Freescale Semiconductor DocumentNumber:MRFE6VP61K25H Technical Data Rev.4.1,3/2014 RF Power LDMOS Transistors MRFE6VP61K25HR6 High Ruggedness N--Channel MRFE6VP61K25HR5 Enhancement--Mode Lateral MOSFETs MRFE6VP61K25HSR5 ThesehighruggednessdevicesaredesignedforuseinhighVSWRindustrial (includinglaserandplasmaexciters),broadcast(analoganddigital),aerospace MRFE6VP61K25GSR5 andradio/landmobileapplications.Theyareunmatchedinputandoutput designsallowingwidefrequencyrangeutilization,between1.8and600MHz.  TypicalPerformance:VDD=50Volts,IDQ=100mA 1.8--600MHz,1250WCW,50V Pout f Gps D SignalType (W) (MHz) (dB) (%) WIDEBAND RFPOWERLDMOSTRANSISTORS Pulse 1250Peak 230 24.0 74.0 (100sec,20%DutyCycle) CW 1250CW 230 22.9 74.6 ApplicationCircuits(1)—TypicalPerformance Frequency Pout Gps D (MHz) SignalType (W) (dB) (%) NI--1230H--4S 27 CW 1300 27 81 MRFE6VP61K25HR6/R5 40 CW 1300 26 85 81.36 CW 1250 27 84 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 352 Pulse 1250 21.5 66 NI--1230S--4S (200sec, MRFE6VP61K25HSR5 20%DutyCycle) 352 CW 1150 20.5 68 500 CW 1000 18 58 1. ContactyourlocalFreescalesalesofficeforadditionalinformationonspecific circuitdesigns. LoadMismatch/Ruggedness NI--1230GS--4L MRFE6VP61K25GSR5 Frequency Pout Test (MHz) SignalType VSWR (W) Voltage Result 230 Pulse >65:1atall 1500Peak 50 NoDevice (100sec,20% PhaseAngles (3dB Degradation DutyCycle) Overdrive) GateA 3 1 DrainA Features  UnmatchedInputandOutputAllowingWideFrequencyRangeUtilization  DevicecanbeusedSingle--EndedorinaPush--PullConfiguration GateB 4 2 DrainB  QualifiedUptoaMaximumof50VDDOperation  Characterizedfrom30Vto50VforExtendedPowerRange  SuitableforLinearApplicationwithAppropriateBiasing (TopView)  IntegratedESDProtectionwithGreaterNegativeGate--SourceVoltageRange Note: The backside of the package is the forImprovedClassCOperation sourceterminalforthetransistors.  CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParameters Figure1.PinConnections  InTapeandReel.R6Suffix=150Units,56mmTapeWidth,13--inchReel. R5Suffix=50Units,56mmTapeWidth,13--inchReel. FreescaleSemiconductor,Inc.,2010--201M4.RAllFrEigh6tVsrPe6se1rvKe2d.5HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 1

Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage VDSS --0.5,+133 Vdc Gate--SourceVoltage VGS --6.0,+10 Vdc StorageTemperatureRange Tstg --65to+150 C CaseOperatingTemperature TC 150 C OperatingJunctionTemperature(1,2) TJ 225 C TotalDeviceDissipation@TC=25C PD 1333 W Derateabove25C 6.67 W/C Table2.ThermalCharacteristics Characteristic Symbol Value(2,3) Unit ThermalResistance,JunctiontoCase RJC 0.15 C/W CW:CaseTemperature63C,1250WCW,IDQ=100mA,230MHz ThermalImpedance,JunctiontoCase ZJC 0.03 C/W Pulse: CaseTemperature66C,1250WPulse,100secPulseWidth,20%DutyCycle, IDQ=100mA,230MHz Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 2,passes3500V MachineModel(perEIA/JESD22--A115) B,passes250V ChargeDeviceModel(perJESD22--C101) IV,passes4000V Table4.ElectricalCharacteristics (TA=25Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit OffCharacteristics(4) Gate--SourceLeakageCurrent IGSS — — 1 Adc (VGS=5Vdc,VDS=0Vdc) Drain--SourceBreakdownVoltage V(BR)DSS 133 — — Vdc (VGS=0Vdc,ID=100mA) ZeroGateVoltageDrainLeakageCurrent IDSS — — 10 Adc (VDS=50Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS — — 20 Adc (VDS=100Vdc,VGS=0Vdc) OnCharacteristics GateThresholdVoltage(4) VGS(th) 1.7 2.2 2.7 Vdc (VDS=10Vdc,ID=1776Adc) GateQuiescentVoltage VGS(Q) 1.9 2.2 2.9 Vdc (VDD=50Vdc,ID=100mAdc,MeasuredinFunctionalTest) Drain--SourceOn--Voltage(4) VDS(on) — 0.15 — Vdc (VGS=10Vdc,ID=2Adc) ForwardTransconductance gfs — 28.0 — S (VDS=10Vdc,ID=30Adc) DynamicCharacteristics(4) ReverseTransferCapacitance Crss — 2.8 — pF (VDS=50Vdc30mV(rms)ac@1MHz,VGS=0Vdc) OutputCapacitance Coss — 185 — pF (VDS=50Vdc30mV(rms)ac@1MHz,VGS=0Vdc) InputCapacitance Ciss — 562 — pF (VDS=50Vdc,VGS=0Vdc30mV(rms)ac@1MHz) 1. ContinuoususeatmaximumtemperaturewillaffectMTTF. 2. MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. 3. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. 4. Eachsideofdevicemeasuredseparately. (continued) MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 2 FreescaleSemiconductor,Inc.

Table4.ElectricalCharacteristics (TA=25Cunlessotherwisenoted)(continued) Characteristic Symbol Min Typ Max Unit FunctionalTests(1)(InFreescaleTestFixture,50ohmsystem)VDD=50Vdc,IDQ=100mA,Pout=1250WPeak(250WAvg.), f=230MHz,100secPulseWidth,20%DutyCycle PowerGain Gps 23.0 24.0 26.0 dB DrainEfficiency D 72.5 74.0 — % InputReturnLoss IRL — --14 --10 dB Table5.LoadMismatch/Ruggedness(InFreescaleTestFixture,50ohmsystem)IDQ=100mA Frequency Pout (MHz) SignalType VSWR (W) TestVoltage,VDD Result 230 Pulse >65:1atall 1500Peak 50 NoDeviceDegradation (100sec,20%DutyCycle) PhaseAngles (3dBOverdrive) 1. Measurementsmadewithdeviceinstraightleadconfigurationbeforeanyleadformingoperationisapplied.Leadformingisusedforgull wing(GS)parts. MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 3

-- -- C13 C22 C23 C24 C10 C11C12 C21 COAX1 COAX3 R1 L3 C16 C2 C4 L1 C17 C5 C14 C15 C18 C1 C3 L2 A C20 E C19 R A T U O T R2 U L4 C COAX2 COAX4 C25 C9 C6 C7 C8 MRFE6VP61K25H C26 --C27 --C28 Rev.3 Figure2.MRFE6VP61K25HR6(HSR6)230MHzProductionTestCircuitComponentLayout—Pulse Table6.MRFE6VP61K25HR6(HSR6)230MHzProductionTestCircuitComponentDesignationsandValues—Pulse Part Description PartNumber Manufacturer C1 20pFChipCapacitor ATC100B200JT500XT ATC C2,C3,C5 27pFChipCapacitors ATC100B270JT500XT ATC C4 0.8--8.0pFVariableCapacitor,Gigatrim 27291SL Johanson C6,C10 22F,35VTantalumCapacitors T491X226K035AT Kemet C7,C11 0.1FChipCapacitors CDR33BX104AKYS AVX C8,C12 220nFChipCapacitors C1812C224K5RACTU Kemet C9,C13,C21,C25 1000pFChipCapacitors ATC100B102JT50XT ATC C14 43pFChipCapacitor ATC100B430JT500XT ATC C15 75pFMetalMica MIN02--002EC750J--F CDE C16,C17,C18,C19 240pFChipCapacitors ATC100B241JT200XT ATC C20 6.2pFChipCapacitor ATC100B6R2BT500XT ATC C22,C23,C24,C26,C27,C28 470F,63VElectrolyticCapacitors MCGPR63V477M13X26--RH Multicomp Coax1,2,3,4 25SemiRigidCoax,2.2ShieldLength UT--141C--25 Micro--Coax L1,L2 5nHInductors A02TKLC Coilcraft L3,L4 6.6nHInductors GA3093--ALC Coilcraft R1,R2 10ChipResistors CRCW120610R0JNEA Vishay PCB 0.030,r=2.55 AD255A Arlon MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 4 FreescaleSemiconductor,Inc.

