S W O O L P --30 --15 N EL IRL UR N T N E A R H --40 --20 T C U T P EN ACPR IN DJAC --50 --25 IRL, A R, P C --60 --30 A 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure21.Single--CarrierW--CDMAACPRand InputReturnLossversusOutputPower MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 15

--VGG +VDD C8 C7 C12 C11 C9 C10 C6 C13 C5 C14 C4 C15 C3 C16 R1 C1 C18 L1 L2 C17 C21 Q1 RFIN C2* C19 C20 RFOUT MRFG35010AN Rev.0 2600MHz--2700MHz Note:ComponentnumberC2*islabeledonboardbutnotplaced. Figure22.MRFG35010ANT1TestCircuitComponentLayout—2650MHz Table12.MRFG35010ANT1TestCircuitComponentDesignationsandValues—2650MHz Part Description PartNumber Manufacturer C1 4.7pFChipCapacitor 080514R7BBS AVX C2 ComponentNotPlaced C3,C16 10pFChipCapacitors ATC100A100JP150XT ATC C4,C15 100pFChipCapacitors ATC100A101JP150XT ATC C5,C14 100pFChipCapacitors ATC100B101JP500XT ATC C6,C13 1000pFChipCapacitors ATC100B102JP50XT ATC C7,C12 0.1FChipCapacitors CDR33BX104AKWS AVX C8,C11 39KpFChipCapacitors ATC200B393KP500XT ATC C9,C10 22F,35VTantalumCapacitors T491X226K035AT Kemet C17 15pFChipCapacitor 08051J150GBS AVX C18 0.5pFChipCapacitor 08051J0R5BBS AVX C19 1.5pFChipCapacitor 08051J1R5BBS AVX C20 1pFChipCapacitor 08051J1R0BBS AVX C21 0.4pFChipCapacitor 08051J0R4BBS AVX L1 5.6nHInductor LL1608--FH5N6S TOKO L2 6.8nHInductor LL1608--FH6N8S TOKO Q1 PowerFETGaAsTransistor MRFG35010ANT1 Freescale R1 75,1/8WChipResistor ERJ--6GEYJ750V Panasonic PCB 0.020,r=3.5 RO4350B Rogers MRFG35010ANT1 RFDeviceData 16 FreescaleSemiconductor,Inc.

VGG + + VDD C9 C8 C7 C6 C5 C14 C13 C12 C11 C10 C4 C15 C3 C16 R1 Z9 RF L1 L2 RF INPUT OUTPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 Z17 C1 C18 C19 Z5 Z12 C20 C17 C21 Figure23.MRFG35010ANT1TestCircuitSchematic—2650MHz Table13.MRFG35010ANT1TestCircuitMicrostrips—2650MHz Microstrip Description Microstrip Description Z1 0.045x0.295Microstrip Z9 0.045x0.098Microstrip Z2 0.045x0.385Microstrip Z11 0.200x0.040Microstrip Z3 0.045x0.077Microstrip Z12 0.260x0.020Microstrip Z4 0.045x0.273Microstrip Z13 0.200x0.632Microstrip Z5 0.105x0.045Microstrip Z14 0.045x0.348Microstrip Z6 0.045x0.023Microstrip Z15 0.045x0.075Microstrip Z7 0.450x0.312Microstrip Z16 0.045x0.150Microstrip Z8,Z10 0.146x0.070Microstrip Z17 0.045x0.152Microstrip MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 17

TYPICALCHARACTERISTICS—2650MHz 20 10 VDD=12Vdc,IDQ=130mA,25C VDD=12Vdc,IDQ=130mA,25C 15 B) 5 AIN(dB) 10 LOSS(d 0 G 5 N --5 L R A U GN 0 ET --10 SI R G,SMALL--p --1--50 S11,INPUT ----1250 --15 --25 --20 --30 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure24.Small--SignalGainversusFrequency Figure25.InputReturnLossversusFrequency 10 VDD=12Vdc,IDQ=130mA,25C B) 5 d ( S S 0 O L RN --5 U T RE --10 T U P --15 T U O 2, --20 2 S --25 --30 500 1000 1500 2000 2500 3000 3500 f,FREQUENCY(MHz) Figure26.OutputReturnLossversusFrequency MRFG35010ANT1 RFDeviceData 18 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS—2650MHZ 18 60 VDD=12Vdc,IDQ=130mA,f=2650MHz Single--CarrierW--CDMA 16 50 3.84MHzChannelBandwidth %) B) InputSignalPAR=8.5dB@0.01% Y( RGAIN(d 1142 Probability(CCDF) 4300 FFICIENC E E G,POWps10 Gps D 20 ,DRAIND 8 10 6 0 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure27.Single--CarrierW--CDMAPowerGain andDrainEfficiencyversusOutputPower c) --10 --5 B (d VDD=12Vdc,IDQ=140mA,f=2650MHz O Single--CarrierW--CDMA,3.84MHzChannelBandwidth RATI --20 InputSignalPAR=8.5dB@0.01%Probability(CCDF) --10 dB) R S( E S W O O L P --30 --15 N EL IRL UR N T N E A R H --40 --20 T C U T P N N E I DJAC --50 ACPR --25 IRL, A R, P C --60 --30 A 20 25 30 35 40 Pout,OUTPUTPOWER(dBm) Figure28.Single--CarrierW--CDMAACPRand InputReturnLossversusOutputPower MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 19

0.146 3.71 0.095 2.41 0.115 2.92 0.115 2.92 0.020 0.51 inches mm Figure29.PLD--1.5SolderFootprint M10A N B YYWW Figure30.ProductMarking MRFG35010ANT1 RFDeviceData 20 FreescaleSemiconductor,Inc.