T U FP RT U O 0 Z3 20 C Z29 strip strip strip strip strip nds o o o o o e PPLY COAX3 COAX4 PPLY se scription 300Micr 300Micr 300Micr 082Micr 082Micr crostripb VSU VSU Pul De 0. 0. 0. 0. 0. smi +++ C22C23C24 C16Z27Z25 C17 C15 Z26Z28 C18 C19 +++ C26C27C28 uitSchematic— ps—Pulse Microstrip Z23,Z241.251 Z25,Z260.127 Z27,Z280.116 Z290.186 Z300.179 *Linelengthinclude C21 Z23 Z24 C25 Circ stri o L3 Z19 Z17 Z21 C14 Z22 Z18 Z20 L4 nTest tMicr ostrip ostrip ostrip ostrip ostrip ostrip Z15 DUT Z16 Productio TestCircui Description 0.058Micr 0.726Micr 0.507Micr 0.363Micr 0.154Micr 0.507Micr Hz n       R1 Z11 Z13 Z14 Z12 R2 30M uctio 0.872 0.412 0.371 0.466 0.187 0.104 2 d C12C13 L1Z9 C5 Z10 L2 C8C9 HR6(HSR6) 30MHzPro Microstrip Z11*,Z12* Z13,Z14 Z15,Z16 Z17*,Z18* Z19*,Z20* Z21,Z22 11 7 5 2 C10C Z7 C4 Z8 + C6C P61K2 HSR6) ostrip ostrip ostrip ostrip ostrip ostrip AS Z5 C2 Z6 C3 AS RFE6V 25HR6( cription 82Micr 82Micr 00Micr 85Micr 85Micr 85Micr VBI Z3 Z4 VBI 3.M 61K Des 0.0 0.0 0.1 0.2 0.2 0.2 COAX1 COAX2 Figure MRFE6VP p 0.192 0.175 0.170 0.116 0.116 0.108 ri Z2 C1 able7. Microst Z1 Z2 Z3,Z4 Z5,Z6 Z7,Z8 Z9,Z10 T 1 Z T FU RP N I MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 5

TYPICALCHARACTERISTICS 2000 66 1000 Ciss D 65 P3dB=61.9dBm(1553W) Ideal E S L P2dB=61.7dBm(1472W) U E(pF) 100 Coss Bm)P 64 PACITANC POWER(d 6632 P(113d3B3=W6)1.3dBm Actual A T C,C 10 TPU 61 U Measuredwith30mV(rms)ac@1MHz Crss P,Oout 60 VPDulDse=W50idVthdc=,1ID0Q0=s1e0c0,m20A%,fD=u2ty30CyMcHlez VGS=0Vdc 1 59 0 10 20 30 40 50 35 36 37 38 39 40 41 42 VDS,DRAIN--SOURCEVOLTAGE(VOLTS) Pin,INPUTPOWER(dBm)PEAK Note:Eachsideofdevicemeasuredseparately. Figure5.OutputPowerversusInputPower Figure4.CapacitanceversusDrain--SourceVoltage 26 90 26 IDQ=100mA,f=230MHz VDD=50Vdc,IDQ=100mA,f=230MHz 25 PulseWidth=100sec,20%DutyCycle 25 PulseWidth=100sec,20%DutyCycle 80 24 %) GAIN(dB) 24 70 CIENCY( GAIN(dB) 2223 50V G,POWERps 2223 Gps 5600 DRAINEFFID, G,POWERps 212109 35V 40V 45V  18 21 40 D 17 VDD=30V 20 30 16 100 1000 2000 0 200 400 600 800 1000 1200 1400 1600 Pout,OUTPUTPOWER(WATTS)PEAK Pout,OUTPUTPOWER(WATTS)PEAK Figure6.PowerGainandDrainEfficiency Figure7.PowerGainversusOutputPower versusOutputPower 90 26 90 --30_C 35V 40V 45V 50V 25_C 80 VDD=30V 25 80 DRAINEFFICIENCY(%)D, 76540000 G,POWERGAIN(dB)ps 22221432 G2ps5_C TC85=_--C30_C 85_C 46570000 ,DRAINEFFICIENCY(%)D 30 IDQ=100mA,f=230MHz 20 VDD=50Vdc,IDQ=100mA,f=230MHz 30 PulseWidth=100sec,20%DutyCycle D PulseWidth=100sec,20%DutyCycle 20 19 20 0 200 400 600 800 1000 1200 1400 1600 100 1000 22000000 Pout,OUTPUTPOWER(WATTS)PEAK Pout,OUTPUTPOWER(WATTS)PEAK Figure8.DrainEfficiencyversusOutputPower Figure9.PowerGainandDrainEfficiencyversus OutputPower MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 6 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS 109 108 RS) 107 U O H ( TF 106 T M 105 104 90 110 130 150 170 190 210 230 250 TJ,JUNCTIONTEMPERATURE(C) ThisabovegraphdisplayscalculatedMTTFinhourswhenthedevice isoperatedatVDD=50Vdc,Pout=1250WCW,andD=74.6%. MTTFcalculatoravailableathttp://www.freescale.com/rf.Select Software&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. Figure10.MTTFversusJunctionTemperature—CW VDD=50Vdc,IDQ=100mA,Pout=1250WPeak f Zsource Zload MHz   230 1.29+j3.54 2.12+j2.68 Zsource = Testcircuitimpedanceasmeasuredfrom gatetogate,balancedconfiguration. Zload = Testcircuitimpedanceasmeasuredfrom draintodrain,balancedconfiguration. Input Device Output Matching + Under -- Matching Network Test Network 50 50 -- + Zsource Zload Figure11.SeriesEquivalentTestCircuitSourceandLoadImpedance—230MHzPulse MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 7

VDD=50Vdc,IDQ=100mA f Zsource Zload (MHz) () () 1.8(1) 34.4+j192.0(1) 5.00-j4.00(1) 27 12.5+j7.00 7.00+j0.70 40 5.75+j5.06 5.39+j2.62 81.36 4.04+j5.93 4.89+j2.95 88 2.20+j6.70 4.90+j2.90 98 2.30+j6.90 4.10+j2.50 108 2.30+j7.00 4.40+j3.60 144 1.60+j5.00 3.90+j1.50 175 1.33+j3.90 3.50+j2.50 230 1.29+j3.54 2.12+j2.68 352 0.98+j1.45 1.82+j2.05 500 0.29+j1.47 1.79+j1.80 1. Simulateddata. Zsource = Testcircuitimpedanceasmeasuredfrom gatetogate,balancedconfiguration. Zload = Testcircuitimpedanceasmeasuredfrom draintodrain,balancedconfiguration. Input Device Output Matching + Under -- Matching Network Test Network 50 50 -- + Zsource Zload Figure12.SourceandLoadImpedancesOptimizedforIRL,PowerandEfficiency—Push--Pull MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 8 FreescaleSemiconductor,Inc.