PACKAGEDIMENSIONS MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 21

MRFG35010ANT1 RFDeviceData 22 FreescaleSemiconductor,Inc.

MRFG35010ANT1 RFDeviceData FreescaleSemiconductor,Inc. 23

PRODUCTDOCUMENTATION,SOFTWAREANDTOOLS Refertothefollowingdocuments,softwareandtoolstoaidyourdesignprocess. ApplicationNotes  AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers Software  .s2pFile  RFHighPowerModel DevelopmentTools  PrintedCircuitBoards ReferenceDesigns  W--CDMAReferenceDesignfor2.4--2.5GHz,900mWMRFG35010ANT1Device  725--760MHz,1.0WAVG.,12VLTEAmplifierLineupReferenceDesign ForSoftwareandTools,doaPartNumbersearchathttp://www.freescale.com,andselectthe“PartNumber”link.Gotothe Software&Toolstabonthepart’sProductSummarypagetodownloadtherespectivetool. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 May2006  InitialReleaseofDataSheet 1 Dec.2008  Removed”OperatingCaseTemperatureRange”fromMaximumRatingstablesothatthemaximum channeltemperatureratingisthelimitingthermaldesigncriteriaandnotthecasetemperaturerange,p.1  AddedTable3,ESDProtectionCharacteristics,p.1;renumberedsubsequenttables 2 June2009  ModifieddatasheettoreflectMSLratingchangefrom1to3asaresultofthestandardizationofpacking processasdescribedinProductandProcessChangeNotificationnumber,PCN13516,p.1 3 Dec.2012  AddedTypicalPerformancetable,p.1  Table3,ESDProtectionCharacteristics,removedtheword”Minimum”aftertheESDclassrating.ESD ratingsarecharacterizedduringnewproductdevelopmentbutarenot100%testedduringproduction.ESD ratingsprovidedinthedatasheetareintendedtobeusedasaguidelinewhenhandlingESDsensitive devices,p.1.  AddedFigs.8,15and22,TestCircuitComponentLayout—750MHz,2140MHzand2650MHz,and Tables8,10and12,TestCircuitComponentDesignationsandValues —750MHz,2140MHzand 2650MHz,p.8,12and16  AddedFigs.9,16and23,TestCircuitSchematic—750MHz,2140MHzand2650MHz,andTables9,11 and13,TestCircuitMicrostrips—750MHz,2140MHzand2650MHz,p.9,13and17  AddedFigs.10,17and24,Small--SignalGainversusFrequency—750MHz,2140MHzand2650MHz, Figs.11,18and25,InputReturnLossversusFrequency—750MHz,2140MHzand2650MHz,and Figs.12,19and26,OutputReturnLossversusFrequency—750MHz,2140MHzand2650MHz,p.10, 14and18  AddedFigs.13,20and27,Single--CarrierW--CDMAPowerGainandDrainEfficiencyversusOutput Power—750MHz,2140MHzand2650MHz,andFigs.14,21and28,Single--CarrierW--CDMAACPR andInputReturnLossversusOutputPower—750MHz,2140MHzand2650MHz,p.11,15and19 4 Aug.2013  ModifieddatasheettoreflecttapeandreelchangesforPLD--1.5packagedevicesasdescribedinProduct andProcessChangeNotificationnumber,PCN14498,p.1  UpdatedFig.1,MRFG35010ANT1TestCircuitComponentLayout—3550MHz,tocurrenttestcircuit componentlayoutforMRFG35010ANT1part,p.3 MRFG35010ANT1 RFDeviceData 24 FreescaleSemiconductor,Inc.

HowtoReachUs: Informationinthisdocumentisprovidedsolelytoenablesystemandsoftware implementerstouseFreescaleproducts.Therearenoexpressorimpliedcopyright HomePage: licensesgrantedhereundertodesignorfabricateanyintegratedcircuitsbasedonthe freescale.com informationinthisdocument. WebSupport: Freescalereservestherighttomakechangeswithoutfurthernoticetoanyproducts freescale.com/support herein.Freescalemakesnowarranty,representation,orguaranteeregardingthe suitabilityofitsproductsforanyparticularpurpose,nordoesFreescaleassumeany liabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecifically disclaimsanyandallliability,includingwithoutlimitationconsequentialorincidental damages.“Typical”parametersthatmaybeprovidedinFreescaledatasheetsand/or specificationscananddovaryindifferentapplications,andactualperformancemay varyovertime.Alloperatingparameters,including“typicals,”mustbevalidatedfor eachcustomerapplicationbycustomer’stechnicalexperts.Freescaledoesnotconvey anylicenseunderitspatentrightsnortherightsofothers.Freescalesellsproducts pursuanttostandardtermsandconditionsofsale,whichcanbefoundatthefollowing address:freescale.com/SalesTermsandConditions. FreescaleandtheFreescalelogoaretrademarksofFreescaleSemiconductor,Inc., Reg.U.S.Pat.&Tm.Off.Allotherproductorservicenamesarethepropertyoftheir respectiveowners. E2006,2008--2009,2012--2013FreescaleSemiconductor,Inc. MRFG35010ANT1 DRoFcuDmeenvticNeumDbaert:aMRFG35010AN RFerve.e4,s8c/a20le13Semiconductor,Inc. 25