87.5--108MHzFMBROADCASTREFERENCECIRCUIT COAX1 C15 C16 C1 C19 C18 C17 + + B1 COAX3 C3 L4 R1 L2 C7 C8 C4 C9 T1 L1 C10 C11 C5 C2 L3 L5 C12 + + C24 Q1 C21 C20 MRFE6VP61K25HRev.1 C22 C23 Note: ComponentnumbersC6,C13and C14arenotused. COAX2 Figure13.MRFE6VP61K25HR6(HSR6)87.5--108MHzFMBroadcastReferenceCircuitComponentLayout Table8.MRFE6VP61K25HR6(HSR6)87.5--108MHzFMBroadcastReferenceCircuitComponentDesignations andValues Part Description PartNumber Manufacturer B1 LongFerriteBead 2743021447 Fair--Rite C1 6.8F,50VChipCapacitor C4532X7R1H685K TDK C2 27pFChipCapacitor ATC100B270JT500XT ATC C3,C7,C8,C9,C10, 1000pFChipCapacitors ATC100B102JT50XT ATC C11,C12 C4 39pFMicaCapacitor MIN02--002DC390J--F CornellDubilier C5 3pFChipCapacitor ATC100B3R0CT500XT ATC C15,C22 10KpFChipCapacitors ATC200B103KT50XT ATC C16,C23 1F,100VChipCapacitors C3225JB2A105KT TDK C17,C24 10F,100VChipCapacitors C5750X7S2A106MT TDK C18,C19,C20,C21 470F,63VElectrolyticCapacitors MCGPR63V477M13X26--RH Multicomp L1 39nHInductor 1812SMS--39NJLC Coilcraft L2,L3 2.5nHInductors A01TKLC Coilcraft L4,L5 7Turn,#16AWG,ID=0.3Inductors CopperWire Q1 RFPowerLDMOSTransistor MRFE6VP61K25HR6 Freescale R1 11,1/4WChipResistor CRCW120611R0FKEA Vishay T1 Balun TUI--9 CommConcepts Coax1,Coax2 FlexCables(12)5.9 TC--12 CommConcepts Coax3 CoaxCable,Quickform50,8.7 SUCOFORM250--01 Huber+Suhner PCB 0.030,r=3.5 TC--350 Arlon Heatsink NI--1230CopperHeatsink C193X280T970 MachineShop MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 9

T U FP RT U O 5 C 3 X A O c C ati D D m VD VD he c S uit + C18 + C20 rc 0 1 2 Ci 7 8 9 1 1 1 9 C C C C C C 1 e + C1 + C2 nc e r e 7 4 ef C1 C2 R st 6 3 a C1 C2 c d a 5 1 2 2 o C1 AX AX C2 Br O O C C M F z H M 4 8 C 0 2 3 1 B B -- 5 7. 8 6) R S H 6( R H 5 2 K 1 L2 L3 P6 V 6 E F R M 4. 1 e r u g T1 Fi 3 2 C C 1 R B1 L1 1 C T FU VGS RINP MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 10 FreescaleSemiconductor,Inc.

TYPICALCHARACTERISTICS—87.5--108MHzFMBROADCASTREFERENCECIRCUIT 30 90 108MHz 98MHz 29 80 (dB) 28 87.5MHz 70 CY(%) GAIN 27 Gps 60 CIEN WER 26 50 EFFI PO AIN G,ps 25 108MHz D 40 DRD, 98MHz  24 30 87.5MHz VDD=50Vdc,IDQ=200mA 23 20 40 100 1000 2000 Pout,OUTPUTPOWER(WATTS) Figure15.PowerGainandDrainEfficiency versusOutputPower VDD=50Vdc,IDQ=200mA,Pout=1100WCW f Zsource Zload MHz   87.5 2.20+j6.70 4.90+j2.90 98 2.30+j6.90 4.10+j2.50 108 2.30+j7.00 4.40+j3.60 Zsource = Testcircuitimpedanceasmeasuredfrom gatetogate,balancedconfiguration. Zload = Testcircuitimpedanceasmeasuredfrom draintodrain,balancedconfiguration. Input Device Output Matching + Under -- Matching Network Test Network 50 50 -- + Zsource Zload Figure16.SeriesEquivalent87.5--108MHzFMBroadcastReferenceCircuitSourceandLoadImpedance MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 11

144--148MHzREFERENCECIRCUIT COAX1 C15 C16 C17 C1 C18 + COAX3 B1 C3 L2 R1 C7 C20 C8 C19 C9 T1 C4 C10 C11 L1 C5 C12 C6 C14 C13 MRFE6VP61K25HRev.2 *C7,C8,C9,C10,C11,andC12aremountedvertically. Note: ComponentnumberC2isnotused. COAX2 Figure17.MRFE6VP61K25HR6(HSR6)144--148MHzReferenceCircuitComponentLayout Table9.MRFE6VP61K25HR6(HSR6)144--148MHzReferenceCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer B1 95,100MHzLongFerriteBead 2743021447 Fair--Rite C1 6.8F,50VChipCapacitor C4532X7R1H685K TDK C3,C5,C7,C8,C9,C10, 1000pFChipCapacitors ATC100B102KT50XT ATC C11,C12,C13,C15 C4 5.6pFChipCapacitor ATC100B5R6CT500XT ATC C6 470pFChipCapacitor ATC100B471JT200XT ATC C14,C16 1F,100VChipCapacitors C3225JB2A105KT TDK C17 2.2F,100VChipCapacitor HMK432B7225KM--T TaiyoYuden C18 470F,100VElectrolyticCapacitor MCGPR100V477M16X32--RH Multicomp C19,C20 15pFChipCapacitors ATC100B150JT500XT ATC L1 43nHInductor B10TJLC Coilcraft L2 7Turn,#14AWG,ID=0.4Inductor Handwound Freescale R1 11,1/4WChipResistor CRCW120611R0FKEA Vishay T1 Balun TUI--9 CommConcepts Coax1,Coax2 FlexCables,10.2,4.7 TC--12 CommConcepts Coax3 CoaxCable,50,6.7 SUCOFORM250--01 Huber+Suhner PCB 0.030”,r=3.50 TC--350 Arlon MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 12 FreescaleSemiconductor,Inc.

T U FP RT U O 4 D C D V 8 3 + C1 X A O C 17 C 6 1 C 5 1 C 4 1 C7 C8 C9 C10 C11 C12 C c C20 C13 emati 9 h 1 c C S t ui c L2 Cir e C5 C6 c n e r e ef R 1 2 z X X H A A O O M C C 8 4 1 -- 4 4 1 6) R S H 6( R H 5 2 K 1 6 P V 6 E F R M 8. 1 e r u g T1 Fi C3 C2 1 R B1 L1 1 C T FU RP N I S G V MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 13

TYPICALCHARACTERISTICS—144--148MHzREFERENCECIRCUIT VDD=50Vdc,IDQ=200mA,Pout=1100WCW f Zsource Zload MHz   144 1.6+j5.0 3.9+j1.5 Zsource = Testcircuitimpedanceasmeasuredfrom gatetogate,balancedconfiguration. Zload = Testcircuitimpedanceasmeasuredfrom draintodrain,balancedconfiguration. Input Device Output Matching + Under -- Matching Network Test Network 50 50 -- + Zsource Zload Figure19.SeriesEquivalent144--148MHzReferenceCircuitSourceandLoadImpedance 31 90 VDD=50Vdc,IDQ=2500mA,f=144MHz 30 80 %) (dB) 29 Gps 70 CY( N N GAI 28 60 CIE WER 27 50 EFFI PO AIN G,ps 26 D 40 DRD, 25 30 24 20 50 100 1000 2000 Pout,OUTPUTPOWER(WATTS) Figure20.PowerGainandDrainEfficiency versusOutputPower 0 c) dB --20 VDD=50Vdc ( f1=143.9MHz,f2=144.1MHz N O --20 Two--ToneMeasurement TI R --30 O DIST --40 IDQ=2500mA N TIO --50 3rdOrder 4500mA A L --60 U D O --70 3rdOrder M 7thOrder R E --80 T N 4500mA I --90 MD, 7thOrder 5thOrder I--100 1 10 100 1000 2000 Pout,OUTPUTPOWER(WATTS)PEP Figure21.IntermodulationDistortionProducts versusOutputPower MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 14 FreescaleSemiconductor,Inc.

HARMONICMEASUREMENTS Marker 1 [T1] RBW 3 MHz RFAtt 10 dB RefLvl 1.018 kW VBW 3 MHz 1.5 E 04 W 144.00000000 MHz SWT 5 ms Unit W 77.7 dB Offset B1[T1] 1.018kW A 1 144.00000000MHz 1[T1] --42.07dB 144.00501002MHz 2[T1] --32.87dB 288.00501002MHz 3[T1] --37.26dB 1VIEW 432.00501002MHz 1SA 144MHz,1kW 4[T1] --38.89dB H2 H3 H4 H5 2 576.00501002MHz 3 EXT --42dB --33dB --37dB --39dB 4 1 Center 525 MHz 95 MHz/ Span 950 MHz Figure22.144MHzHarmonics@1kW MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 15

PACKAGEDIMENSIONS MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 16 FreescaleSemiconductor,Inc.

MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 17

MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 18 FreescaleSemiconductor,Inc.

MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 19

MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 20 FreescaleSemiconductor,Inc.

MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData FreescaleSemiconductor,Inc. 21

PRODUCTDOCUMENTATIONANDSOFTWARE Refertothefollowingdocumentsandsoftwaretoaidyourdesignprocess. ApplicationNotes  AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers EngineeringBulletins  EB212:UsingDataSheetImpedancesforRFLDMOSDevices Software  ElectromigrationMTTFCalculator  RFHighPowerModel  .s2pFile ForSoftware,doaPartNumbersearchathttp://www.freescale.com,andselectthe“PartNumber”link.Gotothe Software&Toolstabonthepart’sProductSummarypagetodownloadtherespectivetool. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 Nov.2010  InitialReleaseofDataSheet 1 Jan.2011  Fig.1,PinConnections,correctedpin4labelfromRFout/VGStoRFin/VGS,p.1 2 May2012  AddedApplicationCircuitsTypicalPerformancetable,p.1  CapableofHandlingVSWRbullet:corrected1250PeakOutputPowervalueto1500andconvertedtotable, pp.1,3  Table1,MaxRatings:finalDCtestspecificationforDrain--SourceVoltagechangedfrom+125to+133Vdc, p.2  Table3,ESDProtectionCharacteristics:addedthedevice’sESDpassinglevelasapplicabletoeachESD class,p.2  Table4,OffCharacteristics:finalDCtestspecificationforDrain--SourceBreakdownVoltageminimumvalue changedfrom125to133Vdc,p.2  Table4,OnCharacteristics:addedForwardTransconductance,p.2  Fig.10,MTTFversusJunctionTemperature--CW:MTTFendtemperatureongraphchangedtomatch maximumoperatingjunctiontemperature,p.7  AddedFig.12,SourceandLoadImpedancesOptimizedforIRL,PowerandEfficiency—Push--pull,p.8  AddedFig.13,87.5--108MHzFMBroadcastReferenceCircuitComponentLayout,p.9  AddedTable9,87.5--108MHzFMBroadcastReferenceCircuitComponentDesignationsandValues,p.9  AddedFig.14,87.5--108MHzFMBroadbandReferenceCircuitSchematic,p.10  AddedFig.15,PowerGainandDrainEfficiencyversusOutputPower(87.5--108MHz),p.11  AddedFig.16,SeriesEquivalent87.5--108MHzFMBroadcastReferenceCircuitSourceandLoad Impedance,p.11  AddedFig.17,144--148MHzReferenceCircuitComponentLayout,p.12  AddedTable9,144--148MHzReferenceCircuitComponentDesignationsandValues,p.12  AddedFig.18,144--148MHzReferenceCircuitSchematic,p.13  AddedFig.19,SeriesEquivalent144--148MHzReferenceCircuitSourceandLoadImpedance,p.14  AddedFig.20,PowerGainandDrainEfficiencyversusOutputPower(144--148MHz),p.14  AddedFig.21,IntermodulationDistortionProductsversusOutputPower(144--148MHz),p.14  AddedFig.22,144MHzHarmonics@1kW,p.15 3 Oct.2012  AddedpartnumberMRFE6VP61K25GSR5,p.1  Added2282--02(NI--1230S--4Gull)packageisometric,p.1,andMechanicalOutline,p.20,21 4 Mar.2013  MRFE6VP61K25HR6tapeandreeloptionreplacedwithMRF6VP61K25HR5perPCN15551.  ReplacedCaseOutline98ASB16977C,IssueEwithIssueF,p.16,17.ChangeddimensionCfrom 0.150--0.200toCC0.170--0.190.  ReplacedCaseOutline98ARB18247C,IssueFwithIssueG,p.18,19.ChangeddimensionCfrom 0.150--0.200toCC0.170--0.190.AddedminimumZdimensionR0.00.  ReplacedCaseOutline98ASA00459D,IssueOwithIssueA,p.20,21.ChangeddimensionCfrom 0.150--0.200toCC0.170--0.190.CorrectedpositionaltolerancefordimensionS. 4.1 Mar.2014  MRFE6VP61K25HR5partaddedtodatasheetdevicebox,p.1  MRFE6VP61K25HSR6tapeandreeloptionreplacedwithMRFE6VP61K25HSR5perPCN15551.(Note:this copyupdatesthecopyfromRev.4RevisionHistorytoaccuratelyreflectthepartnumberreplacementinthis datasheetasdescribedinPCN15551.) MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 RFDeviceData 22 FreescaleSemiconductor,Inc.

HowtoReachUs: Informationinthisdocumentisprovidedsolelytoenablesystemandsoftware implementerstouseFreescaleproducts.Therearenoexpressorimpliedcopyright HomePage: licensesgrantedhereundertodesignorfabricateanyintegratedcircuitsbasedonthe freescale.com informationinthisdocument. WebSupport: Freescalereservestherighttomakechangeswithoutfurthernoticetoanyproducts freescale.com/support herein.Freescalemakesnowarranty,representation,orguaranteeregardingthe suitabilityofitsproductsforanyparticularpurpose,nordoesFreescaleassumeany liabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecifically disclaimsanyandallliability,includingwithoutlimitationconsequentialorincidental damages.“Typical”parametersthatmaybeprovidedinFreescaledatasheetsand/or specificationscananddovaryindifferentapplications,andactualperformancemay varyovertime.Alloperatingparameters,including“typicals,”mustbevalidatedfor eachcustomerapplicationbycustomer’stechnicalexperts.Freescaledoesnotconvey anylicenseunderitspatentrightsnortherightsofothers.Freescalesellsproducts pursuanttostandardtermsandconditionsofsale,whichcanbefoundatthefollowing address:freescale.com/SalesTermsandConditions. FreescaleandtheFreescalelogoaretrademarksofFreescaleSemiconductor,Inc., Reg.U.S.Pat.&Tm.Off.Allotherproductorservicenamesarethepropertyoftheir respectiveowners. E2014FreescaleSemiconductor,Inc. MRFE6VP61K25HR6MRFE6VP61K25HR5MRFE6VP61K25HSR5MRFE6VP61K25GSR5 DRoFcuDmeenvticNeumDbaert:aMRFE6VP61K25H RFerve.e4.s1c,a3/l2e01S4emiconductor,Inc. 23

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: N XP: MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 MRFE6VP61K25-VHF